JP2009513014A5 - - Google Patents

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Publication number
JP2009513014A5
JP2009513014A5 JP2008536553A JP2008536553A JP2009513014A5 JP 2009513014 A5 JP2009513014 A5 JP 2009513014A5 JP 2008536553 A JP2008536553 A JP 2008536553A JP 2008536553 A JP2008536553 A JP 2008536553A JP 2009513014 A5 JP2009513014 A5 JP 2009513014A5
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JP
Japan
Prior art keywords
layer
seed
forming
epitaxial layers
conductive
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JP2008536553A
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English (en)
Japanese (ja)
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JP2009513014A (ja
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Priority claimed from SG200506897-8A external-priority patent/SG131803A1/en
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Publication of JP2009513014A publication Critical patent/JP2009513014A/ja
Publication of JP2009513014A5 publication Critical patent/JP2009513014A5/ja
Withdrawn legal-status Critical Current

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JP2008536553A 2005-10-19 2006-09-01 トランジスタの製造 Withdrawn JP2009513014A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG200506897-8A SG131803A1 (en) 2005-10-19 2005-10-19 Fabrication of transistors
PCT/SG2006/000255 WO2007046773A1 (en) 2005-10-19 2006-09-01 Fabrication of transistors

Publications (2)

Publication Number Publication Date
JP2009513014A JP2009513014A (ja) 2009-03-26
JP2009513014A5 true JP2009513014A5 (enExample) 2009-10-15

Family

ID=37962779

Family Applications (1)

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JP2008536553A Withdrawn JP2009513014A (ja) 2005-10-19 2006-09-01 トランジスタの製造

Country Status (7)

Country Link
US (1) US8067269B2 (enExample)
EP (1) EP1949442A4 (enExample)
JP (1) JP2009513014A (enExample)
KR (1) KR20080074892A (enExample)
CN (1) CN101351887B (enExample)
SG (1) SG131803A1 (enExample)
WO (1) WO2007046773A1 (enExample)

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