JP2019057603A5 - - Google Patents

Download PDF

Info

Publication number
JP2019057603A5
JP2019057603A5 JP2017180736A JP2017180736A JP2019057603A5 JP 2019057603 A5 JP2019057603 A5 JP 2019057603A5 JP 2017180736 A JP2017180736 A JP 2017180736A JP 2017180736 A JP2017180736 A JP 2017180736A JP 2019057603 A5 JP2019057603 A5 JP 2019057603A5
Authority
JP
Japan
Prior art keywords
semiconductor
region
semiconductor region
conductivity type
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017180736A
Other languages
English (en)
Japanese (ja)
Other versions
JP6776205B2 (ja
JP2019057603A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2017180736A priority Critical patent/JP6776205B2/ja
Priority claimed from JP2017180736A external-priority patent/JP6776205B2/ja
Priority to US15/912,711 priority patent/US10546953B2/en
Publication of JP2019057603A publication Critical patent/JP2019057603A/ja
Publication of JP2019057603A5 publication Critical patent/JP2019057603A5/ja
Application granted granted Critical
Publication of JP6776205B2 publication Critical patent/JP6776205B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017180736A 2017-09-20 2017-09-20 半導体装置の製造方法 Active JP6776205B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017180736A JP6776205B2 (ja) 2017-09-20 2017-09-20 半導体装置の製造方法
US15/912,711 US10546953B2 (en) 2017-09-20 2018-03-06 Semiconductor device including an electrode having a part with an inverse tapered shape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017180736A JP6776205B2 (ja) 2017-09-20 2017-09-20 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2019057603A JP2019057603A (ja) 2019-04-11
JP2019057603A5 true JP2019057603A5 (enExample) 2019-09-19
JP6776205B2 JP6776205B2 (ja) 2020-10-28

Family

ID=65721160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017180736A Active JP6776205B2 (ja) 2017-09-20 2017-09-20 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US10546953B2 (enExample)
JP (1) JP6776205B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7319496B2 (ja) * 2020-03-17 2023-08-02 株式会社東芝 半導体装置
US11355630B2 (en) 2020-09-11 2022-06-07 Wolfspeed, Inc. Trench bottom shielding methods and approaches for trenched semiconductor device structures
JP7414677B2 (ja) * 2020-09-15 2024-01-16 株式会社東芝 半導体装置及びその製造方法
JP7387566B2 (ja) * 2020-09-18 2023-11-28 株式会社東芝 半導体装置
US11605717B2 (en) * 2020-12-17 2023-03-14 International Business Machines Corporation Wrapped-around contact for vertical field effect transistor top source-drain
CN116666223B (zh) * 2023-07-28 2023-11-03 江西萨瑞半导体技术有限公司 一种改善sgt阈值电压稳定性的工艺方法及sgt器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551881B1 (en) * 2001-10-01 2003-04-22 Koninklijke Philips Electronics N.V. Self-aligned dual-oxide umosfet device and a method of fabricating same
US7701001B2 (en) * 2002-05-03 2010-04-20 International Rectifier Corporation Short channel trench power MOSFET with low threshold voltage
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7390717B2 (en) * 2004-02-09 2008-06-24 International Rectifier Corporation Trench power MOSFET fabrication using inside/outside spacers
JP2006344760A (ja) * 2005-06-08 2006-12-21 Sharp Corp トレンチ型ｍｏｓｆｅｔ及びその製造方法
US20090272982A1 (en) * 2008-03-03 2009-11-05 Fuji Electric Device Technology Co., Ltd. Trench gate type semiconductor device and method of producing the same
JP2012174989A (ja) 2011-02-23 2012-09-10 Toshiba Corp 半導体装置の製造方法
JP2012199468A (ja) * 2011-03-23 2012-10-18 Toshiba Corp 半導体装置の製造方法
JP2013058575A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
JP2013182934A (ja) * 2012-02-29 2013-09-12 Toshiba Corp 半導体装置およびその製造方法
JP5807597B2 (ja) * 2012-03-26 2015-11-10 株式会社デンソー 半導体装置及び半導体装置の製造方法
JP2014033079A (ja) 2012-08-03 2014-02-20 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
KR20140022517A (ko) * 2012-08-13 2014-02-25 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR101792276B1 (ko) * 2012-08-23 2017-11-02 매그나칩 반도체 유한회사 반도체 소자 및 그 소자의 제조 방법
JP2014063852A (ja) 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法
JP2014110402A (ja) * 2012-12-04 2014-06-12 Rohm Co Ltd 半導体装置
JP5831526B2 (ja) * 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
JP6036765B2 (ja) * 2014-08-22 2016-11-30 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6478884B2 (ja) * 2015-09-11 2019-03-06 株式会社東芝 半導体装置
US10505028B2 (en) * 2015-09-16 2019-12-10 Fuji Electric Co., Ltd. Semiconductor device including a shoulder portion and manufacturing method
JP6584966B2 (ja) * 2016-01-12 2019-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機

Similar Documents

Publication Publication Date Title
JP2019057603A5 (enExample)
JP2016532296A5 (enExample)
JP2015035597A5 (enExample)
JP2016534572A5 (enExample)
JP2015135953A5 (enExample)
JP2013175718A5 (enExample)
JP2015156515A5 (ja) 半導体装置の作製方法
JP2019054087A5 (enExample)
JP2016213468A5 (enExample)
JP2012199527A5 (ja) 半導体装置の作製方法
JP2013123041A5 (ja) 半導体装置の作製方法
JP2015529017A5 (enExample)
TW201440118A (zh) 半導體功率元件的製作方法
JP2017212267A5 (ja) 半導体装置
JP2013138187A5 (enExample)
JP2008182055A5 (enExample)
JPWO2021144666A5 (ja) 半導体装置の作製方法
CN104425594B (zh) 鳍式场效应晶体管及其形成方法
JP2013123042A5 (enExample)
JP2009206268A5 (enExample)
JP2009283921A5 (enExample)
JP2012129312A5 (enExample)
JP2014160809A5 (enExample)
JP2014195062A5 (enExample)
CN111312812B (zh) 半导体结构及其形成方法