TWI402993B - 光電轉換元件與製造方法 - Google Patents

光電轉換元件與製造方法 Download PDF

Info

Publication number
TWI402993B
TWI402993B TW098106997A TW98106997A TWI402993B TW I402993 B TWI402993 B TW I402993B TW 098106997 A TW098106997 A TW 098106997A TW 98106997 A TW98106997 A TW 98106997A TW I402993 B TWI402993 B TW I402993B
Authority
TW
Taiwan
Prior art keywords
photoelectric conversion
conversion element
layer
active layer
element according
Prior art date
Application number
TW098106997A
Other languages
English (en)
Other versions
TW201034222A (en
Inventor
You Chia Chang
Chun Ti Chen
Jen You Chu
Yu Hsin Yeh
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW098106997A priority Critical patent/TWI402993B/zh
Priority to US12/466,379 priority patent/US20100224242A1/en
Publication of TW201034222A publication Critical patent/TW201034222A/zh
Application granted granted Critical
Publication of TWI402993B publication Critical patent/TWI402993B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Description

光電轉換元件與製造方法
本發明是有關於一種具高光耦合效率的光電轉換元件。
太陽能已漸漸被利用，取代傳統如石油的能源。如果太陽電池全部採用半導體材料來製作，其會造成基板原料嚴重缺乏，價格也會因此升高。另一種太陽電池是以價格低廉的玻璃或陶瓷做為基板，再以鍍膜方式形成薄膜太陽電池。因為薄膜太陽電池沒有基板的限制，又可方便使用於不同建材上，前景相當看好。
陶瓷基板除了價格低廉、耐高溫及極端環境外，本身是陶瓷粉粒燒結而成，所以是一種很好的朗伯反射體(Lambertian reflector)。當光入射到這個表面時，反射光會形成均勻的擴散光，當製作成薄膜太陽電池的基板時，會有效的將入射光擴散開來，降低直接反射的光，而在薄膜內形成擴散光行進，使光線可以有效的停留在薄膜內被材料所吸收，是一個很好的太陽電池基板形式。
陶瓷基板可應用在最常用的薄膜太陽電池，可以適用各種材料的鍍膜，不論是非晶矽、多晶矽、結晶矽、矽鍺、III-V或II-VI(CdTe)族半導體、小分子、高分子、染料敏化或銅銦硒化鎵(copper indium gallium selenide,簡稱CIGS)的鍍膜均可使用。然而，由於其是利用薄膜形式成長以降低材料的使用成本，單純薄膜材料的厚度太薄，光吸收能力遠不如塊材(bulk materials)。又、這些材料在可見光與近紅外光的折射率都相當高，太陽光界面反射的損失(reflectance loss)相當嚴重，所以必須有適合的光耦合(light-in coupling)及光侷限(light trapping)的方法，將太陽光耦合進入薄膜內，並利用結構設計增加光在薄膜內的行程，進而才能有效增加薄膜太陽電池的效率。
圖1繪示傳統平坦表面對太陽光的反射示意圖。參閱圖1，以矽塊材為例，其表面是光滑面。垂直的入射光會有一部分被反射回去，如箭頭所示。其在矽與空氣的介面上的反射損失約為33%。
圖2繪示傳統表面具有倒金字塔的表面結構，其對太陽光的反射示意圖。參閱圖2，目前傳統設計中，效率較高的單晶矽太陽電池採用的結構是採用倒金字塔表面結構。由於倒金字塔表面結構，大部分入射光會經過兩次的反射才離開矽基板。倒金字塔結構可以降低入射光線垂直反射的損失，更使反射的光線再入射到結構表面，藉此增加光線進入到矽晶片內的比率。經過兩次反射後，反射損失可以降低約為11%。
如何設計適合的結構，增加陶瓷基板所製作的薄膜太陽電池的效率是相關業者在研發上需要考慮的問題。
本發明提供一種光電轉換元件以及其製造方法，以至少達到減少反射損失的效果。
本發明提出一種光電轉換元件，包括一基底層與一主動層。主動層設置在基底層上。主動層的一接收光面具有一表面組織結構。表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點。此三個平面相互垂直或近似相互垂直。
本發明提出一種製造光電轉換元件的方法，包括提供一基底層。接著，形成一表面組織結構於基底層上。表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點，該三個平面相互垂直或近似相互垂直。一主動層形成在該表面組織結構上且與表面組織結構共形。
本發明提出一種製造光電轉換元件的方法，包括提供一平坦基底層；形成一主動層在該平坦基底層上；以及形成一表面組織結構於該主動層上。表面組織結構包含重複的多個凹陷單元，每個凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點，該三個平面相互垂直或近似相互垂直。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
太陽能電池為一種光電轉換元件，目的將入射的光能轉變為電能。其效率除了受到內部量子效率的影響外，光子是否能有效到達半導體主動層並被該層吸收亦是影響效率的關鍵。由於半導體多為高折射率材料，其界面反射率高，因此若未賦予合適的光耦合結構，許多能量將因直接反射而損失，無法穿透進入半導體層。
要達到減少入射光的反射損失，如果結構設計能使反射光線再多重複幾次的入射到結構表面，則將能再次降低反射光線的損失。本發明提出角耦(corner cube)結構。角耦結構是利用包括三個相互垂直的面夠成一凹陷單元，可以使入射光反射三次後才循原本方向返回，增加入射到元件內部的光線量。若配合朗伯反射體的陶瓷基板上直接做此結構，再鍍上薄膜太陽電池，可比倒金字塔結構的光耦合效能更佳，進而提昇太陽能電池效率。
以下舉一些實施例來說明本發明，但是本發明不僅限於所舉實施例，且所舉實施例之間可以相互適當結合。
圖3繪示依據本發明一實施例，一種光電轉換元件立體結構示意圖。參閱圖3，本發明藉由形成一表面組織結構增加在表面結構的反射次數，例如增加會有三次反射的機率。光電轉換元件例如包括一主動層100。主動層100有一表面組織結構(textured structure)。表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面102、104、106，在交叉處形成有一凹尖點。此三個平面102、104、106相互垂直或近似相互垂直。此三個面可允許光線發生多次反射，使光線更容易進入主動層11。
另外主動層100的表面組織結構可以配合基底層的製作，其關係會於圖7~9描述。以下先描述表面組織結構的設計以及其例如降低反射損失的機制。
圖4(a)繪示圖3的上視示意圖。圖4(b)繪示圖4(a)的I-I剖面示意圖。參閱圖4(a)與圖4(b)，每一個凹陷單元150是由相互垂直的三個平面102、104、106構成倒三角錐的結構，其交界線110與直角座標的XYZ軸相似，倒三角錐的凹尖點108可以視為座標軸的原點。每一個凹陷單元150的邊線112是在分佈在一平面上。本實施例是將表面組織結構直接製作在的主動層100的接收光表面。
於本實施例，多個重複的凹陷單元150單元，可以採取三角形排列方式，其中每一凹陷單元150由光電轉換元件的正面觀察均為正三角形，各正三角形以最密集的方式完整布滿表面。此排列方式下，若只考慮光耦合結構本身對光線的反射，可使大部分的正入射光線發生3次反射。
圖5繪示依據本發明一實施例，入射光在表面組織結構產生3次反射的光路徑示意圖。參閱圖5，由於三個面是相互垂直，光線正向入射時，全部的反射光會在該三個面各反射一次。在圖5中，XY平面、YZ平面及XZ平面為三個相互垂直的平面。入射光如箭頭所示將在三個面各反射一次，之後延著與入射光相平行的方向出射。三個相互垂直的平面構成一個凹陷單元。多個凹陷單元組成一個陣列且在適當的排列方式下，若只考慮光耦合結構本身對光線的反射，可使大部分的正向入射光線發生3次反射。因此、本發明提出的表面組織結構能夠更有效提昇太陽能電池的光耦合效率。界面的反射損失例如約可以降到4%。
於此，三個平面在較佳狀況是相互垂直，此時凹陷單元不需太深即可有良好的光耦合效果。然而，如果是近似於相互垂直也有其效果。換句話說，三個面之間任兩面的法向量夾角介於60度和120度的範圍仍有實質的效果。
圖6繪示依據本發明一實施例，主動層的表面組織結構示意圖。參閱圖6，主動層的表面組織結構200的凹陷單元例如是以正交的三個交叉平面202、204、206所組成，其共同交叉點就是凹尖點208。由正面來看凹陷單元邊界是正六角形。不同排列方式會有不同效果。若只考慮光耦合結構本身對光線的反射，經過適當的安排，其甚至可以使100%的正入射光線都發生3次反射。
另外，凹陷單元的大小也可依實際需要做調整。只要凹陷單元的大小大於入射光波長的十倍以上，凹陷單元的大小並不影響光線的反射效果。
就製作上來看，要使主動層具有表面組織結構，可以有不同的製作流程，有使得疊層的結構有一些不同。圖7繪示依據本發明一實施例，光電轉換元件的結構示意圖。參閱圖7，本發明的表面組織結構可以先製作在一基板210上。製作的方式例如是採用熱均壓、熱滾壓、雷射、黃光蝕刻等製程技術，先將由凹陷單元構成的陣列結構製作在光電轉換元件的基板210上。接著，以鍍膜或其他方式在基板210上，覆蓋上實際需要的各種膜層，其中包含一主動層212。如此，包含主動層212在內的各膜層，重覆形成於基板210的結構上與表面組織結構共形。因此主動層212的一接收光面也具有相同的表面組織結構。
除了圖7的製作方式，也可採取另一種製作方式。圖8繪示依據本發明一實施例，光電轉換元件的結構示意圖。參閱圖8，基板210可以是平坦的面。另外藉由上述方法或是熱成型、光成型等製程技術先將此結構製作在主動層和基板之間的某一中間層214上。中間層214具有表面組織微結構。藉著以鍍膜或其他方式覆蓋上包含主動層212在內的其他組成膜層，使包含主動層212在內的其他組成膜層與表面組織微結構共形，因此主動層212也具有表面組織微結構。
再另一種製作方式如圖9所示。圖9繪示依據本發明一實施例，光電轉換元件的結構示意圖。參閱圖9，在陶瓷基板210上輔以一層或多層材料，並例如利用前述的製程方法，將表面組織微結構直接製作於主動層212的一個界面上。
換句話說，主動層212的接收光的一面需要製作前述的面組織結構，但是就疊層結構而言，其製作方式無須限制在特定製作流程。
圖10繪示依據本發明一實施例，具有高光耦合效率的光電轉換元件的剖面結構示意圖。參閱圖10，光電轉換元件的一實施例包括一基板300採用陶瓷基板，以模具壓印的方式於製作出本發明提出的角耦結構。陶瓷基板300上沉積有例如二氧化矽的一共形層302，厚度例如為100μm。主動層304，例如厚度為5μm的單晶矽材料，沉積於共形層302上也與其共形。因此主動層304也具有表面組織微結構。共形層302及主動層304都重覆陶瓷基板300的表面組織微結構，其由多個重覆的凹陷單元所組成。每一個凹陷單元包含三個相互垂直的面。每凹陷單元由正面觀察為邊長20μm的正三角形，各正三角形以最密集的方式完整布滿表面。
圖11繪示多種表面組織微結構分別被主動層吸收的能量分佈模擬示意圖。參閱圖11，由圓點構成的曲線是主動層上未製作任何結構所模擬得到的吸光效率對波長反應圖。由三角點構成的曲線是在主動層上製作倒金字塔結構，在相同的材料下模擬所得到的吸光效率對波長反應圖。由交叉點構成的曲線是採用相同的材料，但是製作如圖10的表面組織結構經模擬所得的吸光效率對波長反應圖。
由圖11的結果可以看出，本發明提出的角耦狀的凹陷單元，確實有助於吸收光的能量，也就是減少反射損失。其中原因其一是本發明提高具有3次以上的反射點的比例，因此允許入射光有更多機會進入主動層而被吸收。
圖12(a)繪示如圖4(a)的一種光電轉換元件立體結構上視示意圖。參閱圖12(a)，取一個凹陷單元150如粗線所界定的一個區域，以進行光線追跡的模擬。圖12(b)繪示圖12(a)中一個凹陷單元150，針對正面入射光分析產生兩次的反射與三次的反射的區域。根據本實施例的倒三角錐結構，進入三次反射區域400的光會經過三個面的三次反射後才被反射回去。又、進入二次反射區域402的光經過二個面的兩次反射後就被反射回去。由於多一次界面的反射，主動層就會多一次機會吸收部份的光，因此三次反射區域400的增大會使光吸收率增大。
又，由於凹陷的平面102、104、106對垂直於基底層的入射光而言不是垂直入射，也就是說入射角不是零度。考慮到反射率與入射角的關係，從學理資料顯示，非偏極光在入射角小於60度的反射率大致上相同，入射角大於60度的反射率會急速上升。本發明凹陷的平面102、104、106與正面入射光的入射角是小於60度，因此本發明的表面組織微結構不會造成增加界面反射率。
本發明採用角耦結構當作凹陷單元，可以增加對入射光產生三次以上反射的區域，能有效提升對入射光的吸收。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．主動層
102、104、106．．．平面
108．．．凹尖點
110．．．交界線
112．．．邊線
150．．．凹陷單元
200．．．表面組織結構
202、204、206．．．平面
208．．．凹尖點
300．．．基板
302．．．共形層
304．．．主動層
400．．．三次反射區域
402．．．二次反射區域
圖1繪示平坦表面對太陽光的反射示意圖。
圖2繪示具有倒金字塔的表面結構，其對太陽光的反射示意圖。
圖3繪示依據本發明一實施例，一種光電轉換元件立體結構示意圖。
圖4(a)繪示圖3的上視示意圖。
圖4(b)繪示圖4(a)的I-I剖面示意圖。
圖5繪示依據本發明一實施例，入射光在表面組織結構產生3次反射的光路徑示意圖。
圖6繪示依據本發明一實施例，主動層的表面組織結構示意圖。
圖7~9繪示依據本發明一些實施例，光電轉換元件的結構示意圖。
圖10繪示依據本發明一實施例，具有高光耦合效率的光電轉換元件的剖面結構示意圖。
圖11繪示不同波長下，多種表面組織微結構分別被主動層吸收效率的模擬示意圖。
圖12(a)繪示如圖4(a)的一種光電轉換元件上視示意圖。
圖12(b)繪示圖12(a)中一個凹陷單元，針對正面入射光分析產生兩次的反射與三次的反射的區域示意圖。
100．．．主動層
102、104、106．．．平面

Claims (16)

  1. 一種光電轉換元件，包括：一基底層；以及一主動層，設置在該基底層上，該主動層的一接收光面具有一表面組織結構，其中該表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點，該三個平面相互垂直或近似相互垂直。
  2. 如申請專利範圍第1項所述之光電轉換元件，其中該基底層與該主動層構成太陽能電池或是光偵測器。
  3. 如申請專利範圍第2項所述之光電轉換元件，其中該太陽能電池的材料包括非晶矽、多晶矽、結晶矽、矽鍺、三五族半導體、二六族半導體、有機小分子、有機高分子、染料敏化或銅銦硒化鎵。
  4. 如申請專利範圍第1項所述之光電轉換元件，其中每一個該凹陷單元是一倒三角錐結構。
  5. 如申請專利範圍第1項所述之光電轉換元件，其中每一個該凹陷單元的該三個平面是由一個立方體(cubic)的三個交叉面所構成。
  6. 如申請專利範圍第1項所述之光電轉換元件，其中該些凹陷單元的正面投影為三角形或六角形。
  7. 如申請專利範圍第1項所述之光電轉換元件，其中該基底層具有一表面結構，該主動層是與該表面結構共形以構成該表面組織結構。
  8. 如申請專利範圍第1項所述之光電轉換元件，其中該基底層包括：一平坦基層；以及一內部層，在該平坦基層上，具有一表面結構，其中該主動層是與該表面結構共形以構成該表面組織結構。
  9. 如申請專利範圍第1項所述之光電轉換元件，其中該基底層是一平坦基層，該主動層有一平坦背面，設置在該平坦基層上。
  10. 一種製造光電轉換元件的方法，包括：提供一基底層；形成一表面組織結構於該基底層上，該表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點，該三個平面相互垂直或近似相互垂直；以及形成一主動層，在該表面組織結構上且與該表面組織結構共形。
  11. 如申請專利範圍第10項所述之製造光電轉換元件的方法，其中所形成的每一個該凹陷單元是一倒三角錐結構。
  12. 如申請專利範圍第10項所述之製造光電轉換元件的方法，其中所形成的每一個該凹陷單元的該三個平面是由一個立方體(cubic)的三個交叉面所構成。
  13. 如申請專利範圍第10項所述之製造光電轉換元件的方法，其中在形成該表面組織結構於該基底層上的該步驟中，該表面組織結構是直接在該基底層上。
  14. 如申請專利範圍第10項所述之製造光電轉換元件的方法，其中在形成該表面組織結構於該基底層上的該步驟包括：提供一平坦基層；形成一中間層，具有該表面組織結構；以及將該中間層設置在該平坦基層上，其中該主動層是共形形成於該表面組織結構上。
  15. 一種製造光電轉換元件的方法，包括：提供一平坦基底層；形成一主動層在該平坦基底層上；以及形成一表面組織結構於該主動層上，該表面組織結構包含重複的多個凹陷單元，每個該凹陷單元包含交叉的三個平面，在交叉處形成有一凹尖點，該三個平面相互垂直或近似相互垂直。
  16. 如申請專利範圍第15項所述之製造光電轉換元件的方法，其中所形成的每一個該凹陷單元的該三個平面是一倒三角錐結構或一個立方體的三個交叉面所構成。
TW098106997A 2009-03-04 2009-03-04 光電轉換元件與製造方法 TWI402993B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098106997A TWI402993B (zh) 2009-03-04 2009-03-04 光電轉換元件與製造方法
US12/466,379 US20100224242A1 (en) 2009-03-04 2009-05-14 Photoelectric converting device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098106997A TWI402993B (zh) 2009-03-04 2009-03-04 光電轉換元件與製造方法

Publications (2)

Publication Number Publication Date
TW201034222A TW201034222A (en) 2010-09-16
TWI402993B true TWI402993B (zh) 2013-07-21

Family

ID=42677156

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106997A TWI402993B (zh) 2009-03-04 2009-03-04 光電轉換元件與製造方法

Country Status (2)

Country Link
US (1) US20100224242A1 (zh)
TW (1) TWI402993B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110083718A1 (en) * 2008-07-29 2011-04-14 Wichner Brian D Solar panels for receiving scattered light
US20110203636A1 (en) * 2008-07-29 2011-08-25 Wichner Brian D Solar panels for receiving scattered light
US7939746B2 (en) * 2008-07-29 2011-05-10 Brian Wichner Solar panels for receiving scattered light
US8735791B2 (en) 2010-07-13 2014-05-27 Svv Technology Innovations, Inc. Light harvesting system employing microstructures for efficient light trapping
EP2748833B1 (en) 2011-12-02 2015-01-07 Koninklijke Philips N.V. High-pressure gas discharge lamp
CN102568128A (zh) * 2011-12-08 2012-07-11 华南理工大学 一种无能耗全天候警示灯
US20150056743A1 (en) * 2012-03-12 2015-02-26 Mitsubishi Electric Corporation Manufacturing method of solar cell
TWI490574B (zh) * 2013-04-03 2015-07-01 聚森股份有限公司 發電模組及其導光膜
CN106646692A (zh) * 2016-12-09 2017-05-10 四川云盾光电科技有限公司 一种基于微纳结构的新型高透过率菲涅尔透镜

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127623A (en) * 1998-07-03 2000-10-03 Sharp Kabushiki Kaisha Solar cell and production process therefor
US20050109388A1 (en) * 2003-11-05 2005-05-26 Canon Kabushiki Kaisha Photovoltaic device and manufacturing method thereof
US20080210294A1 (en) * 2006-10-09 2008-09-04 Mehrdad Moslehi Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427839A (en) * 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4536608A (en) * 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
US5081049A (en) * 1988-07-18 1992-01-14 Unisearch Limited Sculpted solar cell surfaces
US5114101A (en) * 1989-09-28 1992-05-19 General Dynamics Corporation/Space Systems Division Modular distributed concentrating collector using power bus to route power to centralized converter
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
DE4343296C2 (de) * 1993-12-17 1996-09-12 Siemens Ag Verfahren zur Herstellung einer Siliziumhalbleiterscheibe mit drei gegeneinander verkippten kreissektorförmigen monokristallinen Bereichen und seine Verwendung
US6858462B2 (en) * 2000-04-11 2005-02-22 Gratings, Inc. Enhanced light absorption of solar cells and photodetectors by diffraction
JP3764843B2 (ja) * 2000-06-06 2006-04-12 シャープ株式会社 太陽電池セル
JP2003069061A (ja) * 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
US7109517B2 (en) * 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
FR2832811B1 (fr) * 2001-11-28 2004-01-30 Saint Gobain Plaque transparente texturee a forte transmission de lumiere
WO2004012257A1 (en) * 2002-07-31 2004-02-05 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
JP2004235274A (ja) * 2003-01-28 2004-08-19 Kyocera Corp 多結晶シリコン基板およびその粗面化法
ATE527571T1 (de) * 2004-04-15 2011-10-15 Univ Boston Optische bauelemente mit texturierten halbleiterschichten
FR2870007B1 (fr) * 2004-05-10 2006-07-14 Saint Gobain Feuille transparente texturee a motifs pyramidaux inclines
US7319189B2 (en) * 2004-10-27 2008-01-15 Universite De Liege Solar concentrator
US7639423B2 (en) * 2005-08-10 2009-12-29 University of Central Florida, Research Foundation, Inc. Direct beam solar lighting system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127623A (en) * 1998-07-03 2000-10-03 Sharp Kabushiki Kaisha Solar cell and production process therefor
US20050109388A1 (en) * 2003-11-05 2005-05-26 Canon Kabushiki Kaisha Photovoltaic device and manufacturing method thereof
US20080210294A1 (en) * 2006-10-09 2008-09-04 Mehrdad Moslehi Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells

Also Published As

Publication number Publication date
US20100224242A1 (en) 2010-09-09
TW201034222A (en) 2010-09-16

Similar Documents

Publication Publication Date Title
TWI402993B (zh) 光電轉換元件與製造方法
KR101443423B1 (ko) 광전지 디바이스
AU2009229329A1 (en) Substrates for photovoltaics
Zeman et al. Advanced light management approaches for thin-film silicon solar cells
US20090293931A1 (en) Asymmetric surface texturing for use in a photovoltaic cell and method of making
CN102074591A (zh) 用于太阳电池吸收增强的复合微纳光子结构及其制法
US9076908B2 (en) Three-dimensional metamaterial device with photovoltaic bristles
CN102347709A (zh) 锥形立体状阵列式太阳能电池发电系统
TWI479669B (zh) 太陽模組高透光與光捕捉封裝結構
Zhou et al. Wafer-scale integration of inverted nanopyramid arrays for advanced light trapping in crystalline silicon thin film solar cells
TWI445194B (zh) 太陽光電模組封裝結構及其製造方法
KR20210025282A (ko) 3차원 투명 태양전지 제조방법
CN101894870B (zh) 光电转换元件及其制造方法
Li et al. Long-term photovoltaic performance of thin-film solar cells with diffractive microlens arrays on glass substrates
CN101872795A (zh) 太阳模块封装结构
CN104157714B (zh) 一种非晶/微晶硅叠层太阳能电池
JP5582488B2 (ja) 薄膜太陽電池用基板およびそれを用いた薄膜太陽電池
CN105355697A (zh) 一种陷光结构和其制作方法以及应用该结构的薄膜太阳能电池
TWI483410B (zh) 太陽能電池、其製造方法及其模組
US20190305165A1 (en) Photovoltaic module
JP5618465B2 (ja) 薄膜太陽電池モジュール
US20180366605A1 (en) Solar power sunroof device having low reflectance and manufacturing method thereof
JP2014236123A (ja) 太陽電池モジュールおよびその製造方法
JPH05206490A (ja) 光電変換装置
TW201327846A (zh) 具有光轉向特徵之光電伏打窗