TW201724171A - 製造二氧化矽層的方法、二氧化矽層以及電子裝置 - Google Patents
製造二氧化矽層的方法、二氧化矽層以及電子裝置 Download PDFInfo
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- TW201724171A TW201724171A TW105114482A TW105114482A TW201724171A TW 201724171 A TW201724171 A TW 201724171A TW 105114482 A TW105114482 A TW 105114482A TW 105114482 A TW105114482 A TW 105114482A TW 201724171 A TW201724171 A TW 201724171A
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- Prior art keywords
- cerium oxide
- oxide layer
- producing
- composition
- layer according
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 14
- 239000000377 silicon dioxide Substances 0.000 title abstract 7
- 239000000203 mixture Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000009736 wetting Methods 0.000 claims abstract description 26
- 150000001722 carbon compounds Chemical class 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 48
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 32
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 32
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 24
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 15
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 claims description 14
- 239000008096 xylene Substances 0.000 claims description 11
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 10
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N ortho-diethylbenzene Natural products CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 6
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 6
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims description 6
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims description 6
- 150000003738 xylenes Chemical class 0.000 claims description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 5
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 claims description 4
- VIDOPANCAUPXNH-UHFFFAOYSA-N 1,2,3-triethylbenzene Chemical compound CCC1=CC=CC(CC)=C1CC VIDOPANCAUPXNH-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- 229940072049 amyl acetate Drugs 0.000 claims description 3
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 150000001555 benzenes Chemical group 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000005195 diethylbenzenes Chemical class 0.000 claims description 3
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 3
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 3
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011344 liquid material Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 15
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- 230000007547 defect Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 4
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- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 125000003172 aldehyde group Chemical group 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
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- 229930004008 p-menthane Natural products 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- UROWAZWGAADJLH-UHFFFAOYSA-N [nitro(phenyl)methyl] benzenesulfonate Chemical compound C=1C=CC=CC=1C([N+](=O)[O-])OS(=O)(=O)C1=CC=CC=C1 UROWAZWGAADJLH-UHFFFAOYSA-N 0.000 description 1
- JIUXFBUKJVITEX-UHFFFAOYSA-N [nitro(phenyl)methyl] phenylmethanesulfonate Chemical compound C(C1=CC=CC=C1)S(=O)(=O)OC(C1=CC=CC=C1)[N+](=O)[O-] JIUXFBUKJVITEX-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000005567 fluorenylene group Chemical group 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229940044652 phenolsulfonate Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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Abstract
本發明提供一種製造二氧化矽層的方法、二氧化矽層以及電子裝置。製造二氧化矽層的方法包含將包含碳化合物的預潤濕液體物質塗布於基板上、將用於形成二氧化矽層的組成物塗布於塗布有預潤濕液體物質的基板上以及使塗布有用於形成二氧化矽層的組成物的基板固化。
Description
本發明是有關一種製造二氧化矽層的方法、由其製造的二氧化矽層以及包含所述二氧化矽層的電子裝置。
平板顯示器使用包含閘極電極、源極電極、汲極電極以及半導體的薄膜電晶體(thin film transistor,TFT)作為切換裝置,並且配備有傳遞用於控制薄膜電晶體的掃描信號的閘極線和傳遞施加到像素電極的信號的資料線。另外,在半導體與若干電極之間形成絕緣層以將其隔開。絕緣層可以為包含矽組分的二氧化矽層。二氧化矽層可以由將用於形成二氧化矽層的組成物塗布於基板上而形成,並且在本文中,當呈液相的用於形成二氧化矽層的組成物並未充分潤濕呈固相的基板時,二氧化矽層的均勻性可能劣化,並且另外,因為大量使用組成物,所以塗布過程的效率可能劣化。
一個實施例提供一種通過使用少量用於形成二氧化矽層的組成物製造具有均勻性的二氧化矽層的方法。
另一實施例提供一種根據所述方法製造的二氧化矽層。
又一實施例提供一種包含二氧化矽層的電子裝置。
根據一個實施例,製造二氧化矽層的方法包含將包含碳化合物的預潤濕液體物質塗布於基板上,將用於形成二氧化矽層的組成物塗布於塗布有預潤濕液體物質的基板上以及使塗布有用於形成二氧化矽層的組成物的基板固化。
碳化合物可以在結構中包含經取代或未經取代的苯環,並且碳化合物的總碳數為6到14。
碳化合物可以具有98℃到200℃範圍內的沸點。
碳化合物可以包含經取代或未經取代的三甲苯、經取代或未經取代的二甲苯、經取代或未經取代的二乙苯或其組合。
用於形成二氧化矽層的組成物可以包含含矽聚合物和溶劑。
含矽聚合物可以包含聚矽氮烷、聚矽氧烷或其組合。
溶劑可以包含由以下各項中選出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、環己烷、環己烯、十氫萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基環己烷、甲基環己烷、對薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基異丁酮以及其組合。
用於形成二氧化矽層的組成物的塗布可以使用旋塗法進行。
固化可以在大於150℃或等於150℃下在包含惰性氣體的氛圍下進行。
根據另一實施例,提供一種由製造二氧化矽層的方法形成的二氧化矽層。
根據又一實施例,提供一種包含二氧化矽層的電子裝置。
在塗布用於形成二氧化矽層的組成物之前,可以進行基板的預定的預處理,以使得用於二氧化矽層形成的組成物可以充分潤濕基板,並且可以有效塗布少量組成物,形成均勻的二氧化矽層。
下文將詳細描述本發明的示範性實施例,並且其可以通過具有相關技術常識的人員容易地執行。然而,本發明可以按多種不同形式實施,並且不理解為限於本文中所闡述的示範性實施例。
在圖中,為清楚起見放大層、膜、面板、區域等的厚度。在整篇說明書中,相同的元件符號表示相同的元件。應理解,當如層、膜、區域或基板的元件被稱作在另一個元件「上」時,其可以直接在另一個元件上或還可以存在插入元件。相比之下,當元件被稱作「直接在」另一個元件「上」時,不存在插入元件。
如本文所用,當未另外提供定義時,術語‘經取代’是指經由以下各項中選出的取代基取代:鹵素原子(F、Br、Cl或I)、羥基、烷氧基、硝基、氰基、氨基、疊氮基、脒基、肼基、亞肼基、羰基、氨甲醯基、硫醇基、酯基、羧基或其鹽、磺酸基或其鹽、磷酸或其鹽、烷基、C2到C16烯基、C2到C16炔基、芳基、C7到C13芳基烷基、C1到C4氧基烷基、C1到C20雜烷基、C3到C20雜芳基烷基、環烷基、C3到C15環烯基、C6到C15環炔基、雜環烷基以及其組合,代替化合物的氫。
如本文所用,當未另外提供定義時,術語‘雜’是指包含1到3個由以下各項中選出的雜原子:N、O、S以及P。
另外,在說明書中,「*」是指與相同或不同的原子或化學式的連接點。
在下文中,描述一種根據一個實施例的製造二氧化矽層的方法。
根據一個實施例的製造二氧化矽層的方法包含將包含碳化合物的預潤濕液體物質塗布於基板上,將用於形成二氧化矽層的組成物塗布於塗布有預潤濕液體物質的基板上以及使塗布有用於形成二氧化矽層的組成物的基板固化。
預潤濕表示在潤濕之前進行的預處理方法,並且被稱為減少抗蝕劑消耗(Reduced resist consumption,RRC)。
根據一個實施例的製造二氧化矽層的方法包含將包含碳化合物的預潤濕液體物質塗布於基板上,之後塗布用於形成二氧化矽層的組成物。因此,預潤濕液體物質的塗布可以改善用於形成二氧化矽層的組成物的塗布特徵,也就是說,基板(固體)與用於形成二氧化矽層的組成物(液體)之間的潤濕特徵。
碳化合物可以在結構中包含經取代或未經取代的苯環,並且碳化合物的總碳數為6到14。當使用包含碳化合物的預潤濕液體物質時,不但可以在以下塗布用於形成二氧化矽層的組成物的方法中形成更均勻的薄膜,而且還可以減少薄膜表面上的孔缺陷的數量。
舉例來說,碳化合物可以具有98℃到200℃,例如(但不限於)100℃到180℃的沸點。
舉例來說,碳化合物可以為由以下各項中選出的一或多者:經取代或未經取代的三甲苯、經取代或未經取代的二甲苯以及經取代或未經取代的二乙苯,但並不限於此。
預潤濕液體物質可以為碳化合物本身、兩種以上碳化合物的混合物或包含除碳化合物外的其他組分的溶液。
預潤濕液體物質可以例如(但不特定限於)按旋塗布、狹縫塗布、噴墨印刷等方法塗布。
當預潤濕液體物質塗布完時,可以將用於形成二氧化矽層的組成物塗布於基板上。
用於二氧化矽層的組成物可以包含含矽聚合物和溶劑。
用於形成二氧化矽層的組成物的含矽聚合物可以包含由化學式1表示的部分。
[化學式1]
在化學式1中,R1
到R3
獨立地為氫、經取代或未經取代的C1到C30烷基、經取代或未經取代的C3到C30環烷基、經取代或未經取代的C6到C30芳基、經取代或未經取代的C7到C30芳基烷基、經取代或未經取代的C1到C30雜烷基、經取代或未經取代的C2到C30雜環烷基、經取代或未經取代的C2到C30烯基、經取代或未經取代的烷氧基、羧基、醛基、羥基或其組合,並且「*」指示連接點。
舉例來說,含矽聚合物可以為藉由使鹵代矽烷與氨水反應製備的聚矽氮烷。
舉例來說,除化學式1的部分以外,用於形成二氧化矽層的組成物的含矽聚合物可以更包含由化學式2表示的部分。
[化學式2]
在化學式2中,R4
到R7
獨立地為氫、經取代或未經取代的C1到C30烷基、經取代或未經取代的C3到C30環烷基、經取代或未經取代的C6到C30芳基、經取代或未經取代的C7到C30芳基烷基、經取代或未經取代的C1到C30雜烷基、經取代或未經取代的C2到C30雜環烷基、經取代或未經取代的C2到C30烯基、經取代或未經取代的烷氧基、羧基、醛基、羥基或其組合,「*」指示連接點。
在本文中,除結構中的矽-氮(Si-N)鍵部分以外,含矽聚合物包含矽-氧-矽(Si-O-Si)鍵部分,並且所述矽-氧-矽(Si-O-Si)鍵部分在經由熱處理固化期間可以減緩應力並且由此減小收縮。
舉例來說,含矽聚合物包含由化學式1表示的部分、由化學式2表示的部分,並且可以更包含由化學式3表示的部分。
[化學式3]
由化學式3表示的部分為末端以氫封端的結構,並且可以聚矽氮烷或聚矽氧烷結構的Si-H鍵的總量計15重量%到35重量%的量包含在內。當化學式3的部分在所述範圍內包含在聚矽氮烷或聚矽氧烷結構中時,會防止SiH3
部分分散至SiH4
,同時在熱處理期間充分發生氧化反應,並且可以防止填料圖案中出現裂紋。
以用於形成二氧化矽層的組成物的總量計,所述含矽聚合物可以0.1重量%到50重量%、例如0.1重量%到30重量%的量包含在內。當其在所述範圍內包含時,其可以維持適當黏度並且產生平坦、均一並且不具有間隙(空隙)的層。
用於形成二氧化矽層的組成物的溶劑可以為(但不限於)可溶解含矽聚合物的任何溶劑,並且具體來說可以包含由以下各項中選出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、環己烷、環己烯、十氫萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基環己烷、甲基環己烷、對薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基異丁基酮以及其組合。
用於形成二氧化矽層的組成物可以更包含熱酸產生劑(thermal acid generator,TAG)。
熱酸產生劑可以為改善用於形成二氧化矽類層的組成物的顯影特性的添加劑,並且由此使得所述組成物的含矽聚合物在相對低的溫度下顯影。
如果熱酸產生劑因熱量而產生酸(H+
),那麼其可以包含任何化合物而不受特定限制。具體來說,其可以包含在90℃或高於90℃下被活化並且產生足夠酸以及具有低揮發性的化合物。
熱酸產生劑可以例如由甲苯磺酸硝基苯甲酯、苯磺酸硝基苯甲酯、苯酚磺酸酯以及其組合中選出。
以用於形成二氧化矽層的組成物的總量計,所述熱酸產生劑可以0.01重量%到25重量%的量包含在內。在所述範圍內,聚合物可以在低溫下顯影並且同時具有改善的塗布特性。
用於形成二氧化矽層的組成物可更包含表面活性劑。
表面活性劑不受特定限制,並且可以為例如非離子表面活性劑,例如聚氧乙烯烷基醚,例如聚氧乙烯十二烷基醚、聚氧乙烯十八烷基醚、聚氧乙烯十六烷基醚、聚氧乙烯油醇醚等;聚氧乙烯烷基烯丙基醚,例如聚氧乙烯壬基酚醚等;聚氧乙烯·聚氧丙烯嵌段共聚物;聚氧乙烯脫水山梨糖醇脂肪酸酯,如脫水山梨糖醇單月桂酸酯、脫水山梨糖醇單棕櫚酸酯、脫水山梨糖醇單硬脂酸酯、脫水山梨糖醇單油酸酯、聚氧乙烯脫水山梨糖醇單硬脂酸酯、聚氧乙烯脫水山梨糖醇三油酸酯、聚氧乙烯脫水山梨糖醇三硬酯酸酯等;EFTOP EF301、EFTOP EF303、EFTOP EF352的氟類表面活性劑(托化工製品有限公司(Tochem Products Co., Ltd.))、麥格菲斯F171(MEGAFACE F171)、麥格菲斯F173(大日本油墨及化學有限公司(Dainippon Ink & Chem., Inc.))、氟羅拉FC430(FLUORAD FC430)、氟羅拉FC431(住友3M(Sumitomo 3M))、旭防護AG710(Asahi guardAG710)、索龍S-382(Surflon S-382)、SC101、SC102、SC103、SC104、SC105、SC106(旭玻璃有限公司(Asahi Glass Co., Ltd.))等;其他矽酮類表面活性劑,例如有機矽氧烷聚合物KP341(信越化學有限公司(Shin-Etsu Chemical Co., Ltd.))等。
以用於形成二氧化矽層的組成物的總量計,所述表面活性劑可以0.001重量%到10重量%的量包含在內。在所述範圍內,可以改善溶液的分散,並且同時可以改善層的均一厚度。
用於形成二氧化矽層的組成物可以經由例如旋塗、狹縫塗布、噴墨印刷等溶液製程進行塗布。
舉例來說,基板可以為裝置基板,例如半導體、液晶等,但並不限於此。
當形成二氧化矽層的組成物塗布完時,隨後將基板乾燥並且固化。舉例來說,固化可以例如在包含惰性氣體的氛圍下在大於150℃或等於150℃下藉由施用例如熱量、紫外線(ultraviolet,UV)、微波、聲波、超聲波等能量進行。
製造二氧化矽層的方法為根據以下旋塗法藉由在塗布用於形成二氧化矽層的組成物之前塗布包含碳化合物的預潤濕液體物質而將較小量的用於形成二氧化矽層的組成物均勻地塗布於基板上。
當包含在用於形成二氧化矽層的組成物中的組分(例如聚矽氮烷)與空氣或空氣中的水分接觸時,包含碳化合物的預潤濕溶液相物質可以抑制氣體產生,並且當用於形成二氧化矽層的組成物塗布於基板上並且由此使空氣向二氧化矽層的滲透減到最小時,其會減輕用於形成二氧化矽層的組成物物理性狀。
因此,可以減少最終二氧化矽層的表面上的孔缺陷的數量。
根據另一實施例,提供一種由上述方法製造的二氧化矽層。二氧化矽層可以為例如絕緣層、分離層或保護層,例如硬塗層,但並不限於此。
根據又一實施例,提供一種包含由上述方法製造的二氧化矽層的電子裝置。所述電子裝置可以為例如顯示裝置,例如液晶顯示裝置(Liquid Crystal Display,LCD)或發光二極體(Light Emitting Diode,LED);或半導體裝置。
以下實例更詳細地說明本發明的實施例。然而,這些實例為示範性的,並且本發明不限於此。
製備實例:用於二氧化矽層的組成物
配備有攪拌器和溫度控制器的2升反應器在內部用乾燥氮氣替代。隨後,將1,500克乾燥吡啶注入反應器中,充分混合,並且保溫在20℃下。隨後,在一小時內將100克二氯矽烷緩慢注入其中。接著,在3小時內將70克氨水緩慢注射入其中,同時攪拌反應器。隨後,將乾燥氮氣注入其中維持30分鐘,並且去除反應器中剩餘的氨水。在乾燥氮氣氛圍下,通過1微米特富龍篩檢程式(Teflon filter)過濾白色漿料相產物,獲得1,000克過濾溶液。接著,向其中添加1,000克無水二甲苯,並且藉由使用旋轉蒸發器總計重複三次用吡啶代替二甲苯將混合物調節到具有20重量%的固體濃度,並且接著使用孔徑為0.03微米的特富龍篩檢程式過濾。獲得的聚矽氮烷的氧含量為3.8%,SiH3
/SiH(總)為0.22,並且重量平均分子量為4,000。
使聚矽氮烷與二丁醚(dibutylether,DBE)混合,製備固體含量為15±0.1重量%的用於形成二氧化矽層的組成物。
實例
1
用旋轉塗布機(MS-A200,三笠有限公司(MIKASA Co., Ltd.)將3.0毫升三甲苯(trimethylbenzene,TMB)作為預潤濕液體物質在2000轉/分鐘下維持20秒旋塗於直徑為12英寸的矽晶片的中心,並且接著在相同條件下將3.0毫升根據製備實例的用於二氧化矽層的組成物旋塗於其上,並且接著在加熱板上在150℃下加熱3分鐘,形成薄膜。
實例
2
除使用以7:3的質量比混合的三甲苯(TMB)(作為預潤濕液體物質)與二丁醚(DBE)的3.0毫升混合溶液外,根據與實例1相同的方法形成薄膜。
實例
3
除使用二丁醚(DBE)作為預潤濕液體物質外,根據與實例1相同的方法形成薄膜。
比較例
1
除不塗布預潤濕液體物質外,根據與實例1相同的方法形成薄膜。
評估
1:
膜厚度的均一性
根據實例1到實例3和比較例1的薄膜的平均厚度、厚度範圍(最大厚度-最小厚度)以及厚度均一性藉由標出9個如圖1中所示由K-MAC在晶片上制得的呈十字(+)形的點通過使用反射光譜型膜厚度計(ST-5000)來評估。
膜厚度均一性根據以下等式1來評估。
[等式1] 厚度均一性=[(最大厚度-最小厚度)/2/平均厚度] × 100
結果提供在表1中。
[表1]
參見表1,與根據比較例1的未經歷預潤濕方法的膜相比,根據實例1到實例3的經由預定預潤濕方法處理的薄膜的厚度均一性較小。
實例4到實例6以及比較例2
根據實例1到實例3以及比較例1的薄膜在評估膜厚度均一性之後分別在約800℃的高溫下氧化,並且轉化為氧化層,並且接著進行蝕刻,以各自形成二氧化矽層。
評估2:二氧化矽層的孔缺陷
通過使用AIT XP(AIT XP輻深(AIT XP Fusion), 科磊公司(KLA-Tencor Corp.))和電子顯微鏡(S5500,日立株式會社(Hitachi Ltd.))檢驗根據實例4到實例6以及比較實例2的二氧化矽層的缺陷。計數圖案上全部缺陷中的直徑大於150奈米或等於約150奈米的球形缺陷並且視為孔缺陷。
結果提供在表2中。
[表2]
參見表2,與根據比較例2的未經歷預潤濕方法的二氧化矽層相比,根據實例4到實例6的經由預定預潤濕方法形成的二氧化矽層顯示相對較少的全部缺陷,且尤其較少孔缺陷。
雖然已經結合目前視為實用的示範性實施例的內容來描述本發明,但應瞭解本發明不限於所公開的實施例,正相反,本發明旨在涵蓋包含在所附權利要求書的精神和範圍內的各種修改和等效佈置。
無。
圖1為說明評估二氧化矽層的厚度均勻性的方法的參考視圖。
Claims (11)
- 一種製造二氧化矽層的方法,包括 將包含碳化合物的預潤濕液體物質塗布於基板上, 將用於形成二氧化矽層的組成物塗布於塗布有所述預潤濕液體物質的所述基板上,以及 使塗布有所述用於形成二氧化矽層的組成物的所述基板固化。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所述碳化合物在結構中包括經取代或未經取代的苯環並且所述碳化合物的總碳數為6到14。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所述碳化合物的沸點為98℃到200℃。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所碳化合物包括經取代或未經取代的三甲苯、經取代或未經取代的二甲苯、經取代或未經取代的二乙苯或其組合。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所述用於形成二氧化矽層的組成物包括含矽聚合物和溶劑。
- 如申請專利範圍第5項所述的製造二氧化矽層的方法,其中所述含矽聚合物包括聚矽氮烷、聚矽氧烷或其組合。
- 如申請專利範圍第5項所述的製造二氧化矽層的方法,所述溶劑包括由以下各項中選出的至少一者:苯、甲苯、二甲苯、乙苯、二乙苯、三甲苯、三乙苯、環己烷、環己烯、十氫萘、二戊烯、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、乙基環己烷、甲基環己烷、對薄荷烷、二丙醚、二丁醚、茴香醚、乙酸丁酯、乙酸戊酯、甲基異丁酮以及其組合。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所述用於形成二氧化矽層的組成物是藉由使用旋塗法進行塗布。
- 如申請專利範圍第1項所述的製造二氧化矽層的方法,其中所述固化是在150℃以上的包括惰性氣體的氛圍下進行。
- 一種二氧化矽層,通過如申請專利範圍第1項到第9項中任一項所述的製造二氧化矽層的方法製造。
- 一種電子裝置,包括如申請專利範圍第10項所述的二氧化矽層。
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