JP6256145B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP6256145B2
JP6256145B2 JP2014064193A JP2014064193A JP6256145B2 JP 6256145 B2 JP6256145 B2 JP 6256145B2 JP 2014064193 A JP2014064193 A JP 2014064193A JP 2014064193 A JP2014064193 A JP 2014064193A JP 6256145 B2 JP6256145 B2 JP 6256145B2
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heat sink
semiconductor chip
passive component
island
electrode
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JP2015185832A (ja
JP2015185832A5 (enExample
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翔一朗 大前
翔一朗 大前
岩渕　明
明 岩渕
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Denso Corp
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Denso Corp
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Priority to JP2014064193A priority Critical patent/JP6256145B2/ja
Priority to DE112015001398.9T priority patent/DE112015001398B4/de
Priority to CN201580015859.2A priority patent/CN106133906B/zh
Priority to PCT/JP2015/001622 priority patent/WO2015146130A1/ja
Priority to US15/128,126 priority patent/US9935074B2/en
Publication of JP2015185832A publication Critical patent/JP2015185832A/ja
Publication of JP2015185832A5 publication Critical patent/JP2015185832A5/ja
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    • H10W90/759—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device

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JP6595325B2 (ja) * 2015-12-04 2019-10-23 トヨタ自動車株式会社 半導体装置
JP6358296B2 (ja) * 2016-08-05 2018-07-18 トヨタ自動車株式会社 半導体モジュールの製造方法
JP6610568B2 (ja) * 2017-01-16 2019-11-27 株式会社デンソー 半導体装置
JP6512231B2 (ja) * 2017-01-27 2019-05-15 トヨタ自動車株式会社 半導体装置
JP6874467B2 (ja) * 2017-03-29 2021-05-19 株式会社デンソー 半導体装置とその製造方法
US10607857B2 (en) 2017-12-06 2020-03-31 Indium Corporation Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger
JP7147187B2 (ja) * 2018-03-06 2022-10-05 株式会社デンソー 半導体装置
US10991670B2 (en) 2018-09-28 2021-04-27 Semiconductor Components Industries, Llc Semiconductor device assemblies including spacer with embedded semiconductor die
JP7109347B2 (ja) * 2018-12-03 2022-07-29 三菱電機株式会社 半導体装置および電力変換装置
JP7095632B2 (ja) * 2019-03-11 2022-07-05 株式会社デンソー 半導体装置
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JP7594950B2 (ja) * 2021-03-17 2024-12-05 ローム株式会社 半導体装置
JP7666175B2 (ja) * 2021-06-30 2025-04-22 住友電気工業株式会社 半導体装置およびパッケージ
JP2024080226A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置および回路基板

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TWI245399B (en) * 2004-03-11 2005-12-11 Advanced Semiconductor Eng Leadframe with die pad
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JP2006308543A (ja) * 2005-03-31 2006-11-09 Fujitsu Media Device Kk 角速度センサ
JP4767115B2 (ja) * 2006-07-19 2011-09-07 パナソニック株式会社 半導体装置及びその製造方法
JP4888085B2 (ja) 2006-11-29 2012-02-29 株式会社デンソー 半導体装置の製造方法
JP2008218688A (ja) * 2007-03-05 2008-09-18 Denso Corp 半導体装置
JP5163069B2 (ja) 2007-11-20 2013-03-13 株式会社デンソー 半導体装置
US20100193920A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Semiconductor device, leadframe and method of encapsulating
JP5380376B2 (ja) * 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
US8497572B2 (en) 2010-07-05 2013-07-30 Denso Corporation Semiconductor module and method of manufacturing the same
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
JP5582040B2 (ja) 2011-01-12 2014-09-03 富士電機株式会社 半導体装置の製造方法、半導体装置およびイグナイタ装置
CN102157500A (zh) * 2011-03-04 2011-08-17 南通富士通微电子股份有限公司 半导体封装
EP2690658B1 (en) * 2011-03-24 2019-11-13 Mitsubishi Electric Corporation Power semiconductor module and power unit device
JP5985877B2 (ja) * 2012-04-27 2016-09-06 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
US20140210062A1 (en) * 2013-01-28 2014-07-31 Texas Instruments Incorporated Leadframe-Based Semiconductor Package Having Terminals on Top and Bottom Surfaces

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DE112015001398B4 (de) 2022-11-10
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