JP2011258939A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP2011258939A
JP2011258939A JP2011105570A JP2011105570A JP2011258939A JP 2011258939 A JP2011258939 A JP 2011258939A JP 2011105570 A JP2011105570 A JP 2011105570A JP 2011105570 A JP2011105570 A JP 2011105570A JP 2011258939 A JP2011258939 A JP 2011258939A
Authority
JP
Japan
Prior art keywords
insulating film
oxide semiconductor
film
semiconductor film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011105570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011258939A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011105570A priority Critical patent/JP2011258939A/ja
Publication of JP2011258939A publication Critical patent/JP2011258939A/ja
Publication of JP2011258939A5 publication Critical patent/JP2011258939A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Non-Volatile Memory (AREA)
JP2011105570A 2010-05-14 2011-05-10 半導体装置の作製方法 Withdrawn JP2011258939A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011105570A JP2011258939A (ja) 2010-05-14 2011-05-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010112037 2010-05-14
JP2010112037 2010-05-14
JP2011105570A JP2011258939A (ja) 2010-05-14 2011-05-10 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016065102A Division JP6239022B2 (ja) 2010-05-14 2016-03-29 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2011258939A true JP2011258939A (ja) 2011-12-22
JP2011258939A5 JP2011258939A5 (https=) 2014-06-05

Family

ID=44912141

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011105570A Withdrawn JP2011258939A (ja) 2010-05-14 2011-05-10 半導体装置の作製方法
JP2016065102A Expired - Fee Related JP6239022B2 (ja) 2010-05-14 2016-03-29 半導体装置の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016065102A Expired - Fee Related JP6239022B2 (ja) 2010-05-14 2016-03-29 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US8440510B2 (https=)
JP (2) JP2011258939A (https=)
KR (1) KR101806271B1 (https=)
TW (1) TWI525709B (https=)
WO (1) WO2011142467A1 (https=)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175715A (ja) * 2012-01-26 2013-09-05 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2013175713A (ja) * 2012-01-25 2013-09-05 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2013211532A (ja) * 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2013168624A1 (en) * 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013172237A1 (ja) * 2012-05-14 2013-11-21 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
JP2014042005A (ja) * 2012-07-27 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
KR20140052870A (ko) * 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2014103390A (ja) * 2012-10-24 2014-06-05 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR20140135636A (ko) * 2013-05-16 2014-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2015032552A (ja) * 2013-08-06 2015-02-16 常陽工学株式会社 封止装置、封止方法および機能材料デバイス
JP2015035591A (ja) * 2013-07-08 2015-02-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP2015053478A (ja) * 2013-08-07 2015-03-19 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2016157959A (ja) * 2010-05-14 2016-09-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016208023A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2018137450A (ja) * 2012-10-24 2018-08-30 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP2019054293A (ja) * 2012-08-10 2019-04-04 株式会社半導体エネルギー研究所 半導体装置
WO2019107046A1 (ja) * 2017-11-28 2019-06-06 Ａｇｃ株式会社 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット
JP2022162029A (ja) * 2012-02-09 2022-10-21 株式会社半導体エネルギー研究所 半導体装置
JP2022171682A (ja) * 2014-10-28 2022-11-11 株式会社半導体エネルギー研究所 表示装置
JP2022180394A (ja) * 2016-08-23 2022-12-06 株式会社半導体エネルギー研究所 半導体装置
WO2023189489A1 (ja) * 2022-03-30 2023-10-05 株式会社ジャパンディスプレイ 半導体装置
WO2024190115A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001881A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011001822A1 (en) 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102142450B1 (ko) 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011132529A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012002292A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8841664B2 (en) * 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
CN105931967B (zh) 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102108572B1 (ko) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8981367B2 (en) * 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130089419A (ko) * 2012-02-02 2013-08-12 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9219164B2 (en) * 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
JP6272830B2 (ja) 2012-04-24 2018-01-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低エッチング速度のハードマスク膜のための酸素ドーピングを伴うｐｖｄａｌｎ膜
KR20200019269A (ko) 2012-06-29 2020-02-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI596778B (zh) * 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
DE112013006219T5 (de) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
KR102232133B1 (ko) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103500711B (zh) * 2013-10-15 2017-06-06 深圳市华星光电技术有限公司 薄膜晶体管的制造方法
JP6440457B2 (ja) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置
JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9768317B2 (en) * 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6705663B2 (ja) * 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US10147823B2 (en) * 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
JP6004459B1 (ja) * 2015-12-08 2016-10-05 国立大学法人 奈良先端科学技術大学院大学 薄膜トランジスタとその製造方法および前記薄膜トランジスタを有する半導体装置
KR102320483B1 (ko) * 2016-04-08 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6968567B2 (ja) 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10910407B2 (en) * 2017-01-30 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237456A (ja) * 1987-03-26 1988-10-03 Toshiba Corp 半導体装置
JPH10303128A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 成膜方法
JPH10335325A (ja) * 1997-05-29 1998-12-18 Seiko Epson Corp 酸化硅素膜形成方法
JP2008281988A (ja) * 2007-04-09 2008-11-20 Canon Inc 発光装置とその作製方法
US20080299702A1 (en) * 2007-05-28 2008-12-04 Samsung Electronics Co., Ltd. METHOD OF MANUFACTURING ZnO-BASED THIN FILM TRANSISTOR
JP2010016163A (ja) * 2008-07-03 2010-01-21 Sony Corp 薄膜トランジスタおよび表示装置
JP2010062549A (ja) * 2008-08-08 2010-03-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010080952A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2010080947A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2010041686A1 (ja) * 2008-10-08 2010-04-15 ソニー株式会社 薄膜トランジスタおよび表示装置
WO2010047077A1 (ja) * 2008-10-23 2010-04-29 出光興産株式会社 薄膜トランジスタ及びその製造方法

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
JP5177954B2 (ja) * 2006-01-30 2013-04-10 キヤノン株式会社 電界効果型トランジスタ
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP5121254B2 (ja) 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP4727684B2 (ja) 2007-03-27 2011-07-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP4759598B2 (ja) * 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
KR100941850B1 (ko) 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5325446B2 (ja) * 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
JP5430248B2 (ja) 2008-06-24 2014-02-26 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963104B1 (ko) 2008-07-08 2010-06-14 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP2010045263A (ja) * 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
KR20100023151A (ko) 2008-08-21 2010-03-04 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그 제조방법
JP5339825B2 (ja) 2008-09-09 2013-11-13 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5258475B2 (ja) * 2008-09-22 2013-08-07 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
WO2011048959A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
KR102268217B1 (ko) 2010-03-05 2021-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011132529A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106057907B (zh) 2010-04-23 2019-10-22 株式会社半导体能源研究所 半导体装置的制造方法
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011132548A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011132590A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011142467A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237456A (ja) * 1987-03-26 1988-10-03 Toshiba Corp 半導体装置
JPH10303128A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 成膜方法
JPH10335325A (ja) * 1997-05-29 1998-12-18 Seiko Epson Corp 酸化硅素膜形成方法
JP2008281988A (ja) * 2007-04-09 2008-11-20 Canon Inc 発光装置とその作製方法
US20080299702A1 (en) * 2007-05-28 2008-12-04 Samsung Electronics Co., Ltd. METHOD OF MANUFACTURING ZnO-BASED THIN FILM TRANSISTOR
JP2010016163A (ja) * 2008-07-03 2010-01-21 Sony Corp 薄膜トランジスタおよび表示装置
JP2010062549A (ja) * 2008-08-08 2010-03-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010080952A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2010080947A (ja) * 2008-09-01 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2010041686A1 (ja) * 2008-10-08 2010-04-15 ソニー株式会社 薄膜トランジスタおよび表示装置
WO2010047077A1 (ja) * 2008-10-23 2010-04-29 出光興産株式会社 薄膜トランジスタ及びその製造方法

Cited By (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016157959A (ja) * 2010-05-14 2016-09-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2013175713A (ja) * 2012-01-25 2013-09-05 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US10243081B2 (en) 2012-01-25 2019-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10243064B2 (en) 2012-01-26 2019-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013175715A (ja) * 2012-01-26 2013-09-05 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の作製方法
JP2024036394A (ja) * 2012-02-09 2024-03-15 株式会社半導体エネルギー研究所 半導体装置
JP2022162029A (ja) * 2012-02-09 2022-10-21 株式会社半導体エネルギー研究所 半導体装置
JP7743594B2 (ja) 2012-02-09 2025-09-24 株式会社半導体エネルギー研究所 半導体装置
JP2025032250A (ja) * 2012-02-09 2025-03-11 株式会社半導体エネルギー研究所 半導体装置
JP7603179B2 (ja) 2012-02-09 2024-12-19 株式会社半導体エネルギー研究所 半導体装置
JP7427054B2 (ja) 2012-02-09 2024-02-02 株式会社半導体エネルギー研究所 半導体装置
JP2013211532A (ja) * 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
US9711652B2 (en) 2012-05-10 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102173074B1 (ko) * 2012-05-10 2020-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20150018557A (ko) * 2012-05-10 2015-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스
WO2013168624A1 (en) * 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9159837B2 (en) 2012-05-10 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013254950A (ja) * 2012-05-10 2013-12-19 Semiconductor Energy Lab Co Ltd 半導体装置
KR102222438B1 (ko) 2012-05-10 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
KR20200124778A (ko) * 2012-05-10 2020-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US9966475B2 (en) 2012-05-10 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013239531A (ja) * 2012-05-14 2013-11-28 Fujifilm Corp 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
TWI575754B (zh) * 2012-05-14 2017-03-21 富士軟片股份有限公司 薄膜電晶體及其製造方法、顯示裝置、影像感測器、ｘ線感測器及ｘ線數位攝影裝置
KR101687468B1 (ko) * 2012-05-14 2016-12-19 후지필름 가부시키가이샤 박막 트랜지스터 및 그 제조 방법, 표시 장치, 이미지 센서, x 선 센서 그리고 x 선 디지털 촬영 장치
KR20140146185A (ko) * 2012-05-14 2014-12-24 후지필름 가부시키가이샤 박막 트랜지스터 및 그 제조 방법, 표시 장치, 이미지 센서, x 선 센서 그리고 x 선 디지털 촬영 장치
WO2013172237A1 (ja) * 2012-05-14 2013-11-21 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置
US9793295B2 (en) 2012-07-27 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10141337B2 (en) 2012-07-27 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014042005A (ja) * 2012-07-27 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2019054293A (ja) * 2012-08-10 2019-04-04 株式会社半導体エネルギー研究所 半導体装置
US10361291B2 (en) 2012-10-24 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9997639B2 (en) 2012-10-24 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12495619B2 (en) 2012-10-24 2025-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20140052870A (ko) * 2012-10-24 2014-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10516062B2 (en) 2012-10-24 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2020053687A (ja) * 2012-10-24 2020-04-02 株式会社半導体エネルギー研究所 表示装置
JP2014103390A (ja) * 2012-10-24 2014-06-05 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US10749015B2 (en) 2012-10-24 2020-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2018137450A (ja) * 2012-10-24 2018-08-30 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US11824105B2 (en) 2012-10-24 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11355648B2 (en) 2012-10-24 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2022002311A (ja) * 2012-10-24 2022-01-06 株式会社半導体エネルギー研究所 表示装置
CN108649066A (zh) * 2012-10-24 2018-10-12 株式会社半导体能源研究所 半导体装置及其制造方法
KR102279459B1 (ko) * 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US11152494B2 (en) 2012-10-24 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102220810B1 (ko) * 2013-05-16 2021-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20140135636A (ko) * 2013-05-16 2014-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2015035591A (ja) * 2013-07-08 2015-02-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US10074733B2 (en) 2013-07-08 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2015032552A (ja) * 2013-08-06 2015-02-16 常陽工学株式会社 封止装置、封止方法および機能材料デバイス
JP2015053478A (ja) * 2013-08-07 2015-03-19 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US10699904B2 (en) 2013-08-07 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US11824068B2 (en) 2014-10-28 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
JP2022171682A (ja) * 2014-10-28 2022-11-11 株式会社半導体エネルギー研究所 表示装置
JP7495964B2 (ja) 2014-10-28 2024-06-05 株式会社半導体エネルギー研究所 表示装置
US12230647B2 (en) 2014-10-28 2025-02-18 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
US11646378B2 (en) 2015-04-15 2023-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016208023A (ja) * 2015-04-15 2016-12-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US10923600B2 (en) 2015-04-15 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12191399B2 (en) 2015-04-15 2025-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP7411746B2 (ja) 2016-08-23 2024-01-11 株式会社半導体エネルギー研究所 半導体装置
JP2022180394A (ja) * 2016-08-23 2022-12-06 株式会社半導体エネルギー研究所 半導体装置
WO2019107046A1 (ja) * 2017-11-28 2019-06-06 Ａｇｃ株式会社 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット
WO2023189489A1 (ja) * 2022-03-30 2023-10-05 株式会社ジャパンディスプレイ 半導体装置
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
WO2024190115A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2011142467A1 (en) 2011-11-17
TWI525709B (zh) 2016-03-11
US8440510B2 (en) 2013-05-14
KR101806271B1 (ko) 2017-12-07
JP6239022B2 (ja) 2017-11-29
TW201203392A (en) 2012-01-16
KR20130058021A (ko) 2013-06-03
US20110281394A1 (en) 2011-11-17
JP2016157959A (ja) 2016-09-01

Similar Documents

Publication Publication Date Title
JP7758805B2 (ja) 半導体装置
JP6342053B2 (ja) 半導体装置の作製方法
JP6239022B2 (ja) 半導体装置の作製方法
JP6306674B2 (ja) 半導体装置の作製方法
JP5844993B2 (ja) 半導体装置の作製方法
JP5871359B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140422

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140422

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150312

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150331

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150511

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160106

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20160330