CN103548144A - 碳化硅半导体器件及其制造方法 - Google Patents

碳化硅半导体器件及其制造方法 Download PDF

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Publication number
CN103548144A
CN103548144A CN201280023455.4A CN201280023455A CN103548144A CN 103548144 A CN103548144 A CN 103548144A CN 201280023455 A CN201280023455 A CN 201280023455A CN 103548144 A CN103548144 A CN 103548144A
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CN
China
Prior art keywords
silicon carbide
gate electrode
film
carbide substrates
insulating film
Prior art date
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Pending
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CN201280023455.4A
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English (en)
Chinese (zh)
Inventor
穗永美纱子
增田健良
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN103548144A publication Critical patent/CN103548144A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer

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  • Electrodes Of Semiconductors (AREA)
CN201280023455.4A 2011-06-15 2012-05-29 碳化硅半导体器件及其制造方法 Pending CN103548144A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-132784 2011-06-15
JP2011132784A JP2013004636A (ja) 2011-06-15 2011-06-15 炭化珪素半導体装置およびその製造方法
PCT/JP2012/063722 WO2012172965A1 (ja) 2011-06-15 2012-05-29 炭化珪素半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN103548144A true CN103548144A (zh) 2014-01-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280023455.4A Pending CN103548144A (zh) 2011-06-15 2012-05-29 碳化硅半导体器件及其制造方法

Country Status (7)

Country Link
US (1) US20120319134A1 (enExample)
EP (1) EP2722892A4 (enExample)
JP (1) JP2013004636A (enExample)
KR (1) KR20140021609A (enExample)
CN (1) CN103548144A (enExample)
TW (1) TW201308621A (enExample)
WO (1) WO2012172965A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463541A (zh) * 2014-05-23 2017-02-22 松下知识产权经营株式会社 碳化硅半导体装置

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* Cited by examiner, † Cited by third party
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JP2015015352A (ja) 2013-07-04 2015-01-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6098417B2 (ja) * 2013-07-26 2017-03-22 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015156429A (ja) * 2014-02-20 2015-08-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6295797B2 (ja) * 2014-04-10 2018-03-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2017028219A (ja) * 2015-07-28 2017-02-02 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018074088A (ja) * 2016-11-02 2018-05-10 富士電機株式会社 半導体装置
JP6939278B2 (ja) * 2017-09-01 2021-09-22 株式会社デンソー スイッチング装置
DE102019109368B4 (de) * 2018-05-15 2024-07-04 Infineon Technologies Ag Halbleitervorrichtung mit siliziumcarbidkörper und herstellungsverfahren
JP7180425B2 (ja) * 2019-02-06 2022-11-30 住友電気工業株式会社 炭化珪素半導体装置
US20210343847A1 (en) * 2020-04-30 2021-11-04 Cree, Inc. Diffusion and/or enhancement layers for electrical contact regions
IT202100003653A1 (it) * 2021-02-17 2022-08-17 St Microelectronics Srl Dispositivo mosfet di carburo di silicio, a conduzione verticale, avente struttura di polarizzazione di porta perfezionata e relativo procedimento di fabbricazione
US20230335595A1 (en) * 2022-04-13 2023-10-19 Leap Semiconductor Corp. Silicon carbide semiconductor power transistor and method of manufacturing the same
JP2025038403A (ja) * 2023-09-07 2025-03-19 株式会社東芝 半導体装置

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US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
US20060097267A1 (en) * 2004-11-08 2006-05-11 C/O Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
US20060205195A1 (en) * 2005-03-14 2006-09-14 Denso Corporation Method of forming an ohmic contact in wide band semiconductor
CN102017159A (zh) * 2008-09-12 2011-04-13 住友电气工业株式会社 碳化硅半导体器件及其制造方法

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JPH07273326A (ja) * 1994-03-31 1995-10-20 Toshiba Corp 半導体装置とその製造方法
US5736753A (en) * 1994-09-12 1998-04-07 Hitachi, Ltd. Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
JPH11251592A (ja) * 1998-01-05 1999-09-17 Denso Corp 炭化珪素半導体装置
JP2001284587A (ja) * 2000-03-28 2001-10-12 Kaga Toshiba Electron Kk 半導体装置およびその製造方法
JP4917246B2 (ja) * 2003-11-17 2012-04-18 ローム株式会社 半導体装置およびその製造方法
JP5017823B2 (ja) * 2005-09-12 2012-09-05 富士電機株式会社 半導体素子の製造方法
JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5588670B2 (ja) 2008-12-25 2014-09-10 ローム株式会社 半導体装置
KR101230680B1 (ko) * 2009-04-30 2013-02-07 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
JP5721351B2 (ja) * 2009-07-21 2015-05-20 ローム株式会社 半導体装置

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US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
US6274905B1 (en) * 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
US20060097267A1 (en) * 2004-11-08 2006-05-11 C/O Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
US20060205195A1 (en) * 2005-03-14 2006-09-14 Denso Corporation Method of forming an ohmic contact in wide band semiconductor
CN102017159A (zh) * 2008-09-12 2011-04-13 住友电气工业株式会社 碳化硅半导体器件及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463541A (zh) * 2014-05-23 2017-02-22 松下知识产权经营株式会社 碳化硅半导体装置
CN106463541B (zh) * 2014-05-23 2019-05-21 松下知识产权经营株式会社 碳化硅半导体装置

Also Published As

Publication number Publication date
KR20140021609A (ko) 2014-02-20
JP2013004636A (ja) 2013-01-07
EP2722892A4 (en) 2015-01-21
TW201308621A (zh) 2013-02-16
US20120319134A1 (en) 2012-12-20
EP2722892A1 (en) 2014-04-23
WO2012172965A1 (ja) 2012-12-20

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Application publication date: 20140129