JP2020533811A - ショットキーダイオードのmosfetとの集積化 - Google Patents
ショットキーダイオードのmosfetとの集積化 Download PDFInfo
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Abstract
Description
n型基板(1)と、
n型基板(1)の上のn型ドリフトエピタキシャル層(3)と、
n型ドリフトエピタキシャル層(3)の上のn型エピタキシャル再成長層(6)と、
n型ドリフトエピタキシャル層(3)においてグリッドを備え、n型エピタキシャル再成長層(6)と接触するp型グリッド層(4)と、
n型ドリフトエピタキシャル層(3)にあり、n型エピタキシャル再成長層(6)と接触するp型フィーダ層(5)であって、グリッド層(4)とp型フィーダ層(5)とが接続されている、p型フィーダ層(5)と、
少なくとも部分的にp型フィーダ層(5)の上に与えられたオーミックコンタクト(7)と、
pウェル領域(8a、8b)と、
n+ソース領域(9a、9b)と、
ゲート酸化物(10)と、
ソースオーミックコンタクト(11)であって、オーミックコンタクト(7)は、メタライズ層(14)を介してソースオーミックコンタクト(11)に接続され、pウェル領域(8a、8b)は、n型エピタキシャル再成長層(6)、n+ソース領域(9a、9b)、ゲート酸化物(10)、及びソースオーミックコンタクト(11)と接触するように配置され、n+ソース領域(9a、9b)は、pウェル領域(8a、8b)、ゲート酸化物(10)、及びソースオーミックコンタクト(11)と接触するように配置されている、ソースオーミックコンタクト(11)と、
ゲートコンタクト(12)と、
メタライズ層(14)からのゲートコンタクト(12)領域の絶縁のための絶縁層(13)であって、ゲート酸化物(10)は、pウェル領域(8a、8b)、n+ソース領域(9a、9b)、ゲートコンタクト(12)、及び絶縁層(13)と接触し、ゲート酸化物(10)は、任意にn型エピタキシャル再成長層(6)及びソースオーミックコンタクト(11)と接触する、絶縁層(13)と、
ショットキーコンタクト(15)であって、メタライズ層(14)は、少なくとも部分的にデバイスの上に与えられ、ショットキーコンタクト(15)と接触し、ショットキーコンタクト(15)は、n型エピタキシャル再成長層(6)と接触する、ショットキーコンタクト(15)と、
ドレインオーミックコンタクト及びメタライズ層(17)と
を備えるデバイスが提供される。
n型基板(1)と、
n型基板(1)の上のn型ドリフトエピタキシャル層(3)と、
n型ドリフトエピタキシャル層(3)の上のn型エピタキシャル再成長層(6)と、
n型ドリフトエピタキシャル層(3)においてグリッドを備え、n型エピタキシャル再成長層(6)と接触するp型グリッド層(4)と、
n型ドリフトエピタキシャル層(3)にあり、n型エピタキシャル再成長層(6)と接触するp型フィーダ層(5)であって、グリッド層(4)とp型フィーダ層(5)とが接続されている、p型フィーダ層(5)と、
少なくとも部分的にp型フィーダ層(5)の上に与えられたオーミックコンタクト(7)と、
pウェル領域(8a、8b)と、
n+ソース領域(9a、9b)と、
ゲート酸化物(10)と、
ソースオーミックコンタクト(11)であって、オーミックコンタクト(7)は、メタライズ層(14)を介してソースオーミックコンタクト(11)に接続され、pウェル領域(8a、8b)は、n型エピタキシャル再成長層(6)、n+ソース領域(9a、9b)、ゲート酸化物(10)、及びソースオーミックコンタクト(11)と接触するように配置され、n+ソース領域(9a、9b)は、pウェル領域(8a、8b)、ゲート酸化物(10)、及びソースオーミックコンタクト(11)と接触するように配置されている、ソースオーミックコンタクト(11)と、
ゲートコンタクト(12)と、
メタライズ層(14)からのゲートコンタクト(12)領域の絶縁のための絶縁層(13)であって、ゲート酸化物(10)は、pウェル領域(8a、8b)、n+ソース領域(9a、9b)、ゲートコンタクト(12)、及び絶縁層(13)と接触し、ゲート酸化物(10)は、任意にn型エピタキシャル再成長層(6)及びソースオーミックコンタクト(11)と接触する、絶縁層(13)と、
ショットキーコンタクト(15)であって、メタライズ層(14)は、少なくとも部分的にデバイスの上に与えられ、ショットキーコンタクト(15)と接触し、ショットキーコンタクト(15)は、n型エピタキシャル再成長層(6)と接触する、ショットキーコンタクト(15)と、
ドレインオーミックコンタクト及びメタライズ層(17)と
を備えるデバイスが提供される。
Claims (21)
- デバイスであって、
n型基板(1)と、
前記n型基板(1)の上のn型ドリフトエピタキシャル層(3)と、
前記n型ドリフトエピタキシャル層(3)の上のn型エピタキシャル再成長層(6)と、
前記n型ドリフトエピタキシャル層(3)においてグリッドを備え、前記n型エピタキシャル再成長層(6)と接触するp型グリッド層(4)と、
前記n型ドリフトエピタキシャル層(3)にあり、前記n型エピタキシャル再成長層(6)と接触するp型フィーダ層(5)であって、前記グリッド層(4)と前記p型フィーダ層(5)とが接続されている、p型フィーダ層(5)と、
少なくとも部分的に前記p型フィーダ層(5)の上に与えられたオーミックコンタクト(7)と、
pウェル領域(8a、8b)と、
n+ソース領域(9a、9b)と、
ゲート酸化物(10)と、
ソースオーミックコンタクト(11)であって、前記オーミックコンタクト(7)は、メタライズ層(14)を介して前記ソースオーミックコンタクト(11)に接続され、前記pウェル領域(8a、8b)は、前記n型エピタキシャル再成長層(6)、前記n+ソース領域(9a、9b)、前記ゲート酸化物(10)、及び前記ソースオーミックコンタクト(11)と接触するように配置され、前記n+ソース領域(9a、9b)は、前記pウェル領域(8a、8b)、前記ゲート酸化物(10)、及び前記ソースオーミックコンタクト(11)と接触するように配置されている、ソースオーミックコンタクト(11)と、
ゲートコンタクト(12)と、
前記メタライズ層(14)からのゲートコンタクト(12)領域の絶縁のための絶縁層(13)であって、前記ゲート酸化物(10)は、前記pウェル領域(8a、8b)、前記n+ソース領域(9a、9b)、前記ゲートコンタクト(12)、及び前記絶縁層(13)と接触し、前記ゲート酸化物(10)は、任意に前記n型エピタキシャル再成長層(6)及び前記ソースオーミックコンタクト(11)と接触する、絶縁層(13)と、
ショットキーコンタクト(15)であって、前記メタライズ層(14)は、少なくとも部分的に前記デバイスの上に与えられ、前記ショットキーコンタクト(15)と接触し、前記ショットキーコンタクト(15)は、前記n型エピタキシャル再成長層(6)と接触する、ショットキーコンタクト(15)と、
ドレインオーミックコンタクト及びメタライズ層(17)と
を備えるデバイス。 - 前記デバイスは、前記n型基板(1)と前記n型ドリフトエピタキシャル層(3)との間にn+型エピタキシャルバッファ層(2)を備える、請求項1に記載のデバイス。
- 前記デバイスは、前記n型エピタキシャル再成長層(6)、前記pウェル領域(8a、8b)、及び前記ゲート酸化物(10)と接触するJFET領域(16)を備える、請求項1又は2に記載のデバイス。
- 前記pウェル領域は、注入層(8a)を備える、請求項1〜3の何れか一項に記載のデバイス。
- 前記pウェル領域は、エピタキシャル層(8b)を備える、請求項1〜3の何れか一項に記載のデバイス。
- 前記n+ソース領域は、注入層(9a)を備える、請求項1〜5の何れか一項に記載のデバイス。
- 前記n+ソース領域は、エピタキシャル層(9b)を備える、請求項1、2、3、及び5の何れか一項に記載のデバイス。
- 前記ゲートコンタクト(12)はポリシリコンを含む、請求項1〜7の何れか一項に記載のデバイス。
- 前記ショットキーコンタクト(15)は金属を含む、請求項1〜8の何れか一項に記載のデバイス。
- 前記ショットキーコンタクト(15)はポリシリコンを含む、請求項1〜8の何れか一項に記載のデバイス。
- 前記p型グリッド層(4)は複数のグリッドを含み、前記グリッドの少なくとも一部は、前記グリッドの下に中央に位置決めされた棚部を有し、前記棚部は、前記n型基板(1)に向かって位置決めされ、前記棚部は、前記グリッドより小さい横寸法を有する、請求項1〜10の何れか一項に記載のデバイス。
- 前記p型グリッド層(4)は複数のグリッドを含み、各グリッドは上部及び下部を備え、前記下部は前記n型基板(1)に面し、上部はエピタキシャル成長を使用して製造され、下部はイオン注入を使用して製造されている、請求項1〜11の何れか一項に記載のデバイス。
- 前記n型エピタキシャル再成長層(6)は、ドリフト層又は電流拡散層の何れかとして異なるドーピングレベル及び厚さを有する少なくとも2つのn型エピタキシャル再成長層を含む、請求項1〜12の何れか一項に記載のデバイス。
- 前記p型グリッド層(4)に最も近接する前記n型エピタキシャル再成長層(6)は、前記p型グリッド層(4)から最も離間する前記n型エピタキシャル再成長層(6)と比較して、より高いドーピング濃度を有する、請求項13に記載のデバイス。
- 前記p型グリッド層(4)に最も近接する前記n型エピタキシャル再成長層(6)は、前記p型グリッド層(4)から最も離間する前記n型エピタキシャル再成長層(6)と比較して、より低いドーピング濃度を有する、請求項13に記載のデバイス。
- 前記n型エピタキシャル再成長層(6)は、ドーピング濃度において勾配を有する、請求項13〜15の何れか一項に記載のデバイス。
- 前記n型エピタキシャル再成長層(6)におけるドーピング濃度は、前記n型エピタキシャル再成長層(6)の中央部分と比較して、前記p型グリッド層(4)に最も近接する部分及び前記p型グリッド層(4)から最も離間する部分においてより低い、請求項16に記載のデバイス。
- 前記p型グリッド層(4)は、少なくとも第1の方向に反復構造を有し、前記反復構造は、少なくとも前記第1の方向に規則的な距離で反復し、前記構造(8〜13)及び前記ショットキーコンタクト(15)は、少なくとも第2の方向に反復構造を有し、前記反復構造は、少なくとも前記第2の方向に規則的な距離で反復する、請求項1〜17の何れか一項に記載のデバイス。
- 任意の可能な画定された方向に沿って、前記p型グリッド層(4)の反復構造間の距離は、前記構造(8、9、10、11、12、13)及び前記ショットキーコンタクト(15)の反復構造間の距離と同じではなく、前記距離は同じ方向に沿って測定される、請求項18に記載のデバイス。
- 前記構造(8、9、10、11、12、13)及び前記ショットキーコンタクト(15)は交互に反復され、前記ショットキーコンタクト(15)は全ての構造(8、9、10、11、12、13)の間にある、請求項1〜19の何れか一項に記載のデバイス。
- 前記オーミックコンタクト(7)と接触する少なくとも1つのエピタキシャル成長p型領域(18)があり、前記p型フィーダ層(5)は、各エピタキシャル成長p型領域(18)のための少なくとも1つの領域を備え、前記n型基板(1)と平行な平面における前記エピタキシャル成長p型領域(18)の投影は、前記エピタキシャル成長p型領域(18)の前記投影を制限する境界線(l)を有し、前記p型フィーダ層(5)は、少なくとも、前記n型基板(1)に平行な平面における前記p型フィーダ層(5)の投影が前記境界線(l)の周囲にあって、前記境界線(l)から前記周囲における任意の点の距離が最大0.5μmであるように与えられ、前記p型フィーダ層(5)はまた、前記エピタキシャル成長p型領域(18)の下部から前記p型フィーダ層(5)の上部の距離が0〜5μmの範囲にあるように与えられ、上方向は、前記n型基板(1)から垂直に離間する方向によって与えられる、請求項1〜20の何れか一項に記載のデバイス。
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JPH11330498A (ja) * | 1998-05-07 | 1999-11-30 | Fuji Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
JP2004006647A (ja) * | 2002-03-26 | 2004-01-08 | Toshiba Corp | 半導体装置 |
JP2005229070A (ja) * | 2004-02-16 | 2005-08-25 | Matsushita Electric Ind Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
JP2014170778A (ja) * | 2013-03-01 | 2014-09-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP2015026727A (ja) * | 2013-07-26 | 2015-02-05 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2015192027A (ja) * | 2014-03-28 | 2015-11-02 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置およびその製造方法 |
JP2016009712A (ja) * | 2014-06-23 | 2016-01-18 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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WO2019053203A1 (en) | 2019-03-21 |
US20220029010A1 (en) | 2022-01-27 |
JP7389038B2 (ja) | 2023-11-29 |
CN117457651A (zh) | 2024-01-26 |
US11581431B2 (en) | 2023-02-14 |
US20210126121A1 (en) | 2021-04-29 |
CN111164762B (zh) | 2023-11-24 |
EP3682484A1 (en) | 2020-07-22 |
US11984497B2 (en) | 2024-05-14 |
SE541402C2 (en) | 2019-09-17 |
SE1751139A1 (en) | 2019-03-16 |
CN111164762A (zh) | 2020-05-15 |
US11114557B2 (en) | 2021-09-07 |
JP2023145533A (ja) | 2023-10-11 |
US20230155019A1 (en) | 2023-05-18 |
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