JP2008294407A5 - - Google Patents

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Publication number
JP2008294407A5
JP2008294407A5 JP2008073074A JP2008073074A JP2008294407A5 JP 2008294407 A5 JP2008294407 A5 JP 2008294407A5 JP 2008073074 A JP2008073074 A JP 2008073074A JP 2008073074 A JP2008073074 A JP 2008073074A JP 2008294407 A5 JP2008294407 A5 JP 2008294407A5
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JP
Japan
Prior art keywords
insulating film
substrate
semiconductor film
base substrate
bond substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008073074A
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English (en)
Japanese (ja)
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JP2008294407A (ja
JP5348916B2 (ja
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Priority to JP2008073074A priority Critical patent/JP5348916B2/ja
Priority claimed from JP2008073074A external-priority patent/JP5348916B2/ja
Publication of JP2008294407A publication Critical patent/JP2008294407A/ja
Publication of JP2008294407A5 publication Critical patent/JP2008294407A5/ja
Application granted granted Critical
Publication of JP5348916B2 publication Critical patent/JP5348916B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008073074A 2007-04-25 2008-03-21 半導体装置 Expired - Fee Related JP5348916B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008073074A JP5348916B2 (ja) 2007-04-25 2008-03-21 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007114922 2007-04-25
JP2007114922 2007-04-25
JP2008073074A JP5348916B2 (ja) 2007-04-25 2008-03-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2008294407A JP2008294407A (ja) 2008-12-04
JP2008294407A5 true JP2008294407A5 (enExample) 2011-03-31
JP5348916B2 JP5348916B2 (ja) 2013-11-20

Family

ID=39591468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008073074A Expired - Fee Related JP5348916B2 (ja) 2007-04-25 2008-03-21 半導体装置

Country Status (6)

Country Link
US (1) US8212319B2 (enExample)
EP (2) EP1986226A1 (enExample)
JP (1) JP5348916B2 (enExample)
KR (1) KR101447936B1 (enExample)
CN (1) CN101295734B (enExample)
TW (1) TWI442565B (enExample)

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JP5350655B2 (ja) * 2007-04-27 2013-11-27 株式会社半導体エネルギー研究所 半導体装置
JP5503876B2 (ja) * 2008-01-24 2014-05-28 株式会社半導体エネルギー研究所 半導体基板の製造方法
US20110084356A1 (en) * 2008-06-02 2011-04-14 Nxp B.V. Local buried layer forming method and semiconductor device having such a layer
JP5700621B2 (ja) * 2009-04-24 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5917035B2 (ja) * 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 半導体装置
JP5722571B2 (ja) * 2010-08-10 2015-05-20 猛英 白土 半導体装置及びその製造方法
JP5650576B2 (ja) * 2011-03-31 2015-01-07 猛英 白土 半導体装置及びその製造方法
JP5666961B2 (ja) * 2011-03-31 2015-02-12 猛英 白土 半導体記憶装置
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US20130050166A1 (en) * 2011-08-24 2013-02-28 Qualcomm Mems Technologies, Inc. Silicide gap thin film transistor
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CN104681555B (zh) * 2013-11-28 2017-11-10 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法和电子装置
US9515181B2 (en) * 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
CN105226004A (zh) * 2015-10-19 2016-01-06 上海华力微电子有限公司 具有应力集中结构的soi晶圆的制造方法
CN105428358A (zh) * 2015-12-29 2016-03-23 中国科学院上海微系统与信息技术研究所 一种基于图形化绝缘体上硅衬底的cmos器件结构及制备方法
CN105633001A (zh) * 2015-12-29 2016-06-01 中国科学院上海微系统与信息技术研究所 一种绝缘体岛上硅衬底材料及其制备方法
CN108682649B (zh) * 2018-04-17 2021-02-05 中芯集成电路（宁波）有限公司 Soi衬底、半导体器件及其形成方法
CN111435637A (zh) * 2019-01-11 2020-07-21 中国科学院上海微系统与信息技术研究所 图形化结构的soi衬底的制备方法
JP7274935B2 (ja) * 2019-05-24 2023-05-17 株式会社ジャパンディスプレイ 表示装置
CN111952185B (zh) * 2020-08-21 2024-03-29 中国科学院上海微系统与信息技术研究所 可降低对准难度的soi器件及其制备方法

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