JP2013008937A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2013008937A
JP2013008937A JP2011241767A JP2011241767A JP2013008937A JP 2013008937 A JP2013008937 A JP 2013008937A JP 2011241767 A JP2011241767 A JP 2011241767A JP 2011241767 A JP2011241767 A JP 2011241767A JP 2013008937 A JP2013008937 A JP 2013008937A
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JP
Japan
Prior art keywords
oxide semiconductor
transistor
memory cell
layer
insulating layer
Prior art date
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Withdrawn
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JP2011241767A
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English (en)
Japanese (ja)
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JP2013008937A5 (enExample
Inventor
Kiyoshi Kato
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011241767A priority Critical patent/JP2013008937A/ja
Publication of JP2013008937A publication Critical patent/JP2013008937A/ja
Publication of JP2013008937A5 publication Critical patent/JP2013008937A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP2011241767A 2010-11-05 2011-11-03 半導体装置 Withdrawn JP2013008937A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011241767A JP2013008937A (ja) 2010-11-05 2011-11-03 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010249111 2010-11-05
JP2010249111 2010-11-05
JP2011113176 2011-05-20
JP2011113176 2011-05-20
JP2011241767A JP2013008937A (ja) 2010-11-05 2011-11-03 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016182699A Division JP6293226B2 (ja) 2010-11-05 2016-09-20 半導体装置

Publications (2)

Publication Number Publication Date
JP2013008937A true JP2013008937A (ja) 2013-01-10
JP2013008937A5 JP2013008937A5 (enExample) 2014-10-09

Family

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Family Applications (2)

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JP2011241767A Withdrawn JP2013008937A (ja) 2010-11-05 2011-11-03 半導体装置
JP2016182699A Expired - Fee Related JP6293226B2 (ja) 2010-11-05 2016-09-20 半導体装置

Family Applications After (1)

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JP2016182699A Expired - Fee Related JP6293226B2 (ja) 2010-11-05 2016-09-20 半導体装置

Country Status (5)

Country Link
US (2) US8896046B2 (enExample)
JP (2) JP2013008937A (enExample)
KR (2) KR102130257B1 (enExample)
TW (2) TWI651832B (enExample)
WO (1) WO2012060253A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016054282A (ja) * 2014-04-10 2016-04-14 株式会社半導体エネルギー研究所 記憶装置、及び半導体装置
WO2016181256A1 (ja) * 2015-05-12 2016-11-17 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器
JPWO2017158465A1 (ja) * 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
JP2021057616A (ja) * 2013-05-16 2021-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2023181189A (ja) * 2019-01-29 2023-12-21 株式会社半導体エネルギー研究所 記憶装置
WO2024194749A1 (ja) * 2023-03-21 2024-09-26 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
TWI657565B (zh) 2011-01-14 2019-04-21 日商半導體能源研究所股份有限公司 半導體記憶裝置
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104584229B (zh) * 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
TWI671910B (zh) * 2012-09-24 2019-09-11 日商半導體能源研究所股份有限公司 半導體裝置
WO2014065389A1 (en) * 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
US9812581B2 (en) * 2013-03-07 2017-11-07 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
DE102014019794B4 (de) * 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI566328B (zh) * 2013-07-29 2017-01-11 高效電源轉換公司 具有用於產生附加構件之多晶矽層的氮化鎵電晶體
US10056371B2 (en) * 2013-08-13 2018-08-21 Macronix International Co., Ltd. Memory structure having array-under-periphery structure
WO2015038369A1 (en) 2013-09-10 2015-03-19 Efficient Power Conversion Corporation High efficiency voltage mode class d topology
KR102092776B1 (ko) * 2013-11-20 2020-03-24 에스케이하이닉스 주식회사 전자 장치
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
CN105097793B (zh) * 2014-04-22 2018-03-16 中芯国际集成电路制造(北京)有限公司 一种集成电路的设计方法和集成电路
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
SG10201912585TA (en) * 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
KR20180019220A (ko) * 2015-06-23 2018-02-23 인텔 코포레이션 적층가능 박막 메모리
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
TWI645541B (zh) * 2016-07-19 2018-12-21 旺宏電子股份有限公司 具有陣列低於周邊結構的記憶體結構
KR102285787B1 (ko) * 2017-03-03 2021-08-04 삼성전자 주식회사 3차원 반도체 소자
CN109509793B (zh) * 2017-09-15 2020-12-01 京东方科技集团股份有限公司 薄膜晶体管、其制造方法及电子装置
US10672912B2 (en) * 2017-10-10 2020-06-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. N-type thin film transistor, manufacturing method thereof and manufacturing method of an OLED display panel
US11296066B2 (en) 2018-08-21 2022-04-05 Samsung Electronics Co., Ltd. Non-volatile memory
KR102547947B1 (ko) * 2018-08-21 2023-06-26 삼성전자주식회사 비휘발성 메모리 장치
US11778806B2 (en) * 2021-07-29 2023-10-03 Micron Technology, Inc. Memory device having 2-transistor vertical memory cell and separate read and write gates

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148763A (ja) * 1988-11-29 1990-06-07 Nec Kyushu Ltd 半導体記憶装置
JPH09191091A (ja) * 1995-12-29 1997-07-22 Lg Semicon Co Ltd 半導体素子及びその製造方法
JPH10255470A (ja) * 1997-03-11 1998-09-25 Hitachi Ltd 半導体記憶装置及びシステム
JP2001274355A (ja) * 2000-01-18 2001-10-05 Hitachi Ltd 半導体記憶装置及びデータ処理装置
JP2002319682A (ja) * 2002-01-04 2002-10-31 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2005322380A (ja) * 2004-04-09 2005-11-17 Toshiba Corp 半導体記憶装置
JP2009135350A (ja) * 2007-12-03 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009164393A (ja) * 2008-01-08 2009-07-23 Canon Inc アモルファス酸化物及び電界効果型トランジスタ
JP2009167087A (ja) * 2007-12-17 2009-07-30 Fujifilm Corp 無機結晶性配向膜及びその製造方法、半導体デバイス
JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6034199B2 (ja) 1980-12-20 1985-08-07 株式会社東芝 半導体記憶装置
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US7633162B2 (en) * 2004-06-21 2009-12-15 Sang-Yun Lee Electronic circuit with embedded memory
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3457278B2 (ja) * 2000-12-04 2003-10-14 株式会社半導体エネルギー研究所 アクティブマトリクス装置およびそれを用いた電子装置
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
KR100571650B1 (ko) * 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
KR100689842B1 (ko) * 2006-01-06 2007-03-08 삼성전자주식회사 강유전체막을 정보저장요소로 채택하는 플래시 메모리소자들 및 그 제조방법들
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5366517B2 (ja) * 2007-12-03 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4709868B2 (ja) 2008-03-17 2011-06-29 株式会社東芝 半導体記憶装置
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148763A (ja) * 1988-11-29 1990-06-07 Nec Kyushu Ltd 半導体記憶装置
JPH09191091A (ja) * 1995-12-29 1997-07-22 Lg Semicon Co Ltd 半導体素子及びその製造方法
JPH10255470A (ja) * 1997-03-11 1998-09-25 Hitachi Ltd 半導体記憶装置及びシステム
JP2001274355A (ja) * 2000-01-18 2001-10-05 Hitachi Ltd 半導体記憶装置及びデータ処理装置
JP2002319682A (ja) * 2002-01-04 2002-10-31 Japan Science & Technology Corp トランジスタ及び半導体装置
JP2005322380A (ja) * 2004-04-09 2005-11-17 Toshiba Corp 半導体記憶装置
JP2009135350A (ja) * 2007-12-03 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009167087A (ja) * 2007-12-17 2009-07-30 Fujifilm Corp 無機結晶性配向膜及びその製造方法、半導体デバイス
JP2009164393A (ja) * 2008-01-08 2009-07-23 Canon Inc アモルファス酸化物及び電界効果型トランジスタ
JP2010141230A (ja) * 2008-12-15 2010-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021057616A (ja) * 2013-05-16 2021-04-08 株式会社半導体エネルギー研究所 半導体装置
JP2016054282A (ja) * 2014-04-10 2016-04-14 株式会社半導体エネルギー研究所 記憶装置、及び半導体装置
WO2016181256A1 (ja) * 2015-05-12 2016-11-17 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器
JPWO2016181256A1 (ja) * 2015-05-12 2018-03-08 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器
JPWO2017158465A1 (ja) * 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
US11094373B2 (en) 2016-03-18 2021-08-17 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor based memory device
JP2023181189A (ja) * 2019-01-29 2023-12-21 株式会社半導体エネルギー研究所 記憶装置
WO2024194749A1 (ja) * 2023-03-21 2024-09-26 株式会社半導体エネルギー研究所 半導体装置

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