JP2014204047A5 - - Google Patents
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- JP2014204047A5 JP2014204047A5 JP2013080836A JP2013080836A JP2014204047A5 JP 2014204047 A5 JP2014204047 A5 JP 2014204047A5 JP 2013080836 A JP2013080836 A JP 2013080836A JP 2013080836 A JP2013080836 A JP 2013080836A JP 2014204047 A5 JP2014204047 A5 JP 2014204047A5
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013080836A JP6278608B2 (ja) | 2013-04-08 | 2013-04-08 | 半導体装置およびその製造方法 |
| US14/224,288 US9508768B2 (en) | 2013-04-08 | 2014-03-25 | Solid-state image sensor with element isolation regions comprising gaps having reduced variations |
| US15/267,626 US20170005123A1 (en) | 2013-04-08 | 2016-09-16 | Semiconductor device and method of manufacturing the same |
| US16/810,054 US11664402B2 (en) | 2013-04-08 | 2020-03-05 | Semiconductor device having a trench and camera with semiconductor device |
| US18/299,878 US12159891B2 (en) | 2013-04-08 | 2023-04-13 | Semiconductor device with microlens layer and camera including the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013080836A JP6278608B2 (ja) | 2013-04-08 | 2013-04-08 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014204047A JP2014204047A (ja) | 2014-10-27 |
| JP2014204047A5 true JP2014204047A5 (enExample) | 2016-05-26 |
| JP6278608B2 JP6278608B2 (ja) | 2018-02-14 |
Family
ID=51653868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013080836A Active JP6278608B2 (ja) | 2013-04-08 | 2013-04-08 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (4) | US9508768B2 (enExample) |
| JP (1) | JP6278608B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6192379B2 (ja) * | 2013-06-18 | 2017-09-06 | キヤノン株式会社 | 固体撮像装置 |
| TW201539736A (zh) * | 2014-03-19 | 2015-10-16 | 3M Innovative Properties Co | 用於藉白光成色之 oled 裝置的奈米結構 |
| JP6598504B2 (ja) * | 2015-05-07 | 2019-10-30 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP6671864B2 (ja) * | 2015-05-18 | 2020-03-25 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
| JP6700811B2 (ja) | 2016-01-26 | 2020-05-27 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6789653B2 (ja) | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP6808348B2 (ja) | 2016-04-28 | 2021-01-06 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP7490543B2 (ja) * | 2016-04-28 | 2024-05-27 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP7084735B2 (ja) * | 2018-01-31 | 2022-06-15 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP7250427B2 (ja) * | 2018-02-09 | 2023-04-03 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
| KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
| KR102658571B1 (ko) * | 2019-06-11 | 2024-04-19 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
| JP2020102656A (ja) * | 2020-04-06 | 2020-07-02 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7059336B2 (ja) * | 2020-11-04 | 2022-04-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP2023083369A (ja) * | 2020-12-09 | 2023-06-15 | キヤノン株式会社 | 光電変換装置およびカメラ |
| KR102885926B1 (ko) | 2021-01-12 | 2025-11-12 | 삼성전자주식회사 | 이미지 센서 |
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| JPS6021540A (ja) * | 1983-07-15 | 1985-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPH02214159A (ja) | 1989-02-14 | 1990-08-27 | Mitsubishi Electric Corp | 赤外線撮像装置 |
| JPH1117002A (ja) * | 1997-06-24 | 1999-01-22 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2004228407A (ja) | 2003-01-24 | 2004-08-12 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法 |
| JP2005123449A (ja) | 2003-10-17 | 2005-05-12 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| US7078779B2 (en) * | 2004-10-15 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd | Enhanced color image sensor device and method of making the same |
| JP2006344644A (ja) | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびカメラならびに固体撮像装置の製造方法 |
| US20070235783A9 (en) | 2005-07-19 | 2007-10-11 | Micron Technology, Inc. | Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions |
| KR100809323B1 (ko) * | 2006-01-31 | 2008-03-05 | 삼성전자주식회사 | 크로스토크가 감소하고 감도가 증가한 이미지 센서 |
| JP2007227761A (ja) | 2006-02-24 | 2007-09-06 | Matsushita Electric Ind Co Ltd | 固体撮像装置用素子 |
| DE102006054334B3 (de) * | 2006-11-17 | 2008-07-10 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Halbleiterbauelementes mit Isolationsgraben und Kontaktgraben |
| JP2009147211A (ja) | 2007-12-17 | 2009-07-02 | Fujifilm Corp | 半導体装置の製造方法、半導体装置、及び、固体撮像装置 |
| JP4599417B2 (ja) | 2008-01-31 | 2010-12-15 | 富士フイルム株式会社 | 裏面照射型固体撮像素子 |
| US7800192B2 (en) * | 2008-02-08 | 2010-09-21 | Omnivision Technologies, Inc. | Backside illuminated image sensor having deep light reflective trenches |
| JP2010206173A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
| JP2011023470A (ja) | 2009-07-14 | 2011-02-03 | Toshiba Corp | Ｃｍｏｓイメージセンサ、及びその製造方法 |
| JP4977181B2 (ja) | 2009-08-10 | 2012-07-18 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
| JP2011119558A (ja) * | 2009-12-07 | 2011-06-16 | Panasonic Corp | 固体撮像装置 |
| KR20110077116A (ko) * | 2009-12-30 | 2011-07-07 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| JP5669251B2 (ja) | 2010-01-20 | 2015-02-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US8587081B2 (en) * | 2010-04-28 | 2013-11-19 | Calvin Yi-Ping Chao | Back side illuminated image sensor with back side pixel substrate bias |
| JP5715351B2 (ja) | 2010-06-30 | 2015-05-07 | キヤノン株式会社 | 半導体装置およびその製造方法、ならびに固体撮像装置 |
| JP5682174B2 (ja) * | 2010-08-09 | 2015-03-11 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器 |
| FR2969385A1 (fr) * | 2010-12-21 | 2012-06-22 | St Microelectronics Crolles 2 | Capteur d'images a taux d'intermodulation réduit |
| JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| JP5606961B2 (ja) * | 2011-02-25 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2012028790A (ja) * | 2011-08-19 | 2012-02-09 | Renesas Electronics Corp | 半導体装置 |
| US8779539B2 (en) * | 2011-09-21 | 2014-07-15 | United Microelectronics Corporation | Image sensor and method for fabricating the same |
| JP5696081B2 (ja) * | 2012-03-23 | 2015-04-08 | 株式会社東芝 | 固体撮像装置 |
| US8941204B2 (en) * | 2012-04-27 | 2015-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing cross talk in image sensors |
| KR101968197B1 (ko) * | 2012-05-18 | 2019-04-12 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
| US8889461B2 (en) * | 2012-05-29 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | CIS image sensors with epitaxy layers and methods for forming the same |
| JP2014011304A (ja) * | 2012-06-29 | 2014-01-20 | Toshiba Corp | 固体撮像装置 |
| US10009552B2 (en) * | 2012-09-20 | 2018-06-26 | Semiconductor Components Industries, Llc | Imaging systems with front side illuminated near infrared imaging pixels |
| KR102083402B1 (ko) * | 2013-02-25 | 2020-03-02 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
| KR102209097B1 (ko) * | 2014-02-27 | 2021-01-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
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2013
- 2013-04-08 JP JP2013080836A patent/JP6278608B2/ja active Active
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2014
- 2014-03-25 US US14/224,288 patent/US9508768B2/en active Active
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2016
- 2016-09-16 US US15/267,626 patent/US20170005123A1/en not_active Abandoned
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2020
- 2020-03-05 US US16/810,054 patent/US11664402B2/en active Active
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2023
- 2023-04-13 US US18/299,878 patent/US12159891B2/en active Active