JP2010016347A - 薄膜トランジスタ、その製造方法及び薄膜トランジスタを備える平板表示装置 - Google Patents
薄膜トランジスタ、その製造方法及び薄膜トランジスタを備える平板表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 230000000087 stabilizing effect Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- -1 HfOx Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 229910005535 GaOx Inorganic materials 0.000 claims description 8
- 229910002616 GeOx Inorganic materials 0.000 claims description 8
- 229910017947 MgOx Inorganic materials 0.000 claims description 8
- 229910004541 SiN Inorganic materials 0.000 claims description 8
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 8
- 229910002347 SrOx Inorganic materials 0.000 claims description 8
- 229910003070 TaOx Inorganic materials 0.000 claims description 8
- 229910003134 ZrOx Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims 6
- 239000010410 layer Substances 0.000 description 168
- 230000006641 stabilisation Effects 0.000 description 10
- 238000011105 stabilization Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101150082527 ALAD gene Proteins 0.000 description 1
- 229910005265 GaInZnO Inorganic materials 0.000 description 1
- 229910005533 GaO Inorganic materials 0.000 description 1
- 229910016048 MoW Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Abstract
【解決手段】基板と、前記基板上に形成されたソース電極及びドレイン電極と、前記ソース電極及びドレイン電極と一部重なり、酸化物半導体からなる活性層と、ゲート絶縁層によって前記活性層と絶縁されるゲート電極と、前記活性層の上部面及び下部面のうちの少なくとも一面に形成された界面安定化層とを有し、前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物からなる。
【選択図】図1
Description
11、21、31 バッファ層
12a、22a、32a ソース電極
12b、22b、32b ドレイン電極
13、24、34 活性層
14、23、33、35 界面安定化層
15、25、36 ゲート絶縁層
16、26、37 ゲート電極
100 表示パネル
111 ゲート線
112 データ線
113 画素領域
114 薄膜トランジスタ
115 画素電極
130 液晶層
220 画素領域
224 走査ライン
226 データライン
230 非画素領域
300 有機電界発光素子
Claims (29)
- 基板と、
前記基板上に形成されたソース電極及びドレイン電極と、
前記ソース電極及びドレイン電極と一部重なり、酸化物半導体からなる活性層と、
ゲート絶縁層によって前記活性層と絶縁されるゲート電極と、
前記活性層の上部面及び下部面のうちの少なくとも一面に形成された界面安定化層とを有し、
前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物からなる薄膜トランジスタ。 - 前記酸化物半導体は、酸化亜鉛(ZnO)を含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記酸化物半導体にガリウム(Ga)、インジウム(In)、錫(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)及びバナジウム(V)のうちの少なくとも1つのイオンがドーピングされることを特徴とする請求項2に記載の薄膜トランジスタ。
- 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記界面安定化層の水素濃度は、10+19/cm3以下であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板上にソース電極及びドレイン電極を形成する段階と、
前記ソース電極及びドレイン電極を含む上部に界面安定化層及び酸化物半導体層を形成する段階と、
前記酸化物半導体層をパターニングして活性層を形成する段階と、
前記活性層を含む上部にゲート絶縁層を形成する段階と、
前記活性層上部の前記ゲート絶縁層上にゲート電極を形成する段階と
を含み、
前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物で形成する薄膜トランジスタの製造方法。 - 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、GdOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、物理蒸着方法により形成することを特徴とする請求項7に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、10〜20Åの厚さで形成することを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体は、酸化亜鉛(ZnO)を含むことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体にガリウム(Ga)、インジウム(In)、錫(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)及びバナジウム(V)のうちの少なくとも1つのイオンがドーピングされることを特徴とする請求項10に記載の薄膜トランジスタの製造方法。
- 前記活性層を形成する段階で前記界面安定化層をパターニングすることを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記活性層上に界面安定化層を形成する段階を更に含むことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、GdOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項13に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、物理蒸着方法により形成することを特徴とする請求項14に記載の薄膜トランジスタの製造方法。
- 基板上にソース電極及びドレイン電極を形成する段階と、
前記ソース電極及びドレイン電極を含む上部に酸化物半導体層及び界面安定化層を形成する段階と、
前記界面安定化層及び酸化物半導体層をパターニングして活性層を形成する段階と、
前記活性層を含む上部にゲート絶縁層を形成する段階と、
前記活性層上部の前記ゲート絶縁層上にゲート電極を形成する段階とを含み、
前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物で形成する薄膜トランジスタの製造方法。 - 前記酸化物半導体は、酸化亜鉛(ZnO)を含むことを特徴とする請求項16に記載の薄膜トランジスタの製造方法。
- 前記酸化物半導体にガリウム(Ga)、インジウム(In)、錫(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)及びバナジウム(V)のうちの少なくとも1つのイオンがドーピングされることを特徴とする請求項17に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、GdOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項16に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、物理蒸着方法により形成することを特徴とする請求項16に記載の薄膜トランジスタの製造方法。
- 前記界面安定化層は、50〜5000Åの厚さで形成することを特徴とする16に記載の薄膜トランジスタの製造方法。
- 多数の第1導電線と第2導電線により多数の画素が画定され、各画素に供給される信号を制御する薄膜トランジスタ及び薄膜トランジスタと連結される第1電極が形成された第1基板と、
第2電極が形成された第2基板と、
前記第1電極と第2電極との間の封止された空間に注入される液晶層とを有し、
前記薄膜トランジスタは前記第1基板上に形成されたソース電極及びドレイン電極と、
前記ソース電極及びドレイン電極と一部重なり、酸化物半導体からなる活性層と、
ゲート絶縁層によって前記活性層と絶縁されるゲート電極と、
前記活性層の上部面及び下部面のうちの少なくとも一面に形成された界面安定化層とを有し、
前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物からなる平板表示装置。 - 前記酸化物半導体は、酸化亜鉛(ZnO)を含むことを特徴とする請求項22に記載の薄膜トランジスタ。
- 前記酸化物半導体にガリウム(Ga)、インジウム(In)、錫(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)及びバナジウム(V)のうちの少なくとも1つのイオンがドーピングされることを特徴とする請求項23に記載の薄膜トランジスタ。
- 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、GdOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項22に記載の薄膜トランジスタ。
- 第1電極、有機薄膜層及び第2電極からなる有機電界発光素子と、前記有機電界発光素子の動作を制御するための薄膜トランジスタが形成された第1基板と、
前記第1基板に対向するように配置された第2基板とを有し、
前記薄膜トランジスタは前記第1基板上に形成されたソース電極及びドレイン電極と、
前記ソース電極及びドレイン電極と一部重なり、酸化物半導体からなる活性層と、
ゲート絶縁層によって前記活性層と絶縁されるゲート電極と、
前記活性層の上部面及び下部面のうちの少なくとも一面に形成された界面安定化層とを有し、
前記界面安定化層は3.0〜8.0eVのバンドギャップを有する酸化物からなる平板表示装置。 - 前記酸化物半導体は、酸化亜鉛(ZnO)を含むことを特徴とする請求項26に記載の平板表示装置。
- 前記酸化物半導体にガリウム(Ga)、インジウム(In)、錫(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)及びバナジウム(V)のうちの少なくとも1つのイオンがドーピングされることを特徴とする請求項27に記載の平板表示装置。
- 前記界面安定化層は、SiOx、SiN、SiOxNy、SiOxCy、SiOxCyHz、SiOxFy、GeOx、GdOx、AlOx、GaOx、SbO、ZrOx、HfOx、TaOx、YOx、VOx、MgOx、CaOx、BaOx、SrOx及びSOGからなる群より選択されることを特徴とする請求項26に記載の平板表示装置。
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Cited By (163)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010073881A (ja) * | 2008-09-18 | 2010-04-02 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
KR20100092882A (ko) * | 2009-02-13 | 2010-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 구비한 반도체 장치 및 그 제작 방법 |
WO2011114866A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
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KR20110112030A (ko) * | 2010-04-06 | 2011-10-12 | 삼성전자주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
JP2011228679A (ja) * | 2010-03-31 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2011228693A (ja) * | 2010-04-02 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2011228695A (ja) * | 2010-04-02 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012009845A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
WO2012073918A1 (en) * | 2010-11-30 | 2012-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP2012256915A (ja) * | 2010-05-20 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US8367489B2 (en) | 2009-11-28 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a stacked oxide material for thin film transistor |
JP2013038402A (ja) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8384079B2 (en) | 2009-07-31 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device |
JP2013042121A (ja) * | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8420441B2 (en) | 2009-07-31 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device |
US8421067B2 (en) | 2009-07-31 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device |
US8421083B2 (en) | 2009-07-31 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with two oxide semiconductor layers and manufacturing method thereof |
US8440510B2 (en) | 2010-05-14 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013093572A (ja) * | 2011-10-05 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2013110427A (ja) * | 2010-04-23 | 2013-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US8461584B2 (en) | 2010-03-26 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal oxide film |
US8492758B2 (en) | 2009-09-24 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US8492757B2 (en) | 2009-03-06 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8518761B2 (en) | 2010-04-16 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing semiconductor device |
US8530285B2 (en) | 2009-12-28 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8546225B2 (en) | 2010-04-23 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8546180B2 (en) | 2009-07-31 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device |
US8551810B2 (en) | 2010-03-26 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8558233B2 (en) | 2009-12-08 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8570070B2 (en) | 2009-10-30 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
JP2013541226A (ja) * | 2010-10-29 | 2013-11-07 | シーブライト・インコーポレイテッド | 改善された安定性を有する金属酸化物薄膜トランジスタ |
US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US8586905B2 (en) | 2010-02-12 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8610120B2 (en) | 2010-09-15 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8628987B2 (en) | 2010-08-27 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device |
JP2014007398A (ja) * | 2012-06-01 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
US8659013B2 (en) | 2010-04-09 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8664036B2 (en) | 2009-12-18 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8669556B2 (en) | 2010-12-03 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8674354B2 (en) | 2010-02-05 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with an oxide semiconductor including a crystal region |
WO2014046222A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2014046220A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8692823B2 (en) | 2010-08-06 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method of the same |
US8698214B2 (en) | 2011-10-27 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8704219B2 (en) | 2010-03-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8710762B2 (en) | 2010-06-10 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8723176B2 (en) | 2012-02-02 | 2014-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2014099845A (ja) * | 2012-10-17 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | プログラマブルロジックデバイス |
US8748881B2 (en) | 2009-11-28 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8748215B2 (en) | 2009-11-28 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
US8765522B2 (en) | 2009-11-28 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
US8780629B2 (en) | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8785928B2 (en) | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8790960B2 (en) | 2010-04-28 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809852B2 (en) | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
US8828811B2 (en) | 2010-04-23 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment |
US8841163B2 (en) | 2009-12-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device comprising oxide semiconductor |
US8848449B2 (en) | 2011-05-20 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for driving memory device |
US8866138B2 (en) | 2009-12-04 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including the same |
US8866984B2 (en) | 2010-01-24 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8865534B2 (en) | 2010-04-23 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8878173B2 (en) | 2010-07-02 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor and metal oxide |
US8890152B2 (en) | 2011-06-17 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8906737B2 (en) | 2010-06-18 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8916867B2 (en) | 2011-01-20 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
US8916865B2 (en) | 2010-06-18 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8936965B2 (en) | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8945982B2 (en) | 2010-04-23 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8946702B2 (en) | 2012-04-13 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952380B2 (en) | 2011-10-27 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US8952381B2 (en) | 2012-06-29 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8981372B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
JP2015053486A (ja) * | 2009-09-16 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8987727B2 (en) | 2011-01-28 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US8987731B2 (en) | 2012-05-31 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US9029852B2 (en) | 2011-09-29 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
US9058047B2 (en) | 2010-08-26 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9059295B2 (en) | 2010-04-02 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having an oxide semiconductor and metal oxide films |
US9064966B2 (en) | 2012-12-28 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor |
JP2015122510A (ja) * | 2010-02-26 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9082863B2 (en) | 2012-08-10 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9093328B2 (en) | 2009-11-06 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof |
US9093542B2 (en) | 2011-04-22 | 2015-07-28 | Kobe Steel, Ltd. | Thin-film transistor structure, as well as thin-film transistor and display device each having said structure |
US9147768B2 (en) | 2010-04-02 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor and a metal oxide film |
US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9166021B2 (en) | 2012-10-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9184245B2 (en) | 2012-08-10 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US9190522B2 (en) | 2010-04-02 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor |
US9196739B2 (en) | 2010-04-02 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film and metal oxide film |
US9202926B2 (en) | 2012-06-06 | 2015-12-01 | Kobe Steel, Ltd. | Thin film transistor |
US9209256B2 (en) | 2012-08-02 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9236377B2 (en) | 2009-09-10 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US9240492B2 (en) | 2012-08-10 | 2016-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US9246011B2 (en) | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9276125B2 (en) | 2013-03-01 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9281408B2 (en) | 2013-05-20 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293540B2 (en) | 2012-12-03 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293544B2 (en) | 2013-02-26 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried channel structure |
US9293589B2 (en) | 2012-01-25 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9293592B2 (en) | 2013-10-11 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9318507B2 (en) | 2012-08-31 | 2016-04-19 | Kobe Steel, Ltd. | Thin film transistor and display device |
KR101614913B1 (ko) * | 2014-07-25 | 2016-04-25 | 한국철도기술연구원 | 태양전지 |
US9324875B2 (en) | 2012-10-17 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9324882B2 (en) | 2012-06-06 | 2016-04-26 | Kobe Steel, Ltd. | Thin film transistor |
US9324810B2 (en) | 2012-11-30 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film |
US9337344B2 (en) | 2013-05-09 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9362411B2 (en) | 2012-04-16 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9362313B2 (en) | 2012-05-09 | 2016-06-07 | Kobe Steel, Ltd. | Thin film transistor and display device |
US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9412876B2 (en) | 2014-02-07 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9412877B2 (en) | 2013-02-12 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160102363A (ko) * | 2016-08-16 | 2016-08-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
US9437743B2 (en) | 2010-10-07 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US9496412B2 (en) | 2014-07-15 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
US9496408B2 (en) | 2012-05-31 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
US9576982B2 (en) | 2011-11-11 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, EL display device, and manufacturing method thereof |
US9595435B2 (en) | 2012-10-19 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device |
JP2017063220A (ja) * | 2010-07-27 | 2017-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9627545B2 (en) | 2013-04-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9647126B2 (en) | 2012-05-30 | 2017-05-09 | Kobe Steel, Ltd. | Oxide for semiconductor layer in thin film transistor, thin film transistor, display device, and sputtering target |
US9660093B2 (en) | 2012-10-17 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with multilayer film including oxide semiconductor layer and oxide layer |
US9673336B2 (en) | 2011-01-12 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2017103495A (ja) * | 2012-10-24 | 2017-06-08 | 株式会社半導体エネルギー研究所 | トランジスタ及びその作製方法 |
JP2017108161A (ja) * | 2017-02-20 | 2017-06-15 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
US9734780B2 (en) | 2010-07-01 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US9755082B2 (en) | 2010-06-11 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen |
US9812585B2 (en) | 2013-10-04 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
US9837551B2 (en) | 2013-05-02 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9865743B2 (en) | 2012-10-24 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide layer surrounding oxide semiconductor layer |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9935202B2 (en) | 2009-09-16 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device comprising oxide semiconductor layer |
US10014414B2 (en) | 2013-02-28 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2019004185A (ja) * | 2010-05-21 | 2019-01-10 | 株式会社半導体エネルギー研究所 | トランジスタ |
US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
JP2019096909A (ja) * | 2011-01-12 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US10367095B2 (en) | 2015-03-03 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
US10490553B2 (en) | 2009-10-29 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10566457B2 (en) | 2012-08-31 | 2020-02-18 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Thin film transistor and display device |
US10872982B2 (en) | 2012-02-28 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2021113973A (ja) * | 2010-02-11 | 2021-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP7421003B2 (ja) | 2009-09-24 | 2024-01-23 | 株式会社半導体エネルギー研究所 | トランジスタ、発光表示装置、半導体装置 |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR101657957B1 (ko) | 2008-09-12 | 2016-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
TWI478356B (zh) | 2008-10-31 | 2015-03-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
TWI506795B (zh) * | 2008-11-28 | 2015-11-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
KR101648927B1 (ko) * | 2009-01-16 | 2016-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
KR20120031026A (ko) * | 2009-06-30 | 2012-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
WO2011033915A1 (en) | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2011048945A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the same |
KR101082254B1 (ko) * | 2009-11-04 | 2011-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
KR101073272B1 (ko) * | 2009-11-04 | 2011-10-12 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치의 제조 방법 |
WO2011055620A1 (en) | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101117737B1 (ko) | 2010-03-02 | 2012-02-24 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101878206B1 (ko) | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
US8653514B2 (en) | 2010-04-09 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103500709B (zh) | 2010-04-23 | 2015-09-23 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
KR20110139394A (ko) * | 2010-06-23 | 2011-12-29 | 주성엔지니어링(주) | 박막 트랜지스터 및 그 제조 방법 |
US8642380B2 (en) * | 2010-07-02 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8835917B2 (en) | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
KR101932576B1 (ko) | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20120037838A (ko) * | 2010-10-12 | 2012-04-20 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자소자 |
JP5723262B2 (ja) | 2010-12-02 | 2015-05-27 | 株式会社神戸製鋼所 | 薄膜トランジスタおよびスパッタリングターゲット |
TWI624878B (zh) | 2011-03-11 | 2018-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
KR101830170B1 (ko) * | 2011-05-17 | 2018-02-21 | 삼성디스플레이 주식회사 | 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법 |
US9299852B2 (en) * | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9214474B2 (en) | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8748886B2 (en) * | 2011-07-08 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9252279B2 (en) * | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102108572B1 (ko) | 2011-09-26 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
SG10201601757UA (en) | 2011-10-14 | 2016-04-28 | Semiconductor Energy Lab | Semiconductor device |
KR20130040706A (ko) | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8829528B2 (en) | 2011-11-25 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including groove portion extending beyond pixel electrode |
JP6033071B2 (ja) | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8841665B2 (en) | 2012-04-06 | 2014-09-23 | Electronics And Telecommunications Research Institute | Method for manufacturing oxide thin film transistor |
JP5636392B2 (ja) * | 2012-05-24 | 2014-12-03 | 株式会社東芝 | 表示装置 |
US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
SG11201505225TA (en) | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
KR102042483B1 (ko) * | 2012-09-24 | 2019-11-12 | 한국전자통신연구원 | 박막 트랜지스터 및 그 제조 방법 |
JP6351947B2 (ja) | 2012-10-12 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
TWI681233B (zh) | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法 |
JP5951442B2 (ja) * | 2012-10-17 | 2016-07-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2014061762A1 (en) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9153649B2 (en) | 2012-11-30 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for evaluating semiconductor device |
US9406810B2 (en) | 2012-12-03 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6329762B2 (ja) | 2012-12-28 | 2018-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102178766B1 (ko) * | 2013-03-29 | 2020-11-13 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치 |
CN103367165A (zh) * | 2013-07-01 | 2013-10-23 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示器 |
TWI632688B (zh) | 2013-07-25 | 2018-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
JP6460592B2 (ja) | 2013-07-31 | 2019-01-30 | 株式会社半導体エネルギー研究所 | Dcdcコンバータ、及び半導体装置 |
JP6345023B2 (ja) * | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
TWI677989B (zh) | 2013-09-19 | 2019-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6570817B2 (ja) | 2013-09-23 | 2019-09-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015084418A (ja) | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN103531639B (zh) | 2013-10-22 | 2016-09-07 | 合肥京东方光电科技有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
TWI665778B (zh) * | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
KR102174888B1 (ko) | 2014-02-12 | 2020-11-06 | 삼성디스플레이 주식회사 | 게이트 구동 회로 및 이를 포함하는 표시 장치 |
TWI675004B (zh) | 2014-02-21 | 2019-10-21 | 日商半導體能源研究所股份有限公司 | 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置 |
TWI581317B (zh) * | 2014-11-14 | 2017-05-01 | 群創光電股份有限公司 | 薄膜電晶體基板及具備該薄膜電晶體基板之顯示面板 |
WO2016115481A1 (en) * | 2015-01-16 | 2016-07-21 | Idaho State University | Devices and methods for converting energy from radiation into electrical power |
KR102313978B1 (ko) | 2015-01-21 | 2021-10-19 | 삼성디스플레이 주식회사 | 게이트 구동회로 |
CN107210230B (zh) | 2015-02-12 | 2022-02-11 | 株式会社半导体能源研究所 | 氧化物半导体膜及半导体装置 |
US10008609B2 (en) | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
KR102281753B1 (ko) | 2015-04-14 | 2021-07-27 | 삼성디스플레이 주식회사 | 스테이지 회로 및 이를 이용한 주사 구동부 |
US20160308067A1 (en) * | 2015-04-17 | 2016-10-20 | Ishiang Shih | Metal oxynitride transistor devices |
US10002970B2 (en) | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
TWI650817B (zh) | 2015-08-28 | 2019-02-11 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
CN105720198B (zh) * | 2016-03-08 | 2018-05-15 | 中国计量学院 | 一种温度控制开关的有机异质结光敏场效应晶体管及其制备方法 |
KR102458660B1 (ko) | 2016-08-03 | 2022-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
JP6782211B2 (ja) * | 2017-09-08 | 2020-11-11 | 株式会社東芝 | 透明電極、それを用いた素子、および素子の製造方法 |
JPWO2019111105A1 (ja) | 2017-12-06 | 2020-12-03 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
WO2019204977A1 (zh) * | 2018-04-24 | 2019-10-31 | 深圳市柔宇科技有限公司 | 阵列基板及其制备方法、显示装置 |
KR102142268B1 (ko) * | 2018-06-25 | 2020-08-12 | 삼성전자 주식회사 | 전이금속에 의해 결정화 유도된 다결정질 금속 산화물 채널층을 구비하는 박막트랜지스터 및 수직형 비휘발성 메모리 소자 |
CN109888023B (zh) * | 2019-03-25 | 2022-06-21 | 广州新视界光电科技有限公司 | 一种顶栅型薄膜晶体管及其制作方法 |
CN110190066A (zh) * | 2019-05-14 | 2019-08-30 | 深圳市华星光电技术有限公司 | 阵列基板和阵列基板的制备方法 |
CN112530978B (zh) * | 2020-12-01 | 2024-02-13 | 京东方科技集团股份有限公司 | 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033172A (ja) * | 2003-06-20 | 2005-02-03 | Sharp Corp | 半導体装置およびその製造方法ならびに電子デバイス |
JP2008276212A (ja) * | 2007-04-05 | 2008-11-13 | Fujifilm Corp | 有機電界発光表示装置 |
JP2009231613A (ja) * | 2008-03-24 | 2009-10-08 | Fujifilm Corp | 薄膜電界効果型トランジスタおよび表示装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100272260B1 (ko) | 1996-11-27 | 2000-11-15 | 김영환 | 유사다이아몬드를 이용한 박막트랜지스터 및 그의 제조방법 |
KR19980065168A (ko) | 1997-01-03 | 1998-10-15 | 장진 | 불소가 함유된 산화막을 게이트 절연막으로 이용한 박막 트랜지스터 및 그 제조 방법 |
KR20030010122A (ko) | 2001-07-25 | 2003-02-05 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치의 형성방법 |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
WO2003098699A1 (en) * | 2002-05-22 | 2003-11-27 | Sharp Kabushiki Kaisha | Semiconductor device and display comprising same |
KR200310122Y1 (ko) | 2002-12-06 | 2003-04-08 | 원 회 양 | 월유에 의한 해수교환 방파제 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2007073561A (ja) | 2005-09-02 | 2007-03-22 | Kochi Prefecture Sangyo Shinko Center | 薄膜トランジスタ |
JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
KR101174780B1 (ko) | 2005-09-14 | 2012-08-20 | 엘지디스플레이 주식회사 | 박막트랜지스터의 제조방법 및 이를 적용한 액정표시소자의제조방법 |
KR100786498B1 (ko) | 2005-09-27 | 2007-12-17 | 삼성에스디아이 주식회사 | 투명박막 트랜지스터 및 그 제조방법 |
JP4907942B2 (ja) | 2005-09-29 | 2012-04-04 | シャープ株式会社 | トランジスタおよび電子デバイス |
JP2007294709A (ja) | 2006-04-26 | 2007-11-08 | Epson Imaging Devices Corp | 電気光学装置、電子機器、および電気光学装置の製造方法 |
KR20080002414A (ko) | 2006-06-30 | 2008-01-04 | 단국대학교 산학협력단 | 게이트 절연막과 유기 반도체층 간에 계면안정화층을형성시킨 유기 박막 트랜지스터 및 그의 제조 방법 |
JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
KR20080082414A (ko) | 2007-03-14 | 2008-09-11 | 김경택 | 핸드폰의 한글입력방식 |
KR100858821B1 (ko) * | 2007-05-11 | 2008-09-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터와 그 제조 방법 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치와 그 제조방법 |
KR100873081B1 (ko) * | 2007-05-29 | 2008-12-09 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963027B1 (ko) * | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
-
2008
- 2008-06-30 KR KR1020080062417A patent/KR100963026B1/ko active IP Right Grant
-
2009
- 2009-02-26 JP JP2009044309A patent/JP5474372B2/ja active Active
- 2009-04-16 US US12/424,860 patent/US7994500B2/en active Active
- 2009-05-08 CN CN2009101385689A patent/CN101621076B/zh active Active
- 2009-06-30 EP EP09251688A patent/EP2141744A1/en not_active Ceased
-
2011
- 2011-04-21 US US13/091,614 patent/US8541258B2/en active Active
-
2013
- 2013-05-08 US US13/889,752 patent/US8659016B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033172A (ja) * | 2003-06-20 | 2005-02-03 | Sharp Corp | 半導体装置およびその製造方法ならびに電子デバイス |
JP2008276212A (ja) * | 2007-04-05 | 2008-11-13 | Fujifilm Corp | 有機電界発光表示装置 |
JP2009231613A (ja) * | 2008-03-24 | 2009-10-08 | Fujifilm Corp | 薄膜電界効果型トランジスタおよび表示装置 |
Cited By (488)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010073881A (ja) * | 2008-09-18 | 2010-04-02 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
KR20100092882A (ko) * | 2009-02-13 | 2010-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 구비한 반도체 장치 및 그 제작 방법 |
KR101667368B1 (ko) | 2009-02-13 | 2016-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 구비한 반도체 장치 및 그 제작 방법 |
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US10396097B2 (en) | 2009-07-31 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device |
US20180138211A1 (en) | 2009-07-31 | 2018-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor device |
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US10079306B2 (en) | 2009-07-31 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11348949B2 (en) | 2009-07-31 | 2022-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8822990B2 (en) | 2009-07-31 | 2014-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809856B2 (en) | 2009-07-31 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US8664036B2 (en) | 2009-12-18 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9391095B2 (en) | 2009-12-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9859401B2 (en) | 2009-12-28 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8686425B2 (en) | 2009-12-28 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10141425B2 (en) | 2009-12-28 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9054134B2 (en) | 2009-12-28 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8530285B2 (en) | 2009-12-28 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9136280B2 (en) | 2010-01-15 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8780629B2 (en) | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US9117732B2 (en) | 2010-01-24 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US8866984B2 (en) | 2010-01-24 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11362112B2 (en) | 2010-01-24 | 2022-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11935896B2 (en) | 2010-01-24 | 2024-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US9202923B2 (en) | 2010-02-05 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor |
US11469255B2 (en) | 2010-02-05 | 2022-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9728555B2 (en) | 2010-02-05 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10615179B2 (en) | 2010-02-05 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9991288B2 (en) | 2010-02-05 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11101295B2 (en) | 2010-02-05 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8878180B2 (en) | 2010-02-05 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11749686B2 (en) | 2010-02-05 | 2023-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8674354B2 (en) | 2010-02-05 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with an oxide semiconductor including a crystal region |
JP2021113973A (ja) * | 2010-02-11 | 2021-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11500254B2 (en) | 2010-02-11 | 2022-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP7213285B2 (ja) | 2010-02-11 | 2023-01-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9024248B2 (en) | 2010-02-12 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region |
US10916573B2 (en) | 2010-02-12 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8586905B2 (en) | 2010-02-12 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US10535689B2 (en) | 2010-02-12 | 2020-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
JP2011192971A (ja) * | 2010-02-16 | 2011-09-29 | Ricoh Co Ltd | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
JP2015122510A (ja) * | 2010-02-26 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9613964B2 (en) | 2010-02-26 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory cell |
US10128247B2 (en) | 2010-02-26 | 2018-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having memory cell utilizing oxide semiconductor material |
US8711623B2 (en) | 2010-03-17 | 2014-04-29 | Semicondoctor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
WO2011114866A1 (en) * | 2010-03-17 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US8422298B2 (en) | 2010-03-17 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US9406786B2 (en) | 2010-03-26 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9064898B2 (en) | 2010-03-26 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9012908B2 (en) | 2010-03-26 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal oxide film |
US9425295B2 (en) | 2010-03-26 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8551810B2 (en) | 2010-03-26 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8704219B2 (en) | 2010-03-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9954084B2 (en) | 2010-03-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8461584B2 (en) | 2010-03-26 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with metal oxide film |
US9941414B2 (en) | 2010-03-26 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide semiconductor device |
JP2011228679A (ja) * | 2010-03-31 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2015164201A (ja) * | 2010-03-31 | 2015-09-10 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP2018113474A (ja) * | 2010-03-31 | 2018-07-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP7101852B2 (ja) | 2010-03-31 | 2022-07-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2021184098A (ja) * | 2010-03-31 | 2021-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2011228693A (ja) * | 2010-04-02 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2017055134A (ja) * | 2010-04-02 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020205453A (ja) * | 2010-04-02 | 2020-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9190522B2 (en) | 2010-04-02 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor |
KR20200144595A (ko) | 2010-04-02 | 2020-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2021010009A (ja) * | 2010-04-02 | 2021-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018113459A (ja) * | 2010-04-02 | 2018-07-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9147768B2 (en) | 2010-04-02 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor and a metal oxide film |
JP2019149584A (ja) * | 2010-04-02 | 2019-09-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020174192A (ja) * | 2010-04-02 | 2020-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20200093701A (ko) | 2010-04-02 | 2020-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20200087277A (ko) | 2010-04-02 | 2020-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20210088020A (ko) | 2010-04-02 | 2021-07-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015144311A (ja) * | 2010-04-02 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20210102500A (ko) | 2010-04-02 | 2021-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10714626B2 (en) | 2010-04-02 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9059295B2 (en) | 2010-04-02 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having an oxide semiconductor and metal oxide films |
US8502221B2 (en) | 2010-04-02 | 2013-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with two metal oxide films and an oxide semiconductor film |
KR20180031065A (ko) | 2010-04-02 | 2018-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2016157989A (ja) * | 2010-04-02 | 2016-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018164106A (ja) * | 2010-04-02 | 2018-10-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9196739B2 (en) | 2010-04-02 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film and metal oxide film |
JP2014099628A (ja) * | 2010-04-02 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2016028437A (ja) * | 2010-04-02 | 2016-02-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018037694A (ja) * | 2010-04-02 | 2018-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017085150A (ja) * | 2010-04-02 | 2017-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2011228695A (ja) * | 2010-04-02 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US10608116B2 (en) | 2010-04-02 | 2020-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2019153793A (ja) * | 2010-04-02 | 2019-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11380800B2 (en) | 2010-04-02 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20200008065A (ko) | 2010-04-02 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US11411121B2 (en) | 2010-04-02 | 2022-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9842937B2 (en) | 2010-04-02 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide semiconductor film and a metal oxide film |
KR20220119771A (ko) | 2010-04-02 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2022130671A (ja) * | 2010-04-02 | 2022-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8884282B2 (en) | 2010-04-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20190049949A (ko) | 2010-04-02 | 2019-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2019140421A (ja) * | 2010-04-02 | 2019-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7416867B2 (ja) | 2010-04-02 | 2024-01-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9318613B2 (en) | 2010-04-02 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Transistor having two metal oxide films and an oxide semiconductor film |
US9793412B2 (en) | 2010-04-02 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20110112030A (ko) * | 2010-04-06 | 2011-10-12 | 삼성전자주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
KR101706081B1 (ko) * | 2010-04-06 | 2017-02-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
US10510777B2 (en) | 2010-04-09 | 2019-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10879274B2 (en) | 2010-04-09 | 2020-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8659013B2 (en) | 2010-04-09 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20180087473A (ko) | 2010-04-09 | 2018-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9431429B2 (en) | 2010-04-09 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9059047B2 (en) | 2010-04-09 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20180041263A (ko) | 2010-04-09 | 2018-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10008515B2 (en) | 2010-04-09 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8518761B2 (en) | 2010-04-16 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing semiconductor device |
US9698008B2 (en) | 2010-04-16 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing semiconductor device |
US9006046B2 (en) | 2010-04-16 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing semiconductor device |
US10529556B2 (en) | 2010-04-16 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing semiconductor device |
US9390918B2 (en) | 2010-04-23 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8945982B2 (en) | 2010-04-23 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9978878B2 (en) | 2010-04-23 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9147754B2 (en) | 2010-04-23 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8546225B2 (en) | 2010-04-23 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8865534B2 (en) | 2010-04-23 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013110427A (ja) * | 2010-04-23 | 2013-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2013140989A (ja) * | 2010-04-23 | 2013-07-18 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9202877B2 (en) | 2010-04-23 | 2015-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8828811B2 (en) | 2010-04-23 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment |
US8461007B2 (en) | 2010-04-23 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9812533B2 (en) | 2010-04-23 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2016119488A (ja) * | 2010-04-28 | 2016-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9449852B2 (en) | 2010-04-28 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8790960B2 (en) | 2010-04-28 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8440510B2 (en) | 2010-05-14 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2013065864A (ja) * | 2010-05-20 | 2013-04-11 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9490368B2 (en) | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP2017183754A (ja) * | 2010-05-20 | 2017-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016076733A (ja) * | 2010-05-20 | 2016-05-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10468531B2 (en) | 2010-05-20 | 2019-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP2012256915A (ja) * | 2010-05-20 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2012009845A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9443988B2 (en) | 2010-05-21 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9842939B2 (en) | 2010-05-21 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2017228806A (ja) * | 2010-05-21 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9142648B2 (en) | 2010-05-21 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2019004185A (ja) * | 2010-05-21 | 2019-01-10 | 株式会社半導体エネルギー研究所 | トランジスタ |
US9601602B2 (en) | 2010-05-21 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9543835B2 (en) | 2010-06-10 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
US8710762B2 (en) | 2010-06-10 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | DC/DC converter, power supply circuit, and semiconductor device |
US9755082B2 (en) | 2010-06-11 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen |
US9911866B2 (en) | 2010-06-16 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
JP2017050559A (ja) * | 2010-06-16 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 電界効果トランジスタ |
US9472683B2 (en) | 2010-06-16 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
US9281412B2 (en) | 2010-06-16 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
JP2016028449A (ja) * | 2010-06-16 | 2016-02-25 | 株式会社半導体エネルギー研究所 | 電界効果トランジスタ |
US9590112B2 (en) | 2010-06-18 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8906737B2 (en) | 2010-06-18 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9252103B2 (en) | 2010-06-18 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8916865B2 (en) | 2010-06-18 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9947799B2 (en) | 2010-06-18 | 2018-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9734780B2 (en) | 2010-07-01 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US10008169B2 (en) | 2010-07-01 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of liquid crystal display device |
US8878173B2 (en) | 2010-07-02 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor and metal oxide |
US9449991B2 (en) | 2010-07-02 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having circular light-blocking layer |
US10522689B2 (en) | 2010-07-27 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2018198320A (ja) * | 2010-07-27 | 2018-12-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017063220A (ja) * | 2010-07-27 | 2017-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8692823B2 (en) | 2010-08-06 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method of the same |
US8890859B2 (en) | 2010-08-06 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method of the same |
US9058047B2 (en) | 2010-08-26 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8628987B2 (en) | 2010-08-27 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device |
US8912544B2 (en) | 2010-09-13 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
US9305944B2 (en) | 2010-09-13 | 2016-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US11417688B2 (en) | 2010-09-13 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US10522572B2 (en) | 2010-09-13 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US11024655B2 (en) | 2010-09-13 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US9917112B2 (en) | 2010-09-13 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
US11682678B2 (en) | 2010-09-13 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8610120B2 (en) | 2010-09-15 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
US9437743B2 (en) | 2010-10-07 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
US9917197B2 (en) | 2010-10-07 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Thin film element, semiconductor device, and method for manufacturing the same |
JP2013541226A (ja) * | 2010-10-29 | 2013-11-07 | シーブライト・インコーポレイテッド | 改善された安定性を有する金属酸化物薄膜トランジスタ |
US8936965B2 (en) | 2010-11-26 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9281358B2 (en) | 2010-11-30 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
WO2012073918A1 (en) * | 2010-11-30 | 2012-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8728883B2 (en) | 2010-11-30 | 2014-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9634082B2 (en) | 2010-11-30 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8809852B2 (en) | 2010-11-30 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same |
JP2018182343A (ja) * | 2010-12-03 | 2018-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8680522B2 (en) | 2010-12-03 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US9711655B2 (en) | 2010-12-03 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US10916663B2 (en) | 2010-12-03 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US8994021B2 (en) | 2010-12-03 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
JP2020043363A (ja) * | 2010-12-03 | 2020-03-19 | 株式会社半導体エネルギー研究所 | トランジスタ |
US8669556B2 (en) | 2010-12-03 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2017050553A (ja) * | 2010-12-03 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9331208B2 (en) | 2010-12-03 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
US10103277B2 (en) | 2010-12-03 | 2018-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide semiconductor film |
US9735179B2 (en) | 2010-12-24 | 2017-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
US10170633B2 (en) | 2011-01-12 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10593786B2 (en) | 2011-01-12 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of the semiconductor device |
US9570484B2 (en) | 2011-01-12 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9673336B2 (en) | 2011-01-12 | 2017-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8536571B2 (en) | 2011-01-12 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US8921948B2 (en) | 2011-01-12 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2019096909A (ja) * | 2011-01-12 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US9166026B2 (en) | 2011-01-12 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP2018014530A (ja) * | 2011-01-20 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9337347B2 (en) | 2011-01-20 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
JP2016154251A (ja) * | 2011-01-20 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9917206B2 (en) | 2011-01-20 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
US8916867B2 (en) | 2011-01-20 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor element and semiconductor device |
US9299815B2 (en) | 2011-01-28 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US8987727B2 (en) | 2011-01-28 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and semiconductor device |
US9093542B2 (en) | 2011-04-22 | 2015-07-28 | Kobe Steel, Ltd. | Thin-film transistor structure, as well as thin-film transistor and display device each having said structure |
US9379248B2 (en) | 2011-04-22 | 2016-06-28 | Kobe Steel, Ltd. | Thin-film transistor structure, as well as thin-film transistor and display device each having said structure |
US8709922B2 (en) | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9900007B2 (en) | 2011-05-19 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9595964B2 (en) | 2011-05-19 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US8848449B2 (en) | 2011-05-20 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for driving memory device |
US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8890152B2 (en) | 2011-06-17 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9601636B2 (en) | 2011-06-17 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9287409B2 (en) | 2011-06-17 | 2016-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10439072B2 (en) | 2011-07-08 | 2019-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11011652B2 (en) | 2011-07-08 | 2021-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10043918B2 (en) | 2011-07-08 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2021101467A (ja) * | 2011-07-08 | 2021-07-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9196745B2 (en) | 2011-07-08 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9385238B2 (en) | 2011-07-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor using oxide semiconductor |
US9837548B2 (en) | 2011-07-08 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013038402A (ja) * | 2011-07-08 | 2013-02-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2017139494A (ja) * | 2011-07-08 | 2017-08-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022089841A (ja) * | 2011-07-08 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11588058B2 (en) | 2011-07-08 | 2023-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9530897B2 (en) | 2011-07-08 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10658522B2 (en) | 2011-07-08 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2013042121A (ja) * | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US9472677B2 (en) | 2011-07-15 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10622485B2 (en) | 2011-09-29 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217701B2 (en) | 2011-09-29 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9029852B2 (en) | 2011-09-29 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9741860B2 (en) | 2011-09-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10290744B2 (en) | 2011-09-29 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11791415B2 (en) | 2011-09-29 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9876119B2 (en) | 2011-10-05 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2017168867A (ja) * | 2011-10-05 | 2017-09-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2013093572A (ja) * | 2011-10-05 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US9105734B2 (en) | 2011-10-27 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9530895B2 (en) | 2011-10-27 | 2016-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8698214B2 (en) | 2011-10-27 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8952380B2 (en) | 2011-10-27 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9576982B2 (en) | 2011-11-11 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, EL display device, and manufacturing method thereof |
US8796683B2 (en) | 2011-12-23 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9559213B2 (en) | 2011-12-23 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9166061B2 (en) | 2011-12-23 | 2015-10-20 | Semiconcductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10243081B2 (en) | 2012-01-25 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9293589B2 (en) | 2012-01-25 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8723176B2 (en) | 2012-02-02 | 2014-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8946704B2 (en) | 2012-02-02 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812582B2 (en) | 2012-02-02 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9214566B2 (en) | 2012-02-02 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10872982B2 (en) | 2012-02-28 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9472679B2 (en) | 2012-04-13 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11929437B2 (en) | 2012-04-13 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising various thin-film transistors |
US11355645B2 (en) | 2012-04-13 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising stacked oxide semiconductor layers |
US10559699B2 (en) | 2012-04-13 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8946702B2 (en) | 2012-04-13 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10872981B2 (en) | 2012-04-13 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor |
US10158026B2 (en) | 2012-04-13 | 2018-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stacked layers |
US9362411B2 (en) | 2012-04-16 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
US11217699B2 (en) | 2012-04-30 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11837666B2 (en) | 2012-04-30 | 2023-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9660097B2 (en) | 2012-04-30 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20170323974A1 (en) | 2012-04-30 | 2017-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10403762B2 (en) | 2012-04-30 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9362313B2 (en) | 2012-05-09 | 2016-06-07 | Kobe Steel, Ltd. | Thin film transistor and display device |
US9647126B2 (en) | 2012-05-30 | 2017-05-09 | Kobe Steel, Ltd. | Oxide for semiconductor layer in thin film transistor, thin film transistor, display device, and sputtering target |
US9224758B2 (en) | 2012-05-31 | 2015-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8785928B2 (en) | 2012-05-31 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9276091B2 (en) | 2012-05-31 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9741865B2 (en) | 2012-05-31 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
US9899536B2 (en) | 2012-05-31 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming semiconductor device with different energy gap oxide semiconductor stacked layers |
US8987731B2 (en) | 2012-05-31 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10134909B2 (en) | 2012-05-31 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
US9799290B2 (en) | 2012-05-31 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9496408B2 (en) | 2012-05-31 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium |
JP2014007398A (ja) * | 2012-06-01 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US9324882B2 (en) | 2012-06-06 | 2016-04-26 | Kobe Steel, Ltd. | Thin film transistor |
US9343586B2 (en) | 2012-06-06 | 2016-05-17 | Kobe Steel, Ltd. | Thin film transistor |
US9202926B2 (en) | 2012-06-06 | 2015-12-01 | Kobe Steel, Ltd. | Thin film transistor |
US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9847430B2 (en) | 2012-06-15 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9437747B2 (en) | 2012-06-15 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9490369B2 (en) | 2012-06-15 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11424368B2 (en) | 2012-06-15 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10741695B2 (en) | 2012-06-15 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10032926B2 (en) | 2012-06-15 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10483406B2 (en) | 2012-06-15 | 2019-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor |
US10483404B2 (en) | 2012-06-15 | 2019-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9666721B2 (en) | 2012-06-29 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including pellet-like particle or flat-plate-like particle |
US8952381B2 (en) | 2012-06-29 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10424673B2 (en) | 2012-06-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a stack of oxide semiconductor layers |
US10032934B2 (en) | 2012-08-02 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9209256B2 (en) | 2012-08-02 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9761738B2 (en) | 2012-08-02 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having first and second oxide semiconductors with difference energy level |
US9583634B2 (en) | 2012-08-02 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10446668B2 (en) | 2012-08-10 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US10439073B2 (en) | 2012-08-10 | 2019-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9184245B2 (en) | 2012-08-10 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9437749B2 (en) | 2012-08-10 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US9620650B2 (en) | 2012-08-10 | 2017-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9082863B2 (en) | 2012-08-10 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9240492B2 (en) | 2012-08-10 | 2016-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US9502580B2 (en) | 2012-08-10 | 2016-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10566457B2 (en) | 2012-08-31 | 2020-02-18 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Thin film transistor and display device |
US9318507B2 (en) | 2012-08-31 | 2016-04-19 | Kobe Steel, Ltd. | Thin film transistor and display device |
US9368516B2 (en) | 2012-09-13 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
US9252287B2 (en) | 2012-09-13 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd | Display device and electronic appliance |
US9018624B2 (en) | 2012-09-13 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
US8981372B2 (en) | 2012-09-13 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
US9711537B2 (en) | 2012-09-13 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic appliance |
US10211345B2 (en) | 2012-09-24 | 2019-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9269821B2 (en) | 2012-09-24 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11094830B2 (en) | 2012-09-24 | 2021-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20180083140A1 (en) | 2012-09-24 | 2018-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014046220A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014046222A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9831351B2 (en) | 2012-09-24 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9331100B2 (en) | 2012-09-24 | 2016-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10217796B2 (en) | 2012-10-17 | 2019-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide layer and an oxide semiconductor layer |
US9401714B2 (en) | 2012-10-17 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
US9660098B2 (en) | 2012-10-17 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9324875B2 (en) | 2012-10-17 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9166021B2 (en) | 2012-10-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9660093B2 (en) | 2012-10-17 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with multilayer film including oxide semiconductor layer and oxide layer |
JP2014099845A (ja) * | 2012-10-17 | 2014-05-29 | Semiconductor Energy Lab Co Ltd | プログラマブルロジックデバイス |
US9595435B2 (en) | 2012-10-19 | 2017-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device |
US9865743B2 (en) | 2012-10-24 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide layer surrounding oxide semiconductor layer |
US9972718B2 (en) | 2012-10-24 | 2018-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2017103495A (ja) * | 2012-10-24 | 2017-06-08 | 株式会社半導体エネルギー研究所 | トランジスタ及びその作製方法 |
US9324810B2 (en) | 2012-11-30 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor film |
US9583601B2 (en) | 2012-11-30 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10121903B2 (en) | 2012-11-30 | 2018-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9865746B2 (en) | 2012-11-30 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9246011B2 (en) | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293540B2 (en) | 2012-12-03 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9570625B2 (en) | 2012-12-03 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10374030B2 (en) | 2012-12-28 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide semiconductor device |
US9064966B2 (en) | 2012-12-28 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor |
US9748328B2 (en) | 2012-12-28 | 2017-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film |
US9293541B2 (en) | 2012-12-28 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9412877B2 (en) | 2013-02-12 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293544B2 (en) | 2013-02-26 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having buried channel structure |
US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9768320B2 (en) | 2013-02-27 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10014414B2 (en) | 2013-02-28 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9276125B2 (en) | 2013-03-01 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9829533B2 (en) | 2013-03-06 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film and semiconductor device |
US9627545B2 (en) | 2013-04-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11843004B2 (en) | 2013-04-12 | 2023-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having specified relative material concentration between In—Ga—Zn—O films |
US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
US11063066B2 (en) | 2013-04-12 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | C-axis alignment of an oxide film over an oxide semiconductor film |
US9837551B2 (en) | 2013-05-02 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9905695B2 (en) | 2013-05-09 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Multi-layered oxide semiconductor transistor |
US9337344B2 (en) | 2013-05-09 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9837552B2 (en) | 2013-05-20 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9281408B2 (en) | 2013-05-20 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9431547B2 (en) | 2013-05-20 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11949021B2 (en) | 2013-05-20 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10411136B2 (en) | 2013-05-20 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10720532B2 (en) | 2013-05-20 | 2020-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11217704B2 (en) | 2013-05-20 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11646380B2 (en) | 2013-05-20 | 2023-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10128384B2 (en) | 2013-05-20 | 2018-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812585B2 (en) | 2013-10-04 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9293592B2 (en) | 2013-10-11 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9997637B2 (en) | 2014-02-07 | 2018-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10249768B2 (en) | 2014-02-07 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9412876B2 (en) | 2014-02-07 | 2016-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9837512B2 (en) | 2014-07-15 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
US10164075B2 (en) | 2014-07-15 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including transistor |
US9496412B2 (en) | 2014-07-15 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
KR101614913B1 (ko) * | 2014-07-25 | 2016-04-25 | 한국철도기술연구원 | 태양전지 |
US10367095B2 (en) | 2015-03-03 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
KR101706090B1 (ko) * | 2016-08-16 | 2017-02-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
KR20160102363A (ko) * | 2016-08-16 | 2016-08-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 액정 표시 장치 |
JP2017108161A (ja) * | 2017-02-20 | 2017-06-15 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
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CN101621076A (zh) | 2010-01-06 |
US8541258B2 (en) | 2013-09-24 |
US7994500B2 (en) | 2011-08-09 |
US20090321732A1 (en) | 2009-12-31 |
KR20100002503A (ko) | 2010-01-07 |
CN101621076B (zh) | 2012-05-09 |
KR100963026B1 (ko) | 2010-06-10 |
EP2141744A1 (en) | 2010-01-06 |
US20110193083A1 (en) | 2011-08-11 |
US20130240879A1 (en) | 2013-09-19 |
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US8659016B2 (en) | 2014-02-25 |
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