JP6278608B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP6278608B2
JP6278608B2 JP2013080836A JP2013080836A JP6278608B2 JP 6278608 B2 JP6278608 B2 JP 6278608B2 JP 2013080836 A JP2013080836 A JP 2013080836A JP 2013080836 A JP2013080836 A JP 2013080836A JP 6278608 B2 JP6278608 B2 JP 6278608B2
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semiconductor
semiconductor substrate
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region
opening
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JP2014204047A (ja
JP2014204047A5 (enExample
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和夫 國米
和夫 國米
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Canon Inc
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Canon Inc
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Priority to JP2013080836A priority Critical patent/JP6278608B2/ja
Priority to US14/224,288 priority patent/US9508768B2/en
Publication of JP2014204047A publication Critical patent/JP2014204047A/ja
Publication of JP2014204047A5 publication Critical patent/JP2014204047A5/ja
Priority to US15/267,626 priority patent/US20170005123A1/en
Application granted granted Critical
Publication of JP6278608B2 publication Critical patent/JP6278608B2/ja
Priority to US16/810,054 priority patent/US11664402B2/en
Priority to US18/299,878 priority patent/US12159891B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
JP2013080836A 2013-04-08 2013-04-08 半導体装置およびその製造方法 Active JP6278608B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013080836A JP6278608B2 (ja) 2013-04-08 2013-04-08 半導体装置およびその製造方法
US14/224,288 US9508768B2 (en) 2013-04-08 2014-03-25 Solid-state image sensor with element isolation regions comprising gaps having reduced variations
US15/267,626 US20170005123A1 (en) 2013-04-08 2016-09-16 Semiconductor device and method of manufacturing the same
US16/810,054 US11664402B2 (en) 2013-04-08 2020-03-05 Semiconductor device having a trench and camera with semiconductor device
US18/299,878 US12159891B2 (en) 2013-04-08 2023-04-13 Semiconductor device with microlens layer and camera including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013080836A JP6278608B2 (ja) 2013-04-08 2013-04-08 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2014204047A JP2014204047A (ja) 2014-10-27
JP2014204047A5 JP2014204047A5 (enExample) 2016-05-26
JP6278608B2 true JP6278608B2 (ja) 2018-02-14

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JP2013080836A Active JP6278608B2 (ja) 2013-04-08 2013-04-08 半導体装置およびその製造方法

Country Status (2)

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US (4) US9508768B2 (enExample)
JP (1) JP6278608B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6192379B2 (ja) * 2013-06-18 2017-09-06 キヤノン株式会社 固体撮像装置
TW201539736A (zh) * 2014-03-19 2015-10-16 3M Innovative Properties Co 用於藉白光成色之 oled 裝置的奈米結構
JP6598504B2 (ja) * 2015-05-07 2019-10-30 キヤノン株式会社 半導体装置の製造方法
JP6671864B2 (ja) * 2015-05-18 2020-03-25 キヤノン株式会社 撮像装置の製造方法および撮像装置
JP6700811B2 (ja) 2016-01-26 2020-05-27 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP6789653B2 (ja) 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
JP6808348B2 (ja) 2016-04-28 2021-01-06 キヤノン株式会社 光電変換装置およびカメラ
JP7490543B2 (ja) * 2016-04-28 2024-05-27 キヤノン株式会社 光電変換装置およびカメラ
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
JP7250427B2 (ja) * 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体
KR102498582B1 (ko) * 2018-02-26 2023-02-14 에스케이하이닉스 주식회사 파티션 패턴들을 가진 이미지 센서
KR102658571B1 (ko) * 2019-06-11 2024-04-19 에스케이하이닉스 주식회사 이미지 센싱 장치 및 그 제조 방법
JP2020102656A (ja) * 2020-04-06 2020-07-02 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP7059336B2 (ja) * 2020-11-04 2022-04-25 キヤノン株式会社 光電変換装置およびカメラ
JP2023083369A (ja) * 2020-12-09 2023-06-15 キヤノン株式会社 光電変換装置およびカメラ
KR102885926B1 (ko) 2021-01-12 2025-11-12 삼성전자주식회사 이미지 센서

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021540A (ja) * 1983-07-15 1985-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH02214159A (ja) 1989-02-14 1990-08-27 Mitsubishi Electric Corp 赤外線撮像装置
JPH1117002A (ja) * 1997-06-24 1999-01-22 Seiko Epson Corp 半導体装置の製造方法
JP2004228407A (ja) 2003-01-24 2004-08-12 Sony Corp 固体撮像素子および固体撮像素子の製造方法
JP2005123449A (ja) 2003-10-17 2005-05-12 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US7078779B2 (en) * 2004-10-15 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd Enhanced color image sensor device and method of making the same
JP2006344644A (ja) 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
US20070235783A9 (en) 2005-07-19 2007-10-11 Micron Technology, Inc. Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions
KR100809323B1 (ko) * 2006-01-31 2008-03-05 삼성전자주식회사 크로스토크가 감소하고 감도가 증가한 이미지 센서
JP2007227761A (ja) 2006-02-24 2007-09-06 Matsushita Electric Ind Co Ltd 固体撮像装置用素子
DE102006054334B3 (de) * 2006-11-17 2008-07-10 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes mit Isolationsgraben und Kontaktgraben
JP2009147211A (ja) 2007-12-17 2009-07-02 Fujifilm Corp 半導体装置の製造方法、半導体装置、及び、固体撮像装置
JP4599417B2 (ja) 2008-01-31 2010-12-15 富士フイルム株式会社 裏面照射型固体撮像素子
US7800192B2 (en) * 2008-02-08 2010-09-21 Omnivision Technologies, Inc. Backside illuminated image sensor having deep light reflective trenches
JP2010206173A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2011023470A (ja) 2009-07-14 2011-02-03 Toshiba Corp Ｃｍｏｓイメージセンサ、及びその製造方法
JP4977181B2 (ja) 2009-08-10 2012-07-18 株式会社東芝 固体撮像装置およびその製造方法
JP2011119558A (ja) * 2009-12-07 2011-06-16 Panasonic Corp 固体撮像装置
KR20110077116A (ko) * 2009-12-30 2011-07-07 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP5669251B2 (ja) 2010-01-20 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8587081B2 (en) * 2010-04-28 2013-11-19 Calvin Yi-Ping Chao Back side illuminated image sensor with back side pixel substrate bias
JP5715351B2 (ja) 2010-06-30 2015-05-07 キヤノン株式会社 半導体装置およびその製造方法、ならびに固体撮像装置
JP5682174B2 (ja) * 2010-08-09 2015-03-11 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
FR2969385A1 (fr) * 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Capteur d'images a taux d'intermodulation réduit
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
JP5606961B2 (ja) * 2011-02-25 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置
JP2012028790A (ja) * 2011-08-19 2012-02-09 Renesas Electronics Corp 半導体装置
US8779539B2 (en) * 2011-09-21 2014-07-15 United Microelectronics Corporation Image sensor and method for fabricating the same
JP5696081B2 (ja) * 2012-03-23 2015-04-08 株式会社東芝 固体撮像装置
US8941204B2 (en) * 2012-04-27 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for reducing cross talk in image sensors
KR101968197B1 (ko) * 2012-05-18 2019-04-12 삼성전자주식회사 이미지 센서 및 이의 형성 방법
US8889461B2 (en) * 2012-05-29 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. CIS image sensors with epitaxy layers and methods for forming the same
JP2014011304A (ja) * 2012-06-29 2014-01-20 Toshiba Corp 固体撮像装置
US10009552B2 (en) * 2012-09-20 2018-06-26 Semiconductor Components Industries, Llc Imaging systems with front side illuminated near infrared imaging pixels
KR102083402B1 (ko) * 2013-02-25 2020-03-02 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법

Also Published As

Publication number Publication date
US20230246053A1 (en) 2023-08-03
US20170005123A1 (en) 2017-01-05
US20200203402A1 (en) 2020-06-25
US12159891B2 (en) 2024-12-03
JP2014204047A (ja) 2014-10-27
US9508768B2 (en) 2016-11-29
US11664402B2 (en) 2023-05-30
US20140299958A1 (en) 2014-10-09

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