JP2010045406A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2010045406A
JP2010045406A JP2009266058A JP2009266058A JP2010045406A JP 2010045406 A JP2010045406 A JP 2010045406A JP 2009266058 A JP2009266058 A JP 2009266058A JP 2009266058 A JP2009266058 A JP 2009266058A JP 2010045406 A JP2010045406 A JP 2010045406A
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Prior art keywords
layer
film
wiring
insulating
insulating layer
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Japanese (ja)
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JP2010045406A5 (https=
Inventor
Jun Tanaka
順 田中
Yoshiharu Otani
美晴 大谷
Kiyoshi Ogata
潔 尾形
Yasumichi Suzuki
康道 鈴木
Katsuhiko Hotta
勝彦 堀田
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2009266058A priority Critical patent/JP2010045406A/ja
Publication of JP2010045406A publication Critical patent/JP2010045406A/ja
Publication of JP2010045406A5 publication Critical patent/JP2010045406A5/ja
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    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/086—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving buried masks
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    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
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    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
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    • H10P14/69—Inorganic materials
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
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    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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JP2009266058A 2002-04-12 2009-11-24 半導体装置の製造方法 Pending JP2010045406A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009266058A JP2010045406A (ja) 2002-04-12 2009-11-24 半導体装置の製造方法

Applications Claiming Priority (2)

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JP2002109901 2002-04-12
JP2009266058A JP2010045406A (ja) 2002-04-12 2009-11-24 半導体装置の製造方法

Related Parent Applications (1)

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JP2006013585A Division JP4443517B2 (ja) 2002-04-12 2006-01-23 半導体装置の製造方法

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JP2010045406A true JP2010045406A (ja) 2010-02-25
JP2010045406A5 JP2010045406A5 (https=) 2011-02-10

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JP2009266058A Pending JP2010045406A (ja) 2002-04-12 2009-11-24 半導体装置の製造方法

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US (5) US6838771B2 (https=)
JP (1) JP2010045406A (https=)
KR (2) KR100556641B1 (https=)
CN (2) CN101197372B (https=)
TW (2) TWI300971B (https=)

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