JPWO2015198604A1 - 薄膜トランジスタ及び有機el表示装置 - Google Patents
薄膜トランジスタ及び有機el表示装置 Download PDFInfo
- Publication number
- JPWO2015198604A1 JPWO2015198604A1 JP2016529085A JP2016529085A JPWO2015198604A1 JP WO2015198604 A1 JPWO2015198604 A1 JP WO2015198604A1 JP 2016529085 A JP2016529085 A JP 2016529085A JP 2016529085 A JP2016529085 A JP 2016529085A JP WO2015198604 A1 JPWO2015198604 A1 JP WO2015198604A1
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- layer
- fluorine
- semiconductor layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 322
- 239000011737 fluorine Substances 0.000 claims abstract description 172
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 172
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 168
- 239000010408 film Substances 0.000 claims description 114
- 239000001257 hydrogen Substances 0.000 claims description 51
- 229910052739 hydrogen Inorganic materials 0.000 claims description 51
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000011701 zinc Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 450
- 238000005401 electroluminescence Methods 0.000 description 48
- 238000000034 method Methods 0.000 description 31
- 230000004048 modification Effects 0.000 description 22
- 238000012986 modification Methods 0.000 description 22
- 239000011229 interlayer Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000011521 glass Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000003795 desorption Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 206010021143 Hypoxia Diseases 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/385—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
以下、本発明の一実施の形態について、図面を用いて説明する。なお、以下に説明する実施の形態は、いずれも本発明の好ましい一具体例を示すものである。したがって、以下の実施の形態で示される、数値、形状、材料、構成要素、構成要素の配置位置及び接続形態、工程(ステップ)、工程の順序等は、一例であって本発明を限定する主旨ではない。よって、以下の実施の形態における構成要素のうち、本発明の最上位概念を示す独立請求項に記載されていない構成要素については、任意の構成要素として説明される。
まず、本発明の実施の形態に係る薄膜トランジスタ1について、図1を用いて説明する。図1は、本発明の実施の形態に係る薄膜トランジスタの構成を示す断面図である。
次に、本実施の形態に係る薄膜トランジスタ1の製造方法について、図2A〜図2Iを用いて説明する。図2A〜図2Iは、本発明の実施の形態に係る薄膜トランジスタの製造方法における各工程の断面図である。
次に、本実施の形態に係る薄膜トランジスタ1の作用効果について、本発明に至った経緯も含めて説明する。
次に、上記の実施の形態に係る薄膜トランジスタ1を表示装置に適用した例について、図9及び図10を用いて説明する。なお、本実施の形態では、有機EL表示装置への適用例について説明する。
次に、本発明の変形例に係る薄膜トランジスタ2とその製造方法について、図11、図12A〜図12Cを用いて説明する。図11は、変形例に係る薄膜トランジスタの構成を示す断面図である。図12A〜図12Cは、変形例に係る薄膜トランジスタの製造方法における主要工程の断面図である。
以上、薄膜トランジスタ及びその製造方法について、実施の形態及び変形例に基づいて説明したが、本発明は、上記実施の形態及び変形例に限定されるものではない。
10 基板
20 アンダーコート層
30、40S、40D 酸化物半導体層
31 第1領域
32 第2領域
50 ゲート絶縁層
60、G1、G2 ゲート電極
70 層間絶縁層
80S、S1、S2 ソース電極
80D、D1、D2 ドレイン電極
90 剥離層
91 ガラス基板
100 有機EL表示装置
110 TFT基板
120 画素
130 有機EL素子
131 陽極
132 EL層
133 陰極
140 ゲート配線
150 ソース配線
160 電源配線
SC1 第1の酸化物半導体膜
SC2 第2の酸化物半導体膜
SwTr スイッチングトランジスタ
DrTr 駆動トランジスタ
C キャパシタ
Claims (11)
- 基板と、
前記基板に配置された無機層と、
前記無機層の上方に形成され、少なくともインジウムを含む酸化物半導体層と、
前記酸化物半導体層を間に介して前記無機層と対向する絶縁層と、
前記絶縁層を間に介して前記酸化物半導体層と対向するゲート電極と、
前記酸化物半導体層と電気的に接続するソース電極及びドレイン電極と、を有し、
前記酸化物半導体層の内部領域であって前記無機層と近接する領域にはフッ素が含有されている
薄膜トランジスタ。 - 前記無機層は、酸化シリコン又は酸窒化シリコンからなるアンダーコート層であって、前記基板の上面に形成されている
請求項1に記載の薄膜トランジスタ。 - 前記無機層は、複数の絶縁膜を積層することで構成される
請求項2に記載の薄膜トランジスタ。 - 前記無機層は、非晶質シリコンを主成分とする層であって、前記基板の下面に形成されている
請求項1に記載の薄膜トランジスタ。 - 前記酸化物半導体層における前記無機層と近接する領域のフッ素含有濃度は、前記酸化物半導体層における前記絶縁層と近接する領域のフッ素含有濃度より高い
請求項1〜4のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層における前記フッ素が含有されている領域であるフッ素含有領域は、厚み方向にフッ素濃度勾配を有する
請求項1〜5のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層におけるフッ素が含有されている領域の膜厚は、15nm以上である
請求項1〜6のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層におけるフッ素が含有されている領域の膜厚は、20nm以上である
請求項1〜6のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層のフッ素含有濃度は、前記酸化物半導体層の水素含有濃度より高い
請求項1〜8のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層を構成する金属元素には、さらに、ガリウム及び亜鉛の少なくとも一方及び両方が含まれている
請求項1〜9のいずれか1項に記載の薄膜トランジスタ。 - 請求項1〜10のいずれか1項に記載の薄膜トランジスタを備える有機EL表示装置であって、
マトリクス状に配置された複数の画素と、
前記複数の画素の各々に対応して形成された有機EL素子とを備え、
前記薄膜トランジスタは、前記有機EL素子を駆動する駆動トランジスタである
有機EL表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014131602 | 2014-06-26 | ||
JP2014131602 | 2014-06-26 | ||
PCT/JP2015/003185 WO2015198604A1 (ja) | 2014-06-26 | 2015-06-24 | 薄膜トランジスタ及び有機el表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015198604A1 true JPWO2015198604A1 (ja) | 2017-04-20 |
JP6311901B2 JP6311901B2 (ja) | 2018-04-18 |
Family
ID=54937711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016529085A Active JP6311901B2 (ja) | 2014-06-26 | 2015-06-24 | 薄膜トランジスタ及び有機el表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10008611B2 (ja) |
JP (1) | JP6311901B2 (ja) |
WO (1) | WO2015198604A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015194175A1 (ja) * | 2014-06-20 | 2015-12-23 | 株式会社Joled | 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機el表示装置 |
JP6425508B2 (ja) * | 2014-11-25 | 2018-11-21 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ |
US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR102454384B1 (ko) * | 2015-12-31 | 2022-10-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터와 그를 포함하는 표시 장치 및 그 제조방법 |
US10134878B2 (en) * | 2016-01-14 | 2018-11-20 | Applied Materials, Inc. | Oxygen vacancy of IGZO passivation by fluorine treatment |
DE112017002579T5 (de) | 2016-05-20 | 2019-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung oder diese enthaltende Anzeigevorrichtung |
JP6957134B2 (ja) * | 2016-07-21 | 2021-11-02 | 株式会社半導体エネルギー研究所 | 酸化物半導体の評価方法 |
CN106920754A (zh) * | 2017-02-17 | 2017-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
CN106935657B (zh) * | 2017-05-04 | 2020-06-02 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、显示装置 |
CN109559984B (zh) * | 2017-08-21 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置的制造方法 |
WO2019107046A1 (ja) * | 2017-11-28 | 2019-06-06 | Agc株式会社 | 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット |
JP7063712B2 (ja) | 2018-05-09 | 2022-05-09 | 株式会社神戸製鋼所 | 酸化物半導体層を含む薄膜トランジスタ |
US10950436B2 (en) | 2018-12-05 | 2021-03-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate manufacturing using fluorine and hydrogenation processes |
CN109860235B (zh) * | 2018-12-05 | 2021-05-28 | 武汉华星光电半导体显示技术有限公司 | 阵列基板的制备方法、阵列基板、显示面板和显示装置 |
CN109860107B (zh) * | 2019-01-31 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制作方法 |
US11374038B2 (en) | 2019-01-31 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate having protection region on same layer as gate insulating layer and manufacturing method thereof |
US20230378372A1 (en) * | 2022-05-19 | 2023-11-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method of manufacturing semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008211191A (ja) * | 2007-02-02 | 2008-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011205078A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011205081A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2012009845A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20120168757A1 (en) * | 2010-12-29 | 2012-07-05 | Samsung Electronics Co., Ltd. | Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100481994B1 (ko) | 1996-08-27 | 2005-12-01 | 세이코 엡슨 가부시키가이샤 | 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치 |
JP4619644B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
US7579771B2 (en) * | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7109655B2 (en) * | 2002-12-26 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP5388500B2 (ja) * | 2007-08-30 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5616012B2 (ja) * | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2010161227A (ja) | 2009-01-08 | 2010-07-22 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2010251591A (ja) | 2009-04-17 | 2010-11-04 | Konica Minolta Holdings Inc | 薄膜トランジスタおよび該薄膜トランジスタの製造方法 |
JP5679143B2 (ja) | 2009-12-01 | 2015-03-04 | ソニー株式会社 | 薄膜トランジスタならびに表示装置および電子機器 |
US8441010B2 (en) | 2010-07-01 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2015
- 2015-06-24 JP JP2016529085A patent/JP6311901B2/ja active Active
- 2015-06-24 WO PCT/JP2015/003185 patent/WO2015198604A1/ja active Application Filing
- 2015-06-24 US US15/321,975 patent/US10008611B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008211191A (ja) * | 2007-02-02 | 2008-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011205078A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011205081A (ja) * | 2010-03-05 | 2011-10-13 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2012009845A (ja) * | 2010-05-21 | 2012-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20120168757A1 (en) * | 2010-12-29 | 2012-07-05 | Samsung Electronics Co., Ltd. | Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors |
Also Published As
Publication number | Publication date |
---|---|
WO2015198604A1 (ja) | 2015-12-30 |
JP6311901B2 (ja) | 2018-04-18 |
US10008611B2 (en) | 2018-06-26 |
US20170141231A1 (en) | 2017-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6311901B2 (ja) | 薄膜トランジスタ及び有機el表示装置 | |
US10665614B2 (en) | Display panel and method for manufacturing thin film transistor substrate | |
JP6358596B2 (ja) | 薄膜トランジスタ基板の製造方法 | |
US10535779B2 (en) | Thin film transistor and method for manufacturing thin film transistor | |
US10050150B2 (en) | Thin-film transistor, method of fabricating thin-film transistor, and display device | |
US10276722B2 (en) | Thin film transistor | |
JP6331052B2 (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機el表示装置 | |
JPWO2015029286A1 (ja) | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 | |
JP2012033836A (ja) | トップゲート型薄膜トランジスタ及びこれを備えた表示装置 | |
JP2015149467A (ja) | 薄膜トランジスタ基板の製造方法 | |
JP6142300B2 (ja) | 薄膜トランジスタの製造方法 | |
JP6263721B2 (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機el表示装置 | |
JP2016111104A (ja) | 薄膜半導体基板の製造方法 | |
WO2013187046A1 (ja) | 薄膜トランジスタ | |
KR102212457B1 (ko) | 유기발광표시장치 및 그의 제조방법 | |
JP6500202B2 (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
WO2016038823A1 (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
JP6500203B2 (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
WO2016067585A1 (ja) | 薄膜半導体装置、有機el表示装置及び薄膜半導体装置の製造方法 | |
JP2016111092A (ja) | 薄膜トランジスタ | |
JP2016111151A (ja) | 薄膜トランジスタ基板の製造方法 | |
JP2015185610A (ja) | 薄膜トランジスタ及び薄膜トランジスタの製造方法 | |
JP2016076599A (ja) | 薄膜トランジスタ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180110 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180306 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6311901 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S303 | Written request for registration of pledge or change of pledge |
Free format text: JAPANESE INTERMEDIATE CODE: R316303 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S803 | Written request for registration of cancellation of provisional registration |
Free format text: JAPANESE INTERMEDIATE CODE: R316803 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |