JP2011509231A5 - - Google Patents

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JP2011509231A5
JP2011509231A5 JP2010540956A JP2010540956A JP2011509231A5 JP 2011509231 A5 JP2011509231 A5 JP 2011509231A5 JP 2010540956 A JP2010540956 A JP 2010540956A JP 2010540956 A JP2010540956 A JP 2010540956A JP 2011509231 A5 JP2011509231 A5 JP 2011509231A5
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fragment
gan
iii nitride
group iii
temperature
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JP2011509231A (ja
JP5241855B2 (ja
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JP2010540956A 2008-02-25 2009-02-25 Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ Active JP5241855B2 (ja)

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US6711708P 2008-02-25 2008-02-25
US61/067,117 2008-02-25
PCT/US2009/035140 WO2009108700A1 (en) 2008-02-25 2009-02-25 Method for producing group iii nitride wafers and group iii nitride wafers

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JP2013028632A Division JP5657042B2 (ja) 2008-02-25 2013-02-18 Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ

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JP2011509231A JP2011509231A (ja) 2011-03-24
JP2011509231A5 true JP2011509231A5 (cg-RX-API-DMAC7.html) 2012-07-19
JP5241855B2 JP5241855B2 (ja) 2013-07-17

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JP2013028632A Active JP5657042B2 (ja) 2008-02-25 2013-02-18 Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ

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US (2) US9803293B2 (cg-RX-API-DMAC7.html)
EP (1) EP2245218B1 (cg-RX-API-DMAC7.html)
JP (2) JP5241855B2 (cg-RX-API-DMAC7.html)
TW (1) TWI487817B (cg-RX-API-DMAC7.html)
WO (1) WO2009108700A1 (cg-RX-API-DMAC7.html)

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