KR20040074763A - 반도체 장치의 산화 실리콘막 형성방법 - Google Patents
반도체 장치의 산화 실리콘막 형성방법 Download PDFInfo
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- KR20040074763A KR20040074763A KR1020030010159A KR20030010159A KR20040074763A KR 20040074763 A KR20040074763 A KR 20040074763A KR 1020030010159 A KR1020030010159 A KR 1020030010159A KR 20030010159 A KR20030010159 A KR 20030010159A KR 20040074763 A KR20040074763 A KR 20040074763A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C23C18/1212—Zeolites, glasses
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Abstract
Description
Claims (25)
- 상면상에 형성된 단차부를 갖는 반도체 기판상에 스핀온글라스(SOG; spin-on-glass) 조성물을 도포하여 평탄한 SOG막을 형성하는 단계;100 내지 500℃의 온도 범위에서 1 내지 10분 동안 프리-베이크하는 단계;웨이퍼의 로딩을 위한 퍼니스의 로딩 온도를 500℃ 이하의 온도 범위로 유지하는 단계;웨이퍼를 로딩하는 단계; 및500 내지 1200℃의 온도 범위에서 10 내지 120분 동안 메인-베이크하는 단계를 포함하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG막의 형성후 에지 비드 제거(edge bead removal) 공정을 더 수행하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제2항에 있어서, 상기 산화 실리콘막의 형성후 CMP(chemical mechanical polishing) 공정을 더 수행하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 프리-베이크는 130 내지 230℃의 온도 범위에서 4 내지 6분 동안 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 프리-베이크는 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 메인-베이크는 30 내지 60분 동안 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 메인-베이크는 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 웨이퍼의 로딩후 퍼니스의 온도를 7±3℃/분의 속도로 상승시키는 공정을 더 수행하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제8항에 있어서, 상기 퍼니스의 온도 상승은 공기중, 산소 분위기, 수증기 분위기, 산소와 수증기의 혼합 분위기, 질소 분위기 또는 진공중에서 수행되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG 조성물이 폴리실라잔계 SOG 조성물인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제10항에 있어서, 상기 SOG 조성물이구조식이 -(SiH2NH)n-(식중, n 은 양의 정수이다)이고, 중량평균 분자량이 4000 내지 8000이고, 분자량 분포도가 3.0 내지 4.0인 퍼하이드로 폴리실라잔 20 내지 30중량%; 및용매 80 내지 70중량%을 포함하는 것임을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제11항에 있어서, 상기 SOG 조성물은 54 내지 420 (1/s)의 전단 속도에서 1 내지 10 mPa.s의 일정한 점도를 갖는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제11항에 있어서, 상기 SOG 조성물은 하지막에 대하여 4°이하의 콘택트 각을 갖는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제11항에 있어서, 상기 SOG 조성물은 붕소, 불소, 인, 비소, 탄소 및 산소로 구성된 군에서 선택된 적어도 하나의 원소를 포함하는 불순물을 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제11항에 있어서, 상기 용매는 크실렌 또는 디부틸에테르인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 산화 실리콘막의 두께가 4000 내지 6500Å인 것을 특징으로 하는 반도체 장치의 산화 실리콘막의 형성 방법.
- 제1항에 있어서, 상기 단차부는 적어도 두 개의 도전성 패턴에 의해 형성되는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제17항에 있어서, 상기 두 개의 도전성 패턴간의 거리는 0.04 내지 1㎛인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제17항에 있어서, 상기 두 개의 도전성 패턴은 반도체 장치의 게이트 전극 또는 금속 배선 패턴인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 단차부는 어스펙트비가 5:1 내지 10:1인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 단차부는 어스펙트비가 5:1 내지 10:1인 밀집 단차부와 어스펙트비가 1:1 이하인 글로벌 단차부를 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제1항에 있어서, 상기 SOG 조성물을 도포하기 전에 질화실리콘막을 200 내지 600Å의 두께로 형성하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 상면상에 형성된 단차부를 갖는 반도체 기판상에 구조식이 -(SiH2NH)n-(식중, n 은 양의 정수이다)이고, 중량평균 분자량이 4000 내지 8000이고, 분자량 분포도가 3.0 내지 4.0인 퍼하이드로 폴리실라잔 20 내지 30중량%, 및 용매 80 내지 70중량%을 포함하는 스핀온글라스(SOG; spin-on-glass) 조성물을 도포하여 평탄한 SOG막을 형성하는 단계;130 내지 230℃의 온도 범위에서 4 내지 6분 동안 프리-베이크하는 단계;웨이퍼의 로딩을 위한 퍼니스의 로딩 온도를 500℃ 이하의 온도 범위로 유지하는 단계;상기 웨이퍼의 로딩후 퍼니스의 온도를 7±3℃/분의 속도로 상승시키는 공정을 수행하는 단계; 및500 내지 1200℃의 온도 범위에서 30 내지 60분 동안 메인-베이크하는 단계를 포함하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제23항에 있어서, 상기 SOG막의 형성후 에지 비드 제거(edge bead removal) 공정을 더 수행하고 상기 산화 실리콘막의 형성후 CMP(chemical mechanical polishing) 공정을 더 수행하는 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
- 제23항에 있어서, 상기 단차부는 어스펙트비가 5:1 내지 10:1인 것을 특징으로 하는 반도체 장치의 산화 실리콘막 형성 방법.
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US10/779,733 US7053005B2 (en) | 2000-05-02 | 2004-02-18 | Method of forming a silicon oxide layer in a semiconductor manufacturing process |
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KR101895912B1 (ko) | 2015-09-25 | 2018-09-07 | 삼성에스디아이 주식회사 | 실리카 막의 제조방법, 실리카 막 및 전자소자 |
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