DE112015001398B4 - Halbleitervorrichtung und Verfahren zum Herstellen derselben - Google Patents
Halbleitervorrichtung und Verfahren zum Herstellen derselben Download PDFInfo
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- DE112015001398B4 DE112015001398B4 DE112015001398.9T DE112015001398T DE112015001398B4 DE 112015001398 B4 DE112015001398 B4 DE 112015001398B4 DE 112015001398 T DE112015001398 T DE 112015001398T DE 112015001398 B4 DE112015001398 B4 DE 112015001398B4
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
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- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-064193 | 2014-03-26 | ||
| JP2014064193A JP6256145B2 (ja) | 2014-03-26 | 2014-03-26 | 半導体装置及びその製造方法 |
| PCT/JP2015/001622 WO2015146130A1 (ja) | 2014-03-26 | 2015-03-23 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112015001398T5 DE112015001398T5 (de) | 2016-12-22 |
| DE112015001398B4 true DE112015001398B4 (de) | 2022-11-10 |
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ID=54194680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112015001398.9T Active DE112015001398B4 (de) | 2014-03-26 | 2015-03-23 | Halbleitervorrichtung und Verfahren zum Herstellen derselben |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9935074B2 (enExample) |
| JP (1) | JP6256145B2 (enExample) |
| CN (1) | CN106133906B (enExample) |
| DE (1) | DE112015001398B4 (enExample) |
| WO (1) | WO2015146130A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6595325B2 (ja) * | 2015-12-04 | 2019-10-23 | トヨタ自動車株式会社 | 半導体装置 |
| JP6358296B2 (ja) * | 2016-08-05 | 2018-07-18 | トヨタ自動車株式会社 | 半導体モジュールの製造方法 |
| JP6610568B2 (ja) * | 2017-01-16 | 2019-11-27 | 株式会社デンソー | 半導体装置 |
| JP6512231B2 (ja) * | 2017-01-27 | 2019-05-15 | トヨタ自動車株式会社 | 半導体装置 |
| JP6874467B2 (ja) * | 2017-03-29 | 2021-05-19 | 株式会社デンソー | 半導体装置とその製造方法 |
| US10607857B2 (en) * | 2017-12-06 | 2020-03-31 | Indium Corporation | Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger |
| JP7147187B2 (ja) * | 2018-03-06 | 2022-10-05 | 株式会社デンソー | 半導体装置 |
| US10991670B2 (en) * | 2018-09-28 | 2021-04-27 | Semiconductor Components Industries, Llc | Semiconductor device assemblies including spacer with embedded semiconductor die |
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2015
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- 2015-03-23 DE DE112015001398.9T patent/DE112015001398B4/de active Active
- 2015-03-23 CN CN201580015859.2A patent/CN106133906B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2015185832A (ja) | 2015-10-22 |
| US20170103962A1 (en) | 2017-04-13 |
| WO2015146130A1 (ja) | 2015-10-01 |
| DE112015001398T5 (de) | 2016-12-22 |
| CN106133906A (zh) | 2016-11-16 |
| CN106133906B (zh) | 2018-11-09 |
| US9935074B2 (en) | 2018-04-03 |
| JP6256145B2 (ja) | 2018-01-10 |
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