JP2015185832A5 - - Google Patents

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Publication number
JP2015185832A5
JP2015185832A5 JP2014064193A JP2014064193A JP2015185832A5 JP 2015185832 A5 JP2015185832 A5 JP 2015185832A5 JP 2014064193 A JP2014064193 A JP 2014064193A JP 2014064193 A JP2014064193 A JP 2014064193A JP 2015185832 A5 JP2015185832 A5 JP 2015185832A5
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JP
Japan
Prior art keywords
heat sink
semiconductor chip
control terminal
passive component
island
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Application number
JP2014064193A
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English (en)
Japanese (ja)
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JP2015185832A (ja
JP6256145B2 (ja
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Priority claimed from JP2014064193A external-priority patent/JP6256145B2/ja
Priority to JP2014064193A priority Critical patent/JP6256145B2/ja
Priority to US15/128,126 priority patent/US9935074B2/en
Priority to PCT/JP2015/001622 priority patent/WO2015146130A1/ja
Priority to CN201580015859.2A priority patent/CN106133906B/zh
Priority to DE112015001398.9T priority patent/DE112015001398B4/de
Publication of JP2015185832A publication Critical patent/JP2015185832A/ja
Publication of JP2015185832A5 publication Critical patent/JP2015185832A5/ja
Publication of JP6256145B2 publication Critical patent/JP6256145B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014064193A 2014-03-26 2014-03-26 半導体装置及びその製造方法 Active JP6256145B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014064193A JP6256145B2 (ja) 2014-03-26 2014-03-26 半導体装置及びその製造方法
DE112015001398.9T DE112015001398B4 (de) 2014-03-26 2015-03-23 Halbleitervorrichtung und Verfahren zum Herstellen derselben
PCT/JP2015/001622 WO2015146130A1 (ja) 2014-03-26 2015-03-23 半導体装置及びその製造方法
CN201580015859.2A CN106133906B (zh) 2014-03-26 2015-03-23 半导体装置及其制造方法
US15/128,126 US9935074B2 (en) 2014-03-26 2015-03-23 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014064193A JP6256145B2 (ja) 2014-03-26 2014-03-26 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015185832A JP2015185832A (ja) 2015-10-22
JP2015185832A5 true JP2015185832A5 (enExample) 2016-03-03
JP6256145B2 JP6256145B2 (ja) 2018-01-10

Family

ID=54194680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014064193A Active JP6256145B2 (ja) 2014-03-26 2014-03-26 半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US9935074B2 (enExample)
JP (1) JP6256145B2 (enExample)
CN (1) CN106133906B (enExample)
DE (1) DE112015001398B4 (enExample)
WO (1) WO2015146130A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6595325B2 (ja) * 2015-12-04 2019-10-23 トヨタ自動車株式会社 半導体装置
JP6358296B2 (ja) * 2016-08-05 2018-07-18 トヨタ自動車株式会社 半導体モジュールの製造方法
JP6610568B2 (ja) * 2017-01-16 2019-11-27 株式会社デンソー 半導体装置
JP6512231B2 (ja) * 2017-01-27 2019-05-15 トヨタ自動車株式会社 半導体装置
JP6874467B2 (ja) * 2017-03-29 2021-05-19 株式会社デンソー 半導体装置とその製造方法
US10607857B2 (en) * 2017-12-06 2020-03-31 Indium Corporation Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger
JP7147187B2 (ja) * 2018-03-06 2022-10-05 株式会社デンソー 半導体装置
US10991670B2 (en) * 2018-09-28 2021-04-27 Semiconductor Components Industries, Llc Semiconductor device assemblies including spacer with embedded semiconductor die
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
JP7095632B2 (ja) * 2019-03-11 2022-07-05 株式会社デンソー 半導体装置
DE212021000239U1 (de) * 2020-10-14 2022-06-07 Rohm Co., Ltd. Halbleitermodul
DE112021002397T5 (de) 2020-10-14 2023-02-09 Rohm Co., Ltd. Halbleitermodul
JP7594950B2 (ja) * 2021-03-17 2024-12-05 ローム株式会社 半導体装置
JP7666175B2 (ja) * 2021-06-30 2025-04-22 住友電気工業株式会社 半導体装置およびパッケージ
JP2024080226A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置および回路基板

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4037589B2 (ja) 2000-03-07 2008-01-23 三菱電機株式会社 樹脂封止形電力用半導体装置
US6744121B2 (en) * 2001-04-19 2004-06-01 Walton Advanced Electronics Ltd Multi-chip package
TWI245399B (en) * 2004-03-11 2005-12-11 Advanced Semiconductor Eng Leadframe with die pad
JP4728606B2 (ja) * 2004-07-13 2011-07-20 株式会社デンソー 電子装置
JP2006308543A (ja) * 2005-03-31 2006-11-09 Fujitsu Media Device Kk 角速度センサ
JP4767115B2 (ja) * 2006-07-19 2011-09-07 パナソニック株式会社 半導体装置及びその製造方法
JP4888085B2 (ja) 2006-11-29 2012-02-29 株式会社デンソー 半導体装置の製造方法
JP2008218688A (ja) * 2007-03-05 2008-09-18 Denso Corp 半導体装置
JP5163069B2 (ja) 2007-11-20 2013-03-13 株式会社デンソー 半導体装置
US20100193920A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Semiconductor device, leadframe and method of encapsulating
JP5380376B2 (ja) * 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
US8497572B2 (en) 2010-07-05 2013-07-30 Denso Corporation Semiconductor module and method of manufacturing the same
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
JP5582040B2 (ja) 2011-01-12 2014-09-03 富士電機株式会社 半導体装置の製造方法、半導体装置およびイグナイタ装置
CN102157500A (zh) * 2011-03-04 2011-08-17 南通富士通微电子股份有限公司 半导体封装
US9129931B2 (en) * 2011-03-24 2015-09-08 Mitsubishi Electric Corporation Power semiconductor module and power unit device
JP5985877B2 (ja) * 2012-04-27 2016-09-06 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
US20140210062A1 (en) * 2013-01-28 2014-07-31 Texas Instruments Incorporated Leadframe-Based Semiconductor Package Having Terminals on Top and Bottom Surfaces

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