JP2012043955A5 - - Google Patents

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Publication number
JP2012043955A5
JP2012043955A5 JP2010183398A JP2010183398A JP2012043955A5 JP 2012043955 A5 JP2012043955 A5 JP 2012043955A5 JP 2010183398 A JP2010183398 A JP 2010183398A JP 2010183398 A JP2010183398 A JP 2010183398A JP 2012043955 A5 JP2012043955 A5 JP 2012043955A5
Authority
JP
Japan
Prior art keywords
semiconductor region
region
conductivity type
semiconductor
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2010183398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012043955A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010183398A priority Critical patent/JP2012043955A/ja
Priority claimed from JP2010183398A external-priority patent/JP2012043955A/ja
Priority to CN2011100519452A priority patent/CN102376764A/zh
Priority to EP11159170A priority patent/EP2421047A1/en
Priority to US13/053,452 priority patent/US20120043606A1/en
Publication of JP2012043955A publication Critical patent/JP2012043955A/ja
Publication of JP2012043955A5 publication Critical patent/JP2012043955A5/ja
Abandoned legal-status Critical Current

Links

JP2010183398A 2010-08-18 2010-08-18 半導体装置及びその製造方法 Abandoned JP2012043955A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010183398A JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法
CN2011100519452A CN102376764A (zh) 2010-08-18 2011-03-03 半导体装置及其制造方法
EP11159170A EP2421047A1 (en) 2010-08-18 2011-03-22 Semiconductor device and method for manufacturing same
US13/053,452 US20120043606A1 (en) 2010-08-18 2011-03-22 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010183398A JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2012043955A JP2012043955A (ja) 2012-03-01
JP2012043955A5 true JP2012043955A5 (enExample) 2012-10-11

Family

ID=44262919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010183398A Abandoned JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US20120043606A1 (enExample)
EP (1) EP2421047A1 (enExample)
JP (1) JP2012043955A (enExample)
CN (1) CN102376764A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177914A1 (ja) * 2014-05-23 2015-11-26 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
DE112015005397B4 (de) * 2015-01-19 2022-06-09 Hitachi, Ltd. Halbleitervorrichtung, Verfahren zum Herstellen derselben, Leistungsumsetzer, Dreiphasenmotorsystem, Kraftfahrzeug und Eisenbahnfahrzeug
DE112015004751B4 (de) 2015-02-12 2020-07-09 Hitachi, Ltd. Halbleitervorrichtung und verfahren zu deren herstellung, leistungsumsetzervorrichtung, dreiphasenmotorsystem, kraftfahrzeug und eisenbahnwagen
US10903163B2 (en) 2015-10-19 2021-01-26 Vishay-Siliconix, LLC Trench MOSFET with self-aligned body contact with spacer
JP7075876B2 (ja) 2018-12-25 2022-05-26 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両
US11961903B2 (en) * 2020-05-26 2024-04-16 Hyundai Mobis Co., Ltd. Power semiconductor device and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
JP2002231945A (ja) * 2001-02-06 2002-08-16 Denso Corp 半導体装置の製造方法
JP3534084B2 (ja) * 2001-04-18 2004-06-07 株式会社デンソー 半導体装置およびその製造方法
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP2007221024A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 半導体装置
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate

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