JP2013140975A5 - - Google Patents
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- Publication number
- JP2013140975A5 JP2013140975A5 JP2012283969A JP2012283969A JP2013140975A5 JP 2013140975 A5 JP2013140975 A5 JP 2013140975A5 JP 2012283969 A JP2012283969 A JP 2012283969A JP 2012283969 A JP2012283969 A JP 2012283969A JP 2013140975 A5 JP2013140975 A5 JP 2013140975A5
- Authority
- JP
- Japan
- Prior art keywords
- photodiode array
- epitaxial layer
- conductive vias
- doped
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000000295 complement effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000000945 filler Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 241000047703 Nonion Species 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000007781 pre-processing Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/343,165 | 2012-01-04 | ||
| US13/343,165 US8736008B2 (en) | 2012-01-04 | 2012-01-04 | Photodiode array and methods of fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013140975A JP2013140975A (ja) | 2013-07-18 |
| JP2013140975A5 true JP2013140975A5 (enExample) | 2016-02-12 |
| JP6133055B2 JP6133055B2 (ja) | 2017-05-24 |
Family
ID=48608049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012283969A Active JP6133055B2 (ja) | 2012-01-04 | 2012-12-27 | フォトダイオード・アレイ、検出器及び製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8736008B2 (enExample) |
| JP (1) | JP6133055B2 (enExample) |
| DE (1) | DE102012113168A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8901697B2 (en) * | 2012-03-16 | 2014-12-02 | Analog Devices, Inc. | Integrated circuit having a semiconducting via; an integrated circuit including a sensor, such as a photosensitive device, and a method of making said integrated circuit |
| DE102013206407B3 (de) * | 2013-04-11 | 2014-03-06 | Siemens Aktiengesellschaft | Sensorchip, computertomographischer Detektor diesen aufweisend und Herstellungsverfahren dafür |
| JP6574419B2 (ja) | 2013-11-15 | 2019-09-11 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | フレキシブル基板上の両面有機光検出器 |
| JP2015133408A (ja) | 2014-01-14 | 2015-07-23 | 株式会社島津製作所 | 放射線検出器 |
| JP2018505565A (ja) * | 2014-12-19 | 2018-02-22 | ジーレイ スイッツァーランド エスアー | モノリシックｃｍｏｓ集積ピクセル検出器ならびに様々な用途を含む粒子検出および撮像のためのシステムおよび方法 |
| US9754992B2 (en) | 2015-01-21 | 2017-09-05 | Terapede Systems Inc. | Integrated scintillator grid with photodiodes |
| JP6725231B2 (ja) * | 2015-10-06 | 2020-07-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および電子装置 |
| US10522532B2 (en) * | 2016-05-27 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Through via extending through a group III-V layer |
| WO2017213622A1 (en) * | 2016-06-06 | 2017-12-14 | Terapede Systems Inc. | Integrated scintillator grid with photodiodes |
| KR102635858B1 (ko) * | 2017-01-05 | 2024-02-15 | 삼성전자주식회사 | 이미지 센서 |
| EP3723138A1 (en) | 2019-04-10 | 2020-10-14 | ams International AG | Optoelectronic device, photonic detector and method of producing an optoelectronic device |
| US11874409B2 (en) | 2020-07-06 | 2024-01-16 | Canon Medical Systems Corporation | Correction X-ray detector, X-ray CT apparatus, and detector element determining method |
| WO2024138727A1 (en) * | 2022-12-30 | 2024-07-04 | Shanghai United Imaging Healthcare Co., Ltd. | Photon-counting detectors for detecting radiation rays |
| WO2025036368A1 (zh) * | 2023-08-16 | 2025-02-20 | 上海联影微电子科技有限公司 | 光电二极管及其制造方法、电子元件 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886353A (en) | 1995-04-21 | 1999-03-23 | Thermotrex Corporation | Imaging device |
| US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
| US6667528B2 (en) * | 2002-01-03 | 2003-12-23 | International Business Machines Corporation | Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same |
| GB0201260D0 (en) | 2002-01-21 | 2002-03-06 | Europ Org For Nuclear Research | A sensing and imaging device |
| US7291782B2 (en) * | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
| GB2392307B8 (en) * | 2002-07-26 | 2006-09-20 | Detection Technology Oy | Semiconductor structure for imaging detectors |
| JP4440554B2 (ja) * | 2002-09-24 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体装置 |
| US7214999B2 (en) * | 2003-10-31 | 2007-05-08 | Motorola, Inc. | Integrated photoserver for CMOS imagers |
| US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
| CN101120433B (zh) | 2004-06-04 | 2010-12-08 | 伊利诺伊大学评议会 | 用于制造并组装可印刷半导体元件的方法 |
| WO2006111869A2 (en) | 2005-04-22 | 2006-10-26 | Koninklijke Philips Electronics N.V. | Pet/mr scanner with time-of-flight capability |
| DE102005026242B4 (de) * | 2005-06-07 | 2007-05-03 | Austriamicrosystems Ag | Photodiode mit integrierter Halbleiterschaltung und Verfahren zur Herstellung |
| US7759680B2 (en) | 2005-11-30 | 2010-07-20 | General Electric Company | Thin-film transistor and diode array for an imager panel or the like |
| US7576404B2 (en) * | 2005-12-16 | 2009-08-18 | Icemos Technology Ltd. | Backlit photodiode and method of manufacturing a backlit photodiode |
| US7378309B2 (en) * | 2006-03-15 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Method of fabricating local interconnects on a silicon-germanium 3D CMOS |
| DE602007012854D1 (de) | 2006-04-25 | 2011-04-14 | Koninkl Philips Electronics Nv | Implementierung von lawinenfotodioden in (bi) cmos-verfahren |
| JP2010500766A (ja) * | 2006-08-10 | 2010-01-07 | アイスモス・テクノロジー・リミテッド | ウエハ貫通ビアを備えたフォトダイオードアレイの製造方法 |
| GB2441814B (en) | 2006-09-07 | 2012-04-11 | Detection Technology Oy | Photodiode array output signal multiplexing |
| CN105826345B (zh) | 2007-01-17 | 2018-07-31 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学系统 |
| JP4825778B2 (ja) * | 2007-11-16 | 2011-11-30 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| ITTO20080045A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| US20100108893A1 (en) * | 2008-11-04 | 2010-05-06 | Array Optronix, Inc. | Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports |
| CN102265176B (zh) | 2008-12-22 | 2015-09-30 | 皇家飞利浦电子股份有限公司 | 具有单光子计数能力的cmos成像器 |
| US8409908B2 (en) | 2009-07-30 | 2013-04-02 | General Electric Company | Apparatus for reducing photodiode thermal gain coefficient and method of making same |
| JP2011044717A (ja) * | 2009-08-20 | 2011-03-03 | Icemos Technology Ltd | 直接ウエハ接合貫通孔フォトダイオード |
| US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
| US9097809B2 (en) | 2011-06-30 | 2015-08-04 | Carestream Health, Inc. | Radiographic detector including trap occupancy change monitor and feedback, imaging apparatus and methods using the same |
-
2012
- 2012-01-04 US US13/343,165 patent/US8736008B2/en active Active
- 2012-12-27 JP JP2012283969A patent/JP6133055B2/ja active Active
- 2012-12-28 DE DE102012113168A patent/DE102012113168A1/de not_active Withdrawn
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