JP2013041915A5 - - Google Patents
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- JP2013041915A5 JP2013041915A5 JP2011176721A JP2011176721A JP2013041915A5 JP 2013041915 A5 JP2013041915 A5 JP 2013041915A5 JP 2011176721 A JP2011176721 A JP 2011176721A JP 2011176721 A JP2011176721 A JP 2011176721A JP 2013041915 A5 JP2013041915 A5 JP 2013041915A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- pinning layer
- conversion unit
- solid
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011176721A JP5999402B2 (ja) | 2011-08-12 | 2011-08-12 | 固体撮像素子および製造方法、並びに電子機器 |
| US13/564,030 US8785993B2 (en) | 2011-08-12 | 2012-08-01 | Solid-state imaging element, manufacturing method, and electronic device |
| CN201210276159.7A CN103117289B (zh) | 2011-08-12 | 2012-08-03 | 固体摄像元件、固体摄像元件制造方法和电子设备 |
| US14/322,132 US20140312451A1 (en) | 2011-08-12 | 2014-07-02 | Solid-state imaging element, manufacturing method, and electronic device |
| US17/305,548 US20210335875A1 (en) | 2011-08-12 | 2021-07-09 | Solid-state imaging element, manufacturing method, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011176721A JP5999402B2 (ja) | 2011-08-12 | 2011-08-12 | 固体撮像素子および製造方法、並びに電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013041915A JP2013041915A (ja) | 2013-02-28 |
| JP2013041915A5 true JP2013041915A5 (enExample) | 2014-09-25 |
| JP5999402B2 JP5999402B2 (ja) | 2016-09-28 |
Family
ID=47677003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011176721A Active JP5999402B2 (ja) | 2011-08-12 | 2011-08-12 | 固体撮像素子および製造方法、並びに電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US8785993B2 (enExample) |
| JP (1) | JP5999402B2 (enExample) |
| CN (1) | CN103117289B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201012631D0 (en) * | 2010-07-28 | 2010-09-15 | Isis Innovation | Image sensor and method of sensing |
| JP6303803B2 (ja) | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP2015106621A (ja) * | 2013-11-29 | 2015-06-08 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP6242211B2 (ja) * | 2013-12-26 | 2017-12-06 | キヤノン株式会社 | 撮像装置および撮像システム |
| CN103855178B (zh) * | 2014-03-11 | 2016-07-06 | 格科微电子（上海）有限公司 | 图像传感器 |
| JP2015185823A (ja) | 2014-03-26 | 2015-10-22 | ソニー株式会社 | 固体撮像素子、及び、撮像装置 |
| JP2016012904A (ja) | 2014-06-02 | 2016-01-21 | ソニー株式会社 | 撮像素子、撮像方法、および電子機器 |
| CN104143558B (zh) * | 2014-08-15 | 2018-03-27 | 北京思比科微电子技术股份有限公司 | 一种提高阱容量的图像传感器像素及其制作方法 |
| US9799699B2 (en) * | 2014-09-24 | 2017-10-24 | Omnivision Technologies, Inc. | High near infrared sensitivity image sensor |
| JP7029037B2 (ja) * | 2015-09-18 | 2022-03-04 | 国立大学法人静岡大学 | 固体撮像装置 |
| TWI785618B (zh) * | 2016-01-27 | 2022-12-01 | 日商新力股份有限公司 | 固體攝像元件及電子機器 |
| JP6789653B2 (ja) | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| US10109668B2 (en) * | 2017-03-20 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pixel structure of an image sensor and fabrication method thereof |
| CN109256157B (zh) * | 2017-07-12 | 2022-04-01 | 格科微电子（上海）有限公司 | 多值存储器的实现方法 |
| JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| EP3748956B1 (en) | 2018-02-01 | 2023-09-27 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and method for manufacturing same, and electronic apparatus |
| JP2019145544A (ja) | 2018-02-16 | 2019-08-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| KR102549400B1 (ko) | 2018-03-21 | 2023-06-30 | 에스케이하이닉스 주식회사 | Pd 바이어스 패턴들을 갖는 이미지 센서 |
| KR102524415B1 (ko) * | 2018-03-21 | 2023-04-24 | 에스케이하이닉스 주식회사 | Pd 바이어스 패턴들을 갖는 이미지 센서 |
| JP2019176089A (ja) | 2018-03-29 | 2019-10-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
| TWI834644B (zh) * | 2018-05-18 | 2024-03-11 | 日商索尼半導體解決方案公司 | 攝像元件及電子機器 |
| US12002823B2 (en) * | 2018-07-03 | 2024-06-04 | Sony Semiconductor Solutions Corporation | Solid-state image sensor with imaging device blocks that each include imaging devices |
| JP2020027903A (ja) * | 2018-08-15 | 2020-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
| JP7603379B2 (ja) * | 2020-03-30 | 2024-12-20 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
| CN115485843A (zh) * | 2020-05-26 | 2022-12-16 | 索尼半导体解决方案公司 | 测距装置 |
| TW202306210A (zh) * | 2021-06-25 | 2023-02-01 | 日商半導體能源研究所股份有限公司 | 受光器件、受發光裝置 |
| US20230402477A1 (en) * | 2022-06-10 | 2023-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor |
| WO2025036368A1 (zh) * | 2023-08-16 | 2025-02-20 | 上海联影微电子科技有限公司 | 光电二极管及其制造方法、电子元件 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5134489A (en) * | 1990-12-28 | 1992-07-28 | David Sarnoff Research Center, Inc. | X-Y addressable solid state imager for low noise operation |
| US5378641A (en) * | 1993-02-22 | 1995-01-03 | Micron Semiconductor, Inc. | Electrically conductive substrate interconnect continuity region and method of forming same with an angled implant |
| US6642583B2 (en) * | 2001-06-11 | 2003-11-04 | Fuji Electric Co., Ltd. | CMOS device with trench structure |
| US6436778B1 (en) * | 2001-06-12 | 2002-08-20 | Advanced Micro Devices, Inc. | Re-oxidation approach to improve peripheral gate oxide integrity in a tunnel nitride oxidation process |
| JP4470363B2 (ja) * | 2002-10-04 | 2010-06-02 | ソニー株式会社 | 固体撮像素子及びその制御方法 |
| KR100477790B1 (ko) * | 2003-03-13 | 2005-03-22 | 매그나칩 반도체 유한회사 | 씨모스 이미지센서의 제조방법 |
| JP2005093866A (ja) * | 2003-09-19 | 2005-04-07 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法 |
| US7542085B2 (en) * | 2003-11-26 | 2009-06-02 | Aptina Imaging Corporation | Image sensor with a capacitive storage node linked to transfer gate |
| JP2005167588A (ja) * | 2003-12-02 | 2005-06-23 | Sony Corp | 固体撮像素子の駆動方法、固体撮像装置 |
| US7330032B2 (en) * | 2003-12-30 | 2008-02-12 | The Mitre Corporation | Techniques for building-scale electrostatic tomography |
| KR100760142B1 (ko) * | 2005-07-27 | 2007-09-18 | 매그나칩 반도체 유한회사 | 고해상도 ｃｍｏｓ 이미지 센서를 위한 스택형 픽셀 |
| US7728277B2 (en) * | 2005-11-16 | 2010-06-01 | Eastman Kodak Company | PMOS pixel structure with low cross talk for active pixel image sensors |
| JP2007201092A (ja) * | 2006-01-25 | 2007-08-09 | Fujifilm Corp | 固体撮像素子及びその駆動方法 |
| JP2008091702A (ja) * | 2006-10-03 | 2008-04-17 | Sharp Corp | 固体撮像装置およびその製造方法、電子情報機器 |
| DE102008011929A1 (de) * | 2008-02-29 | 2009-09-10 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Implantieren einer Ionensorte in einer Mikrostruktur durch gleichzeitiges Reinigen der Implantationsanlage |
| US7800147B2 (en) * | 2008-03-27 | 2010-09-21 | International Business Machines Corporation | CMOS image sensor with reduced dark current |
| US7732845B2 (en) * | 2008-04-08 | 2010-06-08 | International Business Machines Corporation | Pixel sensor with reduced image lag |
| JP5374941B2 (ja) | 2008-07-02 | 2013-12-25 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| KR20100022670A (ko) * | 2008-08-20 | 2010-03-03 | 크로스텍 캐피탈, 엘엘씨 | 전기적 제어가능한 피닝층을 갖는 이미지 센서의 픽셀 |
| US20100140668A1 (en) * | 2008-12-08 | 2010-06-10 | Stevens Eric G | Shallow trench isolation regions in image sensors |
| US8872953B2 (en) * | 2009-10-30 | 2014-10-28 | Sony Corporation | Solid-state imaging device, manufacturing method thereof, camera, and electronic device |
| US20120083067A1 (en) * | 2010-09-30 | 2012-04-05 | Doan Hung Q | Method for forming photodetector isolation in imagers |
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2011
- 2011-08-12 JP JP2011176721A patent/JP5999402B2/ja active Active
-
2012
- 2012-08-01 US US13/564,030 patent/US8785993B2/en active Active
- 2012-08-03 CN CN201210276159.7A patent/CN103117289B/zh active Active
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2014
- 2014-07-02 US US14/322,132 patent/US20140312451A1/en not_active Abandoned
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2021
- 2021-07-09 US US17/305,548 patent/US20210335875A1/en not_active Abandoned