JP2015192027A - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP2015192027A JP2015192027A JP2014068301A JP2014068301A JP2015192027A JP 2015192027 A JP2015192027 A JP 2015192027A JP 2014068301 A JP2014068301 A JP 2014068301A JP 2014068301 A JP2014068301 A JP 2014068301A JP 2015192027 A JP2015192027 A JP 2015192027A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 206
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 205
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000012535 impurity Substances 0.000 claims abstract description 228
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 238000005468 ion implantation Methods 0.000 claims description 41
- 238000009413 insulation Methods 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 52
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- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 239000013078 crystal Substances 0.000 description 22
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- 239000000969 carrier Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
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- 150000002500 ions Chemical class 0.000 description 5
- -1 nitrogen ions Chemical class 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
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- 238000003892 spreading Methods 0.000 description 3
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- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
Description
最初に本発明の実施態様を列記して説明する。
[本発明の実施形態の詳細]
以下、図面に基づいて本発明の実施の形態について説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また、負の指数については、結晶学上、”−”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。
まず、本発明の実施の形態1に係る炭化珪素半導体装置としてのMOSFETの構成について説明する。
次に、本発明の実施の形態2に係る炭化珪素半導体装置としてのMOSFETの構成について説明する。実施の形態2に係るMOSFETは、埋込領域17がトレンチTRの底部BTに接している点において実施の形態1に係るMOSFETと異なっており、他の構成は、実施の形態1に係るMOSFETと同様である。そのため、同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
次に、本発明の実施の形態3に係る炭化珪素半導体装置としてのMOSFETの構成について説明する。実施の形態3に係るMOSFETは、トレンチTRの底部BTに接して第2領域12bが設けられ、第2領域12bの下部に接して埋込領域17が設けられている点において実施の形態1に係るMOSFETと異なっており、他の構成は、実施の形態1に係るMOSFETと同様である。そのため、同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
次に、本発明の実施の形態4に係る炭化珪素半導体装置としてのMOSFETの構成について説明する。実施の形態4に係るMOSFETは、ベース領域13およびコンタクト領域18に接する埋込領域17が設けられていない点において実施の形態2に係るMOSFETと異なっており、他の構成は、実施の形態2に係るMOSFETと同様である。そのため、同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
5 炭化珪素エピタキシャル層
10 炭化珪素基板
10a 第1の主面
10b 第2の主面
11 炭化珪素単結晶基板
12 第1不純物領域
12a 第1領域
12b 第2領域
12c 第3領域
13 ベース領域(第2不純物領域)
13a 端部
14 ソース領域(第3不純物領域)
15 ゲート絶縁膜
16 ソース電極
17 埋込領域
18 コンタクト領域
19 ソース配線
20 ドレイン電極
21 層間絶縁膜
22 バッファ層
24 保護膜
27 ゲート電極
31,33,34 イオン注入マスク
32 スルー膜
35 エッチングマスク
BT 底部
CH チャネル領域
SW 側部
TR トレンチ
Claims (20)
- 第1の主面と、前記第1の主面と反対側の第2の主面とを有する炭化珪素基板を備え、
前記炭化珪素基板は、第1導電型を有する第1不純物領域と、前記第1不純物領域と接し、かつ前記第1導電型とは異なる第2導電型を有する第2不純物領域と、前記第1導電型を有し、前記第2不純物領域によって前記第1不純物領域から隔てられた第3不純物領域とを含み、
前記第1不純物領域は、前記第2不純物領域と接する第1領域と、前記第1領域と接し、前記第1領域から見て前記第2不純物領域と反対側に位置し、かつ前記第1領域よりも高い不純物濃度を有する第2領域と、前記第2領域と接し、前記第2領域から見て前記第1領域と反対側に位置し、かつ前記第2領域よりも低い不純物濃度を有する第3領域とを有し、
前記炭化珪素基板の前記第1の主面には、前記第1の主面と連接する側部と、前記側部と連接する底部とを有するトレンチが形成されており、さらに、
前記トレンチの前記側部において、前記第1領域と、前記第2不純物領域と、前記第3不純物領域とに接するゲート絶縁膜とを備えた、炭化珪素半導体装置。 - 前記第1領域の不純物濃度は、1.5×1016cm-3以下である、請求項1に記載の炭化珪素半導体装置。
- 前記第2領域の不純物濃度は、2×1016cm-3以上である、請求項1または請求項2に記載の炭化珪素半導体装置。
- 前記第1の主面の法線方向に沿った前記第1領域の厚みは、0.1μm以上0.5μm以下である、請求項1〜請求項3のいずれか1項に記載の炭化珪素半導体装置。
- 前記第1の主面の法線方向に沿った前記第2領域の厚みは、0.3μm以上2μm以下である、請求項1〜請求項4のいずれか1項に記載の炭化珪素半導体装置。
- 前記炭化珪素基板は、前記第2導電型を有し、前記第2不純物領域よりも高い不純物濃度を有し、かつ前記第2の主面側の前記第2不純物領域の端部の一部から前記第2の主面に向かって延在する埋込領域をさらに含む、請求項1〜請求項5のいずれか1項に記載の炭化珪素半導体装置。
- 前記第2の主面側の前記埋込領域の端部は、前記第2領域に接している、請求項6に記載の炭化珪素半導体装置。
- 前記炭化珪素基板は、前記第2導電型を有し、前記第2不純物領域よりも高い不純物濃度を有し、かつ前記トレンチの前記底部から前記第2の主面に向かって延在する埋込領域をさらに含む、請求項1〜請求項5のいずれか1項に記載の炭化珪素半導体装置。
- 前記第1の主面と平行な方向における、前記埋込領域の幅は、前記トレンチの前記底部の幅よりも小さい、請求項8に記載の炭化珪素半導体装置。
- 前記ゲート絶縁膜は、前記トレンチの前記底部において前記第2領域に接しており、
前記炭化珪素基板は、前記第2導電型を有し、前記第2不純物領域よりも高い不純物濃度を有し、かつ前記底部と反対側の前記第2領域の端部から前記第2の主面に向かって延在する埋込領域をさらに含む、請求項1〜請求項5のいずれか1項に記載の炭化珪素半導体装置。 - 前記炭化珪素基板は、前記第1導電型を有し、前記第3領域よりも高い不純物濃度を有し、かつ前記第2の主面側の前記第3領域に接するバッファ層をさらに含む、請求項1〜請求項10のいずれか1項に記載の炭化珪素半導体装置。
- 第1の主面と、前記第1の主面と反対側の第2の主面とを有する炭化珪素基板を形成する工程を備え、
前記炭化珪素基板は、第1導電型を有する第1不純物領域と、前記第1不純物領域と接し、かつ前記第1導電型とは異なる第2導電型を有する第2不純物領域と、前記第1導電型を有し、前記第2不純物領域によって前記第1不純物領域から隔てられた第3不純物領域とを含み、
前記第1不純物領域は、前記第2不純物領域と接する第1領域と、前記第1領域と接し、前記第1領域から見て前記第2不純物領域と反対側に位置し、かつ前記第1領域よりも高い不純物濃度を有する第2領域と、前記第2領域と接し、前記第2領域から見て前記第1領域と反対側に位置し、かつ前記第2領域よりも低い不純物濃度を有する第3領域とを有し、
前記炭化珪素基板の前記第1の主面には、前記第1の主面と連接する側部と、前記側部と連接する底部とを有するトレンチが形成されており、さらに、
前記トレンチの前記側部において、前記第1領域と、前記第2不純物領域と、前記第3不純物領域とに接するゲート絶縁膜を形成する工程を備えた、炭化珪素半導体装置の製造方法。 - 前記炭化珪素基板を形成する工程は、
エピタキシャル成長により前記第3領域を形成する工程と、
前記第3領域に対してイオン注入を行うことにより、前記第2導電型を有し、かつ前記第2不純物領域よりも高い不純物濃度を有する埋込領域を形成する工程とを含む、請求項12に記載の炭化珪素半導体装置の製造方法。 - 前記炭化珪素基板を形成する工程は、前記埋込領域および前記第3領域の双方に対してイオン注入を行うことにより前記第2領域を形成する工程と、
前記埋込領域および前記第2領域の双方に対してイオン注入を行うことにより前記第1領域を形成する工程とを含む、請求項13に記載の炭化珪素半導体装置の製造方法。 - 前記第2領域を形成する工程におけるイオン注入エネルギーは、前記第1領域を形成する工程におけるイオン注入エネルギーよりも大きい、請求項14に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板を形成する工程は、
前記埋込領域と前記第1領域とに接する前記第2不純物領域をエピタキシャル成長により形成する工程とを含む、請求項14または請求項15に記載の炭化珪素半導体装置の製造方法。 - 前記第1領域の不純物濃度は、1.5×1016cm-3以下である、請求項12〜請求項16のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第2領域の不純物濃度は、2×1016cm-3以上である、請求項12〜請求項17のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第1の主面の法線方向に沿った前記第1領域の厚みは、0.1μm以上0.5μm以下である、請求項12〜請求項18のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第1の主面の法線方向に沿った前記第2領域の厚みは、0.3μm以上2μm以下である、請求項12〜請求項19のいずれか1項に記載の炭化珪素半導体装置の製造方法。
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