JP2012533507A - 被覆坩堝並びに被覆坩堝の作製および使用方法 - Google Patents

被覆坩堝並びに被覆坩堝の作製および使用方法 Download PDF

Info

Publication number
JP2012533507A
JP2012533507A JP2012520815A JP2012520815A JP2012533507A JP 2012533507 A JP2012533507 A JP 2012533507A JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012533507 A JP2012533507 A JP 2012533507A
Authority
JP
Japan
Prior art keywords
crucible
coating
composition
weight
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012520815A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012533507A5 (enExample
Inventor
リチャード・ジェイ・フィリップス
スティーブン・エル・キンベル
アディトヤ・デシュパンデ
シー・ガン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Products Singapore Pte Ltd
Original Assignee
SunEdison Products Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Products Singapore Pte Ltd filed Critical SunEdison Products Singapore Pte Ltd
Publication of JP2012533507A publication Critical patent/JP2012533507A/ja
Publication of JP2012533507A5 publication Critical patent/JP2012533507A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/6269Curing of mixtures
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632Organic additives
    • C04B35/634Polymers
    • C04B35/63404Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/6342Polyvinylacetals, e.g. polyvinylbutyral [PVB]
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632Organic additives
    • C04B35/634Polymers
    • C04B35/63448Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/63488Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/04Production of homogeneous polycrystalline material with defined structure from liquids
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225Yttrium oxide or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/721Carbon content
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
JP2012520815A 2009-07-16 2010-07-16 被覆坩堝並びに被覆坩堝の作製および使用方法 Pending JP2012533507A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US22617509P 2009-07-16 2009-07-16
US22617609P 2009-07-16 2009-07-16
US22617209P 2009-07-16 2009-07-16
US61/226,172 2009-07-16
US61/226,175 2009-07-16
US61/226,176 2009-07-16
PCT/US2010/042309 WO2011009062A2 (en) 2009-07-16 2010-07-16 Coated crucibles and methods for preparing and use thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013149544A Division JP2014012633A (ja) 2009-07-16 2013-07-18 被覆坩堝並びに被覆坩堝の作製および使用方法

Publications (2)

Publication Number Publication Date
JP2012533507A true JP2012533507A (ja) 2012-12-27
JP2012533507A5 JP2012533507A5 (enExample) 2013-08-29

Family

ID=42634798

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012520815A Pending JP2012533507A (ja) 2009-07-16 2010-07-16 被覆坩堝並びに被覆坩堝の作製および使用方法
JP2013149544A Pending JP2014012633A (ja) 2009-07-16 2013-07-18 被覆坩堝並びに被覆坩堝の作製および使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013149544A Pending JP2014012633A (ja) 2009-07-16 2013-07-18 被覆坩堝並びに被覆坩堝の作製および使用方法

Country Status (7)

Country Link
US (5) US20110177284A1 (enExample)
EP (3) EP2543751A3 (enExample)
JP (2) JP2012533507A (enExample)
KR (1) KR20120090030A (enExample)
CN (1) CN102549201A (enExample)
TW (1) TW201111564A (enExample)
WO (1) WO2011009062A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018504359A (ja) * 2015-02-05 2018-02-15 ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG 多結晶シリコンの製造方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110177284A1 (en) * 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
JP2011201736A (ja) * 2010-03-26 2011-10-13 Mitsubishi Materials Corp 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット
DE102011004753A1 (de) * 2011-02-25 2012-08-30 Evonik Degussa Gmbh Verfahren zum Aufreinigen von Silicium
US20120267280A1 (en) * 2011-04-25 2012-10-25 Glen Bennett Cook Vessel for molten semiconducting materials and methods of making the same
CN102417308A (zh) * 2011-09-03 2012-04-18 江西旭阳雷迪高科技股份有限公司 一种铸锭用石英坩埚氮化硅涂层免烧工艺
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法(一)
US8524319B2 (en) * 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
US8857214B2 (en) 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
TWI580825B (zh) * 2012-01-27 2017-05-01 Memc新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
US20130192302A1 (en) * 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use
JP6014336B2 (ja) * 2012-02-28 2016-10-25 シャープ株式会社 シリコン鋳造用鋳型、シリコン鋳造方法、シリコン材料の製造方法および太陽電池の製造方法
WO2013160236A1 (en) * 2012-04-24 2013-10-31 Saint-Gobain Ceramic Materials A. S. Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible
CN102797042B (zh) * 2012-09-06 2015-06-10 张礼强 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液
CN103774215B (zh) * 2012-10-26 2016-11-02 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
FR3003272A1 (fr) * 2013-03-14 2014-09-19 Saint Gobain Ct Recherches Creuset
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
DE102013206993B4 (de) * 2013-04-18 2014-12-04 Morgan Advanced Materials Haldenwanger GmbH Verfahren zur Beschichtung von Formkörpern aus Quarzgut
CN103288357B (zh) * 2013-06-20 2016-03-30 天津英利新能源有限公司 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法
CN103526290A (zh) * 2013-10-24 2014-01-22 阿特斯(中国)投资有限公司 多晶硅铸锭的制备方法
TWI548459B (zh) 2014-03-12 2016-09-11 中美矽晶製品股份有限公司 坩堝隔絕層的製造方法及其所應用之噴塗裝置
CN104911703A (zh) * 2014-03-13 2015-09-16 常州兆晶光能有限公司 一种多晶硅铸锭氮化硅涂层坩埚及涂层制备方法
CN104651931A (zh) * 2014-10-29 2015-05-27 江苏美科硅能源有限公司 一种可控制形核、杂质扩散的多晶铸锭用石英坩埚及其制备方法
CN107400922A (zh) * 2017-07-18 2017-11-28 镇江仁德新能源科技有限公司 一种石英坩埚涂层及其制备方法和用途
CN107686355A (zh) * 2017-09-18 2018-02-13 佛山市高捷工业炉有限公司 高强度坩埚的制备方法
CN111918850B (zh) * 2018-03-29 2023-08-18 积水化学工业株式会社 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法
CN111733453A (zh) * 2019-03-25 2020-10-02 中材江苏太阳能新材料有限公司 一种多晶硅铸锭用坩埚及其制备方法
JP7761376B2 (ja) 2020-07-30 2025-10-28 信越石英株式会社 石英ガラスるつぼ

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
JPH09110590A (ja) * 1995-06-14 1997-04-28 Memc Electron Materials Inc 向上した無転位性能のための表面処理ルツボ
JP2002239682A (ja) * 2001-02-09 2002-08-27 Kawasaki Steel Corp 鋳型への皮膜形成方法、鋳型および多結晶シリコンインゴットの製造方法
JP2005104743A (ja) * 2003-09-26 2005-04-21 Kyocera Corp シリコン鋳造用鋳型
JP2006326670A (ja) * 2005-05-30 2006-12-07 Kyocera Corp 離型層の形成方法およびシリコンインゴットの製造方法
JP2007534590A (ja) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー シリコン結晶化用坩堝
WO2008026688A1 (en) * 2006-08-30 2008-03-06 Kyocera Corporation Method of forming mold for silicon ingot production, process for producing substrate for solar cell element, process for producing solar cell element, and mold for silicon ingot production
JP2010280529A (ja) * 2009-06-04 2010-12-16 Covalent Materials Corp 多結晶シリコン製造用ルツボの製造方法

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401227A (en) * 1966-02-09 1968-09-10 Trw Inc Liner for crucibles
US3660075A (en) * 1969-10-16 1972-05-02 Atomic Energy Commission CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
US3619560A (en) * 1969-12-05 1971-11-09 Texas Instruments Inc Self-regulating thermal apparatus and method
DE2038442B1 (de) * 1970-08-01 1972-04-27 Deutsche Edelstahlwerke Ag Tiegelzustellung fuer vakuuminduktions-schmelzoefen
US3751571A (en) * 1972-03-29 1973-08-07 Norton Co Refractory cement lining for coreless induction furnaces
DE2906815A1 (de) * 1979-02-22 1980-09-04 Doerentruper Sand & Thonwerk Induktionstiegelofen und verfahren zu seiner herstellung
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US4429009A (en) * 1981-10-30 1984-01-31 Hughes Aircraft Company Process for surface conversion of vitreous silica to cristobalite
US4400427A (en) * 1981-12-21 1983-08-23 Gte Laboratories Incorporated Sintered silicon nitride ceramic articles having surface layers of controlled composition
KR850007717A (ko) 1984-04-19 1985-12-07 아놀드 하베이 콜 반도체 기판물질의 개량된 게터링(Gettering) 공법
KR870000309B1 (ko) * 1984-05-29 1987-02-26 한국과학기술원 절삭 공구용 질화규소 소결체 및 그의 제조 방법
US4741925A (en) * 1987-09-14 1988-05-03 Gte Products Corporation Method of forming silicon nitride coating
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
CA2016457C (en) * 1989-09-29 2001-12-18 Gary Mats Renlund Moldable ceramic composition and process for fine diameter ceramic fibers
JP3161663B2 (ja) 1994-01-21 2001-04-25 川崎製鉄株式会社 シリコンインゴット鋳造用鋳型
US5416795A (en) * 1994-05-20 1995-05-16 Kaniuk; John A. Quick change crucible for vacuum melting furnace
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
US5503926A (en) * 1995-01-11 1996-04-02 Saint-Gobain/Norton Industrial Ceramics Corporation Hipped silicon nitride having a reduced reaction layer
SE9500297D0 (sv) * 1995-01-27 1995-01-27 Sintercast Ab A sampling device for thermal analysis
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JP2694242B2 (ja) * 1995-12-22 1997-12-24 工業技術院長 高信頼性窒化ケイ素セラミックスとその製造方法
US6750091B1 (en) * 1996-03-01 2004-06-15 Micron Technology Diode formation method
US5914193A (en) * 1996-04-12 1999-06-22 Nikon Corporation Photochromic plastic lens and its method of manufacture
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
US6165425A (en) * 1997-02-06 2000-12-26 Bayer Aktiengesellschaft Melting pot with silicon protective layers, method for applying said layer and the use thereof
DE19908764C2 (de) * 1998-02-20 2002-10-24 Bosch Braking Systems Co Keramikheizeinsätze oder Keramikglühkerzen und Verfahren zu ihrer Herstellung
JP3250149B2 (ja) 1998-02-27 2002-01-28 三菱マテリアル株式会社 シリコンインゴット鋳造用鋳型およびその製造方法
US6475912B1 (en) * 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6350312B1 (en) * 1999-03-15 2002-02-26 Memc Electronic Materials, Inc. Strontium doping of molten silicon for use in crystal growing process
US6491971B2 (en) * 2000-11-15 2002-12-10 G.T. Equipment Technologies, Inc Release coating system for crucibles
JP4086283B2 (ja) * 2002-07-31 2008-05-14 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
US7556048B2 (en) * 2002-11-15 2009-07-07 Agere Systems Inc. In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor
US6939751B2 (en) * 2003-10-22 2005-09-06 International Business Machines Corporation Method and manufacture of thin silicon on insulator (SOI) with recessed channel
WO2005073129A1 (ja) * 2004-01-29 2005-08-11 Kyocera Corporation 鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法
US7497907B2 (en) * 2004-07-23 2009-03-03 Memc Electronic Materials, Inc. Partially devitrified crucible
US20060110609A1 (en) * 2004-11-19 2006-05-25 Eaton Harry E Protective coatings
JP4549953B2 (ja) 2004-12-22 2010-09-22 花王株式会社 塗型剤組成物
WO2006107769A2 (en) * 2005-04-01 2006-10-12 Gt Solar Incorporated Solidification of crystalline silicon from reusable crucible molds
JP2006303010A (ja) * 2005-04-18 2006-11-02 Toshiba Corp 半導体装置およびその製造方法
EP1739209A1 (en) * 2005-07-01 2007-01-03 Vesuvius Crucible Company Crucible for the crystallization of silicon
TWI400369B (zh) * 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
DE102005050593A1 (de) 2005-10-21 2007-04-26 Esk Ceramics Gmbh & Co. Kg Dauerhafte siliciumnitridhaltige Hartbeschichtung
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
WO2007084934A2 (en) * 2006-01-20 2007-07-26 Bp Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US20090314198A1 (en) 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
JP4915563B2 (ja) 2006-09-13 2012-04-11 パナソニック株式会社 窒化ガリウム系単結晶の育成方法およびそれにより得られる窒化ガリウム系単結晶
US7716948B2 (en) * 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same
NO327122B1 (no) 2007-03-26 2009-04-27 Elkem Solar As Beleggingssystem
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
US8062704B2 (en) 2007-08-02 2011-11-22 Motech Americas, Llc Silicon release coating, method of making same, and method of using same
DE102007053284A1 (de) * 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
CN101435105A (zh) * 2008-12-01 2009-05-20 浙江碧晶科技有限公司 低含氧量硅晶体的制备方法
DE102009015236B4 (de) * 2009-04-01 2015-03-05 H.C. Starck Gmbh Tiegel und seine Verwendung
US20110177284A1 (en) * 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
US8987137B2 (en) * 2010-12-16 2015-03-24 Lsi Corporation Method of fabrication of through-substrate vias

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
JPH09110590A (ja) * 1995-06-14 1997-04-28 Memc Electron Materials Inc 向上した無転位性能のための表面処理ルツボ
JP2002239682A (ja) * 2001-02-09 2002-08-27 Kawasaki Steel Corp 鋳型への皮膜形成方法、鋳型および多結晶シリコンインゴットの製造方法
JP2005104743A (ja) * 2003-09-26 2005-04-21 Kyocera Corp シリコン鋳造用鋳型
JP2007534590A (ja) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー シリコン結晶化用坩堝
JP2006326670A (ja) * 2005-05-30 2006-12-07 Kyocera Corp 離型層の形成方法およびシリコンインゴットの製造方法
WO2008026688A1 (en) * 2006-08-30 2008-03-06 Kyocera Corporation Method of forming mold for silicon ingot production, process for producing substrate for solar cell element, process for producing solar cell element, and mold for silicon ingot production
JP2010280529A (ja) * 2009-06-04 2010-12-16 Covalent Materials Corp 多結晶シリコン製造用ルツボの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018504359A (ja) * 2015-02-05 2018-02-15 ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG 多結晶シリコンの製造方法

Also Published As

Publication number Publication date
TW201111564A (en) 2011-04-01
WO2011009062A4 (en) 2011-06-09
EP2711445A1 (en) 2014-03-26
EP2543751A2 (en) 2013-01-09
US20120252950A1 (en) 2012-10-04
JP2014012633A (ja) 2014-01-23
US9458551B2 (en) 2016-10-04
US20110015329A1 (en) 2011-01-20
KR20120090030A (ko) 2012-08-16
US20130026469A1 (en) 2013-01-31
EP2454398A2 (en) 2012-05-23
WO2011009062A2 (en) 2011-01-20
EP2543751A3 (en) 2013-06-26
US8211965B2 (en) 2012-07-03
CN102549201A (zh) 2012-07-04
US8580881B2 (en) 2013-11-12
WO2011009062A3 (en) 2011-03-31
US20110014582A1 (en) 2011-01-20
US20110177284A1 (en) 2011-07-21

Similar Documents

Publication Publication Date Title
JP2012533507A (ja) 被覆坩堝並びに被覆坩堝の作製および使用方法
US6491971B2 (en) Release coating system for crucibles
TWI624429B (zh) Tantalum nitride powder for release agent for mold for casting of polycrystalline ingot, method for producing the same, slurry containing the tantalum nitride powder, mold for casting polycrystalline ingot, method for producing the same, and method for producing polycrystalline ingot using the same
EP2669411B1 (en) Silicon melt contacting member and process for production thereof, and process for production of crystalline silicon
JP5637221B2 (ja) 多結晶シリコンインゴット鋳造用鋳型及びその製造方法並びに多結晶シリコンインゴット鋳造用鋳型の離型材用窒化珪素粉末及びそれを含有したスラリー
JP2012533507A5 (enExample)
JP5526938B2 (ja) アルミニウム多孔質焼結体の製造方法
TWI798177B (zh) 用於生長矽鑄塊的坩堝以及製備用於生長矽鑄塊的坩堝的方法
TW201344135A (zh) 用於容納熔融材料之坩堝及其生產,使用方法
JP6354367B2 (ja) 多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末及びその製造方法、多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末含有スラリー、ならびに多結晶シリコンインゴット鋳造用鋳型及びその製造方法
JP6402726B2 (ja) スラリー用窒化珪素粉末とその製造方法、離型材用窒化珪素粉末スラリーとその製造方法、離型材用窒化珪素粉末、離型材、および多結晶シリコン鋳造用鋳型とその製造方法
TW202402711A (zh) 形成低碳汙染之單晶矽錠之方法及用於該方法之晶座

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130712

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140116

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150120