CN103117289B - 固体摄像元件、固体摄像元件制造方法和电子设备 - Google Patents

固体摄像元件、固体摄像元件制造方法和电子设备 Download PDF

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CN103117289B
CN103117289B CN201210276159.7A CN201210276159A CN103117289B CN 103117289 B CN103117289 B CN 103117289B CN 201210276159 A CN201210276159 A CN 201210276159A CN 103117289 B CN103117289 B CN 103117289B
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pixel
solid
photoelectric conversion
pinning layer
state imager
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CN103117289A (zh
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阿部高志
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210276159.7A 2011-08-12 2012-08-03 固体摄像元件、固体摄像元件制造方法和电子设备 Active CN103117289B (zh)

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JP2011176721A JP5999402B2 (ja) 2011-08-12 2011-08-12 固体撮像素子および製造方法、並びに電子機器
JP2011-176721 2011-08-12

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CN103117289B true CN103117289B (zh) 2017-03-01

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US (3) US8785993B2 (enExample)
JP (1) JP5999402B2 (enExample)
CN (1) CN103117289B (enExample)

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JP6789653B2 (ja) 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
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JP6932580B2 (ja) * 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
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JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
KR102549400B1 (ko) 2018-03-21 2023-06-30 에스케이하이닉스 주식회사 Pd 바이어스 패턴들을 갖는 이미지 센서
KR102524415B1 (ko) * 2018-03-21 2023-04-24 에스케이하이닉스 주식회사 Pd 바이어스 패턴들을 갖는 이미지 센서
JP2019176089A (ja) 2018-03-29 2019-10-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
TWI834644B (zh) * 2018-05-18 2024-03-11 日商索尼半導體解決方案公司 攝像元件及電子機器
US12002823B2 (en) * 2018-07-03 2024-06-04 Sony Semiconductor Solutions Corporation Solid-state image sensor with imaging device blocks that each include imaging devices
JP2020027903A (ja) * 2018-08-15 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP7603379B2 (ja) * 2020-03-30 2024-12-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN115485843A (zh) * 2020-05-26 2022-12-16 索尼半导体解决方案公司 测距装置
TW202306210A (zh) * 2021-06-25 2023-02-01 日商半導體能源研究所股份有限公司 受光器件、受發光裝置
US20230402477A1 (en) * 2022-06-10 2023-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor
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JP2013041915A (ja) 2013-02-28
JP5999402B2 (ja) 2016-09-28
US8785993B2 (en) 2014-07-22
US20140312451A1 (en) 2014-10-23
US20210335875A1 (en) 2021-10-28
US20130037900A1 (en) 2013-02-14
CN103117289A (zh) 2013-05-22

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