CN1933208B - 相变存储器装置及其制造方法 - Google Patents

相变存储器装置及其制造方法 Download PDF

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Publication number
CN1933208B
CN1933208B CN2006101290736A CN200610129073A CN1933208B CN 1933208 B CN1933208 B CN 1933208B CN 2006101290736 A CN2006101290736 A CN 2006101290736A CN 200610129073 A CN200610129073 A CN 200610129073A CN 1933208 B CN1933208 B CN 1933208B
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China
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layer
electrode
phase change
phase
storage device
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CN2006101290736A
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Chinese (zh)
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CN1933208A (zh
Inventor
早川努
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Micron Technology Inc
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Elpida Memory Inc
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Publication of CN1933208A publication Critical patent/CN1933208A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CN2006101290736A 2005-09-12 2006-09-08 相变存储器装置及其制造方法 Active CN1933208B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005264484A JP4817410B2 (ja) 2005-09-12 2005-09-12 相変化メモリ素子およびその製造方法
JP2005-264484 2005-09-12
JP2005264484 2005-09-12

Publications (2)

Publication Number Publication Date
CN1933208A CN1933208A (zh) 2007-03-21
CN1933208B true CN1933208B (zh) 2012-06-27

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Family Applications (1)

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CN2006101290736A Active CN1933208B (zh) 2005-09-12 2006-09-08 相变存储器装置及其制造方法

Country Status (3)

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US (1) US7728321B2 (enExample)
JP (1) JP4817410B2 (enExample)
CN (1) CN1933208B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671356B2 (en) * 2005-11-03 2010-03-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
TWI305678B (en) * 2006-08-14 2009-01-21 Ind Tech Res Inst Phase-change memory and fabricating method thereof
US7638357B2 (en) * 2006-08-25 2009-12-29 Micron Technology, Inc. Programmable resistance memory devices and systems using the same and methods of forming the same
KR100967675B1 (ko) * 2006-11-16 2010-07-07 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
KR100876767B1 (ko) 2007-09-06 2009-01-07 주식회사 하이닉스반도체 상 변화 메모리 장치의 형성 방법
US8043888B2 (en) 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US7888165B2 (en) 2008-08-14 2011-02-15 Micron Technology, Inc. Methods of forming a phase change material
US7834342B2 (en) 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
JP2010087007A (ja) * 2008-09-29 2010-04-15 Elpida Memory Inc 相変化メモリ装置及びその製造方法
US8193522B2 (en) 2009-04-09 2012-06-05 Qualcomm Incorporated Diamond type quad-resistor cells of PRAM
US8470635B2 (en) * 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
KR101038997B1 (ko) * 2009-12-22 2011-06-03 주식회사 하이닉스반도체 디스터번스를 줄일 수 있는 상변화 메모리 장치 및 그 제조방법
US8188897B2 (en) 2010-10-29 2012-05-29 Hewlett-Packard Development Company, L.P. Analog to digital converter
US8361833B2 (en) 2010-11-22 2013-01-29 Micron Technology, Inc. Upwardly tapering heaters for phase change memories
KR101934783B1 (ko) 2012-07-02 2019-01-03 삼성전자주식회사 상변화 메모리 장치의 제조 방법
CN102810637A (zh) * 2012-09-13 2012-12-05 中国科学院上海微系统与信息技术研究所 用于替代dram及flash的相变存储单元及其制作方法
CN109786550B (zh) 2019-03-18 2024-04-05 北京时代全芯存储技术股份有限公司 相变化记忆体及其制造方法
CN119110596B (zh) * 2023-06-01 2025-10-03 长鑫存储技术有限公司 半导体结构及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1650443A (zh) * 2002-08-21 2005-08-03 奥翁尼克斯公司 对于可编程器件使用原子层沉积
US20060043355A1 (en) * 2004-09-02 2006-03-02 Kyung-Chang Ryoo PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US6670628B2 (en) 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
KR100504700B1 (ko) 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP2005150243A (ja) 2003-11-12 2005-06-09 Toshiba Corp 相転移メモリ
KR100568109B1 (ko) 2003-11-24 2006-04-05 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR100533958B1 (ko) * 2004-01-05 2005-12-06 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1650443A (zh) * 2002-08-21 2005-08-03 奥翁尼克斯公司 对于可编程器件使用原子层沉积
US20060043355A1 (en) * 2004-09-02 2006-03-02 Kyung-Chang Ryoo PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

Also Published As

Publication number Publication date
US7728321B2 (en) 2010-06-01
JP2007080978A (ja) 2007-03-29
CN1933208A (zh) 2007-03-21
US20070069249A1 (en) 2007-03-29
JP4817410B2 (ja) 2011-11-16

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SE01 Entry into force of request for substantive examination
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Owner name: MICRON TECHNOLOGY, INC.

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Effective date: 20140512

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Patentee after: Micron Technology, Inc.

Address before: Tokyo, Japan

Patentee before: Elpida Memory Inc.