TW201308621A - 碳化矽半導體裝置及其製造方法 - Google Patents

碳化矽半導體裝置及其製造方法 Download PDF

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Publication number
TW201308621A
TW201308621A TW101120545A TW101120545A TW201308621A TW 201308621 A TW201308621 A TW 201308621A TW 101120545 A TW101120545 A TW 101120545A TW 101120545 A TW101120545 A TW 101120545A TW 201308621 A TW201308621 A TW 201308621A
Authority
TW
Taiwan
Prior art keywords
tantalum carbide
insulating film
film
gate
semiconductor device
Prior art date
Application number
TW101120545A
Other languages
English (en)
Chinese (zh)
Inventor
Misako Honaga
Takeyoshi Masuda
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW201308621A publication Critical patent/TW201308621A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer

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  • Electrodes Of Semiconductors (AREA)
TW101120545A 2011-06-15 2012-06-07 碳化矽半導體裝置及其製造方法 TW201308621A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW201308621A true TW201308621A (zh) 2013-02-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101120545A TW201308621A (zh) 2011-06-15 2012-06-07 碳化矽半導體裝置及其製造方法

Country Status (7)

Country Link
US (1) US20120319134A1 (enExample)
EP (1) EP2722892A4 (enExample)
JP (1) JP2013004636A (enExample)
KR (1) KR20140021609A (enExample)
CN (1) CN103548144A (enExample)
TW (1) TW201308621A (enExample)
WO (1) WO2012172965A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI801278B (zh) * 2022-04-13 2023-05-01 力拓半導體股份有限公司 碳化矽半導體功率電晶體及其製造方法

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JP2015015352A (ja) 2013-07-04 2015-01-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6098417B2 (ja) * 2013-07-26 2017-03-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015156429A (ja) * 2014-02-20 2015-08-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6295797B2 (ja) * 2014-04-10 2018-03-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2015178024A1 (ja) * 2014-05-23 2015-11-26 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018074088A (ja) * 2016-11-02 2018-05-10 富士電機株式会社 半導体装置
JP6939278B2 (ja) * 2017-09-01 2021-09-22 株式会社デンソー スイッチング装置
DE102019109368B4 (de) * 2018-05-15 2024-07-04 Infineon Technologies Ag Halbleitervorrichtung mit siliziumcarbidkörper und herstellungsverfahren
JP7180425B2 (ja) * 2019-02-06 2022-11-30 住友電気工業株式会社 炭化珪素半導体装置
US20210343847A1 (en) * 2020-04-30 2021-11-04 Cree, Inc. Diffusion and/or enhancement layers for electrical contact regions
IT202100003653A1 (it) * 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
JP2025038403A (ja) * 2023-09-07 2025-03-19 株式会社東芝 半導体装置

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JPH07273326A (ja) * 1994-03-31 1995-10-20 Toshiba Corp 半導体装置とその製造方法
US5736753A (en) * 1994-09-12 1998-04-07 Hitachi, Ltd. Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
JPH11251592A (ja) * 1998-01-05 1999-09-17 Denso Corp 炭化珪素半導体装置
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
JP2001284587A (ja) * 2000-03-28 2001-10-12 Kaga Toshiba Electron Kk 半導体装置およびその製造方法
JP4917246B2 (ja) * 2003-11-17 2012-04-18 ローム株式会社 半導体装置およびその製造方法
JP4830285B2 (ja) * 2004-11-08 2011-12-07 株式会社デンソー 炭化珪素半導体装置の製造方法
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
JP5017823B2 (ja) * 2005-09-12 2012-09-05 富士電機株式会社 半導体素子の製造方法
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JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
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KR101230680B1 (ko) * 2009-04-30 2013-02-07 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI801278B (zh) * 2022-04-13 2023-05-01 力拓半導體股份有限公司 碳化矽半導體功率電晶體及其製造方法

Also Published As

Publication number Publication date
CN103548144A (zh) 2014-01-29
KR20140021609A (ko) 2014-02-20
JP2013004636A (ja) 2013-01-07
EP2722892A4 (en) 2015-01-21
US20120319134A1 (en) 2012-12-20
EP2722892A1 (en) 2014-04-23
WO2012172965A1 (ja) 2012-12-20

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