JP2010153931A5 - - Google Patents

Download PDF

Info

Publication number
JP2010153931A5
JP2010153931A5 JP2010087336A JP2010087336A JP2010153931A5 JP 2010153931 A5 JP2010153931 A5 JP 2010153931A5 JP 2010087336 A JP2010087336 A JP 2010087336A JP 2010087336 A JP2010087336 A JP 2010087336A JP 2010153931 A5 JP2010153931 A5 JP 2010153931A5
Authority
JP
Japan
Prior art keywords
nozzle member
exposure apparatus
substrate
optical system
driving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010087336A
Other languages
English (en)
Japanese (ja)
Other versions
JP5310632B2 (ja
JP2010153931A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010087336A priority Critical patent/JP5310632B2/ja
Priority claimed from JP2010087336A external-priority patent/JP5310632B2/ja
Publication of JP2010153931A publication Critical patent/JP2010153931A/ja
Publication of JP2010153931A5 publication Critical patent/JP2010153931A5/ja
Application granted granted Critical
Publication of JP5310632B2 publication Critical patent/JP5310632B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2010087336A 2004-03-25 2010-04-05 露光装置、露光方法、及びデバイス製造方法 Expired - Fee Related JP5310632B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010087336A JP5310632B2 (ja) 2004-03-25 2010-04-05 露光装置、露光方法、及びデバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004089348 2004-03-25
JP2004089348 2004-03-25
JP2010087336A JP5310632B2 (ja) 2004-03-25 2010-04-05 露光装置、露光方法、及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006511475A Division JP4525676B2 (ja) 2004-03-25 2005-03-23 露光装置、露光方法、及びデバイス製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011129493A Division JP5545270B2 (ja) 2004-03-25 2011-06-09 露光装置、露光方法、及びデバイス製造方法
JP2012083156A Division JP5545315B2 (ja) 2004-03-25 2012-03-30 露光装置、露光方法、及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2010153931A JP2010153931A (ja) 2010-07-08
JP2010153931A5 true JP2010153931A5 (cg-RX-API-DMAC7.html) 2011-08-11
JP5310632B2 JP5310632B2 (ja) 2013-10-09

Family

ID=35056454

Family Applications (13)

Application Number Title Priority Date Filing Date
JP2006511475A Expired - Fee Related JP4525676B2 (ja) 2004-03-25 2005-03-23 露光装置、露光方法、及びデバイス製造方法
JP2010087336A Expired - Fee Related JP5310632B2 (ja) 2004-03-25 2010-04-05 露光装置、露光方法、及びデバイス製造方法
JP2011129493A Expired - Fee Related JP5545270B2 (ja) 2004-03-25 2011-06-09 露光装置、露光方法、及びデバイス製造方法
JP2012083156A Expired - Fee Related JP5545315B2 (ja) 2004-03-25 2012-03-30 露光装置、露光方法、及びデバイス製造方法
JP2013146581A Expired - Fee Related JP5673747B2 (ja) 2004-03-25 2013-07-12 露光装置及びデバイス製造方法
JP2014018562A Expired - Fee Related JP5790803B2 (ja) 2004-03-25 2014-02-03 露光装置、露光方法及びデバイス製造方法
JP2015005854A Expired - Fee Related JP5971358B2 (ja) 2004-03-25 2015-01-15 露光装置、露光方法及びデバイス製造方法
JP2015237657A Expired - Fee Related JP6160681B2 (ja) 2004-03-25 2015-12-04 露光装置及びデバイス製造方法
JP2016192921A Expired - Fee Related JP6304335B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192922A Expired - Lifetime JP6315051B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192923A Expired - Lifetime JP6315052B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192920A Expired - Lifetime JP6315050B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2017232520A Pending JP2018041107A (ja) 2004-03-25 2017-12-04 露光装置及びデバイス製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2006511475A Expired - Fee Related JP4525676B2 (ja) 2004-03-25 2005-03-23 露光装置、露光方法、及びデバイス製造方法

Family Applications After (11)

Application Number Title Priority Date Filing Date
JP2011129493A Expired - Fee Related JP5545270B2 (ja) 2004-03-25 2011-06-09 露光装置、露光方法、及びデバイス製造方法
JP2012083156A Expired - Fee Related JP5545315B2 (ja) 2004-03-25 2012-03-30 露光装置、露光方法、及びデバイス製造方法
JP2013146581A Expired - Fee Related JP5673747B2 (ja) 2004-03-25 2013-07-12 露光装置及びデバイス製造方法
JP2014018562A Expired - Fee Related JP5790803B2 (ja) 2004-03-25 2014-02-03 露光装置、露光方法及びデバイス製造方法
JP2015005854A Expired - Fee Related JP5971358B2 (ja) 2004-03-25 2015-01-15 露光装置、露光方法及びデバイス製造方法
JP2015237657A Expired - Fee Related JP6160681B2 (ja) 2004-03-25 2015-12-04 露光装置及びデバイス製造方法
JP2016192921A Expired - Fee Related JP6304335B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192922A Expired - Lifetime JP6315051B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192923A Expired - Lifetime JP6315052B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2016192920A Expired - Lifetime JP6315050B2 (ja) 2004-03-25 2016-09-30 露光装置、露光方法及びデバイス製造方法
JP2017232520A Pending JP2018041107A (ja) 2004-03-25 2017-12-04 露光装置及びデバイス製造方法

Country Status (5)

Country Link
US (7) US8111373B2 (cg-RX-API-DMAC7.html)
JP (13) JP4525676B2 (cg-RX-API-DMAC7.html)
KR (8) KR101707294B1 (cg-RX-API-DMAC7.html)
TW (7) TWI358746B (cg-RX-API-DMAC7.html)
WO (1) WO2005093791A1 (cg-RX-API-DMAC7.html)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180117228A (ko) 2004-01-05 2018-10-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101259190B1 (ko) 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
JP4565272B2 (ja) 2004-07-01 2010-10-20 株式会社ニコン 液浸リソグラフィのための動的流体制御システム
TWI506674B (zh) 2004-09-17 2015-11-01 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
US7180571B2 (en) 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
CN100555568C (zh) * 2005-04-28 2009-10-28 株式会社尼康 曝光方法及曝光装置、以及元件制造方法
JP2007012954A (ja) * 2005-07-01 2007-01-18 Canon Inc 露光装置
US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4514225B2 (ja) * 2005-11-16 2010-07-28 キヤノン株式会社 露光装置及びデバイス製造方法
KR101539517B1 (ko) * 2005-12-08 2015-07-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7701551B2 (en) 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006023876A1 (de) * 2006-05-19 2007-11-22 Carl Zeiss Smt Ag Optische Abbildungseinrichtung
US8027023B2 (en) 2006-05-19 2011-09-27 Carl Zeiss Smt Gmbh Optical imaging device and method for reducing dynamic fluctuations in pressure difference
US7656502B2 (en) * 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080198348A1 (en) * 2007-02-20 2008-08-21 Nikon Corporation Apparatus and methods for minimizing force variation from immersion liquid in lithography systems
EP3246755B1 (en) * 2007-07-18 2018-12-12 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
NL1035908A1 (nl) * 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
KR101408783B1 (ko) 2007-12-07 2014-06-17 삼성전자주식회사 반도체 소자의 제조장치 및 이를 이용한 반도체 소자의제조방법
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
NL2003392A (en) 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
NL2011457A (en) * 2012-10-15 2014-04-16 Asml Netherlands Bv Actuation mechanism, optical apparatus, lithography apparatus and method of manufacturing devices.
JP6119242B2 (ja) * 2012-12-27 2017-04-26 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JPWO2015147039A1 (ja) * 2014-03-26 2017-04-13 株式会社ニコン 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
EP3149533A4 (en) * 2014-05-29 2017-06-07 Rarecyte, Inc. Apparatus for holding a substrate within a secondary device
US11300769B2 (en) 2014-05-29 2022-04-12 Rarecyte, Inc. Automated substrate loading
US10802260B2 (en) 2014-05-29 2020-10-13 Rarecyte, Inc. Automated substrate loading
US11422352B2 (en) 2014-05-29 2022-08-23 Rarecyte, Inc. Automated substrate loading
US10890748B2 (en) 2014-05-29 2021-01-12 Rarecyte, Inc. Automated substrate loading
JP7069177B2 (ja) 2016-09-21 2022-05-17 ネクストキュア インコーポレイテッド シグレック－１５に対する抗体及びその使用方法
JP6506785B2 (ja) * 2017-02-02 2019-04-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ リソグラフィ用テンプレートの製造方法、プログラム及び基板処理装置
JP7088028B2 (ja) 2017-02-08 2022-06-21 昭和電工マテリアルズ株式会社 電荷輸送性材料及びその利用
WO2020180689A1 (en) 2019-03-01 2020-09-10 Rarecyte, Inc. Holding a substrate within a secondary device
CN112684665B (zh) * 2020-12-25 2024-06-25 浙江启尔机电技术有限公司 一种浸液供给回收装置
KR102584513B1 (ko) * 2020-12-31 2023-10-06 세메스 주식회사 온도 변화가 수반되는 분위기에 제공되는 기판 지지 부재의 수평 측정용 기판형 센서, 이를 이용한 수평 측정 방법 및 비일시적 컴퓨터 판독가능 매체
CN114690577B (zh) * 2020-12-31 2024-10-25 上海微电子装备（集团）股份有限公司 一种管路柔性适应装置及浸没式光刻机

Family Cites Families (223)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
US4441808A (en) 1982-11-15 1984-04-10 Tre Semiconductor Equipment Corp. Focusing device for photo-exposure system
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US4837443A (en) 1987-10-15 1989-06-06 The Perkin-Elmer Corporation Guard ring for a differentially pumped seal apparatus
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3308063B2 (ja) * 1993-09-21 2002-07-29 株式会社ニコン 投影露光方法及び装置
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5707535A (en) 1996-01-11 1998-01-13 Harris; Ronald B. Vacuum loadable divided phase separator for liquid/solid separation
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
JP3227595B2 (ja) 1996-08-20 2001-11-12 東京エレクトロン株式会社 現像処理方法及び現像処理装置
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1244021C (zh) 1996-11-28 2006-03-01 株式会社尼康 光刻装置和曝光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP3728613B2 (ja) 1996-12-06 2005-12-21 株式会社ニコン 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
AU6853598A (en) * 1997-04-18 1998-11-13 Nikon Corporation Aligner, exposure method using the aligner, and method of manufacture of circuitdevice
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US20010003028A1 (en) 1997-09-19 2001-06-07 Nikon Corporation Scanning Exposure Method
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JPH11260791A (ja) 1998-03-10 1999-09-24 Toshiba Mach Co Ltd 半導体ウエハの乾燥方法および乾燥装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US5997963A (en) 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000076707A (ja) 1998-08-31 2000-03-14 Sony Corp 光学記録媒体作製用原盤記録装置
KR100697569B1 (ko) 1998-09-03 2007-03-21 가부시키가이샤 니콘 노광장치 및 노광방법, 그리고 디바이스 및 그의 제조방법
EP1052552A3 (en) 1999-04-19 2003-03-12 ASML Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatus
JP3653198B2 (ja) 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
JP2001118773A (ja) 1999-10-18 2001-04-27 Nikon Corp ステージ装置及び露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
TWI264617B (en) * 1999-12-21 2006-10-21 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP3630054B2 (ja) 2000-01-11 2005-03-16 松下電器産業株式会社 プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法
TW579664B (en) 2000-01-11 2004-03-11 Matsushita Electric Industrial Co Ltd Apparatus and method for manufacturing printed circuit board
US6488040B1 (en) 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP2002122999A (ja) 2000-10-16 2002-04-26 Nikon Corp 露光方法、露光装置及びマスク
JP2002134384A (ja) 2000-10-20 2002-05-10 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US20020080339A1 (en) * 2000-12-25 2002-06-27 Nikon Corporation Stage apparatus, vibration control method and exposure apparatus
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US7032658B2 (en) 2002-01-31 2006-04-25 Smart Drilling And Completion, Inc. High power umbilicals for electric flowline immersion heating of produced hydrocarbons
JP2003124180A (ja) 2001-10-16 2003-04-25 Ebara Corp 基板処理装置
US7482118B2 (en) * 2001-11-15 2009-01-27 Third Wave Technologies, Inc. Endonuclease-substrate complexes
US6811613B2 (en) 2001-11-26 2004-11-02 Tokyo Electron Limited Coating film forming apparatus
US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
AU2003209019A1 (en) 2002-02-06 2003-09-02 Akrion, Llc Capillary drying of substrates
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7520285B2 (en) 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420300B1 (en) 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
SG157962A1 (en) 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
KR20130010039A (ko) 2002-12-10 2013-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
US7358507B2 (en) 2002-12-13 2008-04-15 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
EP2945016B1 (en) 2003-02-26 2017-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4902201B2 (ja) 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR101177331B1 (ko) 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
JP4775256B2 (ja) 2003-04-10 2011-09-21 株式会社ニコン 液浸リソグラフィ装置用の減圧排出を含む環境システム
KR101497289B1 (ko) 2003-04-10 2015-02-27 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG139734A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
CN1774667A (zh) 2003-04-17 2006-05-17 株式会社尼康 用在浸没式平版印刷方法中自动聚焦部件的光学配置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
EP2270599A1 (en) 2003-05-13 2011-01-05 ASML Netherlands BV Lithographic apparatus
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
JP2004349645A (ja) * 2003-05-26 2004-12-09 Sony Corp 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法
DE10324477A1 (de) 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486828B1 (en) * 2003-06-09 2013-10-09 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101265454B1 (ko) 2003-06-19 2013-05-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494079B1 (en) * 2003-06-27 2008-01-02 ASML Netherlands B.V. Lithographic Apparatus
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1639391A4 (en) 2003-07-01 2009-04-29 Nikon Corp USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS
EP1646074A4 (en) 2003-07-09 2007-10-03 Nikon Corp EXPOSURE DEVICE AND METHOD OF MANUFACTURE
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101523180B1 (ko) 2003-09-03 2015-05-26 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4515209B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4513299B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
JP2005183744A (ja) * 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP5420821B2 (ja) 2004-01-14 2014-02-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射屈折投影対物レンズ
KR101099847B1 (ko) 2004-01-16 2011-12-27 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
US20070165198A1 (en) 2004-02-13 2007-07-19 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
JP4510494B2 (ja) * 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101259190B1 (ko) 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
US7057702B2 (en) 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4565272B2 (ja) 2004-07-01 2010-10-20 株式会社ニコン 液浸リソグラフィのための動的流体制御システム
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7161654B2 (en) 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7265813B2 (en) 2004-12-28 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Similar Documents

Publication Publication Date Title
JP2010153931A5 (cg-RX-API-DMAC7.html)
JP2010109391A5 (cg-RX-API-DMAC7.html)
JP5787691B2 (ja) インプリント装置、それを用いた物品の製造方法
JP2011023764A5 (ja) 流路形成部材、露光装置、露光方法、及びデバイス製造方法
JP2011109147A5 (ja) 露光方法、露光装置、及びデバイス製造方法
JP2012129558A5 (ja) 露光装置、露光装置の制御方法、及びデバイス製造方法
JP7121122B2 (ja) 基板ホルダ、基板支持部、基板をクランプシステムにクランプする方法、およびリソグラフィ装置
JP2014197716A5 (cg-RX-API-DMAC7.html)
JP2010199615A5 (ja) 露光方法及び露光装置
JP2012080137A5 (cg-RX-API-DMAC7.html)
JP2007515798A5 (cg-RX-API-DMAC7.html)
JP2013021355A5 (cg-RX-API-DMAC7.html)
US20130320589A1 (en) Imprint apparatus and method of manufacturing article
TW202333274A (zh) 接合基板之裝置及方法
JP2011211222A5 (cg-RX-API-DMAC7.html)
US9494876B2 (en) Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
JP2010251808A5 (ja) 流路形成部材、露光装置、露光方法、及びデバイス製造方法
TW201220419A (en) Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
JP2010080630A (ja) 押印装置および物品の製造方法
CN114126842A (zh) 用于增材制造的重涂器系统
JP2010080631A (ja) 押印装置および物品の製造方法
TW200947145A (en) Immersion system, exposure apparatus, exposing method, and device fabricating method
CN114025900A (zh) 用于增材制造的重涂器系统
JP2010153932A5 (cg-RX-API-DMAC7.html)
JP2008283196A (ja) マスクに与えられている構造を基板上に転写するための装置