JP2014212191A - 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器 - Google Patents

半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器 Download PDF

Info

Publication number
JP2014212191A
JP2014212191A JP2013087211A JP2013087211A JP2014212191A JP 2014212191 A JP2014212191 A JP 2014212191A JP 2013087211 A JP2013087211 A JP 2013087211A JP 2013087211 A JP2013087211 A JP 2013087211A JP 2014212191 A JP2014212191 A JP 2014212191A
Authority
JP
Japan
Prior art keywords
insulating layer
electrode
semiconductor device
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013087211A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014212191A5 (enExample
Inventor
雅嗣 中川
Masatsugu Nakagawa
雅嗣 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2013087211A priority Critical patent/JP2014212191A/ja
Priority to US14/254,427 priority patent/US9299850B2/en
Publication of JP2014212191A publication Critical patent/JP2014212191A/ja
Priority to US15/046,156 priority patent/US9543327B2/en
Publication of JP2014212191A5 publication Critical patent/JP2014212191A5/ja
Priority to US15/363,713 priority patent/US9865620B2/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2013087211A 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器 Withdrawn JP2014212191A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013087211A JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
US14/254,427 US9299850B2 (en) 2013-04-18 2014-04-16 Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
US15/046,156 US9543327B2 (en) 2013-04-18 2016-02-17 Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
US15/363,713 US9865620B2 (en) 2013-04-18 2016-11-29 Semiconductor device having semiconductor layer that includes channel region formed into concave shape, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013087211A JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017218846A Division JP2018050069A (ja) 2017-11-14 2017-11-14 半導体装置、電気光学装置、及び電子機器

Publications (2)

Publication Number Publication Date
JP2014212191A true JP2014212191A (ja) 2014-11-13
JP2014212191A5 JP2014212191A5 (enExample) 2016-05-19

Family

ID=51728351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013087211A Withdrawn JP2014212191A (ja) 2013-04-18 2013-04-18 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

Country Status (2)

Country Link
US (3) US9299850B2 (enExample)
JP (1) JP2014212191A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021128265A (ja) * 2020-02-14 2021-09-02 セイコーエプソン株式会社 電気光学装置、および電子機器
JP2022141892A (ja) * 2015-01-26 2022-09-29 株式会社半導体エネルギー研究所 半導体装置
WO2024018313A1 (ja) * 2022-07-20 2024-01-25 株式会社半導体エネルギー研究所 表示装置
WO2024052784A1 (ja) * 2022-09-09 2024-03-14 株式会社半導体エネルギー研究所 表示装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9363451B2 (en) * 2011-12-19 2016-06-07 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP2014212191A (ja) * 2013-04-18 2014-11-13 セイコーエプソン株式会社 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
KR102177214B1 (ko) * 2014-03-17 2020-11-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
CN105655407A (zh) * 2016-03-11 2016-06-08 京东方科技集团股份有限公司 多晶硅薄膜晶体管及其制备方法、阵列基板、显示装置
JP6536634B2 (ja) * 2017-07-28 2019-07-03 セイコーエプソン株式会社 電気光学装置および電子機器
TWI646691B (zh) * 2017-11-22 2019-01-01 友達光電股份有限公司 主動元件基板及其製造方法
CN109300990B (zh) * 2018-09-29 2022-04-22 合肥鑫晟光电科技有限公司 薄膜晶体管及制备方法、阵列基板、显示面板和显示装置
CN114335183B (zh) * 2021-12-17 2024-12-13 Tcl华星光电技术有限公司 阵列基板及显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085699A (ja) * 1999-09-17 2001-03-30 Nec Corp 薄膜トランジスタおよびその製造方法
JP2001318625A (ja) * 2000-05-08 2001-11-16 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法及び電子機器
JP2002244155A (ja) * 2001-02-14 2002-08-28 Seiko Epson Corp 電気光学装置及び投射型表示装置
JP2008060524A (ja) * 2006-08-31 2008-03-13 Sharp Corp 自己整合型の低不純物濃度ドレインを備えたリセスゲート薄膜トランジスタ、および当該トランジスタの形成方法
JP2009122253A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
KR100189966B1 (ko) * 1995-06-13 1999-06-01 윤종용 소이 구조의 모스 트랜지스터 및 그 제조방법
JP5488136B2 (ja) 2010-04-05 2014-05-14 セイコーエプソン株式会社 電気光学装置及び電子機器並びにトランジスター
JP2014212191A (ja) * 2013-04-18 2014-11-13 セイコーエプソン株式会社 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085699A (ja) * 1999-09-17 2001-03-30 Nec Corp 薄膜トランジスタおよびその製造方法
JP2001318625A (ja) * 2000-05-08 2001-11-16 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法及び電子機器
JP2002244155A (ja) * 2001-02-14 2002-08-28 Seiko Epson Corp 電気光学装置及び投射型表示装置
JP2008060524A (ja) * 2006-08-31 2008-03-13 Sharp Corp 自己整合型の低不純物濃度ドレインを備えたリセスゲート薄膜トランジスタ、および当該トランジスタの形成方法
JP2009122253A (ja) * 2007-11-13 2009-06-04 Seiko Epson Corp 電気光学装置及び電子機器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022141892A (ja) * 2015-01-26 2022-09-29 株式会社半導体エネルギー研究所 半導体装置
JP7471349B2 (ja) 2015-01-26 2024-04-19 株式会社半導体エネルギー研究所 半導体装置
US12074224B2 (en) 2015-01-26 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2021128265A (ja) * 2020-02-14 2021-09-02 セイコーエプソン株式会社 電気光学装置、および電子機器
JP7434996B2 (ja) 2020-02-14 2024-02-21 セイコーエプソン株式会社 電気光学装置、および電子機器
WO2024018313A1 (ja) * 2022-07-20 2024-01-25 株式会社半導体エネルギー研究所 表示装置
WO2024052784A1 (ja) * 2022-09-09 2024-03-14 株式会社半導体エネルギー研究所 表示装置

Also Published As

Publication number Publication date
US20170077148A1 (en) 2017-03-16
US20140312352A1 (en) 2014-10-23
US9865620B2 (en) 2018-01-09
US9299850B2 (en) 2016-03-29
US9543327B2 (en) 2017-01-10
US20160163740A1 (en) 2016-06-09

Similar Documents

Publication Publication Date Title
JP2014212191A (ja) 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
JP3197989U (ja) 電気光学装置、及び電子機器
JP3197990U (ja) 電気光学装置、及び電子機器
CN104937655B (zh) 电光装置、其制造方法以及电子设备
JP2013235128A (ja) 電気光学装置の製造方法、及び電気光学装置用基板
US11372292B2 (en) Electro-optical device and electronic device
JP5919890B2 (ja) 電気光学装置、及び電子機器
JP2013182144A (ja) 電気光学装置、及び電子機器
US20140347618A1 (en) Liquid crystal device, liquid crystal device manufacturing method, and electronic apparatus
JP2014142390A (ja) 電気光学装置、電気光学装置の製造方法、及び電子機器
JP6303283B2 (ja) 半導体装置、電気光学装置、半導体装置の製造方法、及び電子機器
JP7409236B2 (ja) 電気光学装置、及び電子機器
JP6205836B2 (ja) 液晶装置、及び電子機器
JP2015055816A (ja) 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置、及び電子機器
JP7435087B2 (ja) 電気光学装置、及び電子機器
JP2018050069A (ja) 半導体装置、電気光学装置、及び電子機器
US10890799B2 (en) Liquid crystal apparatus and electronic device
JP2018056260A (ja) 半導体装置および電気光学装置
JP6236827B2 (ja) 電気光学装置、電気光学装置の製造方法、及び電子機器
JP2017040847A (ja) 液晶装置、液晶装置の製造方法、及び電子機器
JP2014216402A (ja) 半導体装置、電気光学装置、半導体装置の製造方法、電気光学装置の製造方法、及び電子機器
JP2014119683A (ja) 液晶装置、及び電子機器
JP2022015457A (ja) 電気光学装置、電子機器、及び電気光学装置の製造方法
JP2014026142A (ja) 液晶装置の製造方法、液晶装置、及び電子機器
JP2022007339A (ja) 電気光学装置、及び電子機器

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160323

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160323

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20160617

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20160624

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170413

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170919

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20171115