JP2011512037A - エミッタ層成形のためのシステムおよび方法 - Google Patents

エミッタ層成形のためのシステムおよび方法 Download PDF

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JP2011512037A
JP2011512037A JP2010546060A JP2010546060A JP2011512037A JP 2011512037 A JP2011512037 A JP 2011512037A JP 2010546060 A JP2010546060 A JP 2010546060A JP 2010546060 A JP2010546060 A JP 2010546060A JP 2011512037 A JP2011512037 A JP 2011512037A
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emitter
led
geometric configuration
area
substrate
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JP2011512037A5 (enExample
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ダング ティー． デュオン，
ポール エヌ． ウィンバーグ，
マシュー アール． トーマス，
エリオット エム． ピッカーリング，
ムハマド カイザー，
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イルミテックス， インコーポレイテッド
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Publication of JP2011512037A5 publication Critical patent/JP2011512037A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2010546060A 2008-02-08 2009-02-06 エミッタ層成形のためのシステムおよび方法 Withdrawn JP2011512037A (ja)

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US2735408P 2008-02-08 2008-02-08
US4996408P 2008-05-02 2008-05-02
PCT/US2009/033429 WO2009100358A1 (en) 2008-02-08 2009-02-06 System and method for emitter layer shaping

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JP2011512037A true JP2011512037A (ja) 2011-04-14
JP2011512037A5 JP2011512037A5 (enExample) 2011-06-16

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US (2) US7829358B2 (enExample)
EP (1) EP2240968A1 (enExample)
JP (1) JP2011512037A (enExample)
KR (1) KR20100122485A (enExample)
CN (1) CN101939849A (enExample)
TW (1) TW200941773A (enExample)
WO (1) WO2009100358A1 (enExample)

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JP2019129226A (ja) * 2018-01-24 2019-08-01 シャープ株式会社 マイクロｌｅｄ素子、画像表示素子、及び画像表示素子の製造方法
JP2023554092A (ja) * 2020-12-17 2023-12-26 アルディア アキシャル３次元発光ダイオードを有する光電子デバイス
JP7455267B1 (ja) 2022-10-28 2024-03-25 Ｄｏｗａエレクトロニクス株式会社 紫外線発光素子及びその製造方法

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EP2240968A1 (en) 2010-10-20
US8263993B2 (en) 2012-09-11
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US20100270560A1 (en) 2010-10-28

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