TW201111564A - Coated crucibles and methods for preparing and use thereof - Google Patents
Coated crucibles and methods for preparing and use thereof Download PDFInfo
- Publication number
- TW201111564A TW201111564A TW099123574A TW99123574A TW201111564A TW 201111564 A TW201111564 A TW 201111564A TW 099123574 A TW099123574 A TW 099123574A TW 99123574 A TW99123574 A TW 99123574A TW 201111564 A TW201111564 A TW 201111564A
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- TW
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- Prior art keywords
- coating
- composition
- crucible
- sidewall
- ingot
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6269—Curing of mixtures
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/6342—Polyvinylacetals, e.g. polyvinylbutyral [PVB]
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/721—Carbon content
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Glass Melting And Manufacturing (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22617509P | 2009-07-16 | 2009-07-16 | |
| US22617609P | 2009-07-16 | 2009-07-16 | |
| US22617209P | 2009-07-16 | 2009-07-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201111564A true TW201111564A (en) | 2011-04-01 |
Family
ID=42634798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099123574A TW201111564A (en) | 2009-07-16 | 2010-07-16 | Coated crucibles and methods for preparing and use thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US20110177284A1 (enExample) |
| EP (3) | EP2543751A3 (enExample) |
| JP (2) | JP2012533507A (enExample) |
| KR (1) | KR20120090030A (enExample) |
| CN (1) | CN102549201A (enExample) |
| TW (1) | TW201111564A (enExample) |
| WO (1) | WO2011009062A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI458863B (zh) * | 2012-02-28 | 2014-11-01 | Sharp Kk | Silicon casting casting, silicon casting method, silicon material and solar cell manufacturing method |
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Memc新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| JP2011201736A (ja) * | 2010-03-26 | 2011-10-13 | Mitsubishi Materials Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| DE102011004753A1 (de) * | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Verfahren zum Aufreinigen von Silicium |
| US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
| CN102417308A (zh) * | 2011-09-03 | 2012-04-18 | 江西旭阳雷迪高科技股份有限公司 | 一种铸锭用石英坩埚氮化硅涂层免烧工艺 |
| FR2979638A1 (fr) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme |
| US9352389B2 (en) * | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法(一) |
| US8524319B2 (en) * | 2011-11-18 | 2013-09-03 | Memc Electronic Materials, Inc. | Methods for producing crucibles with a reduced amount of bubbles |
| US8857214B2 (en) | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
| US20130192302A1 (en) * | 2012-02-01 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucibles for holding molten material and methods for producing them and for their use |
| WO2013160236A1 (en) * | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible |
| CN102797042B (zh) * | 2012-09-06 | 2015-06-10 | 张礼强 | 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液 |
| CN103774215B (zh) * | 2012-10-26 | 2016-11-02 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| CN103774209B (zh) * | 2012-10-26 | 2016-06-15 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| FR3003272A1 (fr) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | Creuset |
| TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
| DE102013206993B4 (de) * | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
| CN103288357B (zh) * | 2013-06-20 | 2016-03-30 | 天津英利新能源有限公司 | 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法 |
| CN103526290A (zh) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | 多晶硅铸锭的制备方法 |
| TWI548459B (zh) | 2014-03-12 | 2016-09-11 | 中美矽晶製品股份有限公司 | 坩堝隔絕層的製造方法及其所應用之噴塗裝置 |
| CN104911703A (zh) * | 2014-03-13 | 2015-09-16 | 常州兆晶光能有限公司 | 一种多晶硅铸锭氮化硅涂层坩埚及涂层制备方法 |
| CN104651931A (zh) * | 2014-10-29 | 2015-05-27 | 江苏美科硅能源有限公司 | 一种可控制形核、杂质扩散的多晶铸锭用石英坩埚及其制备方法 |
| DE102015201988A1 (de) * | 2015-02-05 | 2016-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von multikristallinem Silicium |
| CN107400922A (zh) * | 2017-07-18 | 2017-11-28 | 镇江仁德新能源科技有限公司 | 一种石英坩埚涂层及其制备方法和用途 |
| CN107686355A (zh) * | 2017-09-18 | 2018-02-13 | 佛山市高捷工业炉有限公司 | 高强度坩埚的制备方法 |
| CN111918850B (zh) * | 2018-03-29 | 2023-08-18 | 积水化学工业株式会社 | 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法 |
| CN111733453A (zh) * | 2019-03-25 | 2020-10-02 | 中材江苏太阳能新材料有限公司 | 一种多晶硅铸锭用坩埚及其制备方法 |
| JP7761376B2 (ja) | 2020-07-30 | 2025-10-28 | 信越石英株式会社 | 石英ガラスるつぼ |
Family Cites Families (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3401227A (en) * | 1966-02-09 | 1968-09-10 | Trw Inc | Liner for crucibles |
| US3660075A (en) * | 1969-10-16 | 1972-05-02 | Atomic Energy Commission | CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf |
| DE1957952A1 (de) * | 1969-11-18 | 1971-05-27 | Siemens Ag | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
| US3619560A (en) * | 1969-12-05 | 1971-11-09 | Texas Instruments Inc | Self-regulating thermal apparatus and method |
| DE2038442B1 (de) * | 1970-08-01 | 1972-04-27 | Deutsche Edelstahlwerke Ag | Tiegelzustellung fuer vakuuminduktions-schmelzoefen |
| US3751571A (en) * | 1972-03-29 | 1973-08-07 | Norton Co | Refractory cement lining for coreless induction furnaces |
| DE2906815A1 (de) * | 1979-02-22 | 1980-09-04 | Doerentruper Sand & Thonwerk | Induktionstiegelofen und verfahren zu seiner herstellung |
| US4356211A (en) * | 1980-12-19 | 1982-10-26 | International Business Machines Corporation | Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon |
| US4429009A (en) * | 1981-10-30 | 1984-01-31 | Hughes Aircraft Company | Process for surface conversion of vitreous silica to cristobalite |
| US4400427A (en) * | 1981-12-21 | 1983-08-23 | Gte Laboratories Incorporated | Sintered silicon nitride ceramic articles having surface layers of controlled composition |
| KR850007717A (ko) | 1984-04-19 | 1985-12-07 | 아놀드 하베이 콜 | 반도체 기판물질의 개량된 게터링(Gettering) 공법 |
| KR870000309B1 (ko) * | 1984-05-29 | 1987-02-26 | 한국과학기술원 | 절삭 공구용 질화규소 소결체 및 그의 제조 방법 |
| US4741925A (en) * | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
| US5256594A (en) * | 1989-06-16 | 1993-10-26 | Intel Corporation | Masking technique for depositing gallium arsenide on silicon |
| CA2016457C (en) * | 1989-09-29 | 2001-12-18 | Gary Mats Renlund | Moldable ceramic composition and process for fine diameter ceramic fibers |
| US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
| JP3161663B2 (ja) | 1994-01-21 | 2001-04-25 | 川崎製鉄株式会社 | シリコンインゴット鋳造用鋳型 |
| US5416795A (en) * | 1994-05-20 | 1995-05-16 | Kaniuk; John A. | Quick change crucible for vacuum melting furnace |
| JP2606141B2 (ja) * | 1994-06-16 | 1997-04-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5503926A (en) * | 1995-01-11 | 1996-04-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Hipped silicon nitride having a reduced reaction layer |
| SE9500297D0 (sv) * | 1995-01-27 | 1995-01-27 | Sintercast Ab | A sampling device for thermal analysis |
| US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
| JP2694242B2 (ja) * | 1995-12-22 | 1997-12-24 | 工業技術院長 | 高信頼性窒化ケイ素セラミックスとその製造方法 |
| US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| US5914193A (en) * | 1996-04-12 | 1999-06-22 | Nikon Corporation | Photochromic plastic lens and its method of manufacture |
| JP3325900B2 (ja) * | 1996-10-14 | 2002-09-17 | 川崎製鉄株式会社 | 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法 |
| US6165425A (en) * | 1997-02-06 | 2000-12-26 | Bayer Aktiengesellschaft | Melting pot with silicon protective layers, method for applying said layer and the use thereof |
| DE19908764C2 (de) * | 1998-02-20 | 2002-10-24 | Bosch Braking Systems Co | Keramikheizeinsätze oder Keramikglühkerzen und Verfahren zu ihrer Herstellung |
| JP3250149B2 (ja) | 1998-02-27 | 2002-01-28 | 三菱マテリアル株式会社 | シリコンインゴット鋳造用鋳型およびその製造方法 |
| US6475912B1 (en) * | 1998-06-01 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield |
| US6319313B1 (en) * | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
| US6350312B1 (en) * | 1999-03-15 | 2002-02-26 | Memc Electronic Materials, Inc. | Strontium doping of molten silicon for use in crystal growing process |
| US6491971B2 (en) * | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
| JP2002239682A (ja) * | 2001-02-09 | 2002-08-27 | Kawasaki Steel Corp | 鋳型への皮膜形成方法、鋳型および多結晶シリコンインゴットの製造方法 |
| JP4086283B2 (ja) * | 2002-07-31 | 2008-05-14 | 信越石英株式会社 | シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法 |
| JP3855082B2 (ja) * | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
| US7556048B2 (en) * | 2002-11-15 | 2009-07-07 | Agere Systems Inc. | In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor |
| JP2005104743A (ja) * | 2003-09-26 | 2005-04-21 | Kyocera Corp | シリコン鋳造用鋳型 |
| US6939751B2 (en) * | 2003-10-22 | 2005-09-06 | International Business Machines Corporation | Method and manufacture of thin silicon on insulator (SOI) with recessed channel |
| WO2005073129A1 (ja) * | 2004-01-29 | 2005-08-11 | Kyocera Corporation | 鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法 |
| RU2355832C2 (ru) * | 2004-04-29 | 2009-05-20 | Везувиус Крусибл Компани | Кристаллизатор для кристаллизации кремния |
| US7497907B2 (en) * | 2004-07-23 | 2009-03-03 | Memc Electronic Materials, Inc. | Partially devitrified crucible |
| US20060110609A1 (en) * | 2004-11-19 | 2006-05-25 | Eaton Harry E | Protective coatings |
| JP4549953B2 (ja) | 2004-12-22 | 2010-09-22 | 花王株式会社 | 塗型剤組成物 |
| WO2006107769A2 (en) * | 2005-04-01 | 2006-10-12 | Gt Solar Incorporated | Solidification of crystalline silicon from reusable crucible molds |
| JP2006303010A (ja) * | 2005-04-18 | 2006-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP4624178B2 (ja) * | 2005-05-30 | 2011-02-02 | 京セラ株式会社 | 離型層の形成方法およびシリコンインゴットの製造方法 |
| EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
| TWI400369B (zh) * | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
| DE102005050593A1 (de) | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| WO2007084934A2 (en) * | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
| US20090314198A1 (en) | 2006-06-23 | 2009-12-24 | Rec Scanwafer As | Device and method for production of semiconductor grade silicon |
| JP5153636B2 (ja) * | 2006-08-30 | 2013-02-27 | 京セラ株式会社 | シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法 |
| JP4915563B2 (ja) | 2006-09-13 | 2012-04-11 | パナソニック株式会社 | 窒化ガリウム系単結晶の育成方法およびそれにより得られる窒化ガリウム系単結晶 |
| US7716948B2 (en) * | 2006-12-18 | 2010-05-18 | Heraeus Shin-Etsu America, Inc. | Crucible having a doped upper wall portion and method for making the same |
| NO327122B1 (no) | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
| CN101796226A (zh) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | 由籽晶制造铸造硅的方法 |
| US8062704B2 (en) | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
| DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
| CN101435105A (zh) * | 2008-12-01 | 2009-05-20 | 浙江碧晶科技有限公司 | 低含氧量硅晶体的制备方法 |
| DE102009015236B4 (de) * | 2009-04-01 | 2015-03-05 | H.C. Starck Gmbh | Tiegel und seine Verwendung |
| JP2010280529A (ja) * | 2009-06-04 | 2010-12-16 | Covalent Materials Corp | 多結晶シリコン製造用ルツボの製造方法 |
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| US8987137B2 (en) * | 2010-12-16 | 2015-03-24 | Lsi Corporation | Method of fabrication of through-substrate vias |
-
2010
- 2010-07-16 US US12/837,876 patent/US20110177284A1/en not_active Abandoned
- 2010-07-16 JP JP2012520815A patent/JP2012533507A/ja active Pending
- 2010-07-16 WO PCT/US2010/042309 patent/WO2011009062A2/en not_active Ceased
- 2010-07-16 EP EP12186832.7A patent/EP2543751A3/en not_active Withdrawn
- 2010-07-16 CN CN2010800410006A patent/CN102549201A/zh active Pending
- 2010-07-16 EP EP10737702A patent/EP2454398A2/en not_active Withdrawn
- 2010-07-16 US US12/837,873 patent/US8211965B2/en not_active Expired - Fee Related
- 2010-07-16 EP EP13198884.2A patent/EP2711445A1/en not_active Withdrawn
- 2010-07-16 US US12/837,864 patent/US9458551B2/en active Active
- 2010-07-16 KR KR1020127003982A patent/KR20120090030A/ko not_active Withdrawn
- 2010-07-16 TW TW099123574A patent/TW201111564A/zh unknown
-
2012
- 2012-05-16 US US13/473,347 patent/US8580881B2/en not_active Expired - Fee Related
- 2012-10-09 US US13/648,065 patent/US20130026469A1/en not_active Abandoned
-
2013
- 2013-07-18 JP JP2013149544A patent/JP2014012633A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Memc新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
| TWI458863B (zh) * | 2012-02-28 | 2014-11-01 | Sharp Kk | Silicon casting casting, silicon casting method, silicon material and solar cell manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011009062A4 (en) | 2011-06-09 |
| EP2711445A1 (en) | 2014-03-26 |
| EP2543751A2 (en) | 2013-01-09 |
| US20120252950A1 (en) | 2012-10-04 |
| JP2014012633A (ja) | 2014-01-23 |
| US9458551B2 (en) | 2016-10-04 |
| US20110015329A1 (en) | 2011-01-20 |
| KR20120090030A (ko) | 2012-08-16 |
| JP2012533507A (ja) | 2012-12-27 |
| US20130026469A1 (en) | 2013-01-31 |
| EP2454398A2 (en) | 2012-05-23 |
| WO2011009062A2 (en) | 2011-01-20 |
| EP2543751A3 (en) | 2013-06-26 |
| US8211965B2 (en) | 2012-07-03 |
| CN102549201A (zh) | 2012-07-04 |
| US8580881B2 (en) | 2013-11-12 |
| WO2011009062A3 (en) | 2011-03-31 |
| US20110014582A1 (en) | 2011-01-20 |
| US20110177284A1 (en) | 2011-07-21 |
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