JP2013004636A - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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Publication number
JP2013004636A
JP2013004636A JP2011132784A JP2011132784A JP2013004636A JP 2013004636 A JP2013004636 A JP 2013004636A JP 2011132784 A JP2011132784 A JP 2011132784A JP 2011132784 A JP2011132784 A JP 2011132784A JP 2013004636 A JP2013004636 A JP 2013004636A
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Japan
Prior art keywords
silicon carbide
insulating film
film
gate electrode
gate
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Pending
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JP2011132784A
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English (en)
Japanese (ja)
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JP2013004636A5 (enExample
Inventor
Misako Honaga
美紗子 穂永
Takeyoshi Masuda
健良 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2011132784A priority Critical patent/JP2013004636A/ja
Priority to EP12800187.2A priority patent/EP2722892A4/en
Priority to CN201280023455.4A priority patent/CN103548144A/zh
Priority to KR1020137027717A priority patent/KR20140021609A/ko
Priority to PCT/JP2012/063722 priority patent/WO2012172965A1/ja
Priority to TW101120545A priority patent/TW201308621A/zh
Priority to US13/523,600 priority patent/US20120319134A1/en
Publication of JP2013004636A publication Critical patent/JP2013004636A/ja
Publication of JP2013004636A5 publication Critical patent/JP2013004636A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer

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  • Electrodes Of Semiconductors (AREA)
JP2011132784A 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法 Pending JP2013004636A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法
EP12800187.2A EP2722892A4 (en) 2011-06-15 2012-05-29 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
CN201280023455.4A CN103548144A (zh) 2011-06-15 2012-05-29 碳化硅半导体器件及其制造方法
KR1020137027717A KR20140021609A (ko) 2011-06-15 2012-05-29 탄화규소 반도체 장치 및 그 제조 방법
PCT/JP2012/063722 WO2012172965A1 (ja) 2011-06-15 2012-05-29 炭化珪素半導体装置およびその製造方法
TW101120545A TW201308621A (zh) 2011-06-15 2012-06-07 碳化矽半導體裝置及其製造方法
US13/523,600 US20120319134A1 (en) 2011-06-15 2012-06-14 Silicon carbide semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法

Publications (2)

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JP2013004636A true JP2013004636A (ja) 2013-01-07
JP2013004636A5 JP2013004636A5 (enExample) 2014-07-24

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JP2011132784A Pending JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法

Country Status (7)

Country Link
US (1) US20120319134A1 (enExample)
EP (1) EP2722892A4 (enExample)
JP (1) JP2013004636A (enExample)
KR (1) KR20140021609A (enExample)
CN (1) CN103548144A (enExample)
TW (1) TW201308621A (enExample)
WO (1) WO2012172965A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015001863A1 (ja) * 2013-07-04 2015-01-08 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2015012019A1 (ja) * 2013-07-26 2015-01-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015201604A (ja) * 2014-04-10 2015-11-12 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2019212902A (ja) * 2018-05-15 2019-12-12 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 炭化ケイ素体を有する半導体デバイスおよび製造方法
JP2023524019A (ja) * 2020-04-30 2023-06-08 ウルフスピード インコーポレイテッド 電気接点領域用のバリア層
WO2025052686A1 (ja) * 2023-09-07 2025-03-13 株式会社 東芝 半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015156429A (ja) * 2014-02-20 2015-08-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2015178024A1 (ja) * 2014-05-23 2015-11-26 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP2018074088A (ja) * 2016-11-02 2018-05-10 富士電機株式会社 半導体装置
JP6939278B2 (ja) * 2017-09-01 2021-09-22 株式会社デンソー スイッチング装置
JP7180425B2 (ja) * 2019-02-06 2022-11-30 住友電気工業株式会社 炭化珪素半導体装置
IT202100003653A1 (it) * 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20230335595A1 (en) * 2022-04-13 2023-10-19 Leap Semiconductor Corp. Silicon carbide semiconductor power transistor and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199724A (ja) * 1996-01-23 1997-07-31 Denso Corp 炭化珪素半導体装置
JP2007080971A (ja) * 2005-09-12 2007-03-29 Fuji Electric Holdings Co Ltd 半導体素子およびその製造方法
JP2008135653A (ja) * 2006-11-29 2008-06-12 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
WO2010125661A1 (ja) * 2009-04-30 2010-11-04 三菱電機株式会社 半導体装置及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273326A (ja) * 1994-03-31 1995-10-20 Toshiba Corp 半導体装置とその製造方法
US5736753A (en) * 1994-09-12 1998-04-07 Hitachi, Ltd. Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JPH11251592A (ja) * 1998-01-05 1999-09-17 Denso Corp 炭化珪素半導体装置
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
JP2001284587A (ja) * 2000-03-28 2001-10-12 Kaga Toshiba Electron Kk 半導体装置およびその製造方法
JP4917246B2 (ja) * 2003-11-17 2012-04-18 ローム株式会社 半導体装置およびその製造方法
JP4830285B2 (ja) * 2004-11-08 2011-12-07 株式会社デンソー 炭化珪素半導体装置の製造方法
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
EP2325891A4 (en) * 2008-09-12 2014-08-06 Sumitomo Electric Industries SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SILICON CARBIDE SEMICONDUCTOR DEVICE
JP5588670B2 (ja) 2008-12-25 2014-09-10 ローム株式会社 半導体装置
JP5721351B2 (ja) * 2009-07-21 2015-05-20 ローム株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199724A (ja) * 1996-01-23 1997-07-31 Denso Corp 炭化珪素半導体装置
JP2007080971A (ja) * 2005-09-12 2007-03-29 Fuji Electric Holdings Co Ltd 半導体素子およびその製造方法
JP2008135653A (ja) * 2006-11-29 2008-06-12 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
WO2010125661A1 (ja) * 2009-04-30 2010-11-04 三菱電機株式会社 半導体装置及びその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015015352A (ja) * 2013-07-04 2015-01-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2015001863A1 (ja) * 2013-07-04 2015-01-08 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9704743B2 (en) 2013-07-04 2017-07-11 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device
US9680006B2 (en) 2013-07-26 2017-06-13 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing the same
WO2015012019A1 (ja) * 2013-07-26 2015-01-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015201604A (ja) * 2014-04-10 2015-11-12 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2019212902A (ja) * 2018-05-15 2019-12-12 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 炭化ケイ素体を有する半導体デバイスおよび製造方法
US11881512B2 (en) 2018-05-15 2024-01-23 Infineon Technologies Ag Method of manufacturing semiconductor device with silicon carbide body
JP7493309B2 (ja) 2018-05-15 2024-05-31 インフィネオン テクノロジーズ アーゲー 炭化ケイ素体を有する半導体デバイスおよび製造方法
JP2024107024A (ja) * 2018-05-15 2024-08-08 インフィネオン テクノロジーズ アーゲー 炭化ケイ素体を有する半導体デバイスおよび製造方法
JP7781952B2 (ja) 2018-05-15 2025-12-08 インフィネオン テクノロジーズ アーゲー 炭化ケイ素体を有する半導体デバイスおよび製造方法
JP2023524019A (ja) * 2020-04-30 2023-06-08 ウルフスピード インコーポレイテッド 電気接点領域用のバリア層
JP7636435B2 (ja) 2020-04-30 2025-02-26 ウルフスピード インコーポレイテッド 電気接点領域用のバリア層
WO2025052686A1 (ja) * 2023-09-07 2025-03-13 株式会社 東芝 半導体装置

Also Published As

Publication number Publication date
CN103548144A (zh) 2014-01-29
KR20140021609A (ko) 2014-02-20
EP2722892A4 (en) 2015-01-21
TW201308621A (zh) 2013-02-16
US20120319134A1 (en) 2012-12-20
EP2722892A1 (en) 2014-04-23
WO2012172965A1 (ja) 2012-12-20

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