JP2012009845A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012009845A JP2012009845A JP2011113043A JP2011113043A JP2012009845A JP 2012009845 A JP2012009845 A JP 2012009845A JP 2011113043 A JP2011113043 A JP 2011113043A JP 2011113043 A JP2011113043 A JP 2011113043A JP 2012009845 A JP2012009845 A JP 2012009845A
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- layer
- insulating layer
- oxide semiconductor
- oxide
- electrode layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 183
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
【解決手段】酸化物半導体層と接する絶縁層に水素濃度が6×1020atoms/cm3未満である絶縁層を用いる。さらに、水素濃度が6×1020atoms/cm3未満であるゲート絶縁層を用いてもよい。このようにすることで、酸化物半導体層に水素が拡散することを抑制することができ、良好な電気特性を有する半導体装置を提供することができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様である半導体装置について図1を用いて説明する。
本実施の形態では、実施の形態1で示した半導体装置の作製方法について図2を用いて説明する。
本実施の形態では、本発明の別の一態様である半導体装置について図3を用いて説明する。
得られる酸化シリコン層の水素濃度を低減させるため、好ましくは、SiO2ターゲットとし、より好ましくは、SiO2ターゲットに含まれる水酸基濃度が1000ppm以下、またはSIMSで測定した水素濃度が3.5×1019atoms/cm3以下であるSiO2ターゲットとすることである。さらに、形成する際に供給するガスはアルゴン等の希ガスおよび、酸素とする。そして、該形成する際に供給するガスは、水素、水、水酸基または水素化物などの不純物濃度がppm程度、またはppb程度まで除去された高純度ガスを用いることが好ましい。
本実施の形態では、実施の形態3に記載した半導体装置の作製方法について図4を用いて説明する。
上記実施の形態で説明したトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを用いた駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。また、上記実施の形態で記載した酸化物半導体を用いたトランジスタで、メモリセルを含んだ半導体装置を作製することもできる。
上記実施の形態で説明したトランジスタを用いた表示装置は、電子インクを駆動させて表示する電子ペーパーに適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、デジタルサイネージ、PID(Public Information Display)、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図5に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラやデジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などがある。
102 基板
104 絶縁層
106a ソース電極層
106b ドレイン電極層
107 酸化物半導体層
108 酸化物半導体層
110 ゲート絶縁層
112 ゲート電極層
200 トランジスタ
206a ソース電極層
206b ドレイン電極層
207 酸化物半導体層
208 酸化物半導体層
210 ゲート絶縁層
212 ゲート電極層
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2706 光電変換装置
2707 表示部
2708 光電変換装置
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続ポート
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
Claims (7)
- ゲート電極層と、
酸化物半導体層と、
前記酸化物半導体層と接するソース電極層およびドレイン電極層と、
前記ゲート電極層と前記酸化物半導体層の間に設けられるゲート絶縁層と、
前記酸化物半導体層を介して、前記ゲート絶縁層と対向し、且つ前記酸化物半導体層に接する水素濃度が6×1020atoms/cm3未満である絶縁層と、を有することを特徴とする半導体装置。 - 請求項1において、
前記絶縁層および前記ゲート絶縁層は、酸化物絶縁層であることを特徴とする半導体装置。 - 請求項2において、
前記酸化物絶縁層は、酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、酸化ハフニウム、酸化アルミニウム、または酸化タンタルであることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記ゲート電極層は、前記ゲート絶縁層を介して前記酸化物半導体層に重畳し、且つ前記ソース電極層と前記ドレイン電極層との間に設けられることを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記ソース電極層および前記ドレイン電極層は、前記酸化物半導体層と前記ゲート絶縁層との間に有することを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記ソース電極層および前記ドレイン電極層は、前記酸化物半導体層と前記絶縁層との間に有することを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記ゲート絶縁層における水素濃度が6×1020atoms/cm3未満であることを特徴とする半導体装置。
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JP2017228806A (ja) | 2017-12-28 |
US9842939B2 (en) | 2017-12-12 |
TWI535026B (zh) | 2016-05-21 |
WO2011145484A1 (en) | 2011-11-24 |
US9443988B2 (en) | 2016-09-13 |
US20160380106A1 (en) | 2016-12-29 |
TW201210024A (en) | 2012-03-01 |
TW201721874A (zh) | 2017-06-16 |
TWI612675B (zh) | 2018-01-21 |
US8853684B2 (en) | 2014-10-07 |
JP2016034046A (ja) | 2016-03-10 |
JP6469797B2 (ja) | 2019-02-13 |
TW201622153A (zh) | 2016-06-16 |
TWI508292B (zh) | 2015-11-11 |
US20150053975A1 (en) | 2015-02-26 |
US20110284854A1 (en) | 2011-11-24 |
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TWI603474B (zh) | 2017-10-21 |
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Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20151210 |