TWI536553B - 固態影像感測裝置及固態影像感測裝置之製造方法 - Google Patents
固態影像感測裝置及固態影像感測裝置之製造方法 Download PDFInfo
- Publication number
- TWI536553B TWI536553B TW103134431A TW103134431A TWI536553B TW I536553 B TWI536553 B TW I536553B TW 103134431 A TW103134431 A TW 103134431A TW 103134431 A TW103134431 A TW 103134431A TW I536553 B TWI536553 B TW I536553B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- solid
- region
- impurity
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000003384 imaging method Methods 0.000 title description 8
- 238000000034 method Methods 0.000 title description 5
- 239000012535 impurity Substances 0.000 claims description 77
- 238000006243 chemical reaction Methods 0.000 claims description 74
- 239000010410 layer Substances 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 238000009825 accumulation Methods 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 21
- 230000003321 amplification Effects 0.000 description 12
- 238000003199 nucleic acid amplification method Methods 0.000 description 12
- 230000000875 corresponding effect Effects 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000003705 background correction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Light Receiving Elements (AREA)
Description
[關連申請案參照]
本申請案享受2013年10月30日申請之日本發明專利申請案編號2013-225904之優先權利益,該日本發明專利申請案的所有內容被援用於本申請案中。
本實施形態一般而言係有關固態影像感測裝置及固態影像感測裝置之製造方法。
習知,設於固態影像感測裝置之CMOS(Complementary Metal Oxide Semiconductor,互補式金屬氧化物半導體)影像感測器,具備複數個光電變換元件、浮動擴散、傳輸電晶體、重置電晶體、放大電晶體等。
光電變換元件,是將入射光光電變換成和光量相應之訊號電荷並蓄積之元件。傳輸電晶體,是將蓄積
於光電變換元件之訊號電荷傳輸給浮動擴散之電晶體。放大電晶體,是將傳輸給浮動擴散之訊號電荷予以放大之電晶體。重置電晶體,是將浮動擴散的電位重置成規定電位之電晶體。
該CMOS影像感測器中,一般而言,複數個光電變換元件的電荷蓄積區域與上述電晶體的通道是設於同一半導體層。因此,CMOS影像感測器中,在和光電變換元件的電荷蓄積區域為相反導電型之井(well)內會設置電晶體的主動區域,使井的雜質濃度成為一定以上,藉此讓光電變換元件與電晶體的通道被元件分離。
然而,固態影像感測裝置,當為了提升元件分離特性而提高井的雜質濃度的情形下,例如放大電晶體的調變度可能會降低,輸出訊號的C/N比(Carrier to Noise Ratio,載波雜訊比)可能會劣化。
本發明所欲解決之問題,在於提供一種可提升輸出訊號的C/N比的固態影像感測裝置及固態影像感測裝置之製造方法。
一實施形態的固態影像感測裝置,具備:複數個光電變換元件,設於半導體層;雜質層,和排列有前述光電變換元件之半導體層設於同一層,且含有和前述光電變換元件的電荷蓄積區域為相反導電型之雜質;低濃度區域,設於前述雜質層的內部,其前述雜質的濃度比前述
雜質層還低;及電晶體,其主動區域設於前述雜質層。
另一實施形態的固態影像感測裝置之製造方法,包含:在半導體層形成複數個光電變換元件,形成雜質層,其和排列有前述光電變換元件之半導體層在同一層,且含有和前述光電變換元件的電荷蓄積區域為相反導電型之雜質,在前述雜質層的內部,形成低濃度區域,其前述雜質的濃度比前述雜質層還低,在前述雜質層,形成電晶體的主動區域。
按照上述構成之固態影像感測裝置及固態影像感測裝置之製造方法,便可提升輸出訊號的C/N比。
1‧‧‧數位相機
11‧‧‧相機模組
12‧‧‧後段處理部
13‧‧‧攝像光學系統
14‧‧‧固態影像感測裝置
15‧‧‧ISP(Image Signal Processor)
16‧‧‧記憶部
17‧‧‧顯示部
20‧‧‧影像感測器
21‧‧‧訊號處理電路
22‧‧‧周邊電路
23‧‧‧像素陣列
24‧‧‧垂直移位暫存器
25‧‧‧時序控制部
26‧‧‧CDS(相關雙重取樣部)
27‧‧‧ADC(類比數位變換部)
28‧‧‧線記憶體
30‧‧‧N型的磊晶層
31‧‧‧N型半導體區域
32‧‧‧P型半導體區域
41,42‧‧‧阻劑
51‧‧‧阻劑41的開口
52‧‧‧溝
62‧‧‧低濃度區域
63‧‧‧閘極絕緣膜
64‧‧‧STI(Shallow Trench Isolation)
61a、61b‧‧‧井
ADR‧‧‧位址電晶體
AMP‧‧‧放大電晶體
FD‧‧‧浮動擴散
G‧‧‧閘極
PD‧‧‧光電變換元件
RG‧‧‧閘極
RST‧‧‧重置電晶體
TG‧‧‧傳輸閘極
TRS‧‧‧傳輸電晶體
Vdd‧‧‧電源電壓線
Vsig‧‧‧輸出訊號線
圖1為具備實施形態之固態影像感測裝置的數位相機概略構成示意方塊圖。
圖2為實施形態之固態影像感測裝置的概略構成示意方塊圖。
圖3為實施形態之像素陣列的電路構成一例示意說明圖。
圖4為實施形態之像素陣列的俯視說明圖。
圖5為實施形態之放大電晶體的截面視說明圖。
圖6A~圖6D為實施形態之放大電晶體的製造工程示意截面視說明圖。
圖7A~圖7C為實施形態之放大電晶體的製
造工程示意截面視說明圖。
圖8A~圖8C為實施形態之重置電晶體的製造工程示意截面視說明圖。
圖9A~圖9C為實施形態之重置電晶體的製造工程示意截面視說明圖。
依照本實施形態,係提供一種固態影像感測裝置。固態影像感測裝置,具備複數個光電變換元件、雜質層、低濃度區域、電晶體。複數個光電變換元件,設於半導體層。雜質層,和排列有前述光電變換元件之半導體層設於同一層,且含有和前述光電變換元件的電荷蓄積區域為相反導電型之雜質。低濃度區域,設於前述雜質層的內部,其前述雜質的濃度比前述雜質層還低。電晶體,其主動區域設於前述雜質層。
以下參照所附圖面,詳細說明實施形態之固態影像感測裝置及固態影像感測裝置之製造方法。另,本發明並非由該實施形態所限定。
圖1為具備實施形態之固態影像感測裝置14的數位相機1概略構成示意方塊圖。如圖1所示,數位相機1具備相機模組11與後段處理部12。
相機模組11具備攝像光學系統13與固態影像感測裝置14。攝像光學系統13攝入來自被攝體的光,使被攝體像成像。固態影像感測裝置14,會將藉由攝像
光學系統13而成像之被攝體像予以攝像,並將藉由攝像而得之圖像訊號輸出至後段處理部12。該相機模組11除了數位相機1以外,例如還可運用於附相機之行動終端等電子機器。
後段處理部12具備ISP(Image Signal Processor,影像訊號處理器)15、記憶部16及顯示部17。ISP15對於從固態影像感測裝置14輸入之圖像訊號進行訊號處理。該ISP15例如會進行雜訊除去處理、缺陷像素修正處理、解析度變換處理等高畫質化處理。
接著,ISP15會將訊號處理後的圖像訊號輸出給記憶部16、顯示部17以及相機模組11內的固態影像感測裝置14所具備之後述訊號處理電路21(參照圖2)。從ISP15反饋給相機模組11的圖像訊號,係用於固態影像感測裝置14的調整或控制。
記憶部16會將從ISP15輸入的圖像訊號記憶成為圖像。此外,記憶部16會將記憶的圖像之圖像訊號因應使用者之操作等而輸出給顯示部17。顯示部17會因應從ISP15或記憶部16輸入之圖像訊號而顯示圖像。該顯示部17例如為液晶顯示器。
接著參照圖2,說明相機模組11具備之固態影像感測裝置14。圖2為實施形態之固態影像感測裝置14的概略構成示意方塊圖。如圖2所示,固態影像感測裝置14具備影像感測器20、訊號處理電路21。
此處,係針對影像感測器20為所謂表面照射
型CMOS(Complementary Metal Oxide Semiconductor)影像感測器的情形,亦即配線層是形成於將入射光做光電變換的光電變換元件中入射光入射之面的情形來說明。
另,本實施形態之影像感測器20,並不限定於表面照射型CMOS影像感測器,亦可為背面照射型CMOS影像感測器、或CCD(Charge Coupled Device)影像感測器等任意之影像感測器。
影像感測器20具備周邊電路22、像素陣列23。此外,周邊電路22具備垂直移位暫存器24、時序控制部25、CDS(Correlated Double Sampling,相關雙重取樣部)26、ADC(類比數位變換部)27、及線記憶體(line memory)28。
像素陣列23設於影像感測器20的攝像區域。在該像素陣列23,與攝像圖像的各像素相對應之複數個光電變換元件亦即光二極體(photodiode),是朝水平方向(列方向)及垂直方向(行方向)配置成二維陣列狀。又,像素陣列23中,與各像素相對應之各光電變換元件會產生相應於入射光量的訊號電荷(例如電子)。
時序控制部25係為對垂直移位暫存器24輸出脈衝訊號以作為動作時序基準之處理部。垂直移位暫存器24,係為從配置成陣列(行列)狀之複數個光電變換元件當中,將用來以列單位依序選擇讀取訊號電荷的光電變換元件之選擇訊號輸出至像素陣列23之處理部。
像素陣列23係將藉由從垂直移位暫存器24
輸入的選擇訊號而以列單位被選擇之各光電變換元件中蓄積的訊號電荷,從光電變換元件輸出至CDS26以作為示意各像素亮度之像素訊號。另,有關像素陣列23之電路構成一例,參照圖3後述之。
CDS26係為從自像素陣列23輸入的像素訊號中,藉由相關雙重取樣除去雜訊而輸出至ADC27之處理部。ADC27係為將從CDS26輸入的類比像素訊號變換成數位像素訊號並輸出至線記憶體28之處理部。線記憶體28係為暫時保持從ADC27輸入的像素訊號,並依像素陣列23中的每一列光電變換元件而輸出至訊號處理電路21之處理部。
訊號處理電路21係為對從線記憶體28輸入的像素訊號進行規定訊號處理並輸出至後段處理部12之處理部。訊號處理電路21係對像素訊號例如進行鏡頭陰影校正(shading correction)、傷痕修正、雜訊減低處理等訊號處理。
像這樣,影像感測器20中,配置於像素陣列23的複數個光電變換元件會將入射光光電變換成與受光量相應的量之訊號電荷並蓄積,周邊電路22會將各光電變換元件中蓄積的訊號電荷讀出成為像素訊號,藉此進行攝像。
接著參照圖3,簡單說明像素陣列23的電路構成及動作。圖3為實施形態之像素陣列23的電路構成一例示意說明圖。另,圖3所示電路,是在像素陣列23
當中,將對應於攝像圖像的1個像素之部分予以選擇性抽出之電路。
另,此處是說明對應於攝像圖像的1個像素而設置2個光電變換元件PD之情形,但對應於攝像圖像的1個像素而設置之光電變換元件PD的個數亦可為1個、或為3個以上。
如圖3所示,像素陣列23具備2個光電變換元件PD、2個傳輸電晶體TRS。又,像素陣列23具備浮動擴散FD、放大電晶體AMP、重置電晶體RST、位址電晶體ADR。另,有關2個光電變換元件PD、2個傳輸電晶體TRS、浮動擴散FD、放大電晶體AMP、重置電晶體RST的物理上的配置一例,參照圖4後述之。
各光電變換元件PD為光二極體,其陰極連接至接地,陽極連接至傳輸電晶體TRS的源極。2個傳輸電晶體TRS的各汲極,連接至1個浮動擴散FD。
各傳輸電晶體TRS,當閘極電極被輸入轉送訊號,便將被光電變換元件PD光電變換之訊號電荷傳輸至浮動擴散FD。於浮動擴散FD連接著重置電晶體RST的源極。
此外,重置電晶體RST的汲極連接至電源電壓線Vdd。該重置電晶體RST,在訊號電荷被傳輸至浮動擴散FD前,若有重置訊號輸入給閘極電極,便將浮動擴散FD的電位重置成電源電壓的電位。
此外,於浮動擴散FD連接著放大電晶體
AMP的閘極電極。該放大電晶體AMP的源極,連接至將訊號電荷輸出給CDS26之輸出訊號線Vsig,汲極連接至位址電晶體ADR的源極。此外,位址電晶體ADR的汲極連接至電源電壓線Vdd。
像素陣列23中,當位址訊號被輸入至位址電晶體ADR的閘極電極,則會從放大電晶體AMP輸出和傳輸給浮動擴散FD之訊號電荷的電荷量相應且被放大之訊號給CDS26。
接著參照圖4,說明2個光電變換元件PD、2個傳輸電晶體TRS、浮動擴散FD、放大電晶體AMP、重置電晶體RST的物理上的配置一例。圖4為實施形態之像素陣列23的俯視說明圖。另,圖4中,是選擇性地圖示像素陣列23當中對應於攝像圖像的1個像素之部分。
如圖4所示,在像素陣列23當中對應於攝像圖像的1個像素之區域,配置著被電性元件分離之2個光電變換元件PD。又,在2個光電變換元件PD之間,配置著浮動擴散FD、重置電晶體RST的閘極RG、放大電晶體AMP的閘極G。
此外,在各光電變換元件PD與浮動擴散FD之間的半導體層上,分別配置著傳輸電晶體TRS的傳輸閘極TG。在重置電晶體RST及放大電晶體AMP與2個光電變換元件PD之間,配置著STI(Shallow Trench Isolation,淺溝槽隔離)64。該STI64,是設置成包圍重置電晶體RST及放大電晶體AMP。
像這樣,像素陣列23具備如下構成,即,藉由2個光電變換元件PD,來共用浮動擴散FD、重置電晶體RST、位址電晶體ADR、放大電晶體AMP。
如此一來,按照像素陣列23,相較於在每個光電變換元件PD設有浮動擴散、重置電晶體、位址電晶體、放大電晶體之像素陣列而言,能夠將尺寸小型化。
該像素陣列23中,一般而言,各光電變換元件PD的電荷蓄積區域,與重置電晶體RST或放大電晶體AMP的通道是設於同一半導體層。因此,像素陣列23中,在和光電變換元件PD的電荷蓄積區域為相反導電型之雜質層亦即井內,會設置重置電晶體RST及放大電晶體AMP的主動區域。又,使井的雜質濃度成為一定以上,藉此光電變換元件PD與重置電晶體RST及放大電晶體AMP的通道會被元件分離。
然而,像素陣列23中,當為了提升元件分離特性而提高井的雜質濃度的情形下,例如會有放大電晶體AMP的調變度降低,輸出訊號的C/N比(Carrier to Noise Ratio)劣化之問題。
具體而言,放大電晶體AMP是作為源極隨耦電路(source follower circuit)來動作,因此若調變度降低,則閘極G的電容會變大,相對於輸入電壓的變化量而言輸出電壓的變化量亦會降低,而難以將輸出給CDS26之像素訊號充分地放大。
是故,固態影像感測裝置14中,在像素陣列
23的後段,假設重疊至像素訊號之雜訊為一定,那麼若像素訊號的放大率被減低,則表示相對於像素訊號之雜訊比的C/N比便會相應地劣化。
鑑此,本實施形態中,不使放大電晶體AMP的通道與光電變換元件PD之間的元件分離特性降低,而提升放大電晶體AMP的調變度,藉此來提升固態影像感測裝置14的C/N比。接著,有關該放大電晶體AMP之構成,參照圖5說明之。
圖5為實施形態之放大電晶體AMP的截面視說明圖。另,圖5中,模型化地揭示圖4所示A-A’線之截面。如圖5所示,放大電晶體AMP,設於2個光電變換元件PD之間。
放大電晶體AMP,具備閘極G、及設於閘極G的正下方之閘極絕緣膜63、及設於閘極絕緣膜63的下方之由P型半導體(例如Si:矽)所形成之雜質層的井61a、61b。該井61a、61b,和設有光電變換元件PD之半導體層是設於同一層。
此外,在井61a、61b的上面側內部,以包圍閘極G之方式設有STI64。STI64的形成方式,是在井61a、61b當中STI64的形成位置例如藉由RIE(Reactive Ion Etching,反應性離子蝕刻)形成溝槽,再於溝槽的內部設置絕緣膜。
另,此處雖未圖示,但放大電晶體AMP中,在井61a的內部,隔著閘極絕緣膜63於圖面面前側具備
摻入有N型雜質之汲極,於圖面背後側具備摻入有N型雜質之源極。也就是說,放大電晶體AMP為N通道型之MOS(Metal Oxide Semiconductor)。
此處,2個光電變換元件PD例如為光二極體,其藉由設於N型Si(矽)的磊晶層30之N型半導體區域31、及設於N型半導體區域31的上面之P型半導體區域32之間的PN接合而形成。該光電變換元件PD中,N型半導體區域31會成為因光電變換而產生之訊號電荷的電荷蓄積區域。
像這樣,放大電晶體AMP的通道,與成為光電變換元件PD的電荷蓄積區域之N型半導體區域31,導電型同為N型。因此,在井61a、61b,會摻入較高濃度的P型雜質,以便可將放大電晶體AMP的通道與光電變換元件PD的電荷蓄積區域予以電性元件分離。
但,若過度提高井61a、61b中的P型雜質濃度,則如前述般,放大電晶體AMP的調變度會降低,固態影像感測裝置14的C/N比會劣化。鑑此,放大電晶體AMP中,在井61b的內部具備P型雜質濃度比井61b還低之低濃度區域62。
放大電晶體AMP的調變度,是由閘極絕緣膜63的電容和空乏層的電容之比值所決定。是故,放大電晶體AMP,藉由在井61b的內部設置P型雜質濃度比井61b還低之低濃度區域62,來減低空乏層的電容,故相較於未設置低濃度區域62之情形,能夠提升調變度。
如此一來,放大電晶體AMP,便能增大相對於輸入電壓的變化量而言輸出電壓的變化量。其結果,固態影像感測裝置14中,對於放大電晶體AMP所輸出之像素訊號,假設在後段重疊之雜訊的量為一定的情形下,在後段能夠使像素訊號中佔有之雜訊的相對比例減少,故能提升(改善)C/N比。
此外,放大電晶體AMP,是與設置於設有光電變換元件PD的區域的外部之負載電晶體(圖示略)形成源極隨耦電路而動作,因此藉由調變度提升,閘極G與通道之間的電容會減低。
如此一來,從放大電晶體AMP看來,浮動擴散FD的相對的電容會減低。其結果,放大電晶體AMP中,因應浮動擴散FD中保持的訊號電荷的變化而變化之,輸入至放大電晶體AMP的閘極G之輸入電壓的變化量會增大,故對於訊號電荷之雜訊相對量會減低。
是故,固態影像感測裝置14中,在放大電晶體AMP的後段能夠使像素訊號中佔有之雜訊的相對比例減少,故能提升(改善)C/N比。
此外,低濃度區域62,是設於井61b的內部,該井61b是形成於比形成有放大電晶體AMP的通道之井61a還深的位置。更具體而言,低濃度區域62是設於井61b的內部當中,不會損及放大電晶體AMP的響應性,不會在源極及汲極間發生電流洩漏的程度之深度。
如此一來,作為放大電晶體AMP的通道之閘
極絕緣膜63正下方的區域,P型雜質濃度便會維持比低濃度區域62還高。是故,依照放大電晶體AMP,可抑制由於設置低濃度區域62所造成之臨限電壓(threshold voltage)過度降低,故能夠抑制在源極及汲極間發生電流洩漏。
另,低濃度區域62,亦可設於半導體層中比形成有放大電晶體AMP的源極之源極區域及比形成有汲極之汲極區域還深的位置。
此外,低濃度區域62,不與設置成包圍放大電晶體AMP之STI64的內周相接,而是在井61b內設於比STI64的內周還內側。如此一來,放大電晶體AMP中,能夠減低在STI64鄰近發生之電子所引起之雜訊影響。
具體而言,如前述般,STI64例如是由RIE等乾蝕刻來形成,故在與井61a、61b的交界面可能會發生結晶缺陷。若在STI64與井61a、61b的交界面發生結晶缺陷,則結晶缺陷所引起之電子會變為雜訊,流經放大電晶體AMP的通道。
鑑此,放大電晶體AMP中,低濃度區域62不與STI64的內周相接,而是在井61b內設於比STI64的內周還內側。如此一來,放大電晶體AMP中,電流容易流過通道的中央,故能夠減低在STI64與井61a、61b的交界面發生之雜訊影響。
接著參照圖6A~圖9C,說明實施形態之固態
影像感測裝置14之製造方法。此處,一面並行參照圖6A~圖7C、圖8A~圖9C,一面說明固態影像感測裝置14中的放大電晶體AMP、及重置電晶體RST之製造工程。
圖6A~圖7C為實施形態之放大電晶體AMP的製造工程示意截面視說明圖。此外,圖8A~圖9C為實施形態之重置電晶體RST的製造工程示意截面視說明圖。另,圖6A~圖7C中,揭示依圖4所示A-A'線之截面部分的製造工程,圖8A~圖9C中,揭示依圖4所示B-B'線之截面部分的製造工程。
實施形態之固態影像感測裝置14的製造工程,如圖6A及圖8A所示,在N型的磊晶層30當中光電變換元件PD的形成位置,例如將磷等N型雜質做離子植入。又,在離子植入有N型雜質之區域的表層,例如將硼等P型雜質做離子植入。其後,施以退火處理,來形成N型半導體區域31及P型半導體區域32,藉此形成光電變換元件PD。
接下來,如圖6B及圖8B所示,在N型的磊晶層30當中未形成有光電變換元件PD之區域上,形成設有開口51之阻劑41。其後,從阻劑41的開口51朝向N型的磊晶層30的表層部分,例如將硼等P型雜質做離子植入後,進行退火處理。
該工程中,是以下述處理條件進行離子植入,即,可使後續形成之放大電晶體AMP及重置電晶體RST的通道,與光電變換元件PD元件分離,且放大電晶
體AMP的臨限電壓成為所需值。離子植入的處理條件,例如是設定成硼濃度成為4*10^16atom/cm3左右。
此外,該工程中,是以下述處理條件來進行退火處理,即,P型雜質會擴散至最終形成之放大電晶體AMP的通道所形成之深度為止。如此一來,便如圖6C及圖8C所示,形成井61a。
接下來,以阻劑41作為遮罩,從阻劑41的開口51朝向N型的磊晶層30,例如將硼等P型雜質做離子植入至比井61a還深的位置後,進行退火處理。
該工程中,是以下述處理條件來將P型雜質做離子植入,即,P型雜質濃度會成為比後續形成之井61b(參照圖5、圖7B、圖9B)還低濃度。離子植入的處理條件,例如是設定成硼濃度成為3*10^16atom/cm3左右。如此一來,便如圖6D及圖9A所示,在比井61a還深的位置,形成低濃度區域62。
其後,如圖7A所示,以被覆井61a上面的中央區域之方式,形成阻劑42。該工程中,是將阻劑42形成為,於俯視時不會與後續形成為包圍放大電晶體AMP之STI64的內周相接,且大小限縮於STI64內周的內側。如此一來,便在阻劑41與阻劑42之間形成溝52。
此處,固態影像感測裝置14中,從增大光電變換元件PD的飽和電子數或提升受光靈敏度的觀點看來,必須儘可能擴大光電變換元件PD的獨佔面積。因此,像重置電晶體RST這類開關電晶體,會被設計成獨
佔面積減小。
相對於此,放大電晶體AMP中,1/f雜訊會大幅影響隨機雜訊,故其通道長及通道寬會被設計成比重置電晶體RST還大。如此一來,在形成有放大電晶體AMP之井61a的中央區域上,能夠比較容易藉由圖樣形成(patterning)來形成阻劑42,其結果,在阻劑41與阻劑42之間便會形成溝52。
其後,從圖7A所示之溝52、及圖9A所示之開口51朝向低濃度區域62,例如將硼等P型雜質做離子植入後,進行退火處理。
該工程中,是以下述處理條件將P型雜質做離子植入,即,使雜質濃度成為可使後續形成之放大電晶體AMP及重置電晶體RST的通道,與光電變換元件PD元件分離。離子植入的處理條件,例如是設定成成為6*10^16atom/cm3左右。
此外,該工程中,是以下述處理條件進行退火處理,即,P型雜質會擴散至,可使後續形成之放大電晶體AMP及重置電晶體RST的通道,與光電變換元件PD元件分離的深度。
如此一來,便如圖7B及圖9B所示,形成井61b。該井61b,是經由兩次的硼離子植入及退火處理來形成,故最終的硼濃度會成為9*10^16atom/cm3左右。
接下來,將阻劑41及阻劑42剝離後,如圖7C及圖9C所示,在井61a、61b的周緣部形成STI64,
在井61a的上面被STI64包圍之區域形成閘極絕緣膜63。然而,在形成有放大電晶體AMP之區域的閘極絕緣膜63上形成閘極G,在形成有重置電晶體RST之區域的閘極絕緣膜63上形成閘極RG。
STI64的形成方式,是在井61a、61b的周緣部,例如藉由RIE形成從井61a的上面到達至比井61a的下面還深的位置之溝槽,而在溝槽的內部例如填埋氧化Si。如此一來,STI64便會形成至比後續形成之放大電晶體AMP及重置電晶體RST的通道還深的位置。
閘極絕緣膜63例如是由氧化Si所形成。此時,亦同時形成傳輸電晶體TRS的閘極絕緣膜。此外,閘極G及閘極RG,例如是由多晶Si所形成。此時,亦同時形成傳輸電晶體TRS的閘極絕緣膜。
其後,隔著各閘極G及閘極RG在井61a的內部,分別形成放大電晶體AMP的源極及汲極、重置電晶體RST的源極及汲極。源極及汲極的形成方式,是對井61a例如將磷等P型雜質做離子植入後,進行退火處理。如此一來,便形成傳輸電晶體TRS、重置電晶體RST、放大電晶體AMP。
如上述般,實施形態之固態影像感測裝置,是在將被光電變換元件光電變換之訊號電荷予以放大之放大電晶體的井的內部中央區域,具備低濃度區域,其含有和井中含有之雜質為同一導電型之雜質,而比井還低濃度。
如此一來,能夠不使放大電晶體的通道與光電變換元件之間的元件分離特性降低,而提升放大電晶體的調變度。是故,實施形態之固態影像感測裝置,能夠提升(改善)輸出之像素訊號的C/N比。
另,上述實施形態僅為一例,可有各種變形。舉例來說,上述實施形態中,是在形成圖6C所示之井61a後,再形成圖6D所示之低濃度區域62,但亦可形成低濃度區域62後再形成井61a。
此外,上述實施形態中,是在放大電晶體AMP的井61b的內部中央區域設置低濃度區域62,但低濃度區域62亦可設於固態影像感測裝置14所具備之其他電晶體的井的內部中央區域。如此一來,可提升設於低濃度區域62之各電晶體的響應性。
此外,上述固態影像感測裝置14中的N型雜質與P型雜質之導電型,亦可分別為相反之導電型。在此情形下,固態影像感測裝置14所具備之各電晶體,會成為P通道型的電晶體。當在P通道型的電晶體設置低濃度區域的情形下,在N型的井的內部中央區域,會設置雜質濃度比井還低之N型低濃度區域。
以上已說明了本發明的數個實施形態,但該些實施形態僅是提出作為示例,並非意圖限定發明之範圍。該些新穎之實施形態,可藉由其他各種形態而實施,在不脫離發明要旨之範圍內,能夠進行種種省略、置換、變更。該些實施形態或其變形,均包含於發明之範圍或要
旨中,且包含於申請專利範圍記載之發明及其均等範圍內。
30‧‧‧N型的磊晶層
31‧‧‧N型半導體區域
32‧‧‧P型半導體區域
61a、61b‧‧‧井
62‧‧‧低濃度區域
63‧‧‧閘極絕緣膜
64‧‧‧STI(Shallow Trench Isolation)
AMP‧‧‧放大電晶體
G‧‧‧閘極
PD‧‧‧光電變換元件
Claims (12)
- 一種固態影像感測裝置,其特徵為,具備:複數個光電變換元件,設於半導體層;雜質層,和排列有前述光電變換元件之半導體層設於同一層,且含有和前述光電變換元件的電荷蓄積區域為相反導電型之雜質;低濃度區域,設於前述雜質層的內部,其前述雜質的濃度比前述雜質層還低;及電晶體,其主動區域設於前述雜質層;在前述雜質層,設有包圍前述電晶體之STI(Shallow Trench Isolation,淺溝槽隔離),前述低濃度區域,不與前述STI的內周相接,而設於比該內周還內側。
- 如申請專利範圍第1項所述之固態影像感測裝置,其中,前述低濃度區域,設於前述雜質層內的比形成有前述電晶體的通道之區域還深的位置。
- 如申請專利範圍第1項所述之固態影像感測裝置,其中,前述電晶體,為將被前述光電變換元件光電變換的訊號電荷予以放大之放大電晶體。
- 如申請專利範圍第1項所述之固態影像感測裝 置,其中,前述低濃度區域,設於前述半導體層的比前述電晶體之源極區域及汲極區域還深的位置。
- 如申請專利範圍第1項所述之固態影像感測裝置,其中,前述STI(Shallow Trench Isolation),形成至比前述電晶體的通道還深的位置。
- 如申請專利範圍第1項所述之固態影像感測裝置,其中,前述雜質層,包含:第1雜質層,設於前述半導體層的表層;及第2雜質層,設於前述半導體層的比前述第1雜質層還深的位置,其包圍前述低濃度區域的側周面,其前述雜質的濃度比前述第1雜質層還高。
- 一種固態影像感測裝置之製造方法,其特徵為,包含:在半導體層形成複數個光電變換元件,形成雜質層,其和排列有前述光電變換元件之半導體層在同一層,且含有和前述光電變換元件的電荷蓄積區域為相反導電型之雜質,在前述雜質層的內部,形成低濃度區域,其前述雜質的濃度比前述雜質層還低,在前述雜質層,形成電晶體的主動區域, 在前述雜質層,形成包圍前述電晶體之STI(Shallow Trench Isolation),不與前述STI的內周相接,而在比該內周還內側,形成前述低濃度區域。
- 如申請專利範圍第7項所述之固態影像感測裝置之製造方法,其中,包含:在前述雜質層內的比形成有前述電晶體的通道之區域還深的位置,形成前述低濃度區域。
- 如申請專利範圍第7項所述之固態影像感測裝置之製造方法,其中,包含:形成將被前述光電變換元件光電變換的訊號電荷予以放大之前述電晶體。
- 如申請專利範圍第7項所述之固態影像感測裝置之製造方法,其中,包含:在前述半導體層的比前述電晶體之源極區域及汲極區域還深的位置,形成前述低濃度區域。
- 如申請專利範圍第7項所述之固態影像感測裝置之製造方法,其中,包含:將前述STI(Shallow Trench Isolation)形成至比前述電晶體的通道還深的位置。
- 如申請專利範圍第7項之固態影像感測裝置之製造方法,其中,包含:在前述半導體層的表層形成第1雜質層,在前述半導體層的比前述第1雜質層還深的位置,形成第2雜質層,其包圍前述低濃度區域的側周面,且其前述雜質的濃度比前述第1雜質層還高,藉此形成前述雜質層。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013225904A JP2015088621A (ja) | 2013-10-30 | 2013-10-30 | 固体撮像装置および固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201519424A TW201519424A (zh) | 2015-05-16 |
TWI536553B true TWI536553B (zh) | 2016-06-01 |
Family
ID=52994412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103134431A TWI536553B (zh) | 2013-10-30 | 2014-10-02 | 固態影像感測裝置及固態影像感測裝置之製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9312296B2 (zh) |
JP (1) | JP2015088621A (zh) |
CN (1) | CN104600086A (zh) |
TW (1) | TWI536553B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014002361A1 (ja) | 2012-06-26 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
KR102414038B1 (ko) * | 2015-09-16 | 2022-06-30 | 에스케이하이닉스 주식회사 | 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법 |
WO2019009213A1 (ja) * | 2017-07-07 | 2019-01-10 | ブリルニクスジャパン株式会社 | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
CN108398243B (zh) * | 2018-02-28 | 2021-01-26 | 京东方科技集团股份有限公司 | 显示面板及其检测方法、显示装置 |
KR102642977B1 (ko) | 2019-02-13 | 2024-03-05 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
JP7433863B2 (ja) | 2019-11-27 | 2024-02-20 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3144828B2 (ja) | 1991-06-26 | 2001-03-12 | 株式会社日立製作所 | 固体撮像素子の製造方法 |
JP3759435B2 (ja) | 2001-07-11 | 2006-03-22 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
JP4069670B2 (ja) | 2002-05-14 | 2008-04-02 | 日本ビクター株式会社 | 固体撮像装置とその駆動方法 |
JP5224633B2 (ja) | 2004-03-30 | 2013-07-03 | キヤノン株式会社 | 半導体装置の製造方法 |
KR100570819B1 (ko) * | 2004-07-07 | 2006-04-12 | 삼성전자주식회사 | 전송 게이트 전극들에 중첩하면서 자기정렬된 포토다이오드들을 갖는 이미지 센서의 화소들을 제조하는방법들 및 그에 의해 제조된 이미지 센서의 화소들 |
US7830437B2 (en) * | 2005-05-11 | 2010-11-09 | Aptina Imaging Corp. | High fill factor multi-way shared pixel |
JP2009283649A (ja) | 2008-05-22 | 2009-12-03 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP2010258094A (ja) * | 2009-04-22 | 2010-11-11 | Panasonic Corp | 固体撮像装置 |
JP2012182377A (ja) * | 2011-03-02 | 2012-09-20 | Sony Corp | 固体撮像装置 |
JP5743837B2 (ja) * | 2011-10-07 | 2015-07-01 | キヤノン株式会社 | 光電変換装置、撮像装置および撮像システム |
-
2013
- 2013-10-30 JP JP2013225904A patent/JP2015088621A/ja active Pending
-
2014
- 2014-09-11 US US14/483,464 patent/US9312296B2/en not_active Expired - Fee Related
- 2014-10-02 TW TW103134431A patent/TWI536553B/zh not_active IP Right Cessation
- 2014-10-24 CN CN201410578338.5A patent/CN104600086A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20150115338A1 (en) | 2015-04-30 |
JP2015088621A (ja) | 2015-05-07 |
US9312296B2 (en) | 2016-04-12 |
CN104600086A (zh) | 2015-05-06 |
TW201519424A (zh) | 2015-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11729530B2 (en) | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus | |
US8785993B2 (en) | Solid-state imaging element, manufacturing method, and electronic device | |
JP6406585B2 (ja) | 撮像装置 | |
US8482646B2 (en) | Image sensing device and camera | |
TWI536553B (zh) | 固態影像感測裝置及固態影像感測裝置之製造方法 | |
TW201630173A (zh) | 固體攝像裝置及固體攝像裝置之製造方法 | |
JP2010114275A (ja) | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 | |
JP2016139660A (ja) | 固体撮像装置 | |
JP2004312039A (ja) | 光電変換素子 | |
JP2007134639A (ja) | 光電変換装置及びそれを用いた撮像素子 | |
KR101583904B1 (ko) | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 카메라 모듈 | |
JP2013131516A (ja) | 固体撮像装置、固体撮像装置の製造方法、及び、電子機器 | |
JP2018067615A (ja) | 固体撮像装置及びその製造方法、並びに、電子機器 | |
JP2017054932A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP4779781B2 (ja) | 固体撮像装置とその製造方法 | |
JP2008098255A (ja) | 固体撮像装置 | |
JP6682674B2 (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
TWI525800B (zh) | 固態影像感測裝置及固態影像感測裝置之製造方法 | |
JP2018046089A (ja) | 固体撮像装置及びその製造方法、並びに、電子機器 | |
JP2007123680A (ja) | 固体撮像装置 | |
JP6462550B2 (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP4779575B2 (ja) | 固体撮像素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |