CN106558483B - 制造二氧化硅层的方法、二氧化硅层以及电子装置 - Google Patents
制造二氧化硅层的方法、二氧化硅层以及电子装置 Download PDFInfo
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- CN106558483B CN106558483B CN201610329591.6A CN201610329591A CN106558483B CN 106558483 B CN106558483 B CN 106558483B CN 201610329591 A CN201610329591 A CN 201610329591A CN 106558483 B CN106558483 B CN 106558483B
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- silicon dioxide
- dioxide layer
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- forming
- layer
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 72
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 49
- 239000000126 substance Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000009736 wetting Methods 0.000 claims abstract description 26
- 150000001722 carbon compounds Chemical class 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 16
- FYGHSUNMUKGBRK-UHFFFAOYSA-N trimethylbenzene Natural products CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 claims description 17
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 13
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N ortho-diethylbenzene Natural products CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 claims description 9
- 229920001709 polysilazane Polymers 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 239000008096 xylene Substances 0.000 claims description 7
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 6
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 6
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 claims description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims description 6
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 6
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims description 6
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 claims description 6
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000011344 liquid material Substances 0.000 claims description 4
- VIDOPANCAUPXNH-UHFFFAOYSA-N 1,2,3-triethylbenzene Chemical compound CCC1=CC=CC(CC)=C1CC VIDOPANCAUPXNH-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001555 benzenes Chemical group 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000005195 diethylbenzenes Chemical class 0.000 claims description 3
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 3
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- 229930004008 p-menthane Natural products 0.000 claims description 3
- 150000005199 trimethylbenzenes Chemical class 0.000 claims description 3
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 77
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- -1 polysiloxane Polymers 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- 229910003828 SiH3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- OGFYGJDCQZJOFN-UHFFFAOYSA-N [O].[Si].[Si] Chemical compound [O].[Si].[Si] OGFYGJDCQZJOFN-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003738 xylenes Chemical class 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- STOLYTNTPGXYRW-UHFFFAOYSA-N [nitro(phenyl)methyl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC([N+]([O-])=O)C1=CC=CC=C1 STOLYTNTPGXYRW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
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- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 125000005638 hydrazono group Chemical group 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229940044652 phenolsulfonate Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- 239000007790 solid phase Substances 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
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- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
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- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明提供一种制造二氧化硅层的方法、二氧化硅层以及电子装置。制造二氧化硅层的方法包含将包含碳化合物的预润湿液体物质涂布于衬底上、将用于形成二氧化硅层的组合物涂布于涂布有预润湿液体物质的衬底上以及使涂布有用于形成二氧化硅层的组合物的衬底固化。根据本发明的方法,可以使得用于形成二氧化硅层的组合物充分润湿衬底,并且可以有效涂布少量组合物,形成均匀的二氧化硅层。
Description
相关申请的交叉参考
本申请要求2015年9月25日在韩国知识产权局提交的韩国专利申请第10-2015-0137077号的优先权和权益,所述专利申请的全部内容以引用的方式并入本文中。
技术领域
本发明涉及一种制造二氧化硅层的方法、由其制造的二氧化硅层以及包含所述二氧化硅层的电子装置。
背景技术
平板显示器使用包含栅极电极、源极电极、漏极电极以及半导体的薄膜晶体管(thin film transistor,TFT)作为切换装置,并且配备有传递用于控制薄膜晶体管的扫描信号的栅极线和传递施加到像素电极的信号的数据线。另外,在半导体与若干电极之间形成绝缘层以将其隔开。绝缘层可以为包含硅组分的二氧化硅层。二氧化硅层可以由将用于形成二氧化硅层的组合物涂布于衬底上而形成,并且在本文中,当呈液相的形成二氧化硅层的组合物并未充分润湿呈固相的衬底时,二氧化硅层的均匀性可能劣化,并且另外,因为大量使用组合物,所以涂布过程的效率可能劣化。
发明内容
一个实施例提供一种通过使用少量用于形成二氧化硅层的组合物制造具有均匀性的二氧化硅层的方法。
另一实施例提供一种根据所述方法制造的二氧化硅层。
又一实施例提供一种包含二氧化硅层的电子装置。
根据一个实施例,制造二氧化硅层的方法包含将包含碳化合物的预润湿液体物质涂布于衬底上,将用于形成二氧化硅层的组合物涂布于涂布有预润湿液体物质的衬底上以及使涂布有用于形成二氧化硅层的组合物的衬底固化。
碳化合物可以在结构中包含经取代或未经取代的苯环,并且碳化合物的总碳数为6到14。
碳化合物可以具有98℃到200℃范围内的沸点。
碳化合物可以包含经取代或未经取代的三甲苯、经取代或未经取代的二甲苯、经取代或未经取代的二乙苯或其组合。
用于形成二氧化硅层的组合物可以包含含硅聚合物和溶剂。
含硅聚合物可以包含聚硅氮烷、聚硅氧烷或其组合。
溶剂可以包含由以下各项中选出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、环己烷、环己烯、十氢萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基环己烷、甲基环己烷、对薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基异丁酮以及其组合。
用于形成二氧化硅层的组合物的涂布可以使用旋涂法进行。
固化可以在大于150℃或等于150℃下在包含惰性气体的氛围下进行。
根据另一实施例,提供一种由制造二氧化硅层的方法形成的二氧化硅层。
根据又一实施例,提供一种包含二氧化硅层的电子装置。
在涂布用于形成二氧化硅层的组合物之前,可以进行衬底的预定的预处理,以使得用于形成二氧化硅层的组合物可以充分润湿衬底,并且可以有效涂布少量组合物,形成均匀的二氧化硅层。
附图说明
图1为说明评估二氧化硅层的厚度均匀性的方法的参考视图。
具体实施方式
下文将详细描述本发明的示范性实施例,并且其可以通过具有相关技术常识的人员容易地执行。然而,本发明可以按多种不同形式实施,并且不理解为限于本文中所阐述的示范性实施例。
在图中,为清楚起见放大层、膜、面板、区域等的厚度。在整篇说明书中,相同的元件符号表示相同的元件。应理解,当如层、膜、区域或衬底的元件被称作在另一个元件“上”时,其可以直接在另一个元件上或还可以存在插入元件。相比之下,当元件被称作“直接在”另一个元件“上”时,不存在插入元件。
如本文所用,当未另外提供定义时,术语‘经取代’是指经由以下各项中选出的取代基取代:卤素原子(F、Br、Cl或I)、羟基、烷氧基、硝基、氰基、氨基、叠氮基、脒基、肼基、亚肼基、羰基、氨甲酰基、硫醇基、酯基、羧基或其盐、磺酸基或其盐、磷酸或其盐、烷基、C2到C16烯基、C2到C16炔基、芳基、C7到C13芳基烷基、C1到C4氧基烷基、C1到C20杂烷基、C3到C20杂芳基烷基、环烷基、C3到C15环烯基、C6到C15环炔基、杂环烷基以及其组合,代替化合物的氢。
如本文所用,当未另外提供定义时,术语‘杂’是指包含1到3个由以下各项中选出的杂原子:N、O、S以及P。
另外,在说明书中,“*”是指与相同或不同的原子或化学式的连接点。
在下文中,描述一种根据一个实施例的制造二氧化硅层的方法。
根据一个实施例的制造二氧化硅层的方法包含将包含碳化合物的预润湿液体物质涂布于衬底上,将用于形成二氧化硅层的组合物涂布于涂布有预润湿液体物质的衬底上以及使涂布有用于形成二氧化硅层的组合物的衬底固化。
预润湿表示在润湿之前进行的预处理方法,并且被称为减少抗蚀剂消耗(Reducedresist consumption,RRC)。
根据一个实施例的制造二氧化硅层的方法包含将包含碳化合物的预润湿液体物质涂布于衬底上,之后涂布用于形成二氧化硅层的组合物。因此,预润湿液体物质的涂布可以改善用于形成二氧化硅层的组合物的涂布特征,也就是说,衬底(固体)与用于形成二氧化硅层的组合物(液体)之间的润湿特征。
碳化合物可以在结构中包含经取代或未经取代的苯环,并且碳化合物的总碳数为6到14。当使用包含碳化合物的预润湿液体物质时,不但可以在以下涂布用于形成二氧化硅层的组合物的方法中形成更均匀的薄膜,而且还可以减少薄膜表面上的孔缺陷的数量。
举例来说,碳化合物可以具有98℃到200℃,例如(但不限于)100℃到180℃的沸点。
举例来说,碳化合物可以为由以下各项中选出的一或多者:经取代或未经取代的三甲苯、经取代或未经取代的二甲苯以及经取代或未经取代的二乙苯,但并不限于此。
预润湿液体物质可以为碳化合物本身、两种以上碳化合物的混合物或包含除碳化合物外的其它组分的溶液。
预润湿液体物质可以例如(但不特定限于)按旋涂布、狭缝涂布、喷墨印刷等方法涂布。
当预润湿液体物质涂布完时,可以将用于形成二氧化硅层的组合物涂布于衬底上。
用于二氧化硅层的组合物可以包含含硅聚合物和溶剂。
用于形成二氧化硅层的组合物的含硅聚合物可以包含由化学式1表示的部分。
[化学式1]
在化学式1中,R1到R3独立地为氢、经取代或未经取代的C1到C30烷基、经取代或未经取代的C3到C30环烷基、经取代或未经取代的C6到C30芳基、经取代或未经取代的C7到C30芳基烷基、经取代或未经取代的C1到C30杂烷基、经取代或未经取代的C2到C30杂环烷基、经取代或未经取代的C2到C30烯基、经取代或未经取代的烷氧基、羧基、醛基、羟基或其组合,并且
“*”指示连接点。
举例来说,含硅聚合物可以为通过使卤代硅烷与氨水反应制备的聚硅氮烷。
举例来说,除化学式1的部分以外,用于形成二氧化硅层的组合物的含硅聚合物可以更包含由化学式2表示的部分。
[化学式2]
在化学式2中,R4到R7独立地为氢、经取代或未经取代的C1到C30烷基、经取代或未经取代的C3到C30环烷基、经取代或未经取代的C6到C30芳基、经取代或未经取代的C7到C30芳基烷基、经取代或未经取代的C1到C30杂烷基、经取代或未经取代的C2到C30杂环烷基、经取代或未经取代的C2到C30烯基、经取代或未经取代的烷氧基、羧基、醛基、羟基或其组合,
“*”指示连接点。
在本文中,除结构中的硅-氮(Si-N)键部分以外,含硅聚合物包含硅-氧-硅(Si-O-Si)键部分,并且所述硅-氧-硅(Si-O-Si)键部分在经由热处理固化期间可以减缓应力并且由此减小收缩。
举例来说,含硅聚合物包含由化学式1表示的部分、由化学式2表示的部分,并且可以更包含由化学式3表示的部分。
[化学式3]
*-SiH3
由化学式3表示的部分为末端以氢封端的结构,并且可以聚硅氮烷或聚硅氧烷结构的Si-H键的总量计15重量%到35重量%的量包含在内。当化学式3的部分在所述范围内包含在聚硅氮烷或聚硅氧烷结构中时,会防止SiH3部分分散至SiH4,同时在热处理期间充分发生氧化反应,并且可以防止填料图案中出现裂纹。
以用于形成二氧化硅层的组合物的总量计,所述含硅聚合物可以0.1重量%到50重量%、例如0.1重量%到30重量%的量包含在内。当其在所述范围内包含时,其可以维持适当粘度并且产生平坦、均一并且不具有间隙(空隙)的层。
用于形成二氧化硅层的组合物的溶剂可以为(但不限于)可溶解含硅聚合物的任何溶剂,并且具体来说可以包含由以下各项中选出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、环己烷、环己烯、十氢萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基环己烷、甲基环己烷、对薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基异丁基酮以及其组合。
用于形成二氧化硅层的组合物可以更包含热酸产生剂(thermal acidgenerator,TAG)。
热酸产生剂可以为改善用于形成二氧化硅类层的组合物的显影特性的添加剂,并且由此使得所述组合物的含硅聚合物在相对低的温度下显影。
如果热酸产生剂因热量而产生酸(H+),那么其可以包含任何化合物而不受特定限制。具体来说,其可以包含在90℃或高于90℃下被活化并且产生足够酸以及具有低挥发性的化合物。
热酸产生剂可以例如由甲苯磺酸硝基苯甲酯、苯磺酸硝基苯甲酯、苯酚磺酸酯以及其组合中选出。
以用于形成二氧化硅层的组合物的总量计,所述热酸产生剂可以0.01重量%到25重量%的量包含在内。在所述范围内,聚合物可以在低温下显影并且同时具有改善的涂布特性。
用于形成二氧化硅层的组合物可更包含表面活性剂。
表面活性剂不受特定限制,并且可以为例如非离子表面活性剂,例如聚氧乙烯烷基醚,例如聚氧乙烯十二烷基醚、聚氧乙烯十八烷基醚、聚氧乙烯十六烷基醚、聚氧乙烯油醇醚等;聚氧乙烯烷基烯丙基醚,例如聚氧乙烯壬基酚醚等;聚氧乙烯·聚氧丙烯嵌段共聚物;聚氧乙烯脱水山梨糖醇脂肪酸酯,如脱水山梨糖醇单月桂酸酯、脱水山梨糖醇单棕榈酸酯、脱水山梨糖醇单硬脂酸酯、脱水山梨糖醇单油酸酯、聚氧乙烯脱水山梨糖醇单硬脂酸酯、聚氧乙烯脱水山梨糖醇三油酸酯、聚氧乙烯脱水山梨糖醇三硬酯酸酯等;EFTOPEF301、EFTOPEF303、EFTOP EF352的氟类表面活性剂(托化工制品有限公司(Tochem ProductsCo.,Ltd.))、麦格菲斯F171(MEGAFACE F171)、麦格菲斯F173(大日本油墨及化学有限公司(Dainippon Ink&Chem.,Inc.))、氟罗拉FC430(FLUORAD FC430)、氟罗拉FC431(住友3M(Sumitomo 3M))、旭防护AG710(Asahi guardAG710)、索龙S-382(Surflon S-382)、SC101、SC102、SC103、SC104、SC105、SC106(旭玻璃有限公司(Asahi Glass Co.,Ltd.))等;其它硅酮类表面活性剂,例如有机硅氧烷聚合物KP341(信越化学有限公司(Shin-Etsu ChemicalCo.,Ltd.))等。
以用于形成二氧化硅层的组合物的总量计,所述表面活性剂可以0.001重量%到10重量%的量包含在内。在所述范围内,可以改善溶液的分散,并且同时可以改善层的均一厚度。
用于形成二氧化硅层的组合物可以经由例如旋涂、狭缝涂布、喷墨印刷等溶液法进行涂布。
举例来说,衬底可以为装置衬底,例如半导体、液晶等,但并不限于此。
当形成二氧化硅层的组合物涂布完时,随后将衬底干燥并且固化。举例来说,固化可以例如在包含惰性气体的氛围下在大于150℃或等于150℃下通过施用例如热量、紫外线(ultraviolet,UV)、微波、声波、超声波等能量进行。
制造二氧化硅层的方法为根据以下旋涂法通过在涂布用于形成二氧化硅层的组合物之前涂布包含碳化合物的预润湿液体物质而将较小量的用于形成二氧化硅层的组合物均匀地涂布于衬底上。
当包含在用于形成二氧化硅层的组合物中的组分(例如聚硅氮烷)与空气或空气中的水分接触时,包含碳化合物的预润湿溶液相物质可以抑制气体产生,并且当用于形成二氧化硅层的组合物涂布于衬底上并且由此使空气向二氧化硅层的渗透减到最小时,其会减轻用于形成二氧化硅层的组合物物理性状。
因此,可以减少最终二氧化硅层的表面上的孔缺陷的数量。
根据另一实施例,提供一种由上述方法制造的二氧化硅层。二氧化硅层可以为例如绝缘层、分离层或保护层,例如硬涂层,但并不限于此。
根据又一实施例,提供一种包含由上述方法制造的二氧化硅层的电子装置。所述电子装置可以为例如显示装置,例如液晶显示装置(Liquid Crystal Display,LCD)或发光二极管(Light Emitting Diode,LED);或半导体装置。
以下实例更详细地说明本发明的实施例。然而,这些实例为示范性的,并且本发明不限于此。
制备实例:用于二氧化硅层的组合物
配备有搅拌器和温度控制器的2升反应器在内部用干燥氮气替代。随后,将1,500克干燥吡啶注入反应器中,充分混合,并且保温在20℃下。随后,在一小时内将100克二氯硅烷缓慢注入其中。接着,在3小时内将70克氨水缓慢注射入其中,同时搅拌反应器。随后,将干燥氮气注入其中维持30分钟,并且去除反应器中剩余的氨水。在干燥氮气氛围下,通过1微米特富龙过滤器(Teflon filter)过滤白色浆料相产物,获得1,000克过滤溶液。接着,向其中添加1,000克无水二甲苯,并且通过使用旋转蒸发器总计重复三次用吡啶代替二甲苯将混合物调节到具有20重量%的固体浓度,并且接着使用孔径为0.03微米的特富龙过滤器过滤。获得的聚硅氮烷的氧含量为3.8%,SiH3/SiH(总)为0.22,并且重量平均分子量为4,000。
使聚硅氮烷与二丁醚(dibutylether,DBE)混合,制备固体含量为15±0.1重量%的用于形成二氧化硅层的组合物。
实例1
用旋转涂布机(MS-A200,三笠有限公司(MIKASA Co.,Ltd.)将3.0毫升三甲苯(trimethylbenzene,TMB)作为预润湿液体物质在2000转/分钟下维持20秒旋涂于直径为12英寸的硅晶片的中心,并且接着在相同条件下将3.0毫升根据制备实例的用于二氧化硅层的组合物旋涂于其上,并且接着在加热板上在150℃下加热3分钟,形成薄膜。
实例2
除使用以7∶3的质量比混合的三甲苯(TMB)(作为预润湿液体物质)与二丁醚(DBE)的3.0毫升混合溶液外,根据与实例1相同的方法形成薄膜。
实例3
除使用二丁醚(DBE)作为预润湿液体物质外,根据与实例1相同的方法形成薄膜。
比较例1
除不涂布预润湿液体物质外,根据与实例1相同的方法形成薄膜。
评估1:膜厚度的均一性
根据实例1到实例3和比较例1的薄膜的平均厚度、厚度范围(最大厚度-最小厚度)以及厚度均一性通过标定9个如图1中所示由K-MAC在晶片上制得的呈十字(+)形的点通过使用反射光谱型膜厚度计(ST-5000)来评估。
膜厚度均一性根据以下等式1来评估。
[等式1]
厚度均一性=[(最大厚度-最小厚度)/2/平均厚度]×100
结果提供在表1中。
[表1]
参见表1,与根据比较例1的未经历预润湿方法的膜相比,根据实例1到实例3的经由预定预润湿方法处理的薄膜的厚度均一性较小。
实例4到实例6以及比较例2
根据实例1到实例3以及比较例1的薄膜在评估膜厚度均一性之后分别在约800℃的高温下氧化,并且转化为氧化层,并且接着进行蚀刻,以各自形成二氧化硅层。
评估2:二氧化硅层的孔缺陷
通过使用AIT XP(AIT XP辐深(AIT XP Fusion),科磊公司(KLA-Tencor Corp.))和电子显微镜(S5500,日立株式会社(Hitachi Ltd.))检验根据实例4到实例6以及比较实例2的二氧化硅层的缺陷。计数图案上全部缺陷中的直径大于150纳米或等于约150纳米的球形缺陷并且视为孔缺陷。
结果提供在表2中。
[表2]
比较例2 | 实例4 | 实例5 | 实例6 | |
全部缺陷数量 | 174 | 94 | 64 | 156 |
孔缺陷的数量 | 41 | 1 | 0 | 2 |
孔缺陷比率(%) | 23.56 | 1.06 | 0.00 | 1.28 |
参见表2,与根据比较例2的未经历预润湿方法的二氧化硅层相比,根据实例4到实例6的经由预定预润湿方法形成的二氧化硅层显示相对较少的全部缺陷,且尤其较少孔缺陷。
虽然已经结合目前视为实用的示范性实施例的内容来描述本发明,但应了解本发明不限于所公开的实施例,正相反,本发明旨在涵盖包含在所附权利要求书的精神和范围内的各种修改和等效布置。
Claims (8)
1.一种制造二氧化硅层的方法,其特征在于,包括
将包含碳化合物的预润湿液体物质涂布于衬底上,
将用于形成二氧化硅层的组合物涂布于涂布有所述预润湿液体物质的所述衬底上,以及
使涂布有所述用于形成二氧化硅层的组合物的所述衬底固化,
其中所述用于形成二氧化硅层的组合物包括含硅聚合物和溶剂,
其中所述含硅聚合物包括聚硅氮烷,
其中所述碳化合物在结构中包括经取代或未经取代的苯环并且所述碳化合物的总碳数为9到14。
2.根据权利要求1所述的方法,其特征在于,所述碳化合物的沸点为98℃到200℃。
3.根据权利要求1所述的方法,其特征在于,所述碳化合物包括经取代或未经取代的三甲苯、经取代或未经取代的二乙苯或其组合。
4.根据权利要求1所述的方法,其特征在于,所述溶剂包括由以下各项中选出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、环己烷、环己烯、十氢萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基环己烷、甲基环己烷、对薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基异丁酮以及其组合。
5.根据权利要求1所述的方法,其特征在于,所述用于形成二氧化硅层的组合物是经由使用旋涂法进行涂布。
6.根据权利要求1所述的方法,其特征在于,所述固化是在150℃以上的包括惰性气体的氛围下进行。
7.一种二氧化硅层,其特征在于,通过根据权利要求1到6中任一项所述的方法制造。
8.一种电子装置,其特征在于,包括根据权利要求7所述的二氧化硅层。
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