JP2011254080A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP2011254080A JP2011254080A JP2011123165A JP2011123165A JP2011254080A JP 2011254080 A JP2011254080 A JP 2011254080A JP 2011123165 A JP2011123165 A JP 2011123165A JP 2011123165 A JP2011123165 A JP 2011123165A JP 2011254080 A JP2011254080 A JP 2011254080A
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- Prior art keywords
- light emitting
- reflective cup
- emitting device
- emitting element
- cup
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- 239000000463 material Substances 0.000 claims description 27
- 239000003566 sealing material Substances 0.000 claims description 8
- 238000002845 discoloration Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 41
- 239000004065 semiconductor Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000004954 Polyphthalamide Substances 0.000 description 6
- 229920006375 polyphtalamide Polymers 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 239000006089 photosensitive glass Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/58—Optical field-shaping elements
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
【解決手段】本発明の発光素子パッケージは、側面及び底部からなるキャビティを有するボディーと、前記キャビティの底部に互いに離隔して配置される第1反射カップと第2反射カップと、前記第1反射カップの内部に配置される第1発光素子、及び前記第2反射カップの内部に配置される第2発光素子と、を含む。
【選択図】図1
Description
前記第1反射カップ及び前記第2反射カップは、前記ボディーのキャビティの底部から陥没した構造を有することができる。
前記第1反射カップ、前記第2反射カップ、及び前記連結部のそれぞれの、少なくとも一部分は前記ボディーを貫通して露出されることができる。
前記ボディーのキャビティの底部に前記第1反射カップ及び前記第2反射カップと離隔して配置され、前記ボディーと異なる材質である連結部を含むことができる。
前記第1発光素子と前記第2発光素子は、前記連結部によって電気的に連結されることができる。
v
図2乃至図6を参照すると、第1反射カップ122の下部面202はボディー110の下部面107から露出され、第1反射カップ122の一端142は第1側面210から突出されてボディー110の外部に露出されることができる。
110 ボディー
122 第1反射カップ
124 第2反射カップ
126 連結部
132 第1発光素子
134 第2発光素子
150 ツェナーダイオード
151〜159 ワイヤ
Claims (15)
- 側面及び底部からなるキャビティを有するボディーと、
前記ボディーのキャビティの底部に互いに離隔して配置される第1反射カップと第2反射カップと、
前記第1反射カップの内部に配置される第1発光素子と、
前記第2反射カップの内部に配置される第2発光素子と、を含み、
前記第1反射カップと前記第2反射カップは、前記ボディーと異なる材質で構成される発光素子パッケージ。 - 前記第1反射カップ及び前記第2反射カップは、前記ボディーのキャビティの底部から陥没した構造を有する、請求項1に記載の発光素子パッケージ。
- 前記第1反射カップ及び前記第2反射カップのそれぞれの、少なくとも一部分は前記ボディーを貫通して露出される、請求項1または2に記載の発光素子パッケージ。
- 前記ボディーの上部面と底部との間に位置し、前記ボディーの上部面と段差を有し、前記ボディーの上部面と水平である枠部を有する、請求項1乃至3のいずれか1項に記載の発光素子パッケージ。
- 前記第1反射カップの上部面は前記第1発光素子の上部面と水平であり、前記第2反射カップの上部面は前記第2発光素子の上部面と水平である、請求項1乃至4のいずれか1項に記載の発光素子パッケージ。
- 前記第1反射カップの上部面は前記第1発光素子の上部面よりも高く、前記第2反射カップの上部面は前記第2発光素子の上部面よりも高い、請求項1乃至4のいずれか1項に記載の発光素子パッケージ。
- 前記第1反射カップの上部面は前記第1発光素子の上部面よりも低く、前記第2反射カップの上部面は前記第2発光素子の上部面よりも低い、請求項1乃至4のいずれか1項に記載の発光素子パッケージ。
- 前記第1反射カップの深さは前記第1発光素子の高さよりも大きく、前記第1発光素子の高さの2倍よりも小さく、
前記第2反射カップの深さは前記第2発光素子の高さよりも大きく、前記第2発光素子の高さの2倍よりも小さい、請求項6に記載の発光素子パッケージ。 - 前記第1反射カップの深さは前記第1発光素子の高さよりも小さく、前記第1発光素子の高さの1/2倍よりも大きく、
前記第2反射カップの深さは前記第2発光素子の高さよりも小さく、前記第2発光素子の高さの1/2倍よりも大きい、請求項7に記載の発光素子パッケージ。 - 側面及び底部からなるキャビティを有するボディーと、
前記ボディーのキャビティの底部に互いに離隔して形成される第1反射カップと第2反射カップと、
前記第1反射カップの内部に配置される第1発光素子と、
前記第2反射カップの内部に配置される第2発光素子と、
前記ボディーのキャビティの底部に前記第1反射カップ及び前記第2反射カップと離隔して形成される連結部と、を含み、
前記第1発光素子と前記第2発光素子は、前記連結部によって電気的に連結されることを特徴とする、発光素子パッケージ - 前記第1反射カップ及び前記第2反射カップは、前記キャビティの底部の一部分によって隔離される請求項10に記載の発光素子パッケージ。
- 前記第1反射カップと前記第1発光素子とを連結するようにボンディングされる第1ワイヤと、
前記第1発光素子と前記連結部とを連結するようにボンディングされる第2ワイヤと、
前記連結部と前記第2発光素子とを連結するようにボンディングされる第3ワイヤと、及び
前記第2発光素子と前記第2反射カップとを連結するようにボンディングされる第4ワイヤをさらに含み、
前記第1乃至第4ワイヤによって前記第1発光素子と前記第2発光素子とは、直列連結される、請求項10または11に記載の発光素子パッケージ。 - 前記第1反射カップと前記第1発光素子とを連結するようにボンディングされる第1ワイヤと、
前記第1発光素子と前記第2反射カップとを連結するようにボンディングされる第2ワイヤと、
前記第1反射カップと前記第2発光素子とを連結するようにボンディングされる第3ワイヤと、及び
前記第2発光素子と前記第2反射カップとを連結するようにボンディングされる第4ワイヤをさらに含み、
前記第1乃至第4ワイヤによって前記第1発光素子と前記第2発光素子とは、並列連結される、請求項10または11に記載の発光素子パッケージ。 - 前記第1反射カップと前記第1発光素子とを連結するようにボンディングされる第1ワイヤと、
前記第1発光素子と前記第2発光素子とを直接連結するようにボンディングされる第2ワイヤと、及び
前記第2発光素子と前記第2反射カップとを連結するようにボンディングされる第3ワイヤをさらに含み、
前記第1乃至第3ワイヤによって前記第1発光素子と前記第2発光素子とは、直列連結される、請求項10または11に記載の発光素子パッケージ。 - 前記第1発光素子及び第2発光素子を外部と隔離するために、前記ボディーのキャビティ、前記第1発光素子が配置された第1反射カップ、及び前記第2発光素子が配置された第2反射カップの内部を充填する封止材をさらに含む、請求項1乃至14のいずれか1項に記載の発光素子パッケージ。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014002628A1 (ja) * | 2012-06-29 | 2014-01-03 | シャープ株式会社 | 発光装置、照明装置および表示装置用バックライト |
JP2014060218A (ja) * | 2012-09-14 | 2014-04-03 | Nichia Chem Ind Ltd | 発光装置 |
KR20150002501A (ko) * | 2013-06-28 | 2015-01-07 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치용 패키지 및 그것을 사용한 발광 장치 |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9281460B2 (en) | 2012-10-31 | 2016-03-08 | Nichia Corporation | Light emitting device package and light emitting device having lead-frames |
KR20160109427A (ko) * | 2015-03-11 | 2016-09-21 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 라이트 유닛 |
JP2018148223A (ja) * | 2013-06-28 | 2018-09-20 | 日亜化学工業株式会社 | 発光装置用パッケージ |
EP3687011A1 (en) | 2019-01-22 | 2020-07-29 | Nichia Corporation | Light emitting device |
JP2022058187A (ja) * | 2020-09-30 | 2022-04-11 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101103674B1 (ko) | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
KR101859149B1 (ko) | 2011-04-14 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101871501B1 (ko) * | 2011-07-29 | 2018-06-27 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 조명 시스템 |
KR102010099B1 (ko) * | 2011-09-16 | 2019-10-21 | 에어 모션 시스템즈, 인크. | 고출력 led 소자용 어셈블리 및 상호 연결 방법 |
KR101905535B1 (ko) * | 2011-11-16 | 2018-10-10 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 조명 장치 |
US8803185B2 (en) * | 2012-02-21 | 2014-08-12 | Peiching Ling | Light emitting diode package and method of fabricating the same |
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KR101886157B1 (ko) * | 2012-08-23 | 2018-08-08 | 엘지이노텍 주식회사 | 발광 소자 및 조명시스템 |
KR101966110B1 (ko) * | 2012-10-11 | 2019-08-13 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 시스템 |
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KR101946922B1 (ko) * | 2012-11-16 | 2019-02-12 | 엘지이노텍 주식회사 | 발광 소자 및 조명 장치 |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
DE102013203759A1 (de) * | 2013-03-05 | 2014-09-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und elektronisches Gerät mit optoelektronischem Bauelement |
KR102053287B1 (ko) * | 2013-04-29 | 2019-12-06 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
US10217683B2 (en) * | 2015-05-13 | 2019-02-26 | Mitsubishi Electric Corporation | Mounted semiconductor module with a mold resin portion |
DE102015112042B4 (de) * | 2015-07-23 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Leuchtvorrichtung |
KR101778848B1 (ko) * | 2015-08-21 | 2017-09-14 | 엘지전자 주식회사 | 발광소자 패키지 어셈블리 및 이의 제조 방법 |
KR102537440B1 (ko) * | 2016-03-18 | 2023-05-30 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
EP3223322B1 (en) * | 2016-03-25 | 2019-05-01 | LG Innotek Co., Ltd. | Light emitting device package |
JP6936254B2 (ja) * | 2016-05-18 | 2021-09-15 | ルミレッズ ホールディング ベーフェー | 照明アセンブリ及び照明アセンブリの製造方法 |
US20170345983A1 (en) * | 2016-05-26 | 2017-11-30 | Epistar Corporation | Light-emitting device and light-emitting apparatus comprising the same |
JP6712532B2 (ja) | 2016-10-31 | 2020-06-24 | 株式会社東海理化電機製作所 | 方向指示機構 |
KR102385940B1 (ko) * | 2017-09-01 | 2022-04-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 광원 장치 |
KR101952438B1 (ko) * | 2018-04-20 | 2019-02-26 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 구비한 라이트 유닛 |
CN108878622B (zh) * | 2018-06-21 | 2020-03-17 | 深圳创维-Rgb电子有限公司 | 一种led封装结构、背光模组及显示设备 |
TWI770225B (zh) * | 2018-07-12 | 2022-07-11 | 晶元光電股份有限公司 | 發光元件 |
KR102053422B1 (ko) * | 2019-03-06 | 2020-01-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 장치 |
KR20200112540A (ko) * | 2019-03-22 | 2020-10-05 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028070U (ja) * | 1988-06-24 | 1990-01-18 | ||
JP2002314138A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2005353914A (ja) * | 2004-06-11 | 2005-12-22 | Toshiba Corp | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
JP2006093435A (ja) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Led装置 |
JP2007027765A (ja) * | 2005-07-19 | 2007-02-01 | Samsung Electro-Mechanics Co Ltd | 側面放出型二重レンズ構造ledパッケージ |
JP2007095722A (ja) * | 2005-09-27 | 2007-04-12 | Nichia Chem Ind Ltd | 発光装置 |
JP2008098218A (ja) * | 2006-05-10 | 2008-04-24 | Nichia Chem Ind Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
JP2008112966A (ja) * | 2006-10-05 | 2008-05-15 | Nichia Chem Ind Ltd | 発光装置 |
KR20080085505A (ko) * | 2007-03-20 | 2008-09-24 | 서울반도체 주식회사 | 발광 다이오드 |
JP2010003788A (ja) * | 2008-06-19 | 2010-01-07 | Okaya Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP2010010474A (ja) * | 2008-06-27 | 2010-01-14 | Kyocera Corp | 発光装置 |
Family Cites Families (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3820237A (en) | 1971-05-17 | 1974-06-28 | Northern Electric Co | Process for packaging light emitting devices |
JPS48102585A (ja) | 1972-04-04 | 1973-12-22 | ||
US3914786A (en) | 1974-04-19 | 1975-10-21 | Hewlett Packard Co | In-line reflective lead-pair for light-emitting diodes |
US4255688A (en) | 1977-12-15 | 1981-03-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Light emitter mounted on reflector formed on end of lead |
DE3129996A1 (de) | 1981-07-29 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Optokoppler |
DE3148843C2 (de) | 1981-12-10 | 1986-01-02 | Telefunken electronic GmbH, 7100 Heilbronn | Mehrfach-Leuchtdiodenanordnung |
JPS59128751A (ja) | 1983-01-12 | 1984-07-24 | Hamai Denkyu Kogyo Kk | 小型ガス入りランプの封着装置 |
JPS59128751U (ja) * | 1983-02-17 | 1984-08-30 | オムロン株式会社 | 面発光装置 |
JPS60261181A (ja) | 1984-06-07 | 1985-12-24 | Toshiba Corp | 光半導体装置 |
JPH028070A (ja) | 1988-06-28 | 1990-01-11 | Fujitsu Ltd | 両面印刷制御方式 |
EP1022787B2 (de) | 1989-05-31 | 2012-07-11 | OSRAM Opto Semiconductors GmbH | Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement |
EP0439653A1 (de) | 1990-01-31 | 1991-08-07 | Siemens Aktiengesellschaft | Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen |
JP2653894B2 (ja) | 1990-02-01 | 1997-09-17 | 富士写真フイルム株式会社 | 感熱記録材料 |
US5221641A (en) | 1991-06-21 | 1993-06-22 | Rohm Co., Ltd. | Process for making light emitting diodes |
DE4242842C2 (de) | 1992-02-14 | 1999-11-04 | Sharp Kk | Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung |
JPH0677540A (ja) * | 1992-08-24 | 1994-03-18 | Sanyo Electric Co Ltd | 光半導体装置 |
JP3101434B2 (ja) | 1992-08-26 | 2000-10-23 | 三洋電機株式会社 | 半導体レーザ装置 |
JPH0685328A (ja) | 1992-08-28 | 1994-03-25 | Stanley Electric Co Ltd | 表面実装型ledの製造方法 |
JP2690248B2 (ja) | 1992-09-17 | 1997-12-10 | ローム株式会社 | 表面実装型半導体装置 |
DE4232637C2 (de) | 1992-09-29 | 2002-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode mit Reflektor, der einen abgestimmtem Elastizitätsmodul besitzt |
DE4232644A1 (de) | 1992-09-29 | 1994-03-31 | Siemens Ag | Optoelektronisches Halbleiterbauelement |
JPH06196759A (ja) | 1992-12-24 | 1994-07-15 | Sharp Corp | 発光素子 |
JP3227295B2 (ja) | 1993-12-28 | 2001-11-12 | 松下電工株式会社 | 発光ダイオードの製造方法 |
JP3137823B2 (ja) | 1994-02-25 | 2001-02-26 | シャープ株式会社 | チップ部品型led及びその製造方法 |
DE19549818B4 (de) | 1995-09-29 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiter-Bauelement |
JPH1098215A (ja) * | 1996-09-24 | 1998-04-14 | Toyoda Gosei Co Ltd | 発光ダイオード装置 |
JP3964590B2 (ja) | 1999-12-27 | 2007-08-22 | 東芝電子エンジニアリング株式会社 | 光半導体パッケージ |
US6297598B1 (en) * | 2001-02-20 | 2001-10-02 | Harvatek Corp. | Single-side mounted light emitting diode module |
JP4066608B2 (ja) * | 2001-03-16 | 2008-03-26 | 日亜化学工業株式会社 | パッケージ成形体及びその製造方法 |
JP3771144B2 (ja) | 2001-06-27 | 2006-04-26 | 豊田合成株式会社 | Ledランプ |
US20020163001A1 (en) * | 2001-05-04 | 2002-11-07 | Shaddock David Mulford | Surface mount light emitting device package and fabrication method |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
EP1467414A4 (en) * | 2001-12-29 | 2007-07-11 | Hangzhou Fuyang Xinying Dianzi | LED AND LED LAMP |
JP3910171B2 (ja) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
KR100550750B1 (ko) * | 2003-07-25 | 2006-02-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
JP4654670B2 (ja) | 2003-12-16 | 2011-03-23 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2005197329A (ja) * | 2004-01-05 | 2005-07-21 | Stanley Electric Co Ltd | 表面実装型半導体装置及びそのリードフレーム構造 |
JP4572312B2 (ja) * | 2004-02-23 | 2010-11-04 | スタンレー電気株式会社 | Led及びその製造方法 |
JP4511238B2 (ja) | 2004-04-27 | 2010-07-28 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
US20050248259A1 (en) * | 2004-05-10 | 2005-11-10 | Roger Chang | Bent lead light emitting diode device having a heat dispersing capability |
US8975646B2 (en) * | 2004-05-31 | 2015-03-10 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and housing base for such a component |
JP2006019598A (ja) * | 2004-07-05 | 2006-01-19 | Citizen Electronics Co Ltd | 発光ダイオード |
US20060012992A1 (en) * | 2004-07-14 | 2006-01-19 | Taiwan Oasis Technology Co., Ltd. | LED luminance enhancing construction |
KR100524098B1 (ko) * | 2004-09-10 | 2005-10-26 | 럭스피아 주식회사 | 반도체 발광장치 및 그 제조방법 |
KR200373718Y1 (ko) | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
US7745832B2 (en) * | 2004-09-24 | 2010-06-29 | Epistar Corporation | Semiconductor light-emitting element assembly with a composite substrate |
JP2006114854A (ja) * | 2004-10-18 | 2006-04-27 | Sharp Corp | 半導体発光装置、液晶表示装置用のバックライト装置 |
JP2006165097A (ja) * | 2004-12-03 | 2006-06-22 | Harison Toshiba Lighting Corp | 発光素子の外囲器 |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
KR100722269B1 (ko) | 2005-02-15 | 2007-05-28 | 엘지전자 주식회사 | 메신저 기능이 구비된 이동통신 단말기 및 그 동작방법 |
US7411225B2 (en) * | 2005-03-21 | 2008-08-12 | Lg Electronics Inc. | Light source apparatus |
JP2007027535A (ja) * | 2005-07-20 | 2007-02-01 | Stanley Electric Co Ltd | 光半導体装置 |
KR100875443B1 (ko) * | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
JP2008061561A (ja) | 2006-09-07 | 2008-03-21 | Matsushita Electric Works Ltd | 捕獲殺虫装置 |
JP2008108835A (ja) * | 2006-10-24 | 2008-05-08 | Harison Toshiba Lighting Corp | 半導体発光装置及びその製造方法 |
KR20080045880A (ko) * | 2006-11-21 | 2008-05-26 | 삼성전기주식회사 | Led 패키지 |
US20080117619A1 (en) * | 2006-11-21 | 2008-05-22 | Siew It Pang | Light source utilizing a flexible circuit carrier and flexible reflectors |
KR101346799B1 (ko) | 2006-12-28 | 2014-01-02 | 서울반도체 주식회사 | 발광다이오드 패키지 및 그 제조방법 |
JP5106862B2 (ja) * | 2007-01-15 | 2012-12-26 | 昭和電工株式会社 | 発光ダイオードパッケージ |
CN101261981B (zh) * | 2007-03-06 | 2010-11-17 | 先进开发光电股份有限公司 | 暖色系光源 |
KR100855356B1 (ko) | 2007-03-23 | 2008-09-04 | 주식회사 옵토필 | 멀티-칩 발광다이오드 패키지 및 이를 이용한 조명장치 |
JP4973279B2 (ja) * | 2007-03-29 | 2012-07-11 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP5060172B2 (ja) * | 2007-05-29 | 2012-10-31 | 岩谷産業株式会社 | 半導体発光装置 |
US20080237621A1 (en) * | 2007-03-30 | 2008-10-02 | Sharp Kabushiki Kaisha | Light emitting device and method of producing the same |
JP5350658B2 (ja) | 2007-03-30 | 2013-11-27 | シャープ株式会社 | 発光素子 |
JP5122172B2 (ja) | 2007-03-30 | 2013-01-16 | ローム株式会社 | 半導体発光装置 |
KR100901618B1 (ko) | 2007-04-19 | 2009-06-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 제조방법 |
KR20090003378A (ko) * | 2007-06-05 | 2009-01-12 | 주식회사 루멘스 | 발광 다이오드 패키지 |
JP2008305940A (ja) * | 2007-06-07 | 2008-12-18 | Showa Denko Kk | 表示装置、キャップ、発光装置、およびこれらの製造方法 |
CN101325193B (zh) * | 2007-06-13 | 2010-06-09 | 先进开发光电股份有限公司 | 发光二极管封装体 |
JP5176144B2 (ja) * | 2007-08-22 | 2013-04-03 | 日立化成株式会社 | 熱硬化性光反射用樹脂組成物、これを用いた光半導体搭載用基板及びその製造方法、並びに光半導体装置 |
US8655409B2 (en) | 2007-08-30 | 2014-02-18 | Commscope Inc. Of North Carolina | Antenna with cellular and point-to-point communications capability |
JP5132234B2 (ja) * | 2007-09-25 | 2013-01-30 | 三洋電機株式会社 | 発光モジュール |
KR101374898B1 (ko) | 2007-09-28 | 2014-03-18 | 서울반도체 주식회사 | 계면 분리를 줄인 led 패키지 |
US7985980B2 (en) * | 2007-10-31 | 2011-07-26 | Sharp Kabushiki Kaisha | Chip-type LED and method for manufacturing the same |
KR100870950B1 (ko) | 2007-11-19 | 2008-12-01 | 일진반도체 주식회사 | 발광다이오드 소자 및 그 제조 방법 |
JP2009194213A (ja) * | 2008-02-15 | 2009-08-27 | Sanyo Electric Co Ltd | 電子部品 |
KR20090100967A (ko) | 2008-03-21 | 2009-09-24 | 주식회사 루멘스 | 발광다이오드 패키지 |
TW201007988A (en) | 2008-05-16 | 2010-02-16 | Meioh Plastics Molding Co Ltd | LED package, lead frame and method for producing the same |
JP2009278012A (ja) | 2008-05-16 | 2009-11-26 | Meio Kasei:Kk | Led装置用パッケージ |
JP2009302339A (ja) | 2008-06-13 | 2009-12-24 | Sanken Electric Co Ltd | 半導体発光装置 |
JP2010003743A (ja) * | 2008-06-18 | 2010-01-07 | Toshiba Corp | 発光装置 |
JP2010003877A (ja) * | 2008-06-20 | 2010-01-07 | Panasonic Corp | リードフレームおよび光半導体パッケージおよび光半導体装置および光半導体パッケージの製造方法 |
KR100944085B1 (ko) * | 2008-06-23 | 2010-02-24 | 서울반도체 주식회사 | 발광 장치 |
JP5227693B2 (ja) * | 2008-08-11 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置 |
JP2010045167A (ja) * | 2008-08-12 | 2010-02-25 | Stanley Electric Co Ltd | 半導体装置 |
JP5220526B2 (ja) * | 2008-09-11 | 2013-06-26 | 昭和電工株式会社 | 発光装置、発光モジュール、表示装置 |
KR20100030942A (ko) | 2008-09-11 | 2010-03-19 | 삼성전기주식회사 | 발광 다이오드 패키지 |
US20100078661A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Machined surface led assembly |
CN201336305Y (zh) | 2008-11-14 | 2009-10-28 | 河源市粤兴实业有限公司 | 带灯杯的菱形led模组 |
KR101491485B1 (ko) * | 2008-11-18 | 2015-02-11 | 삼성전자주식회사 | 측면 방출형 발광장치 및 선광원형 발광장치 |
TWM361722U (en) | 2008-12-29 | 2009-07-21 | Brightek Optoelectronic Co Ltd | Light emitting diode |
KR101124726B1 (ko) | 2009-04-15 | 2012-03-23 | (주)포스코엠텍 | 코일 포장재 밀착장치 |
CN201475686U (zh) | 2009-07-31 | 2010-05-19 | 陈忠 | 一种两光源led照明模块 |
KR101859149B1 (ko) * | 2011-04-14 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101103674B1 (ko) * | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
-
2010
- 2010-06-01 KR KR1020100051840A patent/KR101103674B1/ko active IP Right Grant
-
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- 2011-05-23 US US13/113,327 patent/US8269246B2/en active Active
- 2011-05-31 EP EP16152880.7A patent/EP3043394B1/en active Active
- 2011-05-31 EP EP11168236.5A patent/EP2393114B1/en active Active
- 2011-06-01 JP JP2011123165A patent/JP6242035B2/ja active Active
-
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- 2012-09-06 US US13/604,706 patent/US8791486B2/en active Active
-
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- 2014-03-27 US US14/227,104 patent/US9165912B2/en active Active
-
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- 2015-09-25 US US14/865,145 patent/US9418973B2/en active Active
-
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- 2016-07-19 US US15/213,548 patent/US9659916B2/en active Active
- 2016-09-05 JP JP2016172760A patent/JP6033982B1/ja active Active
- 2016-10-26 JP JP2016209128A patent/JP6325051B2/ja active Active
-
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- 2017-04-20 US US15/492,235 patent/US9991241B2/en active Active
-
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- 2018-04-11 JP JP2018076303A patent/JP6505286B2/ja active Active
- 2018-06-01 US US15/995,222 patent/US10283491B2/en active Active
-
2019
- 2019-03-20 US US16/358,876 patent/US10541235B2/en active Active
- 2019-03-26 JP JP2019058675A patent/JP2019106551A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028070U (ja) * | 1988-06-24 | 1990-01-18 | ||
JP2002314138A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2005353914A (ja) * | 2004-06-11 | 2005-12-22 | Toshiba Corp | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
JP2006093435A (ja) * | 2004-09-24 | 2006-04-06 | Stanley Electric Co Ltd | Led装置 |
JP2007027765A (ja) * | 2005-07-19 | 2007-02-01 | Samsung Electro-Mechanics Co Ltd | 側面放出型二重レンズ構造ledパッケージ |
JP2007095722A (ja) * | 2005-09-27 | 2007-04-12 | Nichia Chem Ind Ltd | 発光装置 |
JP2008098218A (ja) * | 2006-05-10 | 2008-04-24 | Nichia Chem Ind Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
JP2008112966A (ja) * | 2006-10-05 | 2008-05-15 | Nichia Chem Ind Ltd | 発光装置 |
KR20080085505A (ko) * | 2007-03-20 | 2008-09-24 | 서울반도체 주식회사 | 발광 다이오드 |
JP2010003788A (ja) * | 2008-06-19 | 2010-01-07 | Okaya Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP2010010474A (ja) * | 2008-06-27 | 2010-01-14 | Kyocera Corp | 発光装置 |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014002628A1 (ja) * | 2012-06-29 | 2014-01-03 | シャープ株式会社 | 発光装置、照明装置および表示装置用バックライト |
JP2014011359A (ja) * | 2012-06-29 | 2014-01-20 | Sharp Corp | 発光装置、照明装置および表示装置用バックライト |
US9680076B2 (en) | 2012-06-29 | 2017-06-13 | Sharp Kabushiki Kaisha | Light-emitting device, illumination device and backlight for display device |
TWI499095B (zh) * | 2012-06-29 | 2015-09-01 | Sharp Kk | A light emitting device, a lighting device, and a display device |
JP2014060218A (ja) * | 2012-09-14 | 2014-04-03 | Nichia Chem Ind Ltd | 発光装置 |
US9281460B2 (en) | 2012-10-31 | 2016-03-08 | Nichia Corporation | Light emitting device package and light emitting device having lead-frames |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
USRE47504E1 (en) | 2012-12-29 | 2019-07-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
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US9406856B2 (en) | 2013-06-28 | 2016-08-02 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US9647190B2 (en) | 2013-06-28 | 2017-05-09 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
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US9991432B2 (en) | 2013-06-28 | 2018-06-05 | Nichia Corporation | Light emitting apparatus |
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US10305011B2 (en) | 2013-06-28 | 2019-05-28 | Nichia Corporation | Light emitting apparatus |
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JP7269510B2 (ja) | 2020-09-30 | 2023-05-09 | 日亜化学工業株式会社 | 発光装置 |
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KR20110132045A (ko) | 2011-12-07 |
JP2017022420A (ja) | 2017-01-26 |
US9418973B2 (en) | 2016-08-16 |
US10283491B2 (en) | 2019-05-07 |
JP2016213503A (ja) | 2016-12-15 |
US9165912B2 (en) | 2015-10-20 |
JP2018137471A (ja) | 2018-08-30 |
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US20170221870A1 (en) | 2017-08-03 |
EP2393114A2 (en) | 2011-12-07 |
US20160013171A1 (en) | 2016-01-14 |
EP2393114A3 (en) | 2015-02-18 |
JP2019106551A (ja) | 2019-06-27 |
US20190221555A1 (en) | 2019-07-18 |
KR101103674B1 (ko) | 2012-01-11 |
US8791486B2 (en) | 2014-07-29 |
US9991241B2 (en) | 2018-06-05 |
US10541235B2 (en) | 2020-01-21 |
JP6242035B2 (ja) | 2017-12-06 |
EP3043394A1 (en) | 2016-07-13 |
US20140225134A1 (en) | 2014-08-14 |
EP3043394B1 (en) | 2019-10-02 |
US8269246B2 (en) | 2012-09-18 |
JP6505286B2 (ja) | 2019-04-24 |
US20120326183A1 (en) | 2012-12-27 |
US20110220927A1 (en) | 2011-09-15 |
EP2393114B1 (en) | 2018-09-12 |
JP6033982B1 (ja) | 2016-11-30 |
JP6325051B2 (ja) | 2018-05-16 |
US20160329311A1 (en) | 2016-11-10 |
US9659916B2 (en) | 2017-05-23 |
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