KR100492157B1 - 반도체 장치의 산화 실리콘막 형성방법 - Google Patents
반도체 장치의 산화 실리콘막 형성방법 Download PDFInfo
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- KR100492157B1 KR100492157B1 KR20030010159A KR20030010159A KR100492157B1 KR 100492157 B1 KR100492157 B1 KR 100492157B1 KR 20030010159 A KR20030010159 A KR 20030010159A KR 20030010159 A KR20030010159 A KR 20030010159A KR 100492157 B1 KR100492157 B1 KR 100492157B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
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- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (25)
- 상면상에 형성된 단차부를 갖는 반도체 기판상에 구조식이 -(SiH2NH)n-(식중, n 은 양의 정수이다)이고, 중량평균 분자량이 4000 내지 8000이고, 분자량 분포도가 3.0 내지 4.0인 퍼하이드로 폴리실라잔 20 내지 30중량%, 및 용매 80 내지 70중량%을 포함하는 스핀온글라스(SOG; spin-on-glass) 조성물을 도포하여 평탄한 SOG막을 형성하는 단계;상기 반도체 기판의 가장자리에 상기 SOG막이 두껍게 형성될 경우 에지 비드 제거(edge bead removal) 공정을 수행하는 단계;100 내지 500℃ 의 온도 범위에서 1 내지 10분 동안 프리-베이크하는 단계;웨이퍼의 로딩을 위한 퍼니스의 로딩 온도를 500℃ 이하의 온도 범위로 유지하는 단계;상기 웨이퍼를 로딩하는 단계;상기 웨이퍼의 로딩후 퍼니스의 온도를 7±3℃/분의 속도로 상승시키는 공정을 수행하는 단계; 및500 내지 1200℃ 의 온도 범위에서 10 내지 120분 동안 메인-베이크하는 단계를 포함하는 반도체 장치의 산화 실리콘막 형성 방법.
- 삭제
- 제1항에 있어서, 상기 산화 실리콘막의 형성후 CMP(chemical mechanical polishing) 공정을 더 수행하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법..
- 제1항에 있어서, 상기 프리-베이크는 130 내지 230℃의 온도 범위에서 4 내지 6분 동안 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 프리-베이크는 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 메인-베이크는 30 내지 60분 동안 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 메인-베이크는 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 삭제
- 제1항에 있어서, 상기 퍼니스의 온도 상승은 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 삭제
- 삭제
- 제1항에 있어서, 상기 SOG 조성물은 54 내지 420 (1/s)의 전단 속도에서 1 내지 10 mPa.s의 일정한 점도를 갖는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG 조성물은 하지막에 대하여 4°이하의 콘택트 각을 갖는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG 조성물은 붕소, 불소, 인, 비소, 탄소 및 산소로 구성된 군에서 선택된 적어도 하나의 원소를 포함하는 불순물을 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 용매는 크실렌 또는 디부틸에테르인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 산화 실리콘막의 두께가 4000 내지 6500Å인 것을 특징으로 하는 반도체 장치의 산화 실리콘막의 형성 방법.
- 제1항에 있어서, 상기 단차부는 적어도 두 개의 도전성 패턴에 의해 형성되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제17항에 있어서, 상기 두 개의 도전성 패턴간의 거리는 0.04 내지 1㎛인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제17항에 있어서, 상기 두 개의 도전성 패턴은 반도체 장치의 게이트 전극 또는 금속 배선 패턴인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 단차부는 어스펙트비가 5:1 내지 10:1인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 단차부는 어스펙트비가 5:1 내지 10:1인 밀집 단차부와 어스펙트비가 1:1 이하인 글로벌 단차부를 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG 조성물을 도포하기 전에 질화실리콘막을 200 내지 600Å의 두께로 형성하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 삭제
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR20030010159A KR100492157B1 (ko) | 2003-02-18 | 2003-02-18 | 반도체 장치의 산화 실리콘막 형성방법 |
US10/779,733 US7053005B2 (en) | 2000-05-02 | 2004-02-18 | Method of forming a silicon oxide layer in a semiconductor manufacturing process |
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KR20030010159A KR100492157B1 (ko) | 2003-02-18 | 2003-02-18 | 반도체 장치의 산화 실리콘막 형성방법 |
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KR20040074763A KR20040074763A (ko) | 2004-08-26 |
KR100492157B1 true KR100492157B1 (ko) | 2005-06-02 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110242021A1 (en) * | 2010-04-05 | 2011-10-06 | Samsung Mobile Display Co., Ltd. | Flat panel display integrated touch screen panel and fabrication method thereof |
US9721785B2 (en) | 2015-09-25 | 2017-08-01 | Samsung Sdi Co., Ltd. | Method for manufacturing silica layer, silica layer, and electronic device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011078446A1 (en) * | 2009-12-23 | 2011-06-30 | Dnf Co., Ltd. | Polysilazane treating solvent and method for treating polysilazane using the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110242021A1 (en) * | 2010-04-05 | 2011-10-06 | Samsung Mobile Display Co., Ltd. | Flat panel display integrated touch screen panel and fabrication method thereof |
US9721785B2 (en) | 2015-09-25 | 2017-08-01 | Samsung Sdi Co., Ltd. | Method for manufacturing silica layer, silica layer, and electronic device |
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