JP2014143436A - 角錐形状三次元薄膜太陽電池セル - Google Patents
角錐形状三次元薄膜太陽電池セル Download PDFInfo
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- JP2014143436A JP2014143436A JP2014076786A JP2014076786A JP2014143436A JP 2014143436 A JP2014143436 A JP 2014143436A JP 2014076786 A JP2014076786 A JP 2014076786A JP 2014076786 A JP2014076786 A JP 2014076786A JP 2014143436 A JP2014143436 A JP 2014143436A
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- solar cell
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Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02—Details
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
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Abstract
【解決手段】エミッタ接合領域及びドープ・ベース領域を有する複数の角錐形単位セルを含む角錐形状三次元薄膜太陽電池セル基板、エミッタ金属化処理領域、及びベース金属化処理領域を含む、角錐形状三次元薄膜太陽電池セル。任意選択として、角錐形状三次元薄膜太陽電池セルは、光閉じ込め及び変換効率を改善するために後部ミラーに取り付けることができる。
【選択図】図1
Description
h=(√3/2)d
である。
α=2tan−1[(√3×d)/(4H)]
β=2tan−1[d/(2H)]
である。
Shb=[(3√3)/8]×d2
である。
Shp=[(3√3)/8]×d2×√[1+(16/3)×(H/D)2]
である。
Shp/Shb=√[1+(16/3)×(H/D)2]
である。
φ=2tan−1[D/(2H)]
である。
Scb=(πD2)/4
である。
Scp=[(πD2)/4]×√[1+(2H/D)2]
である。
Scp/Scb=√[1+(2H/D)2]
である。
Claims (22)
- 角錐形状の三次元薄膜太陽電池セルにおいて、
エミッタ接合領域及びドープ・ベース領域を含む角錐形状の三次元薄膜太陽電池セル基板と、
エミッタ金属化処理領域と、
ベース金属化処理領域とを含み、
前記角錐形状の三次元薄膜太陽電池セル基板が、複数の角錐形の単位セルを含む、三次元薄膜太陽電池セル。 - 前記エミッタ接合領域及びドープ・ベース領域が、選択的エミッタ接合領域及び選択的ドープ・ベース領域を含む、請求項1に記載された三次元薄膜太陽電池セル。
- 前記エミッタ接合領域が、自己整合エミッタ接合領域を含み、前記ドープ・ベース領域が、自己整合ドープ・ベース領域を含み、前記エミッタ金属化処理領域が、自己整合エミッタ金属化処理領域を含み、前記ベース金属化処理領域が、自己整合ベース金属化処理領域を含む、請求項1に記載された三次元薄膜太陽電池セル。
- 前記角錐形状の三次元薄膜太陽電池セル基板がシリコン基板を含む、請求項1に記載された三次元薄膜太陽電池セル。
- 前記シリコン基板が結晶シリコン基板を含む、請求項4に記載された三次元薄膜太陽電池セル。
- 前記角錐形状の三次元薄膜太陽電池セル基板が、多角形角錐設計を有する角錐形状の三次元薄膜太陽電池セル基板を含む、請求項1に記載された三次元薄膜太陽電池セル。
- 前記多角形角錐設計が六角形角錐設計を含む、請求項7に記載された三次元薄膜太陽電池セル。
- 前記多角形角錐設計が四角形角錐設計を含む、請求項7に記載された三次元薄膜太陽電池セル。
- 前記多角形角錐設計が三角形角錐設計を含む、請求項7に記載された三次元薄膜太陽電池セル。
- 前記多角形角錐設計が直交V溝設計を含む、請求項7に記載された三次元薄膜太陽電池セル。
- 後部ミラーをさらに含む、請求項1に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、一体化された後部ミラーを含む、請求項11に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、分離された後部ミラーを含む、請求項11に記載された三次元薄膜太陽電池セル。
- 角錐形状の三次元薄膜太陽電池セルにおいて、
角錐形状の三次元薄膜太陽電池セル基板を含み、前記角錐形状の三次元薄膜太陽電池セル基板は、複数の角錐形単位セルを含む、三次元薄膜太陽電池セル。 - 後部ミラーをさらに含む、請求項14に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、一体化された後部ミラーを含む、請求項15に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、分離された後部ミラーを含む、請求項15に記載された三次元薄膜太陽電池セル。
- 角錐形状の三次元薄膜太陽電池セルにおいて、
角錐形状の三次元薄膜太陽電池セル基板を含み、前記角錐形状三次元薄膜太陽電池セル基板は、角錐形空洞を有する複数の単位セルを含む、三次元薄膜太陽電池セル。 - 前記角錐形空洞が薄い半導体側壁によって囲まれている、請求項18に記載された三次元薄膜太陽電池セル。
- 後部ミラーをさらに含む、請求項18に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、一体化された後部ミラーを含む、請求項20に記載された三次元薄膜太陽電池セル。
- 前記後部ミラーが、分離された後部ミラーを含む、請求項20に記載された三次元薄膜太陽電池セル。
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US20120012160A1 (en) | 2012-01-19 |
US20150068583A1 (en) | 2015-03-12 |
US20130167904A1 (en) | 2013-07-04 |
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JP5739037B2 (ja) | 2015-06-24 |
US8035027B2 (en) | 2011-10-11 |
US8084684B2 (en) | 2011-12-27 |
US20080210294A1 (en) | 2008-09-04 |
US20120174860A1 (en) | 2012-07-12 |
WO2008045814A2 (en) | 2008-04-17 |
US8847060B2 (en) | 2014-09-30 |
US20150179846A1 (en) | 2015-06-25 |
WO2008045814A3 (en) | 2008-07-03 |
US20170323989A1 (en) | 2017-11-09 |
US9349887B2 (en) | 2016-05-24 |
US20080295887A1 (en) | 2008-12-04 |
US20160035918A9 (en) | 2016-02-04 |
US20090107545A1 (en) | 2009-04-30 |
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