KR20120090030A - 코팅된 도가니 및 그의 제조 방법 및 용도 - Google Patents
코팅된 도가니 및 그의 제조 방법 및 용도 Download PDFInfo
- Publication number
- KR20120090030A KR20120090030A KR1020127003982A KR20127003982A KR20120090030A KR 20120090030 A KR20120090030 A KR 20120090030A KR 1020127003982 A KR1020127003982 A KR 1020127003982A KR 20127003982 A KR20127003982 A KR 20127003982A KR 20120090030 A KR20120090030 A KR 20120090030A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- coating
- composition
- weight
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 243
- 238000000576 coating method Methods 0.000 claims abstract description 243
- 239000011248 coating agent Substances 0.000 claims abstract description 227
- 239000000203 mixture Substances 0.000 claims abstract description 170
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 133
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 68
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000001301 oxygen Substances 0.000 claims abstract description 53
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- 238000007711 solidification Methods 0.000 claims abstract description 45
- 230000008023 solidification Effects 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 182
- 239000008199 coating composition Substances 0.000 claims description 138
- 239000000377 silicon dioxide Substances 0.000 claims description 89
- 238000005245 sintering Methods 0.000 claims description 76
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 75
- 239000002270 dispersing agent Substances 0.000 claims description 57
- 239000011230 binding agent Substances 0.000 claims description 53
- 239000003795 chemical substances by application Substances 0.000 claims description 51
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 50
- 239000004014 plasticizer Substances 0.000 claims description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 34
- 239000000654 additive Substances 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 30
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 229920001223 polyethylene glycol Polymers 0.000 claims description 14
- 230000000996 additive effect Effects 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 11
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000002202 Polyethylene glycol Substances 0.000 claims description 8
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 claims description 8
- 238000011068 loading method Methods 0.000 claims description 8
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 7
- 150000001298 alcohols Chemical class 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000011859 microparticle Substances 0.000 claims 4
- 239000000945 filler Substances 0.000 claims 2
- 239000010419 fine particle Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 22
- 239000002609 medium Substances 0.000 description 40
- 238000001035 drying Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- -1 silicon nitrides Chemical class 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000001963 growth medium Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6269—Curing of mixtures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/6342—Polyvinylacetals, e.g. polyvinylbutyral [PVB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/721—Carbon content
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Glass Melting And Manufacturing (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22617509P | 2009-07-16 | 2009-07-16 | |
| US22617609P | 2009-07-16 | 2009-07-16 | |
| US22617209P | 2009-07-16 | 2009-07-16 | |
| US61/226,172 | 2009-07-16 | ||
| US61/226,175 | 2009-07-16 | ||
| US61/226,176 | 2009-07-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120090030A true KR20120090030A (ko) | 2012-08-16 |
Family
ID=42634798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127003982A Withdrawn KR20120090030A (ko) | 2009-07-16 | 2010-07-16 | 코팅된 도가니 및 그의 제조 방법 및 용도 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US20110177284A1 (enExample) |
| EP (3) | EP2543751A3 (enExample) |
| JP (2) | JP2012533507A (enExample) |
| KR (1) | KR20120090030A (enExample) |
| CN (1) | CN102549201A (enExample) |
| TW (1) | TW201111564A (enExample) |
| WO (1) | WO2011009062A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| JP2011201736A (ja) * | 2010-03-26 | 2011-10-13 | Mitsubishi Materials Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| DE102011004753A1 (de) * | 2011-02-25 | 2012-08-30 | Evonik Degussa Gmbh | Verfahren zum Aufreinigen von Silicium |
| US20120267280A1 (en) * | 2011-04-25 | 2012-10-25 | Glen Bennett Cook | Vessel for molten semiconducting materials and methods of making the same |
| CN102417308A (zh) * | 2011-09-03 | 2012-04-18 | 江西旭阳雷迪高科技股份有限公司 | 一种铸锭用石英坩埚氮化硅涂层免烧工艺 |
| FR2979638A1 (fr) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme |
| US9352389B2 (en) * | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法(一) |
| US8524319B2 (en) * | 2011-11-18 | 2013-09-03 | Memc Electronic Materials, Inc. | Methods for producing crucibles with a reduced amount of bubbles |
| US8857214B2 (en) | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Memc新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
| US20130192302A1 (en) * | 2012-02-01 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucibles for holding molten material and methods for producing them and for their use |
| JP6014336B2 (ja) * | 2012-02-28 | 2016-10-25 | シャープ株式会社 | シリコン鋳造用鋳型、シリコン鋳造方法、シリコン材料の製造方法および太陽電池の製造方法 |
| WO2013160236A1 (en) * | 2012-04-24 | 2013-10-31 | Saint-Gobain Ceramic Materials A. S. | Silicon nitride containing crucible and a method of producing the silicon nitride containing crucible |
| CN102797042B (zh) * | 2012-09-06 | 2015-06-10 | 张礼强 | 一种用于熔解晶体硅的坩埚及其制备方法和喷涂液 |
| CN103774215B (zh) * | 2012-10-26 | 2016-11-02 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| CN103774209B (zh) * | 2012-10-26 | 2016-06-15 | 阿特斯(中国)投资有限公司 | 硅铸锭用坩埚及其涂层制备方法 |
| FR3003272A1 (fr) * | 2013-03-14 | 2014-09-19 | Saint Gobain Ct Recherches | Creuset |
| TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
| DE102013206993B4 (de) * | 2013-04-18 | 2014-12-04 | Morgan Advanced Materials Haldenwanger GmbH | Verfahren zur Beschichtung von Formkörpern aus Quarzgut |
| CN103288357B (zh) * | 2013-06-20 | 2016-03-30 | 天津英利新能源有限公司 | 氮化硅溶液及其制备方法、多晶硅铸锭用坩埚及其制备方法 |
| CN103526290A (zh) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | 多晶硅铸锭的制备方法 |
| TWI548459B (zh) | 2014-03-12 | 2016-09-11 | 中美矽晶製品股份有限公司 | 坩堝隔絕層的製造方法及其所應用之噴塗裝置 |
| CN104911703A (zh) * | 2014-03-13 | 2015-09-16 | 常州兆晶光能有限公司 | 一种多晶硅铸锭氮化硅涂层坩埚及涂层制备方法 |
| CN104651931A (zh) * | 2014-10-29 | 2015-05-27 | 江苏美科硅能源有限公司 | 一种可控制形核、杂质扩散的多晶铸锭用石英坩埚及其制备方法 |
| DE102015201988A1 (de) * | 2015-02-05 | 2016-08-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von multikristallinem Silicium |
| CN107400922A (zh) * | 2017-07-18 | 2017-11-28 | 镇江仁德新能源科技有限公司 | 一种石英坩埚涂层及其制备方法和用途 |
| CN107686355A (zh) * | 2017-09-18 | 2018-02-13 | 佛山市高捷工业炉有限公司 | 高强度坩埚的制备方法 |
| CN111918850B (zh) * | 2018-03-29 | 2023-08-18 | 积水化学工业株式会社 | 夹层玻璃用中间膜、夹层玻璃和平视显示器系统的制造方法 |
| CN111733453A (zh) * | 2019-03-25 | 2020-10-02 | 中材江苏太阳能新材料有限公司 | 一种多晶硅铸锭用坩埚及其制备方法 |
| JP7761376B2 (ja) | 2020-07-30 | 2025-10-28 | 信越石英株式会社 | 石英ガラスるつぼ |
Family Cites Families (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3401227A (en) * | 1966-02-09 | 1968-09-10 | Trw Inc | Liner for crucibles |
| US3660075A (en) * | 1969-10-16 | 1972-05-02 | Atomic Energy Commission | CRUCIBLE COATING FOR PREPARATION OF U AND P ALLOYS CONTAINING Zr OR Hf |
| DE1957952A1 (de) * | 1969-11-18 | 1971-05-27 | Siemens Ag | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
| US3619560A (en) * | 1969-12-05 | 1971-11-09 | Texas Instruments Inc | Self-regulating thermal apparatus and method |
| DE2038442B1 (de) * | 1970-08-01 | 1972-04-27 | Deutsche Edelstahlwerke Ag | Tiegelzustellung fuer vakuuminduktions-schmelzoefen |
| US3751571A (en) * | 1972-03-29 | 1973-08-07 | Norton Co | Refractory cement lining for coreless induction furnaces |
| DE2906815A1 (de) * | 1979-02-22 | 1980-09-04 | Doerentruper Sand & Thonwerk | Induktionstiegelofen und verfahren zu seiner herstellung |
| US4356211A (en) * | 1980-12-19 | 1982-10-26 | International Business Machines Corporation | Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon |
| US4429009A (en) * | 1981-10-30 | 1984-01-31 | Hughes Aircraft Company | Process for surface conversion of vitreous silica to cristobalite |
| US4400427A (en) * | 1981-12-21 | 1983-08-23 | Gte Laboratories Incorporated | Sintered silicon nitride ceramic articles having surface layers of controlled composition |
| KR850007717A (ko) | 1984-04-19 | 1985-12-07 | 아놀드 하베이 콜 | 반도체 기판물질의 개량된 게터링(Gettering) 공법 |
| KR870000309B1 (ko) * | 1984-05-29 | 1987-02-26 | 한국과학기술원 | 절삭 공구용 질화규소 소결체 및 그의 제조 방법 |
| US4741925A (en) * | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
| US5256594A (en) * | 1989-06-16 | 1993-10-26 | Intel Corporation | Masking technique for depositing gallium arsenide on silicon |
| CA2016457C (en) * | 1989-09-29 | 2001-12-18 | Gary Mats Renlund | Moldable ceramic composition and process for fine diameter ceramic fibers |
| US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
| JP3161663B2 (ja) | 1994-01-21 | 2001-04-25 | 川崎製鉄株式会社 | シリコンインゴット鋳造用鋳型 |
| US5416795A (en) * | 1994-05-20 | 1995-05-16 | Kaniuk; John A. | Quick change crucible for vacuum melting furnace |
| JP2606141B2 (ja) * | 1994-06-16 | 1997-04-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5503926A (en) * | 1995-01-11 | 1996-04-02 | Saint-Gobain/Norton Industrial Ceramics Corporation | Hipped silicon nitride having a reduced reaction layer |
| SE9500297D0 (sv) * | 1995-01-27 | 1995-01-27 | Sintercast Ab | A sampling device for thermal analysis |
| US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
| JP2694242B2 (ja) * | 1995-12-22 | 1997-12-24 | 工業技術院長 | 高信頼性窒化ケイ素セラミックスとその製造方法 |
| US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| US5914193A (en) * | 1996-04-12 | 1999-06-22 | Nikon Corporation | Photochromic plastic lens and its method of manufacture |
| JP3325900B2 (ja) * | 1996-10-14 | 2002-09-17 | 川崎製鉄株式会社 | 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法 |
| US6165425A (en) * | 1997-02-06 | 2000-12-26 | Bayer Aktiengesellschaft | Melting pot with silicon protective layers, method for applying said layer and the use thereof |
| DE19908764C2 (de) * | 1998-02-20 | 2002-10-24 | Bosch Braking Systems Co | Keramikheizeinsätze oder Keramikglühkerzen und Verfahren zu ihrer Herstellung |
| JP3250149B2 (ja) | 1998-02-27 | 2002-01-28 | 三菱マテリアル株式会社 | シリコンインゴット鋳造用鋳型およびその製造方法 |
| US6475912B1 (en) * | 1998-06-01 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield |
| US6319313B1 (en) * | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
| US6350312B1 (en) * | 1999-03-15 | 2002-02-26 | Memc Electronic Materials, Inc. | Strontium doping of molten silicon for use in crystal growing process |
| US6491971B2 (en) * | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
| JP2002239682A (ja) * | 2001-02-09 | 2002-08-27 | Kawasaki Steel Corp | 鋳型への皮膜形成方法、鋳型および多結晶シリコンインゴットの製造方法 |
| JP4086283B2 (ja) * | 2002-07-31 | 2008-05-14 | 信越石英株式会社 | シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法 |
| JP3855082B2 (ja) * | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
| US7556048B2 (en) * | 2002-11-15 | 2009-07-07 | Agere Systems Inc. | In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor |
| JP2005104743A (ja) * | 2003-09-26 | 2005-04-21 | Kyocera Corp | シリコン鋳造用鋳型 |
| US6939751B2 (en) * | 2003-10-22 | 2005-09-06 | International Business Machines Corporation | Method and manufacture of thin silicon on insulator (SOI) with recessed channel |
| WO2005073129A1 (ja) * | 2004-01-29 | 2005-08-11 | Kyocera Corporation | 鋳型及びその形成方法、並びにその鋳型を用いた多結晶シリコン基板の製造方法 |
| RU2355832C2 (ru) * | 2004-04-29 | 2009-05-20 | Везувиус Крусибл Компани | Кристаллизатор для кристаллизации кремния |
| US7497907B2 (en) * | 2004-07-23 | 2009-03-03 | Memc Electronic Materials, Inc. | Partially devitrified crucible |
| US20060110609A1 (en) * | 2004-11-19 | 2006-05-25 | Eaton Harry E | Protective coatings |
| JP4549953B2 (ja) | 2004-12-22 | 2010-09-22 | 花王株式会社 | 塗型剤組成物 |
| WO2006107769A2 (en) * | 2005-04-01 | 2006-10-12 | Gt Solar Incorporated | Solidification of crystalline silicon from reusable crucible molds |
| JP2006303010A (ja) * | 2005-04-18 | 2006-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP4624178B2 (ja) * | 2005-05-30 | 2011-02-02 | 京セラ株式会社 | 離型層の形成方法およびシリコンインゴットの製造方法 |
| EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
| TWI400369B (zh) * | 2005-10-06 | 2013-07-01 | Vesuvius Crucible Co | 用於矽結晶的坩堝及其製造方法 |
| DE102005050593A1 (de) | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| WO2007084934A2 (en) * | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
| US20090314198A1 (en) | 2006-06-23 | 2009-12-24 | Rec Scanwafer As | Device and method for production of semiconductor grade silicon |
| JP5153636B2 (ja) * | 2006-08-30 | 2013-02-27 | 京セラ株式会社 | シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法 |
| JP4915563B2 (ja) | 2006-09-13 | 2012-04-11 | パナソニック株式会社 | 窒化ガリウム系単結晶の育成方法およびそれにより得られる窒化ガリウム系単結晶 |
| US7716948B2 (en) * | 2006-12-18 | 2010-05-18 | Heraeus Shin-Etsu America, Inc. | Crucible having a doped upper wall portion and method for making the same |
| NO327122B1 (no) | 2007-03-26 | 2009-04-27 | Elkem Solar As | Beleggingssystem |
| CN101796226A (zh) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | 由籽晶制造铸造硅的方法 |
| US8062704B2 (en) | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
| DE102007053284A1 (de) * | 2007-11-08 | 2009-05-20 | Esk Ceramics Gmbh & Co. Kg | Fest haftende siliciumnitridhaltige Trennschicht |
| CN101435105A (zh) * | 2008-12-01 | 2009-05-20 | 浙江碧晶科技有限公司 | 低含氧量硅晶体的制备方法 |
| DE102009015236B4 (de) * | 2009-04-01 | 2015-03-05 | H.C. Starck Gmbh | Tiegel und seine Verwendung |
| JP2010280529A (ja) * | 2009-06-04 | 2010-12-16 | Covalent Materials Corp | 多結晶シリコン製造用ルツボの製造方法 |
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| US8987137B2 (en) * | 2010-12-16 | 2015-03-24 | Lsi Corporation | Method of fabrication of through-substrate vias |
-
2010
- 2010-07-16 US US12/837,876 patent/US20110177284A1/en not_active Abandoned
- 2010-07-16 JP JP2012520815A patent/JP2012533507A/ja active Pending
- 2010-07-16 WO PCT/US2010/042309 patent/WO2011009062A2/en not_active Ceased
- 2010-07-16 EP EP12186832.7A patent/EP2543751A3/en not_active Withdrawn
- 2010-07-16 CN CN2010800410006A patent/CN102549201A/zh active Pending
- 2010-07-16 EP EP10737702A patent/EP2454398A2/en not_active Withdrawn
- 2010-07-16 US US12/837,873 patent/US8211965B2/en not_active Expired - Fee Related
- 2010-07-16 EP EP13198884.2A patent/EP2711445A1/en not_active Withdrawn
- 2010-07-16 US US12/837,864 patent/US9458551B2/en active Active
- 2010-07-16 KR KR1020127003982A patent/KR20120090030A/ko not_active Withdrawn
- 2010-07-16 TW TW099123574A patent/TW201111564A/zh unknown
-
2012
- 2012-05-16 US US13/473,347 patent/US8580881B2/en not_active Expired - Fee Related
- 2012-10-09 US US13/648,065 patent/US20130026469A1/en not_active Abandoned
-
2013
- 2013-07-18 JP JP2013149544A patent/JP2014012633A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW201111564A (en) | 2011-04-01 |
| WO2011009062A4 (en) | 2011-06-09 |
| EP2711445A1 (en) | 2014-03-26 |
| EP2543751A2 (en) | 2013-01-09 |
| US20120252950A1 (en) | 2012-10-04 |
| JP2014012633A (ja) | 2014-01-23 |
| US9458551B2 (en) | 2016-10-04 |
| US20110015329A1 (en) | 2011-01-20 |
| JP2012533507A (ja) | 2012-12-27 |
| US20130026469A1 (en) | 2013-01-31 |
| EP2454398A2 (en) | 2012-05-23 |
| WO2011009062A2 (en) | 2011-01-20 |
| EP2543751A3 (en) | 2013-06-26 |
| US8211965B2 (en) | 2012-07-03 |
| CN102549201A (zh) | 2012-07-04 |
| US8580881B2 (en) | 2013-11-12 |
| WO2011009062A3 (en) | 2011-03-31 |
| US20110014582A1 (en) | 2011-01-20 |
| US20110177284A1 (en) | 2011-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20120090030A (ko) | 코팅된 도가니 및 그의 제조 방법 및 용도 | |
| US6491971B2 (en) | Release coating system for crucibles | |
| CA2624887C (en) | Crucible for the crystallization of silicon and process for making the same | |
| CN103789830B (zh) | 生产多晶硅的装置和方法以及多晶硅的锭和片 | |
| JP2012533507A5 (enExample) | ||
| EP2660200B1 (en) | Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same | |
| EP2660201B1 (en) | Polycrystalline silicon ingot casting mold and method for producing the same, and slurry used for its method | |
| JP2018008870A (ja) | 優れた硬度の窒化ケイ素含有剥離層 | |
| US20130192302A1 (en) | Crucibles for holding molten material and methods for producing them and for their use | |
| US20140182511A1 (en) | Protective coating to prevent reaction between graphite susceptor and quartz crucible | |
| US20020076501A1 (en) | Crucible coating system | |
| JP6218780B2 (ja) | シリコンブロック、該シリコンブロックを製造する方法、該方法を実施するのに適した透明又は不透明な溶融シリカのルツボ及び該ルツボの製造方法 | |
| JP6402726B2 (ja) | スラリー用窒化珪素粉末とその製造方法、離型材用窒化珪素粉末スラリーとその製造方法、離型材用窒化珪素粉末、離型材、および多結晶シリコン鋳造用鋳型とその製造方法 | |
| TWI534305B (zh) | 用於製造結晶矽錠的裝置(一) | |
| JP5846987B2 (ja) | シリコン結晶インゴット製造用離型材およびシリコン結晶インゴット製造用離型材の形成方法 | |
| EP2738141A1 (en) | Polysilicon receptacle | |
| JP2025518243A (ja) | 炭素汚染を低減した単結晶シリコンインゴットの形成方法およびそのような方法で使用するサセプタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20120215 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |