JP6311901B2 - 薄膜トランジスタ及び有機el表示装置 - Google Patents
薄膜トランジスタ及び有機el表示装置 Download PDFInfo
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- JP6311901B2 JP6311901B2 JP2016529085A JP2016529085A JP6311901B2 JP 6311901 B2 JP6311901 B2 JP 6311901B2 JP 2016529085 A JP2016529085 A JP 2016529085A JP 2016529085 A JP2016529085 A JP 2016529085A JP 6311901 B2 JP6311901 B2 JP 6311901B2
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- oxide semiconductor
- layer
- fluorine
- semiconductor layer
- thin film
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Description
以下、本発明の一実施の形態について、図面を用いて説明する。なお、以下に説明する実施の形態は、いずれも本発明の好ましい一具体例を示すものである。したがって、以下の実施の形態で示される、数値、形状、材料、構成要素、構成要素の配置位置及び接続形態、工程(ステップ)、工程の順序等は、一例であって本発明を限定する主旨ではない。よって、以下の実施の形態における構成要素のうち、本発明の最上位概念を示す独立請求項に記載されていない構成要素については、任意の構成要素として説明される。
まず、本発明の実施の形態に係る薄膜トランジスタ1について、図1を用いて説明する。図1は、本発明の実施の形態に係る薄膜トランジスタの構成を示す断面図である。
次に、本実施の形態に係る薄膜トランジスタ1の製造方法について、図2A〜図2Iを用いて説明する。図2A〜図2Iは、本発明の実施の形態に係る薄膜トランジスタの製造方法における各工程の断面図である。
次に、本実施の形態に係る薄膜トランジスタ1の作用効果について、本発明に至った経緯も含めて説明する。
次に、上記の実施の形態に係る薄膜トランジスタ1を表示装置に適用した例について、図9及び図10を用いて説明する。なお、本実施の形態では、有機EL表示装置への適用例について説明する。
次に、本発明の変形例に係る薄膜トランジスタ2とその製造方法について、図11、図12A〜図12Cを用いて説明する。図11は、変形例に係る薄膜トランジスタの構成を示す断面図である。図12A〜図12Cは、変形例に係る薄膜トランジスタの製造方法における主要工程の断面図である。
以上、薄膜トランジスタ及びその製造方法について、実施の形態及び変形例に基づいて説明したが、本発明は、上記実施の形態及び変形例に限定されるものではない。
10 基板
20 アンダーコート層
30、40S、40D 酸化物半導体層
31 第1領域
32 第2領域
50 ゲート絶縁層
60、G1、G2 ゲート電極
70 層間絶縁層
80S、S1、S2 ソース電極
80D、D1、D2 ドレイン電極
90 剥離層
91 ガラス基板
100 有機EL表示装置
110 TFT基板
120 画素
130 有機EL素子
131 陽極
132 EL層
133 陰極
140 ゲート配線
150 ソース配線
160 電源配線
SC1 第1の酸化物半導体膜
SC2 第2の酸化物半導体膜
SwTr スイッチングトランジスタ
DrTr 駆動トランジスタ
C キャパシタ
Claims (10)
- 基板と、
前記基板に配置された無機層と、
前記無機層の上方に形成され、少なくともインジウムを含む酸化物半導体層と、
前記酸化物半導体層を間に介して前記無機層と対向する絶縁層と、
前記絶縁層を間に介して前記酸化物半導体層と対向するゲート電極と、
前記酸化物半導体層と電気的に接続するソース電極及びドレイン電極と、を有し、
前記酸化物半導体層の内部領域であって前記無機層と近接する領域にはフッ素が含有されており、
前記酸化物半導体層における前記無機層と近接する領域のフッ素含有濃度は、前記酸化物半導体層における前記絶縁層と近接する領域のフッ素含有濃度より高い
薄膜トランジスタ。 - 基板と、
前記基板に配置された無機層と、
前記無機層の上方に形成され、少なくともインジウムを含む酸化物半導体層と、
前記酸化物半導体層を間に介して前記無機層と対向する絶縁層と、
前記絶縁層を間に介して前記酸化物半導体層と対向するゲート電極と、
前記酸化物半導体層と電気的に接続するソース電極及びドレイン電極と、を有し、
前記酸化物半導体層の内部領域であって前記無機層と近接する領域にはフッ素が含有されており、
前記酸化物半導体層における前記フッ素が含有されている領域であるフッ素含有領域は、厚み方向にフッ素濃度勾配を有する
薄膜トランジスタ。 - 前記無機層は、酸化シリコン又は酸窒化シリコンからなるアンダーコート層であって、前記基板の上面に形成されている
請求項1又は2に記載の薄膜トランジスタ。 - 前記無機層は、複数の絶縁膜を積層することで構成される
請求項3に記載の薄膜トランジスタ。 - 前記無機層は、非晶質シリコンを主成分とする層であって、前記基板の下面に形成されている
請求項1又は2に記載の薄膜トランジスタ。 - 前記酸化物半導体層におけるフッ素が含有されている領域の膜厚は、15nm以上である
請求項1〜5のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層におけるフッ素が含有されている領域の膜厚は、20nm以上である
請求項1〜5のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層のフッ素含有濃度は、前記酸化物半導体層の水素含有濃度より高い
請求項1〜7のいずれか1項に記載の薄膜トランジスタ。 - 前記酸化物半導体層を構成する金属元素には、さらに、ガリウム及び亜鉛の少なくとも一方及び両方が含まれている
請求項1〜8のいずれか1項に記載の薄膜トランジスタ。 - 請求項1〜9のいずれか1項に記載の薄膜トランジスタを備える有機EL表示装置であって、
マトリクス状に配置された複数の画素と、
前記複数の画素の各々に対応して形成された有機EL素子とを備え、
前記薄膜トランジスタは、前記有機EL素子を駆動する駆動トランジスタである
有機EL表示装置。
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US10714633B2 (en) * | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
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US10134878B2 (en) * | 2016-01-14 | 2018-11-20 | Applied Materials, Inc. | Oxygen vacancy of IGZO passivation by fluorine treatment |
CN114864381A (zh) * | 2016-05-20 | 2022-08-05 | 株式会社半导体能源研究所 | 半导体装置或包括该半导体装置的显示装置 |
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CN106920754A (zh) * | 2017-02-17 | 2017-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
CN106935657B (zh) * | 2017-05-04 | 2020-06-02 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、显示装置 |
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WO2019107046A1 (ja) * | 2017-11-28 | 2019-06-06 | Agc株式会社 | 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット |
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US10950436B2 (en) | 2018-12-05 | 2021-03-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate manufacturing using fluorine and hydrogenation processes |
US11374038B2 (en) | 2019-01-31 | 2022-06-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate having protection region on same layer as gate insulating layer and manufacturing method thereof |
CN109860107B (zh) * | 2019-01-31 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制作方法 |
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JP4619644B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
US7579771B2 (en) * | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
US7109655B2 (en) * | 2002-12-26 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP5388500B2 (ja) * | 2007-08-30 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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