JP2013004636A5 - - Google Patents

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Publication number
JP2013004636A5
JP2013004636A5 JP2011132784A JP2011132784A JP2013004636A5 JP 2013004636 A5 JP2013004636 A5 JP 2013004636A5 JP 2011132784 A JP2011132784 A JP 2011132784A JP 2011132784 A JP2011132784 A JP 2011132784A JP 2013004636 A5 JP2013004636 A5 JP 2013004636A5
Authority
JP
Japan
Prior art keywords
silicon carbide
insulating film
gate electrode
gate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011132784A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013004636A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011132784A priority Critical patent/JP2013004636A/ja
Priority claimed from JP2011132784A external-priority patent/JP2013004636A/ja
Priority to EP12800187.2A priority patent/EP2722892A4/en
Priority to CN201280023455.4A priority patent/CN103548144A/zh
Priority to KR1020137027717A priority patent/KR20140021609A/ko
Priority to PCT/JP2012/063722 priority patent/WO2012172965A1/ja
Priority to TW101120545A priority patent/TW201308621A/zh
Priority to US13/523,600 priority patent/US20120319134A1/en
Publication of JP2013004636A publication Critical patent/JP2013004636A/ja
Publication of JP2013004636A5 publication Critical patent/JP2013004636A5/ja
Pending legal-status Critical Current

Links

JP2011132784A 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法 Pending JP2013004636A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法
EP12800187.2A EP2722892A4 (en) 2011-06-15 2012-05-29 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
CN201280023455.4A CN103548144A (zh) 2011-06-15 2012-05-29 碳化硅半导体器件及其制造方法
KR1020137027717A KR20140021609A (ko) 2011-06-15 2012-05-29 탄화규소 반도체 장치 및 그 제조 방법
PCT/JP2012/063722 WO2012172965A1 (ja) 2011-06-15 2012-05-29 炭化珪素半導体装置およびその製造方法
TW101120545A TW201308621A (zh) 2011-06-15 2012-06-07 碳化矽半導體裝置及其製造方法
US13/523,600 US20120319134A1 (en) 2011-06-15 2012-06-14 Silicon carbide semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2013004636A JP2013004636A (ja) 2013-01-07
JP2013004636A5 true JP2013004636A5 (enExample) 2014-07-24

Family

ID=47352981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011132784A Pending JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法

Country Status (7)

Country Link
US (1) US20120319134A1 (enExample)
EP (1) EP2722892A4 (enExample)
JP (1) JP2013004636A (enExample)
KR (1) KR20140021609A (enExample)
CN (1) CN103548144A (enExample)
TW (1) TW201308621A (enExample)
WO (1) WO2012172965A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015015352A (ja) 2013-07-04 2015-01-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6098417B2 (ja) * 2013-07-26 2017-03-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015156429A (ja) * 2014-02-20 2015-08-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6295797B2 (ja) * 2014-04-10 2018-03-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2015178024A1 (ja) * 2014-05-23 2015-11-26 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018074088A (ja) * 2016-11-02 2018-05-10 富士電機株式会社 半導体装置
JP6939278B2 (ja) * 2017-09-01 2021-09-22 株式会社デンソー スイッチング装置
DE102019109368B4 (de) * 2018-05-15 2024-07-04 Infineon Technologies Ag Halbleitervorrichtung mit siliziumcarbidkörper und herstellungsverfahren
JP7180425B2 (ja) * 2019-02-06 2022-11-30 住友電気工業株式会社 炭化珪素半導体装置
US20210343847A1 (en) * 2020-04-30 2021-11-04 Cree, Inc. Diffusion and/or enhancement layers for electrical contact regions
IT202100003653A1 (it) * 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20230335595A1 (en) * 2022-04-13 2023-10-19 Leap Semiconductor Corp. Silicon carbide semiconductor power transistor and method of manufacturing the same
JP2025038403A (ja) * 2023-09-07 2025-03-19 株式会社東芝 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273326A (ja) * 1994-03-31 1995-10-20 Toshiba Corp 半導体装置とその製造方法
US5736753A (en) * 1994-09-12 1998-04-07 Hitachi, Ltd. Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
JPH11251592A (ja) * 1998-01-05 1999-09-17 Denso Corp 炭化珪素半導体装置
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
JP2001284587A (ja) * 2000-03-28 2001-10-12 Kaga Toshiba Electron Kk 半導体装置およびその製造方法
JP4917246B2 (ja) * 2003-11-17 2012-04-18 ローム株式会社 半導体装置およびその製造方法
JP4830285B2 (ja) * 2004-11-08 2011-12-07 株式会社デンソー 炭化珪素半導体装置の製造方法
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
JP5017823B2 (ja) * 2005-09-12 2012-09-05 富士電機株式会社 半導体素子の製造方法
JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
EP2325891A4 (en) * 2008-09-12 2014-08-06 Sumitomo Electric Industries SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SILICON CARBIDE SEMICONDUCTOR DEVICE
JP5588670B2 (ja) 2008-12-25 2014-09-10 ローム株式会社 半導体装置
KR101230680B1 (ko) * 2009-04-30 2013-02-07 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
JP5721351B2 (ja) * 2009-07-21 2015-05-20 ローム株式会社 半導体装置

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