JP5999402B2 - 固体撮像素子および製造方法、並びに電子機器 - Google Patents

固体撮像素子および製造方法、並びに電子機器 Download PDF

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JP5999402B2
JP5999402B2 JP2011176721A JP2011176721A JP5999402B2 JP 5999402 B2 JP5999402 B2 JP 5999402B2 JP 2011176721 A JP2011176721 A JP 2011176721A JP 2011176721 A JP2011176721 A JP 2011176721A JP 5999402 B2 JP5999402 B2 JP 5999402B2
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photoelectric conversion
conversion unit
pixel
potential
pinning layer
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JP2013041915A (ja
JP2013041915A5 (enExample
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阿部　高志
高志 阿部
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Sony Corp
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Sony Corp
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Priority to JP2011176721A priority Critical patent/JP5999402B2/ja
Priority to US13/564,030 priority patent/US8785993B2/en
Priority to CN201210276159.7A priority patent/CN103117289B/zh
Publication of JP2013041915A publication Critical patent/JP2013041915A/ja
Priority to US14/322,132 priority patent/US20140312451A1/en
Publication of JP2013041915A5 publication Critical patent/JP2013041915A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011176721A 2011-08-12 2011-08-12 固体撮像素子および製造方法、並びに電子機器 Active JP5999402B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011176721A JP5999402B2 (ja) 2011-08-12 2011-08-12 固体撮像素子および製造方法、並びに電子機器
US13/564,030 US8785993B2 (en) 2011-08-12 2012-08-01 Solid-state imaging element, manufacturing method, and electronic device
CN201210276159.7A CN103117289B (zh) 2011-08-12 2012-08-03 固体摄像元件、固体摄像元件制造方法和电子设备
US14/322,132 US20140312451A1 (en) 2011-08-12 2014-07-02 Solid-state imaging element, manufacturing method, and electronic device
US17/305,548 US20210335875A1 (en) 2011-08-12 2021-07-09 Solid-state imaging element, manufacturing method, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011176721A JP5999402B2 (ja) 2011-08-12 2011-08-12 固体撮像素子および製造方法、並びに電子機器

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JP2013041915A JP2013041915A (ja) 2013-02-28
JP2013041915A5 JP2013041915A5 (enExample) 2014-09-25
JP5999402B2 true JP5999402B2 (ja) 2016-09-28

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US (3) US8785993B2 (enExample)
JP (1) JP5999402B2 (enExample)
CN (1) CN103117289B (enExample)

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JP7603379B2 (ja) * 2020-03-30 2024-12-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN115485843A (zh) * 2020-05-26 2022-12-16 索尼半导体解决方案公司 测距装置
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Also Published As

Publication number Publication date
CN103117289B (zh) 2017-03-01
JP2013041915A (ja) 2013-02-28
US8785993B2 (en) 2014-07-22
US20140312451A1 (en) 2014-10-23
US20210335875A1 (en) 2021-10-28
US20130037900A1 (en) 2013-02-14
CN103117289A (zh) 2013-05-22

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