JP2010087531A5 - - Google Patents

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JP2010087531A5
JP2010087531A5 JP2010000106A JP2010000106A JP2010087531A5 JP 2010087531 A5 JP2010087531 A5 JP 2010087531A5 JP 2010000106 A JP2010000106 A JP 2010000106A JP 2010000106 A JP2010000106 A JP 2010000106A JP 2010087531 A5 JP2010087531 A5 JP 2010087531A5
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substrate
liquid
exposure apparatus
stage
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JP2010087531A (ja
JP5136565B2 (ja
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JP2010000106A 2003-10-09 2010-01-04 露光装置及び露光方法、デバイス製造方法 Expired - Fee Related JP5136565B2 (ja)

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JP2010000106A JP5136565B2 (ja) 2003-10-09 2010-01-04 露光装置及び露光方法、デバイス製造方法

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JP2003350628 2003-10-09
JP2003350628 2003-10-09
JP2004045103 2004-02-20
JP2004045103 2004-02-20
JP2010000106A JP5136565B2 (ja) 2003-10-09 2010-01-04 露光装置及び露光方法、デバイス製造方法

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JP2010087531A JP2010087531A (ja) 2010-04-15
JP2010087531A5 true JP2010087531A5 (enrdf_load_stackoverflow) 2011-05-26
JP5136565B2 JP5136565B2 (ja) 2013-02-06

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JP2010000106A Expired - Fee Related JP5136565B2 (ja) 2003-10-09 2010-01-04 露光装置及び露光方法、デバイス製造方法
JP2011082809A Expired - Fee Related JP5299465B2 (ja) 2003-10-09 2011-04-04 露光装置及び露光方法、デバイス製造方法
JP2012082716A Expired - Fee Related JP5765285B2 (ja) 2003-10-09 2012-03-30 露光装置及び露光方法、デバイス製造方法
JP2013269195A Expired - Fee Related JP5811169B2 (ja) 2003-10-09 2013-12-26 露光装置及び露光方法、デバイス製造方法
JP2014227908A Expired - Fee Related JP6036791B2 (ja) 2003-10-09 2014-11-10 露光装置及び露光方法、デバイス製造方法
JP2015205399A Expired - Fee Related JP6304190B2 (ja) 2003-10-09 2015-10-19 液浸露光装置及び液浸露光方法、デバイス製造方法
JP2016201770A Expired - Fee Related JP6332395B2 (ja) 2003-10-09 2016-10-13 液浸露光装置及び液浸露光方法、デバイス製造方法
JP2017212586A Pending JP2018028692A (ja) 2003-10-09 2017-11-02 露光装置及び露光方法、デバイス製造方法
JP2018218881A Withdrawn JP2019035983A (ja) 2003-10-09 2018-11-22 露光装置及び露光方法、デバイス製造方法

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JP2011082809A Expired - Fee Related JP5299465B2 (ja) 2003-10-09 2011-04-04 露光装置及び露光方法、デバイス製造方法
JP2012082716A Expired - Fee Related JP5765285B2 (ja) 2003-10-09 2012-03-30 露光装置及び露光方法、デバイス製造方法
JP2013269195A Expired - Fee Related JP5811169B2 (ja) 2003-10-09 2013-12-26 露光装置及び露光方法、デバイス製造方法
JP2014227908A Expired - Fee Related JP6036791B2 (ja) 2003-10-09 2014-11-10 露光装置及び露光方法、デバイス製造方法
JP2015205399A Expired - Fee Related JP6304190B2 (ja) 2003-10-09 2015-10-19 液浸露光装置及び液浸露光方法、デバイス製造方法
JP2016201770A Expired - Fee Related JP6332395B2 (ja) 2003-10-09 2016-10-13 液浸露光装置及び液浸露光方法、デバイス製造方法
JP2017212586A Pending JP2018028692A (ja) 2003-10-09 2017-11-02 露光装置及び露光方法、デバイス製造方法
JP2018218881A Withdrawn JP2019035983A (ja) 2003-10-09 2018-11-22 露光装置及び露光方法、デバイス製造方法

Country Status (10)

Country Link
US (5) US8130361B2 (enrdf_load_stackoverflow)
EP (6) EP3410216A1 (enrdf_load_stackoverflow)
JP (9) JP5136565B2 (enrdf_load_stackoverflow)
KR (8) KR101523456B1 (enrdf_load_stackoverflow)
CN (1) CN102360167B (enrdf_load_stackoverflow)
HK (1) HK1259349A1 (enrdf_load_stackoverflow)
IL (1) IL174854A (enrdf_load_stackoverflow)
SG (3) SG147431A1 (enrdf_load_stackoverflow)
TW (4) TWI553701B (enrdf_load_stackoverflow)
WO (1) WO2005036624A1 (enrdf_load_stackoverflow)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI616932B (zh) * 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
TWI553701B (zh) * 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
KR101554772B1 (ko) * 2004-02-04 2015-09-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1873816A4 (en) 2005-04-18 2010-11-24 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENTS MANUFACTURING METHOD
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
CN100462845C (zh) * 2005-11-11 2009-02-18 台湾积体电路制造股份有限公司 具有晶圆密封机构的改良型浸润式微影系统及其方法
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP4704221B2 (ja) * 2006-01-26 2011-06-15 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7978308B2 (en) * 2006-05-15 2011-07-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW201809913A (zh) * 2006-09-01 2018-03-16 日商尼康股份有限公司 曝光裝置、曝光方法、以及元件製造方法
JP2008283052A (ja) * 2007-05-11 2008-11-20 Toshiba Corp 液浸露光装置および半導体装置の製造方法
JP5266855B2 (ja) * 2008-04-21 2013-08-21 日本電気株式会社 光学式外観検査装置
TW200944946A (en) * 2008-04-28 2009-11-01 Nanya Technology Corp Exposure system
JP2009295933A (ja) * 2008-06-09 2009-12-17 Canon Inc ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法
US8290240B2 (en) * 2008-06-11 2012-10-16 Sirona Dental Systems Gmbh System, apparatus, method, and computer program product for determining spatial characteristics of an object using a camera and a search pattern
NL2002998A1 (nl) * 2008-06-18 2009-12-22 Asml Netherlands Bv Lithographic apparatus.
JP2012004490A (ja) * 2010-06-21 2012-01-05 Tokyo Electron Ltd 基板搬送装置及び基板搬送方法
US9083863B2 (en) 2012-04-20 2015-07-14 Hewlett-Packard Development Company, L.P. Alignment system for a digital image capture device
US9162880B2 (en) * 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US9217917B2 (en) * 2014-02-27 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Three-direction alignment mark
CN107250915B (zh) * 2015-02-23 2020-03-13 株式会社尼康 测量装置、光刻系统及曝光装置、以及管理方法、重迭测量方法及组件制造方法
JP6506153B2 (ja) * 2015-10-27 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 変位検出装置および変位検出方法ならびに基板処理装置
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6307730B1 (ja) * 2016-09-29 2018-04-11 株式会社新川 半導体装置の製造方法、及び実装装置
JP2018116036A (ja) * 2017-01-13 2018-07-26 株式会社エンプラス マーカ搭載用ユニット
WO2018153481A1 (en) * 2017-02-24 2018-08-30 Applied Materials, Inc. Apparatus for vacuum processing
CN112889003A (zh) * 2018-10-01 2021-06-01 Asml荷兰有限公司 光刻设备中的物体
KR20210070995A (ko) 2018-10-05 2021-06-15 에이에스엠엘 네델란즈 비.브이. 냉각 후드 상에서의 빠른 온도 제어를 위한 가스 혼합
US20200326275A1 (en) * 2019-04-09 2020-10-15 Illinois Tools Works Inc. Non-destructive testing (ndt) based setups with integrated light sensors
KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas

Family Cites Families (229)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS587823A (ja) 1981-07-06 1983-01-17 Hitachi Ltd アライメント方法およびその装置
US4410563A (en) 1982-02-22 1983-10-18 The United States Of America As Represented By The Secretary Of The Navy Repellent coatings for optical surfaces
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
US4650983A (en) * 1983-11-07 1987-03-17 Nippon Kogaku K. K. Focusing apparatus for projection optical system
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
US4617057A (en) 1985-06-04 1986-10-14 Dow Corning Corporation Oil and water repellent coating compositions
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62266846A (ja) * 1986-05-15 1987-11-19 Canon Inc ウエハ検出装置
JPS62298728A (ja) 1986-06-18 1987-12-25 Fujitsu Ltd 照度測定装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US5117254A (en) * 1988-05-13 1992-05-26 Canon Kabushiki Kaisha Projection exposure apparatus
JPH0294540A (ja) * 1988-09-30 1990-04-05 Canon Inc 基板着脱装置
JP3033135B2 (ja) 1990-06-13 2000-04-17 株式会社ニコン 投影露光装置及び方法
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JP3031993B2 (ja) * 1990-11-05 2000-04-10 株式会社東芝 Ｘ線露光装置
US6503567B2 (en) 1990-12-25 2003-01-07 Matsushita Electric Industrial Co., Ltd. Transparent substrate and method of manufacturing the same
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
US5689339A (en) * 1991-10-23 1997-11-18 Nikon Corporation Alignment apparatus
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3198309B2 (ja) 1992-12-10 2001-08-13 株式会社ニコン 露光装置、露光方法およびワーク処理方法
JPH06232379A (ja) 1993-02-01 1994-08-19 Sharp Corp 固体撮像素子
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) * 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
TW417158B (en) * 1994-11-29 2001-01-01 Ushio Electric Inc Method and device for positioning mask and workpiece
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
WO1998024115A1 (fr) 1996-11-28 1998-06-04 Nikon Corporation Dispositif d'alignement et procede d'exposition
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
KR100197885B1 (ko) * 1996-12-23 1999-06-15 윤종용 노광설비의 기준마크 보호장치
JP2000505958A (ja) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ２個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1149504A (ja) 1997-07-29 1999-02-23 Toshiba Eng Co Ltd 廃活性炭と水との分離装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2549899A (en) 1998-03-02 1999-09-20 Nikon Corporation Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device
WO1999048192A1 (fr) * 1998-03-19 1999-09-23 Nikon Corporation Moteur plat, etage, dispositif d'exposition et son procede de fabrication, et dispositif et procede permettant de fabriquer lesdits elements
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP3602720B2 (ja) * 1998-04-27 2004-12-15 大日本スクリーン製造株式会社 基板処理装置
US6498582B1 (en) 1998-06-19 2002-12-24 Raytheon Company Radio frequency receiving circuit having a passive monopulse comparator
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
DE69930398T2 (de) 1999-09-20 2006-10-19 Nikon Corp. Belichtungssystem mit einem parallelen Verbindungsmechanismus und Belichtungsverfahren
US6549277B1 (en) * 1999-09-28 2003-04-15 Nikon Corporation Illuminance meter, illuminance measuring method and exposure apparatus
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001318470A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光装置、マイクロデバイス、フォトマスク、及び露光方法
JP2001267400A (ja) * 2000-03-16 2001-09-28 Kyocera Corp ウエハ支持部材
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP4579376B2 (ja) 2000-06-19 2010-11-10 キヤノン株式会社 露光装置およびデバイス製造方法
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
EP1186959B1 (en) * 2000-09-07 2009-06-17 ASML Netherlands B.V. Method for calibrating a lithographic projection apparatus
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002289514A (ja) * 2000-12-22 2002-10-04 Nikon Corp 露光装置及び露光方法
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
TW530334B (en) * 2001-05-08 2003-05-01 Asml Netherlands Bv Optical exposure apparatus, lithographic projection tool, substract coating machine, and device manufacturing method
EP1256843A1 (en) * 2001-05-08 2002-11-13 ASML Netherlands B.V. Method of calibrating a lithographic apparatus
US20040253809A1 (en) 2001-08-18 2004-12-16 Yao Xiang Yu Forming a semiconductor structure using a combination of planarizing methods and electropolishing
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
JP3448812B2 (ja) * 2002-06-14 2003-09-22 株式会社ニコン マーク検知装置、及びそれを有する露光装置、及びその露光装置を用いた半導体素子又は液晶表示素子の製造方法
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI251127B (en) * 2002-11-12 2006-03-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101349876B (zh) * 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4645027B2 (ja) * 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
AU2003289237A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
AU2003289007A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Optical device and projection exposure apparatus using such optical device
AU2003276569A1 (en) 2002-12-13 2004-07-09 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
JP4364805B2 (ja) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上にスポットを照射する方法及び装置
CN100385535C (zh) 2002-12-19 2008-04-30 皇家飞利浦电子股份有限公司 照射光敏层上斑点的方法和装置
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
DE10303902B4 (de) * 2003-01-31 2004-12-09 Süss Microtec Lithography Gmbh Verfahren und Vorrichtung zum Ausrichten eines Justier-Mikroskops mittels verspiegelter Justiermaske
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR20180089562A (ko) 2003-04-10 2018-08-08 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
SG2014015135A (en) 2003-04-11 2015-06-29 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR101498405B1 (ko) 2003-04-11 2015-03-04 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6995833B2 (en) 2003-05-23 2006-02-07 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
KR20180122033A (ko) * 2003-05-28 2018-11-09 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007527615A (ja) 2003-07-01 2007-09-27 株式会社ニコン 同位体特定流体の光学素子としての使用方法
JP4697138B2 (ja) * 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
US20050007596A1 (en) 2003-07-11 2005-01-13 Wilks Enterprise, Inc. Apparatus and method for increasing the sensitivity of in-line infrared sensors
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) * 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
JP4288426B2 (ja) 2003-09-03 2009-07-01 株式会社ニコン 液浸リソグラフィのための流体の供給装置及び方法
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) * 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
TWI553701B (zh) 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
JP4524601B2 (ja) * 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
WO2005054953A2 (en) 2003-11-24 2005-06-16 Carl-Zeiss Smt Ag Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
KR100965330B1 (ko) 2003-12-15 2010-06-22 칼 짜이스 에스엠티 아게 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101417706B1 (ko) * 2004-01-14 2014-07-08 칼 짜이스 에스엠테 게엠베하 반사굴절식 투영 대물렌즈
KR101230757B1 (ko) 2004-01-16 2013-02-06 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (en) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
JP2007523383A (ja) 2004-02-18 2007-08-16 コーニング インコーポレイテッド 深紫外光による大開口数結像のための反射屈折結像光学系
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7513802B2 (en) 2004-03-23 2009-04-07 Leviton Manufacturing Company, Inc. Lamp base adapter
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
WO2005111722A2 (en) 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US8107162B2 (en) 2004-05-17 2012-01-31 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101199076B1 (ko) 2004-06-04 2012-11-07 칼 짜이스 에스엠티 게엠베하 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system

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