KR20120090030A - 코팅된 도가니 및 그의 제조 방법 및 용도 - Google Patents

코팅된 도가니 및 그의 제조 방법 및 용도 Download PDF

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KR20120090030A
KR20120090030A KR1020127003982A KR20127003982A KR20120090030A KR 20120090030 A KR20120090030 A KR 20120090030A KR 1020127003982 A KR1020127003982 A KR 1020127003982A KR 20127003982 A KR20127003982 A KR 20127003982A KR 20120090030 A KR20120090030 A KR 20120090030A
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crucible
coating
composition
weight
silicon nitride
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리차드 제이. 필립스
스티븐 엘. 킴벨
아디트야 데쉬판데
강 시
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엠이엠씨 싱가포르 피티이. 엘티디.
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  • Silicon Compounds (AREA)
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  • Crucibles And Fluidized-Bed Furnaces (AREA)
KR1020127003982A 2009-07-16 2010-07-16 코팅된 도가니 및 그의 제조 방법 및 용도 Withdrawn KR20120090030A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22617509P 2009-07-16 2009-07-16
US22617609P 2009-07-16 2009-07-16
US22617209P 2009-07-16 2009-07-16
US61/226,172 2009-07-16
US61/226,175 2009-07-16
US61/226,176 2009-07-16

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KR20120090030A true KR20120090030A (ko) 2012-08-16

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US (5) US20110177284A1 (enExample)
EP (3) EP2543751A3 (enExample)
JP (2) JP2012533507A (enExample)
KR (1) KR20120090030A (enExample)
CN (1) CN102549201A (enExample)
TW (1) TW201111564A (enExample)
WO (1) WO2011009062A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110177284A1 (en) * 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
JP2011201736A (ja) * 2010-03-26 2011-10-13 Mitsubishi Materials Corp 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット
DE102011004753A1 (de) * 2011-02-25 2012-08-30 Evonik Degussa Gmbh Verfahren zum Aufreinigen von Silicium
US20120267280A1 (en) * 2011-04-25 2012-10-25 Glen Bennett Cook Vessel for molten semiconducting materials and methods of making the same
CN102417308A (zh) * 2011-09-03 2012-04-18 江西旭阳雷迪高科技股份有限公司 一种铸锭用石英坩埚氮化硅涂层免烧工艺
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法(一)
US8524319B2 (en) * 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
US8857214B2 (en) 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
TWI580825B (zh) * 2012-01-27 2017-05-01 Memc新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
US20130192302A1 (en) * 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use
JP6014336B2 (ja) * 2012-02-28 2016-10-25 シャープ株式会社 シリコン鋳造用鋳型、シリコン鋳造方法、シリコン材料の製造方法および太陽電池の製造方法
WO2013160236A1 (en) * 2012-04-24 2013-10-31 Saint-Gobain Ceramic Materials A. S. Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible
CN102797042B (zh) * 2012-09-06 2015-06-10 张礼强 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液
CN103774215B (zh) * 2012-10-26 2016-11-02 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
FR3003272A1 (fr) * 2013-03-14 2014-09-19 Saint Gobain Ct Recherches Creuset
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
DE102013206993B4 (de) * 2013-04-18 2014-12-04 Morgan Advanced Materials Haldenwanger GmbH Verfahren zur Beschichtung von Formkörpern aus Quarzgut
CN103288357B (zh) * 2013-06-20 2016-03-30 天津英利新能源有限公司 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法
CN103526290A (zh) * 2013-10-24 2014-01-22 阿特斯(中国)投资有限公司 多晶硅铸锭的制备方法
TWI548459B (zh) 2014-03-12 2016-09-11 中美矽晶製品股份有限公司 坩堝隔絕層的製造方法及其所應用之噴塗裝置
CN104911703A (zh) * 2014-03-13 2015-09-16 常州兆晶光能有限公司 一种多晶硅铸锭氮化硅涂层坩埚及涂层制备方法
CN104651931A (zh) * 2014-10-29 2015-05-27 江苏美科硅能源有限公司 一种可控制形核、杂质扩散的多晶铸锭用石英坩埚及其制备方法
DE102015201988A1 (de) * 2015-02-05 2016-08-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von multikristallinem Silicium
CN107400922A (zh) * 2017-07-18 2017-11-28 镇江仁德新能源科技有限公司 一种石英坩埚涂层及其制备方法和用途
CN107686355A (zh) * 2017-09-18 2018-02-13 佛山市高捷工业炉有限公司 高强度坩埚的制备方法
CN111918850B (zh) * 2018-03-29 2023-08-18 积水化学工业株式会社 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法
CN111733453A (zh) * 2019-03-25 2020-10-02 中材江苏太阳能新材料有限公司 一种多晶硅铸锭用坩埚及其制备方法
JP7761376B2 (ja) 2020-07-30 2025-10-28 信越石英株式会社 石英ガラスるつぼ

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401227A (en) * 1966-02-09 1968-09-10 Trw Inc Liner for crucibles
US3660075A (en) * 1969-10-16 1972-05-02 Atomic Energy Commission CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf
DE1957952A1 (de) * 1969-11-18 1971-05-27 Siemens Ag Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren
US3619560A (en) * 1969-12-05 1971-11-09 Texas Instruments Inc Self-regulating thermal apparatus and method
DE2038442B1 (de) * 1970-08-01 1972-04-27 Deutsche Edelstahlwerke Ag Tiegelzustellung fuer vakuuminduktions-schmelzoefen
US3751571A (en) * 1972-03-29 1973-08-07 Norton Co Refractory cement lining for coreless induction furnaces
DE2906815A1 (de) * 1979-02-22 1980-09-04 Doerentruper Sand & Thonwerk Induktionstiegelofen und verfahren zu seiner herstellung
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US4429009A (en) * 1981-10-30 1984-01-31 Hughes Aircraft Company Process for surface conversion of vitreous silica to cristobalite
US4400427A (en) * 1981-12-21 1983-08-23 Gte Laboratories Incorporated Sintered silicon nitride ceramic articles having surface layers of controlled composition
KR850007717A (ko) 1984-04-19 1985-12-07 아놀드 하베이 콜 반도체 기판물질의 개량된 게터링(Gettering) 공법
KR870000309B1 (ko) * 1984-05-29 1987-02-26 한국과학기술원 절삭 공구용 질화규소 소결체 및 그의 제조 방법
US4741925A (en) * 1987-09-14 1988-05-03 Gte Products Corporation Method of forming silicon nitride coating
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
CA2016457C (en) * 1989-09-29 2001-12-18 Gary Mats Renlund Moldable ceramic composition and process for fine diameter ceramic fibers
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
JP3161663B2 (ja) 1994-01-21 2001-04-25 川崎製鉄株式会社 シリコンインゴット鋳造用鋳型
US5416795A (en) * 1994-05-20 1995-05-16 Kaniuk; John A. Quick change crucible for vacuum melting furnace
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
US5503926A (en) * 1995-01-11 1996-04-02 Saint-Gobain/Norton Industrial Ceramics Corporation Hipped silicon nitride having a reduced reaction layer
SE9500297D0 (sv) * 1995-01-27 1995-01-27 Sintercast Ab A sampling device for thermal analysis
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JP2694242B2 (ja) * 1995-12-22 1997-12-24 工業技術院長 高信頼性窒化ケイ素セラミックスとその製造方法
US6750091B1 (en) * 1996-03-01 2004-06-15 Micron Technology Diode formation method
US5914193A (en) * 1996-04-12 1999-06-22 Nikon Corporation Photochromic plastic lens and its method of manufacture
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
US6165425A (en) * 1997-02-06 2000-12-26 Bayer Aktiengesellschaft Melting pot with silicon protective layers, method for applying said layer and the use thereof
DE19908764C2 (de) * 1998-02-20 2002-10-24 Bosch Braking Systems Co Keramikheizeinsätze oder Keramikglühkerzen und Verfahren zu ihrer Herstellung
JP3250149B2 (ja) 1998-02-27 2002-01-28 三菱マテリアル株式会社 シリコンインゴット鋳造用鋳型およびその製造方法
US6475912B1 (en) * 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6350312B1 (en) * 1999-03-15 2002-02-26 Memc Electronic Materials, Inc. Strontium doping of molten silicon for use in crystal growing process
US6491971B2 (en) * 2000-11-15 2002-12-10 G.T. Equipment Technologies, Inc Release coating system for crucibles
JP2002239682A (ja) * 2001-02-09 2002-08-27 Kawasaki Steel Corp 鋳型への皮膜形成方法、鋳型および多結晶シリコンインゴットの製造方法
JP4086283B2 (ja) * 2002-07-31 2008-05-14 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
US7556048B2 (en) * 2002-11-15 2009-07-07 Agere Systems Inc. In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor
JP2005104743A (ja) * 2003-09-26 2005-04-21 Kyocera Corp シリコン鋳造用鋳型
US6939751B2 (en) * 2003-10-22 2005-09-06 International Business Machines Corporation Method and manufacture of thin silicon on insulator (SOI) with recessed channel
WO2005073129A1 (ja) * 2004-01-29 2005-08-11 Kyocera Corporation 鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法
RU2355832C2 (ru) * 2004-04-29 2009-05-20 Везувиус Крусибл Компани Кристаллизатор для кристаллизации кремния
US7497907B2 (en) * 2004-07-23 2009-03-03 Memc Electronic Materials, Inc. Partially devitrified crucible
US20060110609A1 (en) * 2004-11-19 2006-05-25 Eaton Harry E Protective coatings
JP4549953B2 (ja) 2004-12-22 2010-09-22 花王株式会社 塗型剤組成物
WO2006107769A2 (en) * 2005-04-01 2006-10-12 Gt Solar Incorporated Solidification of crystalline silicon from reusable crucible molds
JP2006303010A (ja) * 2005-04-18 2006-11-02 Toshiba Corp 半導体装置およびその製造方法
JP4624178B2 (ja) * 2005-05-30 2011-02-02 京セラ株式会社 離型層の形成方法およびシリコンインゴットの製造方法
EP1739209A1 (en) * 2005-07-01 2007-01-03 Vesuvius Crucible Company Crucible for the crystallization of silicon
TWI400369B (zh) * 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
DE102005050593A1 (de) 2005-10-21 2007-04-26 Esk Ceramics Gmbh & Co. Kg Dauerhafte siliciumnitridhaltige Hartbeschichtung
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
WO2007084934A2 (en) * 2006-01-20 2007-07-26 Bp Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US20090314198A1 (en) 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
JP5153636B2 (ja) * 2006-08-30 2013-02-27 京セラ株式会社 シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法
JP4915563B2 (ja) 2006-09-13 2012-04-11 パナソニック株式会社 窒化ガリウム系単結晶の育成方法およびそれにより得られる窒化ガリウム系単結晶
US7716948B2 (en) * 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same
NO327122B1 (no) 2007-03-26 2009-04-27 Elkem Solar As Beleggingssystem
CN101796226A (zh) * 2007-07-20 2010-08-04 Bp北美公司 由籽晶制造铸造硅的方法
US8062704B2 (en) 2007-08-02 2011-11-22 Motech Americas, Llc Silicon release coating, method of making same, and method of using same
DE102007053284A1 (de) * 2007-11-08 2009-05-20 Esk Ceramics Gmbh & Co. Kg Fest haftende siliciumnitridhaltige Trennschicht
CN101435105A (zh) * 2008-12-01 2009-05-20 浙江碧晶科技有限公司 低含氧量硅晶体的制备方法
DE102009015236B4 (de) * 2009-04-01 2015-03-05 H.C. Starck Gmbh Tiegel und seine Verwendung
JP2010280529A (ja) * 2009-06-04 2010-12-16 Covalent Materials Corp 多結晶シリコン製造用ルツボの製造方法
US20110177284A1 (en) * 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
US8987137B2 (en) * 2010-12-16 2015-03-24 Lsi Corporation Method of fabrication of through-substrate vias

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