JP2012533507A5 - - Google Patents
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- JP2012533507A5 JP2012533507A5 JP2012520815A JP2012520815A JP2012533507A5 JP 2012533507 A5 JP2012533507 A5 JP 2012533507A5 JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012533507 A5 JP2012533507 A5 JP 2012533507A5
- Authority
- JP
- Japan
- Prior art keywords
- coating
- crucible
- composition
- composition comprises
- coating composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 claims description 85
- 239000011248 coating agent Substances 0.000 claims description 81
- 239000008199 coating composition Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000002270 dispersing agent Substances 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 239000004014 plasticizer Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000011230 binding agent Substances 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 12
- 239000002202 Polyethylene glycol Substances 0.000 claims 4
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims 4
- 229920001223 polyethylene glycol Polymers 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims 2
- 238000005520 cutting process Methods 0.000 claims 1
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 8
- 239000002245 particle Substances 0.000 description 3
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22617509P | 2009-07-16 | 2009-07-16 | |
| US22617609P | 2009-07-16 | 2009-07-16 | |
| US22617209P | 2009-07-16 | 2009-07-16 | |
| US61/226,172 | 2009-07-16 | ||
| US61/226,175 | 2009-07-16 | ||
| US61/226,176 | 2009-07-16 | ||
| PCT/US2010/042309 WO2011009062A2 (en) | 2009-07-16 | 2010-07-16 | Coated crucibles and methods for preparing and use thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013149544A Division JP2014012633A (ja) | 2009-07-16 | 2013-07-18 | 被覆坩堝並びに被覆坩堝の作製および使用方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012533507A JP2012533507A (ja) | 2012-12-27 |
| JP2012533507A5 true JP2012533507A5 (enExample) | 2013-08-29 |
Family
ID=42634798
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520815A Pending JP2012533507A (ja) | 2009-07-16 | 2010-07-16 | 被覆坩堝並びに被覆坩堝の作製および使用方法 |
| JP2013149544A Pending JP2014012633A (ja) | 2009-07-16 | 2013-07-18 | 被覆坩堝並びに被覆坩堝の作製および使用方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013149544A Pending JP2014012633A (ja) | 2009-07-16 | 2013-07-18 | 被覆坩堝並びに被覆坩堝の作製および使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US20110177284A1 (enExample) |
| EP (3) | EP2543751A3 (enExample) |
| JP (2) | JP2012533507A (enExample) |
| KR (1) | KR20120090030A (enExample) |
| CN (1) | CN102549201A (enExample) |
| TW (1) | TW201111564A (enExample) |
| WO (1) | WO2011009062A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| JP2011201736A (ja) * | 2010-03-26 | 2011-10-13 | Mitsubishi Materials Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| DE102011004753A1 (de) * | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Verfahren zum Aufreinigen von Silicium |
| US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
| CN102417308A (zh) * | 2011-09-03 | 2012-04-18 | 江西旭阳雷迪高科技股份有限公司 | 一种铸锭用石英坩埚氮化硅涂层免烧工艺 |
| FR2979638A1 (fr) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme |
| US9352389B2 (en) * | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法（一） |
| US8524319B2 (en) * | 2011-11-18 | 2013-09-03 | Memc Electronic Materials, Inc. | Methods for producing crucibles with a reduced amount of bubbles |
| US8857214B2 (en) | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Ｍｅｍｃ新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
| US20130192302A1 (en) * | 2012-02-01 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucibles for holding molten material and methods for producing them and for their use |
| JP6014336B2 (ja) * | 2012-02-28 | 2016-10-25 | シャープ株式会社 | シリコン鋳造用鋳型、シリコン鋳造方法、シリコン材料の製造方法および太陽電池の製造方法 |
| WO2013160236A1 (en) * | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible |
| CN102797042B (zh) * | 2012-09-06 | 2015-06-10 | 张礼强 | 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液 |
| CN103774215B (zh) * | 2012-10-26 | 2016-11-02 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| CN103774209B (zh) * | 2012-10-26 | 2016-06-15 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| FR3003272A1 (fr) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | Creuset |
| TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
| DE102013206993B4 (de) * | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
| CN103288357B (zh) * | 2013-06-20 | 2016-03-30 | 天津英利新能源有限公司 | 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法 |
| CN103526290A (zh) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | 多晶硅铸锭的制备方法 |
| TWI548459B (zh) | 2014-03-12 | 2016-09-11 | 中美矽晶製品股份有限公司 | 坩堝隔絕層的製造方法及其所應用之噴塗裝置 |
| CN104911703A (zh) * | 2014-03-13 | 2015-09-16 | 常州兆晶光能有限公司 | 一种多晶硅铸锭氮化硅涂层坩埚及涂层制备方法 |
| CN104651931A (zh) * | 2014-10-29 | 2015-05-27 | 江苏美科硅能源有限公司 | 一种可控制形核、杂质扩散的多晶铸锭用石英坩埚及其制备方法 |
| DE102015201988A1 (de) * | 2015-02-05 | 2016-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von multikristallinem Silicium |
| CN107400922A (zh) * | 2017-07-18 | 2017-11-28 | 镇江仁德新能源科技有限公司 | 一种石英坩埚涂层及其制备方法和用途 |
| CN107686355A (zh) * | 2017-09-18 | 2018-02-13 | 佛山市高捷工业炉有限公司 | 高强度坩埚的制备方法 |
| CN111918850B (zh) * | 2018-03-29 | 2023-08-18 | 积水化学工业株式会社 | 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法 |
| CN111733453A (zh) * | 2019-03-25 | 2020-10-02 | 中材江苏太阳能新材料有限公司 | 一种多晶硅铸锭用坩埚及其制备方法 |
| JP7761376B2 (ja) | 2020-07-30 | 2025-10-28 | 信越石英株式会社 | 石英ガラスるつぼ |
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-
2010
- 2010-07-16 US US12/837,876 patent/US20110177284A1/en not_active Abandoned
- 2010-07-16 JP JP2012520815A patent/JP2012533507A/ja active Pending
- 2010-07-16 WO PCT/US2010/042309 patent/WO2011009062A2/en not_active Ceased
- 2010-07-16 EP EP12186832.7A patent/EP2543751A3/en not_active Withdrawn
- 2010-07-16 CN CN2010800410006A patent/CN102549201A/zh active Pending
- 2010-07-16 EP EP10737702A patent/EP2454398A2/en not_active Withdrawn
- 2010-07-16 US US12/837,873 patent/US8211965B2/en not_active Expired - Fee Related
- 2010-07-16 EP EP13198884.2A patent/EP2711445A1/en not_active Withdrawn
- 2010-07-16 US US12/837,864 patent/US9458551B2/en active Active
- 2010-07-16 KR KR1020127003982A patent/KR20120090030A/ko not_active Withdrawn
- 2010-07-16 TW TW099123574A patent/TW201111564A/zh unknown
-
2012
- 2012-05-16 US US13/473,347 patent/US8580881B2/en not_active Expired - Fee Related
- 2012-10-09 US US13/648,065 patent/US20130026469A1/en not_active Abandoned
-
2013
- 2013-07-18 JP JP2013149544A patent/JP2014012633A/ja active Pending
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