JP4817410B2 - 相変化メモリ素子およびその製造方法 - Google Patents

相変化メモリ素子およびその製造方法 Download PDF

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Publication number
JP4817410B2
JP4817410B2 JP2005264484A JP2005264484A JP4817410B2 JP 4817410 B2 JP4817410 B2 JP 4817410B2 JP 2005264484 A JP2005264484 A JP 2005264484A JP 2005264484 A JP2005264484 A JP 2005264484A JP 4817410 B2 JP4817410 B2 JP 4817410B2
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JP
Japan
Prior art keywords
phase change
layer
insulating film
electrode
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005264484A
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English (en)
Japanese (ja)
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JP2007080978A (ja
JP2007080978A5 (enExample
Inventor
努 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2005264484A priority Critical patent/JP4817410B2/ja
Priority to CN2006101290736A priority patent/CN1933208B/zh
Priority to US11/518,172 priority patent/US7728321B2/en
Publication of JP2007080978A publication Critical patent/JP2007080978A/ja
Publication of JP2007080978A5 publication Critical patent/JP2007080978A5/ja
Application granted granted Critical
Publication of JP4817410B2 publication Critical patent/JP4817410B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2005264484A 2005-09-12 2005-09-12 相変化メモリ素子およびその製造方法 Expired - Lifetime JP4817410B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005264484A JP4817410B2 (ja) 2005-09-12 2005-09-12 相変化メモリ素子およびその製造方法
CN2006101290736A CN1933208B (zh) 2005-09-12 2006-09-08 相变存储器装置及其制造方法
US11/518,172 US7728321B2 (en) 2005-09-12 2006-09-11 Phase change memory device and method of manufacturing the device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005264484A JP4817410B2 (ja) 2005-09-12 2005-09-12 相変化メモリ素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2007080978A JP2007080978A (ja) 2007-03-29
JP2007080978A5 JP2007080978A5 (enExample) 2009-02-19
JP4817410B2 true JP4817410B2 (ja) 2011-11-16

Family

ID=37878913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005264484A Expired - Lifetime JP4817410B2 (ja) 2005-09-12 2005-09-12 相変化メモリ素子およびその製造方法

Country Status (3)

Country Link
US (1) US7728321B2 (enExample)
JP (1) JP4817410B2 (enExample)
CN (1) CN1933208B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671356B2 (en) * 2005-11-03 2010-03-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
TWI305678B (en) * 2006-08-14 2009-01-21 Ind Tech Res Inst Phase-change memory and fabricating method thereof
US7638357B2 (en) * 2006-08-25 2009-12-29 Micron Technology, Inc. Programmable resistance memory devices and systems using the same and methods of forming the same
KR100967675B1 (ko) * 2006-11-16 2010-07-07 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
KR100876767B1 (ko) 2007-09-06 2009-01-07 주식회사 하이닉스반도체 상 변화 메모리 장치의 형성 방법
US8043888B2 (en) 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
US7834342B2 (en) 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
JP2010087007A (ja) * 2008-09-29 2010-04-15 Elpida Memory Inc 相変化メモリ装置及びその製造方法
US8193522B2 (en) 2009-04-09 2012-06-05 Qualcomm Incorporated Diamond type quad-resistor cells of PRAM
US8470635B2 (en) * 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
KR101038997B1 (ko) * 2009-12-22 2011-06-03 주식회사 하이닉스반도체 디스터번스를 줄일 수 있는 상변화 메모리 장치 및 그 제조방법
US8188897B2 (en) 2010-10-29 2012-05-29 Hewlett-Packard Development Company, L.P. Analog to digital converter
US8361833B2 (en) 2010-11-22 2013-01-29 Micron Technology, Inc. Upwardly tapering heaters for phase change memories
KR101934783B1 (ko) 2012-07-02 2019-01-03 삼성전자주식회사 상변화 메모리 장치의 제조 방법
CN102810637A (zh) * 2012-09-13 2012-12-05 中国科学院上海微系统与信息技术研究所 用于替代dram及flash的相变存储单元及其制作方法
CN109786550B (zh) 2019-03-18 2024-04-05 北京时代全芯存储技术股份有限公司 相变化记忆体及其制造方法
CN119110596B (zh) * 2023-06-01 2025-10-03 长鑫存储技术有限公司 半导体结构及其形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US6670628B2 (en) 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
GB2407705A (en) * 2002-08-21 2005-05-04 Ovonyx Inc Utilizing atomic layer deposition for programmable device
KR100504700B1 (ko) 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP2005150243A (ja) 2003-11-12 2005-06-09 Toshiba Corp 相転移メモリ
KR100568109B1 (ko) 2003-11-24 2006-04-05 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR100533958B1 (ko) * 2004-01-05 2005-12-06 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
KR100663348B1 (ko) * 2004-09-02 2007-01-02 삼성전자주식회사 몰딩막 및 형성막 패턴 사이에 개재된 상전이막 패턴을갖는 피이. 램들 및 그 형성방법들.

Also Published As

Publication number Publication date
US7728321B2 (en) 2010-06-01
JP2007080978A (ja) 2007-03-29
CN1933208B (zh) 2012-06-27
CN1933208A (zh) 2007-03-21
US20070069249A1 (en) 2007-03-29

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