JP2012533507A - 被覆坩堝並びに被覆坩堝の作製および使用方法 - Google Patents
被覆坩堝並びに被覆坩堝の作製および使用方法 Download PDFInfo
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- JP2012533507A JP2012533507A JP2012520815A JP2012520815A JP2012533507A JP 2012533507 A JP2012533507 A JP 2012533507A JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012520815 A JP2012520815 A JP 2012520815A JP 2012533507 A JP2012533507 A JP 2012533507A
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- crucible
- coating
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- silicon nitride
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 271
- 238000000576 coating method Methods 0.000 claims abstract description 236
- 239000011248 coating agent Substances 0.000 claims abstract description 226
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 133
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 85
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000001301 oxygen Substances 0.000 claims abstract description 56
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000007711 solidification Methods 0.000 claims abstract description 41
- 230000008023 solidification Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 212
- 239000000203 mixture Substances 0.000 claims description 157
- 239000008199 coating composition Substances 0.000 claims description 156
- 239000000377 silicon dioxide Substances 0.000 claims description 104
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 86
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 58
- 238000005245 sintering Methods 0.000 claims description 54
- 239000002270 dispersing agent Substances 0.000 claims description 52
- 239000011230 binding agent Substances 0.000 claims description 50
- 239000003795 chemical substances by application Substances 0.000 claims description 48
- 239000004014 plasticizer Substances 0.000 claims description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 31
- 239000000654 additive Substances 0.000 claims description 30
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 238000011049 filling Methods 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 230000000996 additive effect Effects 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 229920001223 polyethylene glycol Polymers 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 8
- 230000008016 vaporization Effects 0.000 claims description 8
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000010419 fine particle Substances 0.000 claims 6
- 239000000945 filler Substances 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 20
- 239000002245 particle Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- -1 silicon nitrides Chemical class 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
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- 239000002609 medium Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
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- 238000005054 agglomeration Methods 0.000 description 1
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- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C30B11/002—Crucibles or containers for supporting the melt
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Glass Melting And Manufacturing (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22617509P | 2009-07-16 | 2009-07-16 | |
| US22617609P | 2009-07-16 | 2009-07-16 | |
| US22617209P | 2009-07-16 | 2009-07-16 | |
| US61/226,172 | 2009-07-16 | ||
| US61/226,175 | 2009-07-16 | ||
| US61/226,176 | 2009-07-16 | ||
| PCT/US2010/042309 WO2011009062A2 (en) | 2009-07-16 | 2010-07-16 | Coated crucibles and methods for preparing and use thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013149544A Division JP2014012633A (ja) | 2009-07-16 | 2013-07-18 | 被覆坩堝並びに被覆坩堝の作製および使用方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
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| DE102011004753A1 (de) * | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Verfahren zum Aufreinigen von Silicium |
| US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
| CN102417308A (zh) * | 2011-09-03 | 2012-04-18 | 江西旭阳雷迪高科技股份有限公司 | 一种铸锭用石英坩埚氮化硅涂层免烧工艺 |
| FR2979638A1 (fr) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme |
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| CN103774209B (zh) * | 2012-10-26 | 2016-06-15 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| FR3003272A1 (fr) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | Creuset |
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| DE102013206993B4 (de) * | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
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| CN111918850B (zh) * | 2018-03-29 | 2023-08-18 | 积水化学工业株式会社 | 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法 |
| CN111733453A (zh) * | 2019-03-25 | 2020-10-02 | 中材江苏太阳能新材料有限公司 | 一种多晶硅铸锭用坩埚及其制备方法 |
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| TW201111564A (en) | 2011-04-01 |
| WO2011009062A4 (en) | 2011-06-09 |
| EP2711445A1 (en) | 2014-03-26 |
| EP2543751A2 (en) | 2013-01-09 |
| US20120252950A1 (en) | 2012-10-04 |
| JP2014012633A (ja) | 2014-01-23 |
| US9458551B2 (en) | 2016-10-04 |
| US20110015329A1 (en) | 2011-01-20 |
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| US20130026469A1 (en) | 2013-01-31 |
| EP2454398A2 (en) | 2012-05-23 |
| WO2011009062A2 (en) | 2011-01-20 |
| EP2543751A3 (en) | 2013-06-26 |
| US8211965B2 (en) | 2012-07-03 |
| CN102549201A (zh) | 2012-07-04 |
| US8580881B2 (en) | 2013-11-12 |
| WO2011009062A3 (en) | 2011-03-31 |
| US20110014582A1 (en) | 2011-01-20 |
| US20110177284A1 (en) | 2011-07-21 |
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