CN101351887B - 晶体管的制造 - Google Patents

晶体管的制造 Download PDF

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Publication number
CN101351887B
CN101351887B CN2006800390468A CN200680039046A CN101351887B CN 101351887 B CN101351887 B CN 101351887B CN 2006800390468 A CN2006800390468 A CN 2006800390468A CN 200680039046 A CN200680039046 A CN 200680039046A CN 101351887 B CN101351887 B CN 101351887B
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China
Prior art keywords
layer
contact
inculating crystal
epitaxial loayers
crystal layer
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Expired - Fee Related
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CN2006800390468A
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Chinese (zh)
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CN101351887A (zh
Inventor
袁述
康学军
林世鸣
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Tinggi Technologies Pte Ltd
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Tinggi Technologies Pte Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
CN2006800390468A 2005-10-19 2006-09-01 晶体管的制造 Expired - Fee Related CN101351887B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SG200506897-8 2005-10-19
SG2005068978 2005-10-19
SG200506897-8A SG131803A1 (en) 2005-10-19 2005-10-19 Fabrication of transistors
PCT/SG2006/000255 WO2007046773A1 (en) 2005-10-19 2006-09-01 Fabrication of transistors

Publications (2)

Publication Number Publication Date
CN101351887A CN101351887A (zh) 2009-01-21
CN101351887B true CN101351887B (zh) 2010-11-03

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CN2006800390468A Expired - Fee Related CN101351887B (zh) 2005-10-19 2006-09-01 晶体管的制造

Country Status (7)

Country Link
US (1) US8067269B2 (enExample)
EP (1) EP1949442A4 (enExample)
JP (1) JP2009513014A (enExample)
KR (1) KR20080074892A (enExample)
CN (1) CN101351887B (enExample)
SG (1) SG131803A1 (enExample)
WO (1) WO2007046773A1 (enExample)

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US8067269B2 (en) 2011-11-29
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