JP2012043955A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2012043955A
JP2012043955A JP2010183398A JP2010183398A JP2012043955A JP 2012043955 A JP2012043955 A JP 2012043955A JP 2010183398 A JP2010183398 A JP 2010183398A JP 2010183398 A JP2010183398 A JP 2010183398A JP 2012043955 A JP2012043955 A JP 2012043955A
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JP
Japan
Prior art keywords
semiconductor region
region
semiconductor
conductivity type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2010183398A
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English (en)
Japanese (ja)
Other versions
JP2012043955A5 (enExample
Inventor
Shingo Sato
慎吾 佐藤
Hitoshi Shinohara
仁 篠原
Keiko Kawamura
圭子 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010183398A priority Critical patent/JP2012043955A/ja
Priority to CN2011100519452A priority patent/CN102376764A/zh
Priority to EP11159170A priority patent/EP2421047A1/en
Priority to US13/053,452 priority patent/US20120043606A1/en
Publication of JP2012043955A publication Critical patent/JP2012043955A/ja
Publication of JP2012043955A5 publication Critical patent/JP2012043955A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010183398A 2010-08-18 2010-08-18 半導体装置及びその製造方法 Abandoned JP2012043955A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010183398A JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法
CN2011100519452A CN102376764A (zh) 2010-08-18 2011-03-03 半导体装置及其制造方法
EP11159170A EP2421047A1 (en) 2010-08-18 2011-03-22 Semiconductor device and method for manufacturing same
US13/053,452 US20120043606A1 (en) 2010-08-18 2011-03-22 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010183398A JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2012043955A true JP2012043955A (ja) 2012-03-01
JP2012043955A5 JP2012043955A5 (enExample) 2012-10-11

Family

ID=44262919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010183398A Abandoned JP2012043955A (ja) 2010-08-18 2010-08-18 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US20120043606A1 (enExample)
EP (1) EP2421047A1 (enExample)
JP (1) JP2012043955A (enExample)
CN (1) CN102376764A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177914A1 (ja) * 2014-05-23 2015-11-26 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
WO2016116998A1 (ja) * 2015-01-19 2016-07-28 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車、並びに鉄道車両
JPWO2016129068A1 (ja) * 2015-02-12 2017-06-22 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車並びに鉄道車両
US11978794B2 (en) 2018-12-25 2024-05-07 Hitachi, Ltd. Silicon carbide semiconductor device, power conversion device, three-phase motor system, automobile, and railway vehicle

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
US10903163B2 (en) 2015-10-19 2021-01-26 Vishay-Siliconix, LLC Trench MOSFET with self-aligned body contact with spacer
US11961903B2 (en) * 2020-05-26 2024-04-16 Hyundai Mobis Co., Ltd. Power semiconductor device and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
JP2002231945A (ja) * 2001-02-06 2002-08-16 Denso Corp 半導体装置の製造方法
JP3534084B2 (ja) * 2001-04-18 2004-06-07 株式会社デンソー 半導体装置およびその製造方法
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP2007221024A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 半導体装置
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177914A1 (ja) * 2014-05-23 2015-11-26 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
JPWO2015177914A1 (ja) * 2014-05-23 2017-04-20 株式会社日立製作所 半導体装置、半導体装置の製造方法、電力変換装置、３相モータシステム、自動車、および鉄道車両
WO2016116998A1 (ja) * 2015-01-19 2016-07-28 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車、並びに鉄道車両
US9960259B2 (en) 2015-01-19 2018-05-01 Hitachi, Ltd. Semiconductor device, method for manufacturing same, power conversion device, three-phase motor system, automobile, and railway carriage
JPWO2016129068A1 (ja) * 2015-02-12 2017-06-22 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車並びに鉄道車両
US10290704B2 (en) 2015-02-12 2019-05-14 Hitachi, Ltd. Semiconductor device and method for manufacturing same, power conversion device, three-phase motor system, automobile, and railway carriage
DE112015004751B4 (de) 2015-02-12 2020-07-09 Hitachi, Ltd. Halbleitervorrichtung und verfahren zu deren herstellung, leistungsumsetzervorrichtung, dreiphasenmotorsystem, kraftfahrzeug und eisenbahnwagen
US11978794B2 (en) 2018-12-25 2024-05-07 Hitachi, Ltd. Silicon carbide semiconductor device, power conversion device, three-phase motor system, automobile, and railway vehicle

Also Published As

Publication number Publication date
CN102376764A (zh) 2012-03-14
US20120043606A1 (en) 2012-02-23
EP2421047A1 (en) 2012-02-22

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