JP2014212191A5 - - Google Patents

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Publication number
JP2014212191A5
JP2014212191A5 JP2013087211A JP2013087211A JP2014212191A5 JP 2014212191 A5 JP2014212191 A5 JP 2014212191A5 JP 2013087211 A JP2013087211 A JP 2013087211A JP 2013087211 A JP2013087211 A JP 2013087211A JP 2014212191 A5 JP2014212191 A5 JP 2014212191A5
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JP
Japan
Prior art keywords
insulating layer
electrode
semiconductor device
disposed
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013087211A
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English (en)
Japanese (ja)
Other versions
JP2014212191A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013087211A priority Critical patent/JP2014212191A/ja
Priority claimed from JP2013087211A external-priority patent/JP2014212191A/ja
Priority to US14/254,427 priority patent/US9299850B2/en
Publication of JP2014212191A publication Critical patent/JP2014212191A/ja
Priority to US15/046,156 priority patent/US9543327B2/en
Publication of JP2014212191A5 publication Critical patent/JP2014212191A5/ja
Priority to US15/363,713 priority patent/US9865620B2/en
Withdrawn legal-status Critical Current

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JP2013087211A 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器 Withdrawn JP2014212191A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013087211A JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
US14/254,427 US9299850B2 (en) 2013-04-18 2014-04-16 Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
US15/046,156 US9543327B2 (en) 2013-04-18 2016-02-17 Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
US15/363,713 US9865620B2 (en) 2013-04-18 2016-11-29 Semiconductor device having semiconductor layer that includes channel region formed into concave shape, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013087211A JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017218846A Division JP2018050069A (ja) 2017-11-14 2017-11-14 半導体装置、電気光学装置、及び電子機器

Publications (2)

Publication Number Publication Date
JP2014212191A JP2014212191A (ja) 2014-11-13
JP2014212191A5 true JP2014212191A5 (enExample) 2016-05-19

Family

ID=51728351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013087211A Withdrawn JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

Country Status (2)

Country Link
US (3) US9299850B2 (enExample)
JP (1) JP2014212191A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9363451B2 (en) * 2011-12-19 2016-06-07 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP2014212191A (ja) * 2013-04-18 2014-11-13 セイコーエプソン株式会社 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
KR102177214B1 (ko) * 2014-03-17 2020-11-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105655407A (zh) * 2016-03-11 2016-06-08 京东方科技集团股份有限公司 多晶硅薄膜晶体管及其制备方法、阵列基板、显示装置
JP6536634B2 (ja) * 2017-07-28 2019-07-03 セイコーエプソン株式会社 電気光学装置および電子機器
TWI646691B (zh) * 2017-11-22 2019-01-01 友達光電股份有限公司 主動元件基板及其製造方法
CN109300990B (zh) * 2018-09-29 2022-04-22 合肥鑫晟光电科技有限公司 薄膜晶体管及制备方法、阵列基板、显示面板和显示装置
JP7434996B2 (ja) * 2020-02-14 2024-02-21 セイコーエプソン株式会社 電気光学装置、および電子機器
CN114335183B (zh) * 2021-12-17 2024-12-13 Tcl华星光电技术有限公司 阵列基板及显示面板
KR20250039363A (ko) * 2022-07-20 2025-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TW202430996A (zh) * 2022-09-09 2024-08-01 日商半導體能源研究所股份有限公司 顯示裝置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
KR100189966B1 (ko) * 1995-06-13 1999-06-01 윤종용 소이 구조의 모스 트랜지스터 및 그 제조방법
JP3645755B2 (ja) 1999-09-17 2005-05-11 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP2001318625A (ja) * 2000-05-08 2001-11-16 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法及び電子機器
JP3849434B2 (ja) * 2001-02-14 2006-11-22 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
US7419858B2 (en) 2006-08-31 2008-09-02 Sharp Laboratories Of America, Inc. Recessed-gate thin-film transistor with self-aligned lightly doped drain
JP2009122253A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器
JP5488136B2 (ja) 2010-04-05 2014-05-14 セイコーエプソン株式会社 電気光学装置及び電子機器並びにトランジスター
JP2014212191A (ja) * 2013-04-18 2014-11-13 セイコーエプソン株式会社 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

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