JP2014107419A - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP2014107419A JP2014107419A JP2012259550A JP2012259550A JP2014107419A JP 2014107419 A JP2014107419 A JP 2014107419A JP 2012259550 A JP2012259550 A JP 2012259550A JP 2012259550 A JP2012259550 A JP 2012259550A JP 2014107419 A JP2014107419 A JP 2014107419A
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- silicon dioxide
- silicon
- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 146
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 144
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 59
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 396
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 198
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 198
- 239000012535 impurity Substances 0.000 claims abstract description 134
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
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- 230000015556 catabolic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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- 239000012212 insulator Substances 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】炭化珪素基板10は、第1の不純物領域17、第1の不純物領域17と接するウェル領域13と、ウェル領域13によって第1の不純物領域17と隔てられた第2の不純物領域14とを含む。第1の主面10aは、チャネル領域CHと接する第1の領域10dと、第1の領域10dとは異なる第2の領域10fとを含む。第2の領域10f上に珪素を含む材料22aが形成される。第1の領域10d上に第1の二酸化珪素領域15bが形成される。珪素を含む材料22aを酸化して第2の二酸化珪素領域15cが形成される。ゲート電極27と電気的に接続され、かつ第2の二酸化珪素領域15cに対向した位置にゲートランナー2が形成される。
【選択図】図1
Description
図1を参照して、実施の形態1における炭化珪素半導体装置であるMOSFET1は、炭化珪素基板10と、二酸化珪素層15と、ゲート電極27と、ソースコンタクト電極16と、ドレイン電極20と、ゲートランナー2を主に有している。
本実施の形態に係るMOSFET1およびその製造方法によれば、第2の領域10f上に珪素を含む材料22aが形成された後、当該珪素を含む材料22aを酸化して第2の二酸化珪素領域15cが形成される。第2の二酸化珪素領域15cに対向した位置に配置されたゲートランナー2が形成される。これにより、炭化珪素基板10の表面荒れを抑制しつつ、炭化珪素基板10とゲートランナー2との絶縁性能を向上させることができる。
図11および図12を参照して、実施の形態2における炭化珪素半導体装置であるMOSFET1の構成について説明する。実施の形態2に係るMOSFET1は、ゲートランナー2がチップの中央付近に配置されている点において実施の形態1に係るMOSFET1と異なっており、他の構成に関しては同様である。
Claims (13)
- 互いに対向する第1の主面および第2の主面を有する炭化珪素基板を準備する工程を備え、
前記炭化珪素基板は、第1導電型を有する第1の不純物領域と、前記第1の不純物領域と接しかつ前記第1導電型と異なる第2導電型を有するウェル領域と、前記ウェル領域によって前記第1の不純物領域と隔てられかつ前記第1導電型を有する第2の不純物領域とを含み、
前記第1の主面は、前記第1の不純物領域と前記第2の不純物領域とに挟まれたチャネル領域と接する第1の領域と、前記第1の領域とは異なる第2の領域とを含み、さらに、
前記第2の領域上に珪素を含む材料を形成する工程と、
前記第1の領域上に第1の二酸化珪素領域を形成する工程と、
前記珪素を含む材料を酸化して第2の二酸化珪素領域を形成する工程と、
前記第1の二酸化珪素領域および前記第2の二酸化珪素領域に接してゲート電極を形成する工程と、
前記ゲート電極と電気的に接続され、かつ前記第2の二酸化珪素領域に対向した位置に配置されたゲートランナーを形成する工程とを備え、
前記第2の二酸化珪素領域の厚みは、前記第1の二酸化珪素領域の厚みより大きい、炭化珪素半導体装置の製造方法。 - 前記第1の二酸化珪素領域を形成する工程および前記第2の二酸化珪素領域を形成する工程は、前記第1の領域と前記珪素を含む材料とを同時に酸化することにより行われる、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第2の二酸化珪素領域の厚みは、前記第1の二酸化珪素領域の厚みの1.5倍以上5倍以下である、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 平面視において前記ゲートランナーに囲まれるように配置されたソース配線を形成する工程をさらに備えた、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記ゲートランナーは前記第2の不純物領域よりも外側に形成される、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板は、前記ウェル領域に接するJTE領域をさらに含み、
前記ゲートランナーは前記JTE領域よりも内側に形成される、請求項1〜5のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記第2の二酸化珪素領域は前記第1の主面の端部に接するように形成される、請求項1〜6のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 平面視において前記ゲートランナーを挟むように配置されたソース配線を形成する工程をさらに備えた、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記ゲートランナーを形成する工程は、前記ゲートランナーに電圧を印加するためのゲートパッドを形成する工程を含み、
前記ゲートランナーは前記ゲートパッドから枝分かれ状に延伸するように形成される、請求項1に記載の炭化珪素半導体装置の製造方法。 - 前記第1の不純物領域に接して第2の珪素を含む材料を形成する工程と、
前記第2の珪素を含む材料を酸化することにより第3の二酸化珪素領域を形成する工程をさらに備えた、請求項1〜9のいずれか1項に記載の炭化珪素半導体装置の製造方法。 - 前記第2の二酸化珪素領域が形成される工程および前記第3の二酸化珪素領域が形成される工程が同時に行われる、請求項10に記載の炭化珪素半導体装置の製造方法。
- 互いに対向する第1の主面および第2の主面を有する炭化珪素基板を備え、
前記炭化珪素基板は、第1導電型を有する第1の不純物領域と、前記第1の不純物領域と接しかつ前記第1導電型と異なる第2導電型を有するウェル領域と、前記ウェル領域によって前記第1の不純物領域と隔てられかつ前記第1導電型を有する第2の不純物領域とを含み、
前記第1の主面は、前記第1の不純物領域と前記第2の不純物領域とに挟まれたチャネル領域と接する第1の領域と、前記第1の領域とは異なる第2の領域とを含み、さらに、
前記第1の領域上に配置された第1の二酸化珪素領域と、
前記第2の領域上に配置された第2の二酸化珪素領域と、
前記第1の二酸化珪素領域および前記第2の二酸化珪素領域に接するゲート電極と、
前記ゲート電極と電気的に接続され、かつ前記第2の二酸化珪素領域に対向した位置に配置されたゲートランナーとを備え、
前記第2の二酸化珪素領域は、前記第1の二酸化珪素領域よりも厚く、
前記第2の二酸化珪素領域の炭素濃度は、前記第1の二酸化珪素領域の炭素濃度よりも低い、炭化珪素半導体装置。 - 前記第2の二酸化珪素領域の厚みは前記第1の二酸化珪素領域の厚みの1.5倍以上5倍以下である、請求項12に記載の炭化珪素半導体装置。
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