JP2007080978A5 - - Google Patents
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- Publication number
- JP2007080978A5 JP2007080978A5 JP2005264484A JP2005264484A JP2007080978A5 JP 2007080978 A5 JP2007080978 A5 JP 2007080978A5 JP 2005264484 A JP2005264484 A JP 2005264484A JP 2005264484 A JP2005264484 A JP 2005264484A JP 2007080978 A5 JP2007080978 A5 JP 2007080978A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phase change
- insulating film
- electrode
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 60
- 239000011229 interlayer Substances 0.000 claims 15
- 238000000605 extraction Methods 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000059 patterning Methods 0.000 claims 5
- 230000002093 peripheral effect Effects 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 150000004770 chalcogenides Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005264484A JP4817410B2 (ja) | 2005-09-12 | 2005-09-12 | 相変化メモリ素子およびその製造方法 |
| CN2006101290736A CN1933208B (zh) | 2005-09-12 | 2006-09-08 | 相变存储器装置及其制造方法 |
| US11/518,172 US7728321B2 (en) | 2005-09-12 | 2006-09-11 | Phase change memory device and method of manufacturing the device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005264484A JP4817410B2 (ja) | 2005-09-12 | 2005-09-12 | 相変化メモリ素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007080978A JP2007080978A (ja) | 2007-03-29 |
| JP2007080978A5 true JP2007080978A5 (enExample) | 2009-02-19 |
| JP4817410B2 JP4817410B2 (ja) | 2011-11-16 |
Family
ID=37878913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005264484A Expired - Lifetime JP4817410B2 (ja) | 2005-09-12 | 2005-09-12 | 相変化メモリ素子およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7728321B2 (enExample) |
| JP (1) | JP4817410B2 (enExample) |
| CN (1) | CN1933208B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7671356B2 (en) * | 2005-11-03 | 2010-03-02 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
| TWI305678B (en) * | 2006-08-14 | 2009-01-21 | Ind Tech Res Inst | Phase-change memory and fabricating method thereof |
| US7638357B2 (en) * | 2006-08-25 | 2009-12-29 | Micron Technology, Inc. | Programmable resistance memory devices and systems using the same and methods of forming the same |
| KR100967675B1 (ko) * | 2006-11-16 | 2010-07-07 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
| KR100876767B1 (ko) | 2007-09-06 | 2009-01-07 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 형성 방법 |
| US8043888B2 (en) | 2008-01-18 | 2011-10-25 | Freescale Semiconductor, Inc. | Phase change memory cell with heater and method therefor |
| US8563355B2 (en) * | 2008-01-18 | 2013-10-22 | Freescale Semiconductor, Inc. | Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET |
| US7888165B2 (en) | 2008-08-14 | 2011-02-15 | Micron Technology, Inc. | Methods of forming a phase change material |
| US7834342B2 (en) | 2008-09-04 | 2010-11-16 | Micron Technology, Inc. | Phase change material and methods of forming the phase change material |
| JP2010087007A (ja) * | 2008-09-29 | 2010-04-15 | Elpida Memory Inc | 相変化メモリ装置及びその製造方法 |
| US8193522B2 (en) | 2009-04-09 | 2012-06-05 | Qualcomm Incorporated | Diamond type quad-resistor cells of PRAM |
| US8470635B2 (en) * | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
| KR101038997B1 (ko) * | 2009-12-22 | 2011-06-03 | 주식회사 하이닉스반도체 | 디스터번스를 줄일 수 있는 상변화 메모리 장치 및 그 제조방법 |
| US8188897B2 (en) | 2010-10-29 | 2012-05-29 | Hewlett-Packard Development Company, L.P. | Analog to digital converter |
| US8361833B2 (en) | 2010-11-22 | 2013-01-29 | Micron Technology, Inc. | Upwardly tapering heaters for phase change memories |
| KR101934783B1 (ko) | 2012-07-02 | 2019-01-03 | 삼성전자주식회사 | 상변화 메모리 장치의 제조 방법 |
| CN102810637A (zh) * | 2012-09-13 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | 用于替代dram及flash的相变存储单元及其制作方法 |
| CN109786550B (zh) | 2019-03-18 | 2024-04-05 | 北京时代全芯存储技术股份有限公司 | 相变化记忆体及其制造方法 |
| CN119110596B (zh) * | 2023-06-01 | 2025-10-03 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
| US6670628B2 (en) | 2002-04-04 | 2003-12-30 | Hewlett-Packard Company, L.P. | Low heat loss and small contact area composite electrode for a phase change media memory device |
| GB2407705A (en) * | 2002-08-21 | 2005-05-04 | Ovonyx Inc | Utilizing atomic layer deposition for programmable device |
| KR100504700B1 (ko) | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
| JP2005150243A (ja) | 2003-11-12 | 2005-06-09 | Toshiba Corp | 相転移メモリ |
| KR100568109B1 (ko) | 2003-11-24 | 2006-04-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
| KR100533958B1 (ko) * | 2004-01-05 | 2005-12-06 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100663348B1 (ko) * | 2004-09-02 | 2007-01-02 | 삼성전자주식회사 | 몰딩막 및 형성막 패턴 사이에 개재된 상전이막 패턴을갖는 피이. 램들 및 그 형성방법들. |
-
2005
- 2005-09-12 JP JP2005264484A patent/JP4817410B2/ja not_active Expired - Lifetime
-
2006
- 2006-09-08 CN CN2006101290736A patent/CN1933208B/zh active Active
- 2006-09-11 US US11/518,172 patent/US7728321B2/en active Active
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